? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. 1 gaas mmic vsat power amplifier, 0.5 w 14.0 - 14.5 ghz m/a-com products rev. v4 AM42-0041 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. features ? high linear gain: 28 db typ. ? high saturated output power: +28 dbm typ. ? high power added efficiency: 22% typ. ? 50 ? input/output broadband matched ? lead-free ceramic bolt down package ? rohs* compliant and 260c reflow compatible description m/a-com?s AM42-0041 is a four-stage mmic linear power amplifier in a lead-free, ceramic bolt down style hermetic package. the AM42-0041 employs a fully matched chip with internally decoupled gate and drain bias networks. the AM42-0041 is designed to be operated from a constant current drain supply. by varying the gate bias voltage, the saturated output power performance of this device can be tailored for various applications. the AM42-0041 is ideally suited for use as an output stage or driver, in applications for vsat systems. this design is fully m onolithic and requires a minimum of external components. m/a-com?s AM42-0041 is fabricated using a mature 0.5 micron gaas mesfet process. the process features full passivation for increased performance and reliability. this product is 100% rf tested to ensure compliance to performance specifications. ordering information part number package AM42-0041 ceramic bolt down package pin configuration pin no. pin name description 1 v dd drain supply 2 gnd dc and rf ground 3 rf in rf input 4 gnd dc and rf ground 5 v gg gate supply 6 v gg gate supply 7 v det detector 8 rf out rf output 9 gnd dc and rf ground 10 v dd drain supply functional schematic * restrictions on hazardous substanc es, european union directive 2002/95/ec.
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. 2 gaas mmic vsat power amplifier, 0.5 w 14.0 - 14.5 ghz m/a-com products rev. v4 AM42-0041 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. absolute maximum ratings 1,2,3 parameter absolute maximum input power +23 dbm v dd +12 volts v gg -3 volts v dd - v gg 12 volts i ds 1000 ma channel temperature -40c to +85c storage temperature -65c to 150c 1. exceeding any one or combination of these limits may cause permanent damage to this device. 2. m/a-com does not recommend sustained operation near these survivability limits. 3. case temperature (tc) = +85c electrical specifications: t a = 25c, v dd = +8 v, v gg adjusted for i ds = 500 ma, z 0 = 50 parameter test conditions units min. typ. max. linear gain p in < -10 dbm db 27 28 ? input vswr p in < -10 dbm ratio ? 2.5:1 2.7:1 output vswr p in < -10 dbm ratio ? 2.5:1 ? saturated output power p in = +3 dbm, i dd = 500 ma typ. dbm 27 28 29 output power flatness vs. frequency p in = +3 dbm, i dd = 500 ma typ. db ? 1.0 1.5 output power vs. temperature (with respect to t a = +25c) p in = +3 dbm, i dd = 500 ma typ. t a = -40c to +70c db ? 0.4 ? drain bias current p in = +3 dbm ma 400 500 600 gate bias voltage p in = +3 dbm, i ds = 500 ma typ. v -2.4 -1.0 -0.4 gate bias current p in = +3 dbm, i ds = 500 ma typ. ma ? 5 15 thermal resistance 25c heat sink c/w ? 9.5 ? noise figure p in < -10 dbm, i dd = 500 ma typ. db ? 7 ? power added efficiency p in = +3 dbm, i ds = 500 ma typ. % ? 22 ? v det p in = +3 i ds 500 ma v 1 ? ? application schematic 4,5,6,7,8 4. nominal bias is obtained by fi rst connecting -2.4 volts to pin 5 or pin 6 (vgg), followed by connecting +8 volts to pin 1 or pin 10 (vdd). note sequence. adjust vgg for a drain current of 500 ma typical. 5. rf ground and thermal interface is the flange (case bottom). adequate heat sinking is required. 6. no dc bias voltage appears at the rf ports. 7. no dc resistance at the input and output ports is a short circuit. no voltage is allowed on these ports. 8. for optimum ip3 performance, the vdd bypass capacitors should be placed within 0.5 inches of the v dd leads.
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. 3 gaas mmic vsat power amplifier, 0.5 w 14.0 - 14.5 ghz m/a-com products rev. v4 AM42-0041 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. input and output return loss vs. frequency output power vs. input power @ 14.25 ghz pae vs. input power @ 14.25 ghz typical performance curves @ +25c output power vs. frequency @ p in = +3 dbm pae vs. frequency @ p in = +3 dbm linear gain vs. frequency 15 17 19 21 23 25 27 29 31 33 35 12.0 12.4 12.8 13.2 13.6 14.0 14.4 14.8 15.2 15.6 16.0 frequency (ghz) 0 5 10 15 20 25 12.0 12.4 12.8 13.2 13.6 14.0 14.4 14.8 15.2 15.6 16.0 frequency (ghz) -30 -20 -10 0 10 20 30 40 10 11 12 13 14 15 16 17 18 frequency (ghz) 15 20 25 30 35 -10-8-6-4-20246810 p in (dbm) 0 5 10 15 20 25 -10-8-6-4-2 0 2 4 6 810 p in (dbm) -30 -25 -20 -15 -10 -5 0 10 11 12 13 14 15 16 17 18 s11 s22 frequency (ghz)
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. 4 gaas mmic vsat power amplifier, 0.5 w 14.0 - 14.5 ghz m/a-com products rev. v4 AM42-0041 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. handling procedures please observe the following precautions to avoid damage: static sensitivity gallium arsenide integrated circuits are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these devices. lead-free cr-15? ? reference application note m538 for lead-free solder reflow recommendations. meets jedec moisture sensitivity level 1 requirements.
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