2sb1558 2006-11-21 1 toshiba transistor silicon pnp epitaxial type (darlington power transistor) 2sb1558 power amplifier applications ? high breakdown voltage: v ceo = ? 140 v (min) ? complementary to 2sd2387 absolute maximum ratings (tc = 25c) characteristics symbol rating unit collector-base voltage v cbo ? 140 v collector-emitter voltage v ceo ? 140 v emitter-base voltage v ebo ? 5 v collector current i c ? 8 a base current i b ? 0.1 a collector power dissipation (tc = 25c) p c 80 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon review ing the toshiba semiconductor reliability handbook (?handling precautions?/derating concept and methods) and in dividual reliability data (i.e. reliability test report and estimated failure rate, etc). equivalent circuit unit: mm jedec D jeita D toshiba 2-16c1a weight: 4.7 g (typ.) base emitter 100 ? collector
2sb1558 2006-11-21 2 electrical characteristics (tc = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = ? 140 v, i e = 0 D D ? 5.0 a emitter cut-off current i ebo v eb = ? 5 v, i c = 0 D D ? 5.0 a collector-emitter breakdown voltage v (br) ceo i c = ? 50 ma, i b = 0 ? 140 D D v h fe (1) (note) v ce = ? 5 v, i c = ? 7 a 5000 D 30000 dc current gain h fe (2) v ce = ? 5 v, i c = ? 12 a 2000 D D collector-emitter saturation voltage v ce (sat) i c = ? 7 a, i b = ? 7 ma D D ? 2.5 v base-emitter voltage v be v ce = ? 5 v, i c = ? 7 a D D ? 3.0 v transition frequency f t v ce = ? 5 v, i c = ? 1 a D 30 D mhz collector output capacitance c ob v cb = ? 10 v, i e = 0, f = 1 mhz D 170 D pf note: h fe (1) classification a: 5000 to 12000, b: 9000 to 18000, c: 15000 to 30000 marking b1558 toshiba lot no. characteristics indicator a line indicates lead (pb)-free package or lead (pb)-free finish. part no. (or abbreviation code)
2sb1558 2006-11-21 3 ambient temperature ta (c) p c ? ta collector power dissipation p c (w) 0 0 20 tc = ta infinite heat sink 60 100 25 50 75 100 125 175 150 40 80 120 collector-emitter voltage v ce (v) safe operating area collector current i c (a) h fe ? i c dc current gain h fe collector current i c (a) base-emitter voltage v be (v) i c ? v be collector current i c (a) 0 0 ? 4 ? 8 ? 1 ? 2 ? 3 ? 4 common emitter v ce = ? 5 v ? 5 ? 2 ? 6 ? 10 tc = ? 25c 25 100 100000 300 ? 0.03 common emitter v ce = ? 5 v 500 1000 3000 5000 10000 30000 50000 ? 0.3 ? 1 ? 30 tc = 100c 25 ? 25 ? 0.1 ? 3 ? 100 100 ? 10 ? 10 ? 30 ? 50 ? 100 ? 0.3 ? 5 ? 20 ? 0.5 ? 1 ? 3 ? 5 ? 10 *: single nonrepetitive pulse tc = 2 5 c curves must be derated linearly with increase in temperature. i c max (continuous) i c max (pulsed)* 10 ms* 100 ms* dc operation tc = 25c ? 300 v ceo max collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) 0 0 ? 4 ? 8 ? 2 ? 4 ? 6 ? 8 i b = ? 50 a ? 500 ? 300 ? 200 ? 100 common emitter tc = 2 5 c ? 10 ? 2 ? 6 ? 10 ? 150 ? 250 ? 350 ? 400 ? 450 collector current i c (a) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) ? 0.5 ? 10 ? 0.03 ? 0.05 ? 0.3 ? 0.5 ? 1 ? 5 ? 0.1 ? 3 ? 10 tc = ? 25c 100 25 common emitter i c /i b = 250 ? 1 ? 5 ? 0.1 ? 0.3 ? 3
2sb1558 2006-11-21 4 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality an d reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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