the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor pa2722t1a switching n-channel power mosfet data sheet document no. g18625ej1v0ds00 (1st edition) date published may 2007 ns cp(k) printed in japan 2007 package drawing (unit: mm) 1 2 3 4 7 8 6 5 1.27 5 0.2 5.15 0.2 6 0.2 3.65 0.2 0.7 0.15 0.6 0.15 0.42 ? 0.05 +0.1 0.10 m 0.10 s 0 ? 0 +0.05 0.27 0.05 1.0 max. 4.1 0.2 1, 2, 3 : source 4 : gate 5, 6, 7, 8: drain 5.4 0.2 1 0.2 description the pa2722t1a is n-channel mosfet designed for dc/dc converter applications. features ? low on-state resistance r ds(on)1 = 3.3 m max. (v gs = 10 v, i d = 15 a) r ds(on)2 = 4.6 m max. (v gs = 4.5 v, i d = 15 a) ? built-in gate protection diode ? thin type surface mount package with heat spreader (8-pin hvson) ? rohs compliant absolute maximum ratings (t a = 25 c, all terminals are connected.) drain to source voltage (v gs = 0 v) v dss 30 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) i d(dc) 29 a drain current (pulse) note1 i d(pulse) 170 a total power dissipation note2 p t1 1.5 w total power dissipation (pw = 10 sec) note2 p t2 4.6 w channel temperature t ch 150 c storage temperature t stg ? 55 to + 150 c single avalanche current note3 i as 29 a single avalanche energy note3 e as 84 mj thermal resistance channel to ambient thermal resistance note2 r th(ch-a) 83.3 c/w channel to case (drain) thermal resistance r th(ch-c) 1.5 c/w notes 1. pw 10 s, duty cycle 1% 2. mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm 3. starting t ch = 25 c, v dd = 15 v, r g = 25 , v gs = 20 0 v, l = 100 h remark the diode connected between the gate and source of th e transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. equivalent circuit source body diode gate protection diode gate drain
data sheet g18625ej1v0ds 2 c, all terminals are connected.) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 10 a gate leakage current i gss v gs = 20 v, v ds = 0 v 10 a gate to source cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 1.0 2.5 v forward transfer admittance note | y fs | v ds = 10 v, i d = 15 a 13 s drain to source on-state resistance note r ds(on)1 v gs = 10 v, i d = 15 a 2.4 3.3 m r ds(on)2 v gs = 4.5 v, i d = 15 a 3.4 4.6 m input capacitance c iss v ds = 15 v, 6200 pf output capacitance c oss v gs = 0 v, 800 pf reverse transfer capacitance c rss f = 1 mhz 410 pf turn-on delay time t d(on) v dd = 15 v, i d = 15 a, 31 ns rise time t r v gs = 10 v, 20 ns turn-off delay time t d(off) r g = 10 129 ns fall time t f 40 ns total gate charge q g v dd = 15 v, 46 nc gate to source charge q gs v gs = 5 v, 17 nc gate to drain charge q gd i d = 29 a 18 nc body diode forward voltage note v f(s-d) i f = 29 a, v gs = 0 v 0.8 v reverse recovery time t rr i f = 29 a, v gs = 0 v, 44 ns reverse recovery charge q rr di/dt = 100 a/ s 44 nc gate resistance r g f = 1 mhz 1.4 note pulsed test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 50 d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 = 1 s duty cycle 1% v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
data sheet g18625ej1v0ds 3 c) derating factor of forward bias safe operating area forward bias safe operating area dt - percentage of rated power - % 0 040 20 60 100 140 80 120 160 120 100 80 60 40 20 t a - ambient temperature - c i d - drain current - a 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d(pulse) i d(dc) mounted on a glass epoxy board o f 25.4 mm x 25.4 mm x 0.8 mm single pulse p w = 3 0 0 s 1 i m i s 1 i 0 m i s 1 i 0 0 m i s 1 i 0 s p o w e r d i s s i p a t i o n l i m i t e d r d s ( o n ) l i m i t e d ( v g s = 1 i 0 v ) v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 r th(ch-a) = 83.3 c/w i r th(ch-c) = 1.5 c/w i single pulse r th(ch-a) : mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm pw - pulse width - s drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a 0 30 60 90 0 0.2 0.4 0.6 0.8 1 v gs = 3.0 v 3.2 v 3.4 v 3.6 v pulsed 3.8 v 4.0 v 10 v 4.5 v v ds - drain to source voltage - v i d - drain current - a 0 30 60 90 012345 v ds = 10 v pulsed t a = ? 55 c 25 c 75 c 125 c v gs - gate to source voltage - v 100 1 m 10 m 100 m 1 10 100 1000
data sheet g18625ej1v0ds 4 gate to source cut-off voltage vs. channel temperature forward transfer admittance vs. drain current v gs(off) - gate to source cut-off voltage - v 0 0.5 1 1.5 2 2.5 3 -75 -25 25 75 125 175 v ds = 10 v i d = 1 ma t ch - channel temperature - c | y fs | - forward transfer admittance - s 0.1 1 10 100 0.01 0.1 1 10 100 v ds = 10 v pulsed t a = ? 55 c 25 c 75 c 125 c i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m 0 2 4 6 8 10 0.1 1 10 100 1000 pulsed 10 v v gs = 4.5 v i d - drain current - a r ds(on) - drain to source on-state resistance - m 0 5 10 15 0 5 10 15 20 i d = 15 a pulsed v gs - gate to source voltage - v drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m 0 2 4 6 8 10 -75 -25 25 75 125 175 i d = 15 a pulsed v gs = 4.5 v 10 v t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf 100 1000 10000 1 00000 0.1 1 10 100 v gs = 0 v f = 1 mhz c rss c iss c oss v ds - drain to source voltage - v
data sheet g18625ej1v0ds 5 dynamic input/output characteristics source to drain diode forward voltage v gs - gate to source voltage - v 0 2 4 6 0204060 i d = 29 a v dd = 24 v 15 v 6 v q g - gate charge - nc i f - diode forward current - a 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 1.2 pulsed v gs = 10 v 0 v v f(s-d) - source to drain voltage - v ordering information part number lead plating packing package pa2722t1a-e1-az note pa2722t1a-e2-az note sn-bi pa2722t1a-e1-ay note pa2722t1a-e2-ay note pure sn tape 3000 p/reel 8-pin hvson 0.10 g typ. note pb-free (this product does not co ntain pb in the external electrode.)
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