TPCP8001-H 2006-05-29 1 toshiba field effect transistor silicon n channel mos type (ultra high speed u-mosiii) TPCP8001-H high efficiency dc dc converter applications notebook pc applications portable equipment applications ? small footprint due to a small and thin package ? high speed switching ? small gate charge: q sw = 3.6 nc (typ.) ? low drain-source on-resistance: r ds (on) = 13 m ? (typ.) ? high forward transfer admittance: |y fs | = 16 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 30v) ? enhancement mode: v th = 1.1 to 2.3 v (v ds = 10 v, i d = 1 ma) maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v dss 30 v drain-gate voltage (r gs = 20 k ? ) v dgr 30 v gate-source voltage v gss 20 v dc (note 1) i d 7.2 drain current pulsed (note 1) i dp 28.8 a drain power dissipation (t = 5 s) (note 2a) p d 1.68 w drain power dissipation (t = 5 s) (note 2b) p d 0.84 w single-pulse avalanche energy (note 3) e as 33.6 mj avalanche current i ar 7.2 a repetitive avalanche energy (note 2a) (note 4) e ar 0.066 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: for notes 1 to 5, refer to the next page. this transistor is an electrostatic-sensitive device. handle with care. unit: mm jedec D jeita D toshiba 2-3v1k weight: 0.017 g (typ.) circuit configuration marking (note 5) 1 2 3 4 8 7 6 5 8 7 6 5 1 2 3 4 8001h lot no. 0.330.05 0.28 +0.1 -0.11 1.12 +0.13 -0.12 2.40.1 0.475 0.65 2.80.1 a 0.05 m 2.90.1 4 1 5 8 0.80.05 0.170.02 b b 0.05 m a s 0.025 s 1.12 +0.13 -0.12 0.28 +0.1 -0.11 1 source 5 drain 2 source 6 drain 3 source 7 drain 4 gate 8 drain
TPCP8001-H 2006-05-29 2 thermal characteristics characteristic symbol max unit thermal resistance, channel to ambient (t = 5 s) (note 2a) r th (ch-a) 74.4 c/w thermal resistance, channel to ambient (t = 5 s) (note 2b) r th (ch-a) 148.8 c/w note 1: the channel temperature should not exceed 150c during use. note 2: (a) device mounted on a glass-epoxy board (a) (b) device mounted on a glass-epoxy board (b) note 3: v dd = 24 v, t ch = 25c (initial), l = 0.5 mh, r g = 25 ?, i ar = 7.2a note 4: repetitive rating: pulse width limited by max channel temperature note 5: on the lower left of the marking indicates pin 1. (a) fr-4 25.4 25.4 0.8 (unit: mm) (b) fr-4 25.4 25.4 0.8 (unit: mm) * weekly code: (three digits) week of manufacture (01 for first week of the year, continuing up to 52 or 53) year of manufacture (the last digit of the calendar year)
TPCP8001-H 2006-05-29 3 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 10 a drain cutoff current i dss v ds = 30 v, v gs = 0 v ? ? 10 a v (br) dss i d = 10 ma, v gs = 0 v 30 ? ? drain-source breakdown voltage v (br) dsx i d = 10 ma, v gs = ? 20 v 15 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 1.1 ? 2.3 v v gs = 4.5 v, i d = 3.6 a ? 19 25 drain-source on-resistance r ds (on) v gs = 10 v, i d = 3.6 a ? 13 16 m ? forward transfer admittance |y fs | v ds = 10 v, i d = 3.6 a 8 16 ? s input capacitance c iss ? 640 ? reverse transfer capacitance c rss ? 75 ? output capacitance c oss v ds = 10 v, v gs = 0 v, f = 1 mhz ? 300 ? pf rise time t r ? 4 ? turn-on time t on ? 8 ? fall time t f ? 4 ? switching time turn-off time t off duty < = = 10 s ? 18 ? ns v dd ? = 10 v, i d = 7.2 a ? 11 ? total gate charge (gate-source plus gate-drain) q g v dd ? = 5 v, i d = 7.2 a ? 6.3 ? gate-source charge 1 q gs1 ? 2.2 ? gate-drain (?miller?) charge q gd ? 2.6 ? gate switch charge q sw v dd ? = 10 v, i d = 7.2 a ? 3.6 ? nc source-drain ratings and characteristics (ta = 25c) characteristic symbol test condition min typ. max unit drain reverse current pulse (note 1) i drp ? ? ? 28.8 a forward voltage (diode) v dsf i dr = 7.2 a, v gs = 0 v ? ? ? 1.2 v r l =4.16? v dd ? ? i d = 3.6 a v out
TPCP8001-H 2006-05-29 4 1 1 10 10 100 100 v gs = 4.5 v 10 0.1 100 0.1 1 100 10 10 1 25c 100c ta = ? 55c 0 0.6 0.8 1 0 4 6 8 10 0.4 0.2 i d = 7.2 a 3.6 1.8 2 0 0 1 2 3 8 12 16 4 5 20 4 ta = ? 55c 25c 100c 0 2.4 4 12 8 16 0.4 0 2 0.8 1.2 1.6 v gs = 2.8 v 3.3 3.4 3.1 3.5 10 4 3.2 3.0 5 2.9 0 2 6 4 8 0.4 0 2 0.8 1.2 1.6 v gs = 2.8 v 3.4 3.2 3.5 10 2.9 3.0 4 3.1 3.3 2.4 drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain-source voltage v ds (v) i d ? v ds drain current i d (a) common source ta = 25c pulse test gate-source voltage v gs (v) i d ? v gs drain current i d (a) drain-source voltage v ds (v) gate-source voltage v gs (v) v ds ? v gs drain current i d (a) r ds (on) ? i d drain-source on-resistance r ds (on) (m ? ) drain current i d (a) ? y fs ? ? i d forward transfer admittance |y fs | (s) common source ta = 25c pulse test common source v ds = 10 v pulse test common source ta = 25c pulse test common source v ds = 10 v pulse test common source ta = 25c pulse test
TPCP8001-H 2006-05-29 5 total gate charge q g (nc) 40 20 20 30 0 0 16 4 16 12 0 8 12 4 10 8 50 20 v dd = 6 v v ds 24 v 12 v 2 1.2 0 0 50 100 150 1.6 200 0.8 0.4 (1) (2) 0 0.5 1.5 ? 80 ? 40 0 40 80 120 160 1.0 2.5 2.0 10 0.1 100 1000 10000 1 10 100 c iss c oss c rss 0 1 ? 0.2 10 100 ? 0.6 ? 0.8 ? 1.0 ? 0.4 10 3 1 v gs = 0 v 4.5 ? 1.2 160 ? 40 0 40 80 120 ? 80 35 25 20 10 0 40 v gs = 4.5 v 10 v i d = 1.8,3.6,7.2 a 5 30 15 i d = 1.8,3.6,7.2 a ambient temperature ta ( c) r ds (on) ? ta drain-source on-resistance r ds (on) (m ? ) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) gate threshold voltage v th (v) ambient temperature ta (c) v th ? ta ambient temperature ta ( c) p d ? ta drain power dissipation p d (w) gate-source voltage v gs (v) dynamic input/output characteristics drain-source voltage v ds (v) (1)device mounted on a glass-epoxy board (a) (note 2a) (2)device mounted on a glass-epoxy board (b) (note 2b) 5s common source ta = 25c pulse test common source pulse test common source v gs = 0 v f = 1 mhz ta = 25c common source v ds = 10 v i d = 1 ma pulse test common source i d = 7.2 a ta = 25c pulse test
TPCP8001-H 2006-05-29 6 1 0.001 10 100 1000 0.01 0.1 1 10 100 1000 0.1 (1) (2) r th ? t w pulse width t w (s) transient thermal impedance r th (c/w) safe operating area drain-source voltage v ds (v) drain current i d (a) i d max (pulse) * 10 ms * single - pulse * single - pulse ta = 25c curves must be derated linearl y with increase in temperature. (1)device mounted on a glass-epoxy board (a) (note 2a) (2)device mounted on a glass-epoxy board (b) (note 2b) 0.1 100 1 10 100 10 0.1 1 v dss max t =1 ms *
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