DXTD965 discrete semiconductors r dc components co., ltd. technical specifications of npn epitaxial planar transistor pinning 1 = base 2 = collector 3 = emitter description designed for use in af output amplifier and flash unit. sot-89 dimensions in inches and (millimeters) .063(1.60).055(1.40) .066(1.70).059(1.50) .167(4.25).159(4.05) .016(0.41).014(0.35) .120(3.04) .117(2.96) .181(4.60).173(4.40) .060(1.52).058(1.48) .020(0.51).014(0.36) .102(2.60).095(2.40) 1 2 3 characteristic symbol rating unit collector-base voltage vcbo 40 v collector-emitter voltage vceo 20 v emitter-base voltage vebo 7 v collector current (continuous) ic 5 a collector current (peak pt=10ms) ic 8 a total power dissipation pd 1.2 w junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo 40 - - v ic=100ma collector-emitter breakdown voltage bvceo 20 - - v ic=1ma emitter-base breakdown volatge bvebo 7 - - v ie=10ma collector cutoff current icbo - - 0.1 ma vcb =10v emitter cutoff current iebo - - 0.1 ma veb=7v collector-emitter saturation voltage (1) vce(sat) - 0.35 1 v ic=3a, ib=0.1a dc current gain(1) hfe1 340 - 800 - ic=0.5a, vce=2v hfe2 150 - - - ic=2a, vce=2v transition frequency ft - 150 - mhz ie=50ma, vce =6v output capacitance cob - - 50 pf vcb =20v, f=1mhz electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2% rank r s range 340~600 560~800 classification of hfe1
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