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sgw50n60hs power semiconductors 1 rev. 2.1 june 06 high speed igbt in npt-technology ? 30% lower e off compared to previous generation ? short circuit withstand time ? 10 s ? designed for operation above 30 khz ? npt-technology for 600v applications offers: - parallel switching capability - moderate e off increase with temperature - very tight parameter distribution ? high ruggedness, temperature stable behaviour ? pb-free lead plating; rohs compliant ? qualified according to jedec 1 for target applications ? complete product spectrum and pspice models : http://www.infineon.com/igbt/ type v ce i c e off25 t j marking package sgw50n60hs 600v 50a 0.88mj 150 c g50n60hs pg-to-247-3-21 maximum ratings parameter symbol value unit collector-emitter voltage v ce 600 v dc collector current t c = 25 c t c = 100 c i c 100 50 pulsed collector current, t p limited by t jmax i cpuls 150 turn off safe operating area v ce 600v, t j 150 c - 150 a avalanche energy single pulse i c = 50a, v cc =50v, r ge =25 ? start t j =25 c e as 280 mj gate-emitter voltage static transient ( t p <1s, d <0.05) v ge 20 30 v short circuit withstand time 2) v ge = 15v, v cc 600v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 416 w operating junction and storage temperature t j , t stg -55...+150 time limited operating junction temperature for t < 150h t j(tl) 175 soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 c 1 j-std-020 and jesd-022 2) allowed number of short circuits: <1000; time between short circuits: >1s. g c e pg-to-247-3-21
sgw50n60hs power semiconductors 2 rev. 2.1 june 06 thermal resistance parameter symbol conditions max. value unit characteristic igbt thermal resistance, junction ? case r thjc 0.3 k/w thermal resistance, junction ? ambient r thja 40 electrical characteristic, at t j = 25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit static characteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =500 a 600 - - collector-emitter saturation voltage v ce(sat) v ge = 15v, i c =50a t j =25 c t j =150 c - - 2.8 3.15 3.15 - gate-emitter threshold voltage v ge(th) i c =1ma, v ce = v ge 3 4 5 v zero gate voltage collector current i ces v ce =600v, v ge =0v t j =25 c t j =150 c - - - - 40 3000 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =50a - 31 - s dynamic characteristic input capacitance c iss - 2572 - output capacitance c oss - 245 - reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz - 158 - pf gate charge q gate v cc =480v, i c =50a v ge =15v - 179 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 13 - nh short circuit collector current 1) i c(sc) v ge =15v, t sc 10 s v cc 600v, t j 150 c - 471 - a 1) allowed number of short circuits: <1000; time between short circuits: >1s.
sgw50n60hs power semiconductors 3 rev. 2.1 june 06 switching characteristic, inductive load, at t j =25 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 47 - rise time t r - 32 - turn-off delay time t d(off) - 310 - fall time t f - 16 - ns turn-on energy e on - 1.08 - turn-off energy e off - 0.88 - total switching energy e ts t j =25 c, v cc =400v, i c =50a, v ge =0/15v, r g =6.8 ? l 1) =55nh, c 1) =40pf energy losses include ?tail? and diode reverse recovery 2) . - 1.96 - mj - switching characteristic, inductive load, at t j =150 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 50 - rise time t r - 28 - turn-off delay time t d(off) - 225 - fall time t f - 14 - ns turn-on energy e on - 1 - turn-off energy e off - 0.90 - total switching energy e ts t j =150 c v cc =400v, i c =50a, v ge =0/15v, r g = 1.8 ? l 1) =60nh, c 1) =40pf energy losses include ?tail? and diode reverse recovery 2) . - 1.9 - mj turn-on delay time t d(on) - 48 - rise time t r - 31 - turn-off delay time t d(off) - 350 - fall time t f - 20 - ns turn-on energy e on - 1.5 - turn-off energy e off - 1.1 - total switching energy e ts t j =150 c v cc =400v, i c =50a, v ge =0/15v, r g = 6.8 ? l 1) =60nh, c 1) =40pf energy losses include ?tail? and diode reverse recovery 2) . - 2.6 - mj 1 leakage inductance l and stray capacity c due to test circuit in figure e. 2 diode used in this test is idp45e60
sgw50n60hs power semiconductors 4 rev. 2.1 june 06 i c , collector current 10hz 100hz 1khz 10khz 100khz 0a 20a 40a 60a 80a 100a 120a 140a t c =80c t c =110c i c , collector current 1v 10v 100v 1000v 1a 10a 100a 2s t p =1s 10s 1ms 10ms 50s dc f , switching frequency v ce , collector - emitter voltage figure 1. collector current as a function of switching frequency ( t j 150 c, d = 0.5, v ce = 400v, v ge = 0/+15v, r g = 6.8 ? ) figure 2. safe operating area ( d = 0, t c = 25 c, t j 150 c; v ge =15v) p tot , power dissipation 25c 50c 75c 100c 125c 50w 150w 250w 350w i c , collector current 25c 75c 125c 0a 10a 20a 30a 40a 50a 60a 70a 80a 90a 100a t c , case temperature t c , case temperature figure 3. power dissipation as a function of case temperature ( t j 150 c) figure 4. collector current as a function of case temperature ( v ge 15v, t j 150 c) i c i c
sgw50n60hs power semiconductors 5 rev. 2.1 june 06 i c , collector current 0v 1v 2v 3v 4v 0a 30a 60a 90a 120a 7v 9v 11v 13v 15v v ge =19v i c , collector current 0v 1v 2v 3v 4v 5v 0a 30a 60a 90a 120a 7v 9v 11v 13v 15v v ge =19v v ce , collector - emitter voltage v ce , collector - emitter voltage figure 5. typical output characteristic ( t j = 25c) figure 6. typical output characteristic ( t j = 150c) i c , collector current 0v 2v 4v 6v 8v 0a 30a 60a 90a 120a 25c t j =150c v ce(sat), collector - emitter saturation voltage -50c 0c 50c 100c 0,0v 0,5v 1,0v 1,5v 2,0v 2,5v 3,0v 3,5v 4,0v i c =100a i c =50a i c =25a v ge , gate-emitter voltage t j , junction temperature figure 7. typical transfer characteristic (v ce =10v) figure 8. typical collector-emitter saturation voltage as a function of junction temperature ( v ge = 15v)
sgw50n60hs power semiconductors 6 rev. 2.1 june 06 t, switching times 0a 20a 40a 60a 80a 10ns 100ns t r t d(on) t f t d(off) t, switching times 0? 3? 6? 9? 12? 15? 10 ns 100 ns t f t r t d(off) t d(on) i c , collector current r g , gate resistor figure 9. typical switching times as a function of collector current (inductive load, t j =150c, v ce =400v, v ge =0/15v, r g =6.8 ? , dynamic test circuit in figure e) figure 10. typical switching times as a function of gate resistor (inductive load, t j =150c, v ce =400v, v ge =0/15v, i c =50a, dynamic test circuit in figure e) t, switching times 25c 50c 75c 100c 125c 10ns 100ns t f t r t d(on) t d(off) v ge(th ) , gate - emitter trshold voltage -50c 0c 50c 100c 150c 1,0v 1,5v 2,0v 2,5v 3,0v 3,5v 4,0v 4,5v 5,0v 5,5v min. typ. max. t j , junction temperature t j , junction temperature figure 11. typical switching times as a function of junction temperature (inductive load, v ce =400v, v ge =0/15v, i c =50a, r g =6.8 ? , dynamic test circuit in figure e) figure 12. gate-emitter threshold voltage as a function of junction temperature ( i c = 1ma)
sgw50n60hs power semiconductors 7 rev. 2.1 june 06 e , switching energy losses 0a 20a 40a 60a 80a 0mj 1mj 2mj 3mj 4mj 5mj e on * e off *) e on and e ts include losses due to diode recovery e ts * e , switching energy losses 0? 3? 6? 9? 12? 15? 0.0 mj 0.5 mj 1.0 mj 1.5 mj 2.0 mj 2.5 mj 3.0 mj 3.5 mj e on * *) eon and ets include losses due to diode recovery e ts * e off i c , collector current r g , gate resistor figure 13. typical switching energy losses as a function of collector current (inductive load, t j =150c, v ce =400v, v ge =0/15v, r g =6.8 ? , dynamic test circuit in figure e) figure 14. typical switching energy losses as a function of gate resistor (inductive load, t j =150c, v ce =400v, v ge =0/15v, i c =50a, dynamic test circuit in figure e) e , switching energy losses 0c 50c 100c 0mj 1mj 2mj *) e on and e ts include losses due to diode recovery e ts * e on * e off z thjc , transient thermal resistance 1s 10s 100s 1ms 10ms 100ms 10 -3 k/w 10 -2 k/w 10 -1 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 t j , junction temperature t p , pulse width figure 15. typical switching energy losses as a function of junction temperature (inductive load, v ce =400v, v ge =0/15v, i c =50a, r g =6.8 ? , dynamic test circuit in figure e) figure 16. igbt transient thermal resistance ( d = t p / t ) c 1 = 1 r 1 r 1 r 2 c 2 = 2 r 2 r ,(k/w) , (s) 0.116 0.0895 0.0729 2.45e-02 0.0543 1.95e-03 0.0386 2.07e-04 0.0173 1.05e-05
sgw50n60hs power semiconductors 8 rev. 2.1 june 06 v ge , gate - emitter voltage 0nc 50nc 100nc 150nc 200nc 250nc 0v 3v 6v 9v 12v 15v 480v 120v c, capacitance 0v 10v 20v 100pf 1nf c rss c oss c iss q ge , gate charge v ce , collector - emitter voltage figure 17. typical gate charge ( i c =50 a) figure 18. typical capacitance as a function of collector-emitter voltage ( v ge =0v, f = 1 mhz) t sc , short circuit withstand time 10v 11v 12v 13v 14v 0s 5s 10s 15s i c(sc) , short circuit collector current 10v 12v 14v 16v 18v 0a 100a 200a 300a 400a 500a 600a 700a v ge , gate - emitter voltage v ge , gate - emitter voltage figure 19. short circuit withstand time as a function of gate-emitter voltage ( v ce =600v , start at t j = 25c ) figure 20. typical short circuit collector current as a function of gate- emitter voltage ( v ce 600v, t j 150 c)
sgw50n60hs power semiconductors 9 rev. 2.1 june 06 pg-to247-3-21
sgw50n60hs power semiconductors 10 rev. 2.1 june 06 figure a. definition of switching times figure b. definition of switching losses p(t) 12 n t(t) j 1 1 2 2 figure d. thermal equivalent circuit figure e. dynamic test circuit leakage inductance l =55nh a n d stray capacity c =40pf.
sgw50n60hs power semiconductors 11 rev. 2.1 june 06 edition 2006-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 6/8/06. all rights reserved. attention please! the information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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