HN7G10FE 2007-11-01 1 toshiba multichip discrete device HN7G10FE power management switch applications driver circuit applications interface circuit applications ? q1 (transistor): 2sc5376f equivalent ? q2 (mosfet): ssm3k03fe equivalent q1 (transistor) absolute maximum ratings (ta = 25c) characteristic symbol rating unit collector-base voltage v cbo 15 v collector-emitter voltage v ceo 12 v emitter-base voltage v ebo 5 v collector current i c 400 ma base current i b 50 ma q2 (mosfet) absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gss 10 v drain current i d 50 ma q1, q2 common ratings (ta = 25c) characteristic symbol rating unit power dissipation p c (note 1) 100 mw junction temperature t j 150 c storage temperature range t stg ?55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temper ature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: total rating marking pin assignment (top view) unit: mm 1. emitter 2. base 3. drain 4. source 5. gate 6. collector jedec D jeita D toshiba 2-2j1a weight: 0.003 g (typ.) 78a type name h fe rank 6 54 123 q1 q2
HN7G10FE 2007-11-01 2 q1 (transistor) electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit collector cutoff current i cbo v cb = 15 v, i e = 0 ? ? 0.1 a emitter cutoff current i ebo v eb = 5 v, i c = 0 ? ? 0.1 a dc current gain h fe (note 2) v ce = 2 v, i c = 10 ma 300 ? 1000 v ce (sat) (1) i c = 10 ma, i b = 0.5 ma ? 15 30 collector-emitter saturation voltage v ce (sat) (2) i c = 200 ma, i b = 10 ma ? 110 250 mv base-emitter saturation voltage v be (sat) i c = 200 ma, i b = 10 ma ? 0.87 1.2 v note 2: h fe classification a: 300~600, b: 500~1000 q2 (mosfet) electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 10 v, v ds = 0 ? ? 1 a drain-source breakdown voltage v (br) dss i d = 100 a, v gs = 0 20 ? ? v drain cutoff current i dss v ds = 20 v, v gs = 0 ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 0.1 ma 0.7 ? 1.3 v forward transfer admittance ? y fs ? v ds = 3 v, i d = 10 ma 25 50 ? ms drain-source on-resistance r ds (on) i d = 10 ma, v gs = 2.5 v ? 4 12 input capacitance c iss v ds = 3 v, v gs = 0, f = 1 mhz ? 11.0 ? pf reverse transfer capacitance c rss v ds = 3 v, v gs = 0, f = 1 mhz ? 3.3 ? pf output capacitance c oss v ds = 3 v, v gs = 0, f = 1 mhz ? 9.3 ? pf turn-on time t on v dd = 3 v, i d = 10 ma, v gs = 0~2.5 v ? 0.16 ? switching time turn-off time t off v dd = 3 v, i d = 10 ma, v gs = 0~2.5 v ? 0.19 ? s switching time test circuit t on t off (b) v in v gs (c) v out v ds 2.5 v 0 v dd v ds (on) t r t f 10% 90% (a) switching time test circuit 2.5 v 0 i d in out v dd 10 s v in 50 r l v dd = 3 v d.u. < = 1% v in : t r , t f < 5 ns (z out = 50 ) common source ta = 25c 90% 10%
HN7G10FE 2007-11-01 3 q1 (transistor) i c ? v be collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector current i c (ma) base-emitter voltage v be (v) collector current i c (ma) v be (sat) ? i c base-emitter saturation voltage v be (sat) (v) collector-base voltage v cb (v) c ob ? v cb collector output capacitance c ob (pf) collector current i c (ma) h fe ? i c dc current gain h fe collector current i c (ma) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (mv) 50 0.1 3 500 10 1 0.3 30 common emitter ic/ib = 20 ta = 25c 30 10 0.1 5 3 1 0.5 0.3 100 300 0.0 1 0.8 0.4 1.2 common emitter vce = 2 v ta = 100c 25 ? 25 300 1000 1.6 500 30 100 50 3 10 5 ie = 0 a f = 1 mhz ta = 25c 100 0.1 3 100 10 1 0.3 30 50 30 1 10 5 3 0 5 3 4 1 2 0 0.6 0.2 common emitter ta = 25c 0.8 ib = 0.5 ma 6 0.4 1.0 5 4 3 2 1 10000 0.1 3 1000 10 1 0.3 30 5000 3000 10 1000 500 300 100 50 30 100 300 common emitter vce = 2 v ta = 100c 25 ? 25 1000 0.1 3 1000 10 1 0.3 30 common emitter ic/ib = 20 500 ta = 100c 25 300 1 ? 25 100 50 30 10 5 3 100 300
HN7G10FE 2007-11-01 4 q2 (s-mos)
HN7G10FE 2007-11-01 5 q2 (s-mos)
HN7G10FE 2007-11-01 6 q1, q2 common ambient temperature ta ( c) p * ? ta power dissipation p c (mw) 200 0 175 125 100 50 150 75 25 150 0 50 100 *:total rating
HN7G10FE 2007-11-01 7 restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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