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1/21 september 2004 vn772k-e quad smart power solid state relay for complete h bridge configurations rev. 1 table 1. general features note: (*) total resistance of one side in bridge configuration note: (**) typical current limitation value n suited as low voltage bridge n linear current limitation n very low stand-by power dissipation n short circuit protected n double status flag diagnostic (open drain) n integrated clamping circuits n undervoltage protection n esd protection n in compliance with the 2002/95/ec european directive description the vn772k-e is a device formed by three monolithic chips housed in a standard so-28 package: a double high side and two low side switches. both the double high side and low side switches are made using | stmicroelectronics vipower ? m0-3 technology. this device is suitable to drive a dc motor in a bridge configuration as well as to be used as a quad switch for any low voltage application. figure 1. package the high side switches have built-in thermal shutdown to protect the chips from overtemperature and current limiter blocks to protect the device from short circuit. status output is provided to indicate open load in off and on state and overtemperature. the low side switches are two omnifet ii types (fully autoprotected power mosfet in vipower? technology). they have built-in thermal shutdown, linear current limitation and overvoltage clamping. fault feedback for thermal intervention can be detected by monitoring the voltage at the input pin. table 2. order codes type r ds(on) i out v cc vn772k-e 120m w (*) 9a (**) 36v so-28 package tube tape and reel so-28 vn772k-e VN772KTR-E
vn772k-e 2/21 figure 2. block diagram overtemp. 1 v cc gnd input1 source1 overvoltage logic driver 1 diag v cc clamp undervoltage clamp 1 openload on 1 current limiter 1 openload off 1 source2 driver 2 clamp 2 openload on 2 openload off 2 overtemp. 2 input2 current limiter 2 overvoltage gate linear drain3 source3 clamp current limiter control over temperature input3 overvoltage gate linear drain4 source4 clamp current limiter control over temperature input4
3/21 vn772k-e table 3. pin function figure 3. configuration diagram (top view) table 4. thermal data no name function 1, 3, 25, 28 drain 3 drain of switch 3 (low-side switch) 2 input 3 input of switch 3 (low-side switch) 4, 11 n.c. not connected 5, 10, 19, 24 v cc drain of switches 1 and 2 (high-side switches) and power supply voltage 6 gnd ground of switches 1 and 2 (high-side switches) 7 input 1 input of switch 1 (high-side switches) 8 diagnostic diagnostic of switches 1 and 2 (high-side switches) 9 input 2 input of switch 2 (high-side switch) 12, 14, 15, 18 drain 4 drain of switch 4 (low-side switch) 13 input 4 input of switch 4 (low-side switch) 16, 17 source 4 source of switch 4 (low-side switch) 20, 21 source 2 source of switch 2 (high-side switch) 22, 23 source 1 source of switch 1 (high-side switch) 26, 27 source 3 source of switch 3 (low-side switch) symbol parameter value unit r thj-case thermal resistance junction-case (high-side switch) max 20 c/w r thj-case thermal resistance junction-case (low-side switch) max 20 c/w r thj-amb thermal resistance junction-ambient max 60 c/w
vn772k-e 4/21 absolute maximum ratings table 5. dual high side switch table 6. low side switch symbol parameter value unit v cc dc supply voltage 41 v - v cc reverse dc supply voltage - 0.3 v - i gnd dc reverse ground pin current - 200 ma i out dc output current internally limited a - i out reverse dc output current - 6 a i in dc input current +/- 10 ma i stat dc status current +/- 10 ma v esd electrostatic discharge (human body model: r=1.5k w; c=100pf) - input - status - output - v cc 4000 4000 5000 5000 v v v v p tot power dissipation t c =25c 6 w t j junction operating temperature internally limited c t c case operating temperature - 40 to 150 c t stg storage temperature - 55 to 150 c symbol parameter value unit v ds drain-source voltage (v in =0v) internally clamped v v in input voltage internally clamped v i in input current +/-20 ma r in min minimum input series impedance 150 w i d drain current internally limited a i r reverse dc output current -10.5 a v esd1 electrostatic discharge (r=1.5k w , c=100pf) 4000 v v esd2 electrostatic discharge on output pin only (r=330 w , c=150pf) 16500 v p tot power dissipation (t c =25c) 6 w t j operating junction temperature internally limited c
5/21 vn772k-e electrical characteristics for dual high side switch (8v8v 60 120 m w m w i s ( 1 ) supply current off state; v cc =13v; v in= v out =0v off state; v cc =13v; t j =25c; v in= v out =0v on state; v cc =13v 12 12 5 40 25 7 m a m a ma i l(off1) off state output current v in =v out =0v; v cc =36v; t j =125c 0 50 m a i l(off2) off state output current v in =0v; v out =3.5v -75 0 m a i l(off3) off state output current v in =v out =0v; v cc =13v; t j =125c 5 m a i l(off4) off state output current v in =v out =0v; v cc =13v; t j =25c 3 m a symbol parameter test conditions min typ max unit t d(on) turn-on delay time r l =6.5 w from v in rising edge to v out =1.3v 30 m s t d(off) turn-off delay time r l =6.5 w from v in falling edge to v out =11.7v 30 m s dv out / dt (on) turn-on voltage slope r l =6.5 w from v out =1.3v to v out =10.4v see relative diagram v/ m s dv out / dt (off) turn-off voltage slope r l =6.5 w from v out =11.7v to v out =1.3v see relative diagram v/ m s symbol parameter test conditions min typ max unit v il input low level 1.25 v i il low level input current v in = 1.25v 1 m a v ih input high level 3.25 v i ih high level input current v in = 3.25v 10 m a v i(hyst) input hysteresis voltage 0.5 v v icl input clamp voltage i in = 1ma i in = -1ma 6 6.8 -0.7 8v v symbol parameter test conditions min typ max unit v stat status low output voltage i stat = 1.6 ma 0.5 v i lstat status leakage current normal operation; v stat = 5v 10 m a c stat status pin input capacitance normal operation; v stat = 5v 100 pf v scl status clamp voltage i stat = 1ma i stat = - 1ma 66.8 -0.7 8v v
vn772k-e 6/21 electrical characteristics for dual high side switch (continued) table 11. protections table 12. openload detection electrical characteristics for low side switches (-40c < t j < 150c, unless otherwise specified) table 13. off table 14. on symbol parameter test conditions min typ max unit t tsd shut-down temperature 150 175 200 c t r reset temperature 135 c t hyst thermal hysteresis 7 15 c t sdl status delay in overload conditions t j >t tsd 20 m s i lim current limitation t j =125 c 5.5v 7/21 vn772k-e electrical characteristics for low side switches (continued) (t j =25c, unless otherwise specified) table 15. dynamic table 16. switching table 17. source drain diode note: (*) pulsed: pulse duration = 300 m s, duty cycle 1.5% table 18. protections (-40c < t j < 150c, unless otherwise specified) symbol parameter test conditions min typ max unit g fs (*) forward transconductance v dd =13v; i d =3.5a 9 s c oss output capacitance v ds =13v; f=1mhz; v in =0v 220 pf symbol parameter test conditions min typ max unit t d(on) turn-on delay time v dd =15v; i d =3.5a v gen =5v; r gen =r in min =150 w 100 300 ns t r rise time 470 1500 ns t d(off) turn-off delay time 500 1500 ns t f fall time 350 1000 ns t d(on) turn-on delay time v dd =15v; i d =3.5a v gen =5v; r gen =2.2k w 0.75 2.3 m s t r rise time 4.6 14.0 m s t d(off) turn-off delay time 5.4 16.0 m s t f fall time 3.6 11.0 m s (di/dt) on turn-on current slope v dd =15v; i d =3.5a v gen =5v; r gen =r in min =150 w 6.5 a/ m s q i total input charge v dd =12v; i d =3.5a; v in =5v i gen =2.13ma 18 nc symbol parameter test conditions min typ max unit v sd (*) forward on voltage i sd =3.5a; v in =0v 0.8 v t rr reverse recovery time i sd =3.5a; di/dt=20a/ m s v dd =30v; l=200 m h 220 ns q rr reverse recovery charge 0.28 m c i rrm reverse recovery current 2.5 a symbol parameter test conditions min typ max unit i lim drain current limit v in =5v; v ds =13v v in =5v; v ds =13v; t j =125c 6 6.5 912 12 a a t dlim step response current limit v in =5v; v ds =13v 4.0 m s t jsh overtemperature shutdown 150 175 c t jrs overtemperature reset 135 c i gf fault sink current v in = 5v; v ds =13v; t j =t jsh 15 ma e as single pulse avalanche energy starting t j =25c; v dd =24v v in =5v; r gen =r in min =150 w; l=24mh 200 mj
vn772k-e 8/21 dual high-side switch figure 4. switching time waveforms table 19. truth table figure 5. conditions input output status normal operation l h l h h h current limitation l h h l x x h (t j < t tsd ) h (t j > t tsd ) l overtemperature l h l l h l undervoltage l h l l x x overvoltage l h l l h h output voltage > v ol l h h h l h output current < i ol l h l h h l t t v outn v inn 80% 10% dv out /dt (on) t d(off) 90% dv out /dt (off) t d(on) v inn v stat n t dol(off) open load status timing (with external pull-up) v inn v stat n over temp status timing t sdl t sdl i out < i ol v out > v ol t dol(on) t j > t tsd
9/21 vn772k-e figure 6. typical application diagram
vn772k-e 10/21 figure 7. waveforms open load without external pull-up status n input n normal operation undervoltage v cc v usd v usdhyst input n overvoltage v cc status n input n status n status n input n status n input n open load with external pull-up undefined overtemperature input n status n t tsd t r t j output voltage n v cc v ol v ol v cc >v ov
11/21 vn772k-e electrical characterization for dual high side switch figure 8. off state output current figure 9. high level input current figure 10. input low level figure 11. input clamp voltage figure 12. input high level figure 13. input hysteresis voltage -50 -25 0 25 50 75 100 125 150 175 tc (c) 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 il(off1) (ua) off state vcc=36v vin=vout=0v -50 -25 0 25 50 75 100 125 150 175 tc (c) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 iih (ua) vin=3.25v -50 -25 0 25 50 75 100 125 150 175 tc (c) 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 vil (v) -50 -25 0 25 50 75 100 125 150 175 tc (c) 6 6.2 6.4 6.6 6.8 7 7.2 7.4 7.6 7.8 8 vicl (v) iin=1ma -50 -25 0 25 50 75 100 125 150 175 tc (c) 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 vih (v) -50 -25 0 25 50 75 100 125 150 175 tc (c) 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 vhyst (v)
vn772k-e 12/21 electrical characterization for dual high side switch (continued) figure 14. overvoltage shutdown figure 15. turn-on voltage slope figure 16. on state resistance vs t case figure 17. i lim vs t case figure 18. turn-off voltage slope figure 19. on state resistance vs v cc -50 -25 0 25 50 75 100 125 150 175 tc (c) 30 32 34 36 38 40 42 44 46 48 50 vov (v) -50 -25 0 25 50 75 100 125 150 175 tc (oc) 0 100 200 300 400 500 600 700 800 dvout/dt(on) (v/ms) vcc=13v rl=6.5ohm -50 -25 0 25 50 75 100 125 150 175 tc (c) 0 20 40 60 80 100 120 140 160 ron (mohm) iout=2a vcc=8v; 13v & 36v -50 -25 0 25 50 75 100 125 150 175 tc (c) 0 2 4 6 8 10 12 14 16 18 20 ilim (a) vcc=13v -50 -25 0 25 50 75 100 125 150 175 tc (oc) 200 250 300 350 400 450 500 550 600 dvout/dt(off) (v/ms) vcc=13v rl=6.5ohm 5 10152025303540 vcc (v) 0 10 20 30 40 50 60 70 80 90 100 110 120 ron (mohm) iout=5a tc= - 40c tc=25c tc=150c
13/21 vn772k-e electrical characterization for dual high side switch (continued) figure 20. status leakage current figure 21. openload on state detection threshold figure 22. status clamp voltage figure 23. status low output voltage figure 24. openload off state voltage detection threshold -50 -25 0 25 50 75 100 125 150 175 tc (c) 0 0.01 0.02 0.03 0.04 0.05 ilstat (ua) vstat=5v -50 -25 0 25 50 75 100 125 150 175 tc (oc) 50 60 70 80 90 100 110 120 130 140 150 iol (ma) vcc=13v vin=5v -50 -25 0 25 50 75 100 125 150 175 tc (c) 6 6.2 6.4 6.6 6.8 7 7.2 7.4 7.6 7.8 8 vscl (v) istat=1ma -50 -25 0 25 50 75 100 125 150 175 tc (c) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 vstat (v) istat=1.6ma -50 -25 0 25 50 75 100 125 150 175 tc (c) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 vol (v) vin=0v
vn772k-e 14/21 electrical characterization for low side switch es figure 25. static drain source on resistance figure 26. transconductance figure 27. turn on current slope figure 28. derating curve figure 29. transfer characteristics figure 30. turn on current slope 0 0.25 0.5 0.75 1 1.25 id(a) 0 50 100 150 200 250 300 350 400 450 500 rds(on) (mohm) tj=25oc tj=150oc tj= - 40oc vin=2.5v 012345678 id(a) 0 2 4 6 8 10 12 14 16 18 20 gfs (s) vds=13v tj=25oc tj=150oc tj=-40oc 100 200 300 400 500 600 700 800 900 1000 1100 rg(ohm) 0 1 2 3 4 5 6 7 8 di/dt(a/us) vin=5v vdd=15v id=3.5a 11.522.533.544.555.5 vin(v) 0 1 2 3 4 5 6 7 8 9 10 idon(a) vds=13.5v tj=150oc tj=25oc tj=-40oc 100 200 300 400 500 600 700 800 900 1000 1100 rg(ohm) 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 di/dt(a/us) vin=3.5v vdd=15v id=3.5a
15/21 vn772k-e electrical characterization for low side switch es (continued) figure 31. input voltage vs. input charge figure 32. switching time resistive load figure 33. output characteristics figure 34. capacitance variations figure 35. switching time resistive load figure 36. step response current limit 0 5 10 15 20 25 qg(nc) 0 1 2 3 4 5 6 7 8 vin(v) vds=12v id=3.5a 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 rg(ohm) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 t(us) td(on) tf td(off) tr vdd=15v id=3.5a vin=5v 0 1 2 3 4 5 6 7 8 9 10 11 12 13 vds(v) 0 1 2 3 4 5 6 7 8 9 10 11 12 id(a) vin=2.5v vin=4v vin=4.5v vin=3v vin=2v vin=5v 0 5 10 15 20 25 30 35 vds(v) 100 200 300 400 500 600 c(pf) f=1mhz vin=0v 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25 vin(v) 0 200 400 600 800 1000 1200 1400 1600 t(ns) tf tr td(on) td(off) vdd=15v id=3.5a rg=150ohm 5 101520253035 vdd(v) 3.5 4 4.5 5 5.5 6 6.5 7 tdlim(us) vin=5v rg=150ohm
vn772k-e 16/21 electrical characterization for low side switch es (continued) figure 37. source-drain diode forward characteristics figure 38. static drain-source on resistance vs. input voltage figure 39. normalized input threshold voltage vs. temperature figure 40. static drain-source on resistance vs. id figure 41. static drain-source on resistance vs. input voltage figure 42. normalized on resistance vs. temperature 02468101214 id(a) 500 550 600 650 700 750 800 850 900 950 1000 vsd (mv) vin=0v 3 3.5 4 4.5 5 5.5 6 6.5 vin(v) 0 20 40 60 80 100 120 140 rds(on) (mohm) id=6a id=1a id=6a id=1a id=6a id=1a tj=25oc tj=150oc tj=-40oc -50 -25 0 25 50 75 100 125 150 175 t(oc) 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 vin(th) vds=vin id=1ma 00.511.522.533.544.555.56 id(a) 0 20 40 60 80 100 120 140 rds(on) (mohm) tj=25oc tj=150oc tj=-40oc vin=5v vin=3.5v vin=5v vin=5v vin=3.5v vin=3.5v 3 3.5 4 4.5 5 5.5 6 6.5 7 vin(v) 0 10 20 30 40 50 60 70 80 90 100 110 120 rds(on) (mohm) id=3.5a tj=150oc tj= - 40oc tj=25oc -50 -25 0 25 50 75 100 125 150 175 t(oc) 0.5 0.75 1 1.25 1.5 1.75 2 2.25 rds(on) vin=5v id=3.5a
17/21 vn772k-e electrical characterization for low side switch es (continued) figure 43. turn off drain source voltage slope figure 44. current limit vs. junction temperature figure 45. turn off drain source voltage slope 100 200 300 400 500 600 700 800 900 1000 1100 rg(ohm) 0 50 100 150 200 250 300 dv/dt(v/us) vin=3.5v vdd=15v id=3.5a -50 -25 0 25 50 75 100 125 150 175 tj (oc) 5 6 7 8 9 10 11 12 13 14 15 ilim (a) vds=13v vin=5v 100 200 300 400 500 600 700 800 900 1000 1100 rg(ohm) 0 50 100 150 200 250 300 dv/dt(v/us) vin=5v vdd=15v id=3.5a
vn772k-e 18/21 table 20. so-28 mechanical data figure 46. so-28 package dimensions symbol millimeters min typ max a 2.65 a1 0.10 0.30 b 0.35 0.49 b1 0.23 0.32 c 0.50 c1 45 (typ.) d 17.7 18.1 e 10.00 10.65 e 1.27 e3 16.51 f 7.40 7.60 l 0.40 1.27 s 8 (max.)
19/21 vn772k-e figure 47. so-28 tube shipment (no suffix) figure 48. tape and reel shipment (suffix tr) all dimensions are in mm. base q.ty 28 bulk q.ty 700 tube length ( 0.5) 532 a 3.5 b 13.8 c ( 0.1) 0.6 a c b base q.ty 1000 bulk q.ty 1000 a (max) 330 b (min) 1.5 c ( 0.2) 13 f 20.2 g (+ 2 / -0) 16.4 n (min) 60 t (max) 22.4 tape dimensions according to electronic industries association (eia) standard 481 rev. a, feb. 1986 all dimensions are in mm. tape width w 16 tape hole spacing p0 ( 0.1) 4 component spacing p 12 hole diameter d ( 0.1/-0) 1.5 hole diameter d1 (min) 1.5 hole position f ( 0.05) 7.5 compartment depth k (max) 6.5 hole spacing p1 ( 0.1) 2 top cover tape end start no components no components components 500mm min 500mm min empty components pockets saled with cover tape. user direction of feed reel dimensions
vn772k-e 20/21 revision history date revision description of changes sep. 2004 1 - first issue.
21/21 vn772k-e information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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