1/8 november 2002 . STS2DPFS20V p-channel 20v - 0.14 w - 2.5a so-8 2.7v-drive stripfet? ii mosfet plus schottky diode description this product associates the latest low voltage stripfet? in p-channel version to a low drop schottky diode. such configuration is extremely versatile in implementing, a large variety of dc-dc converters for printers, portable equipment, and cellular phones. mosfet absolute maximum ratings schottky absolute maximum ratings main product characteristics mosfet v dss r ds(on) i d 20 v < 0.20 w (@4.5v) < 0.25 w (@2.7v) 2.5 a schottky i f(av) v rrm v f(max) 3 a 30 v 0.51 v symbol parameter value unit v ds dain-source voltage (v gs = 0) 20 v v dgr drain-gate voltage (r gs = 20 kw) 20 v v gs gate- source voltage 12 v i d drain current (continuous) at t c = 25c 2.5 a i d drain current (continuous) at t c = 100c 1.58 a i dm ( ) drain current (pulsed) 10 a p tot total dissipation at t c = 25c 2w symbol parameter value unit v rrm repetitive peak reverse voltage 30 v i f(rms) rms forward curren 20 a i f(av) average forward current t l =125 o c d =0.5 3a i fsm surge non repetitive forward current tp= 10 ms sinusoidal 75 a i rsm non repetitive peak reverse current tp=100 m s1 a dv/dt critical rate of rise of reverse voltage 10000 v/ m s so-8 internal schematic diagram ( ) pulse width limited by safe operating area note: for the p-channel mosfet actual polarity of voltages and current has to be reversed obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
STS2DPFS20V 2/8 termal data (*) when mounted on 1 inch 2 fr-4 board, 2 oz of cu and t [ 10 sec electrical characteristics (t case = 25 c unless otherwise specified) off on (1 ) schottcky static electrical characteristics dynamic rthj-amb rthj-amb t stg t j (*) thermal resistance junction-ambient mosfet (*) thermal resistance junction-ambient schottky storage temperature range maximum lead temperature for soldering purpose max 62.5 100 -55 to 150 150 o c/w o c/w o c o c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 20 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 12 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 0.6 v r ds(on) static drain-source on resistance v gs = 4.5 v i d = 1 a v gs = 2.7 v i d = 1 a 0.14 0.20 0.20 0.25 w w symbol parameter test conditions min. typ. max. unit i r (*) reversed leakage current t j = 25 o c v r = 30 v t j = 125 o c v r = 30 v 30 0.2 100 ma ma v f (*) forward voltage drop t j = 25 o c i f = 3 a t j = 125 o c i f = 3 a 0.40 0.51 0.46 ma ma symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds = 15 v i d =1 a 4s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 15v, f = 1 mhz, v gs = 0 315 87 17 pf pf pf obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
3/8 STS2DPFS20V switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 10 v i d = 1 a r g = 4.7 w v gs = 4.5 v (resistive load, figure 3) 38 30 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 10v i d = 2a v gs =4.5v 3.5 0.34 0.8 4.7 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 10 v i d = 1 a r g = 4.7 w, v gs = 4.5 v (resistive load, figure 3) 45 11 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 2 10 a a v sd (*) forward on voltage i sd = 2 a v gs = 0 1.2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 2 a di/dt = 100a/s v dd = 10 v t j = 150c (see test circuit, figure 5) 15 7.5 1 ns nc a electrical characteristics (continued) safe operating area thermal impedance obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
STS2DPFS20V 4/8 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
5/8 STS2DPFS20V normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage vs temperature. . . obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
STS2DPFS20V 6/8 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
7/8 STS2DPFS20V dim. mm inch min. typ. max. min. typ. max. a1.750.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 c 0.25 0.5 0.010 0.019 c1 45 (typ.) d 4.8 5.0 0.188 0.196 e 5.8 6.2 0.228 0.244 e1.27 0.050 e3 3.81 0.150 f 3.8 4.0 0.14 0.157 l 0.4 1.27 0.015 0.050 m0.60.023 s 8 (max.) 0016023 so-8 mechanical data obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
STS2DPFS20V 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2002 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
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