page . 1 stad-jun.11.2007 PJP75N75 features ? r ds(on) , v gs @10v,i ds @30a=11m ? advanced trench process technology high density cell design for ultra low on-resistance specially designed for converters and power motor controls fully characterized avala nche voltage and current in compliance with eu rohs 2002/95/ec directives mechanical data case: to-220ab molded plastic terminals : solderable per mil-std-750,method 2026 marking : p75n75 75v n-channel enhancement mode mosfet maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted ) note: 1. maximum dc current limited by the package pan jit reserves the right to improve product design,functions and reliability without notice gate drain source r e t e m a r a pl o b m y st i m i ls t i n u e g a t l o v e c r u o s - n i a r dv s d 5 7v e g a t l o v e c r u o s - e t a gv s g + 0 2v t n e r r u c n i a r d s u o u n i t n o ci d 5 7a t n e r r u c n i a r d d e s l u p ) 1 i m d 0 5 3a n o i t a p i s s i d r e w o p m u m i x a m t a 5 2 = o c t a 5 7 = o c p d 5 0 1 5 . 2 6 w e g n a r e r u t a r e p m e t e g a r o t s d n a n o i t c n u j g n i t a r e p o t j t , g t s 0 5 1 + o t 5 5 - o c e s l u p e l g n i s h t i w y g r e n e e h c n a l a v a i s a h m 3 . 0 = l , v 5 . 7 3 = d d v , a 7 4 = e s a 0 6 6j m e c n a t s i s e r l a m r e h t e s a c - o t - n o i t c n u jr c j 2 . 1 o w / c ) d e t n u o m b c p ( e c n a t s i s e r l a m r e h t t n e i b m a o t - n o i t c n u j 2 r a j 2 6 o w / c
page . 2 stad-jun.11.2007 PJP75N75 electrical characteristics ( t a =25 o c unless otherwise noted ) v dd v out v in r g r l switching test circuit gate charge test circuit v dd v gs r g r l 1ma r e t e m a r a pl o b m y sn o i t i d n o c t s e t. n i m. p y t. x a ms t i n u c i t a t s g a t l o v n w o d k a e r b e c r u o s - n i a r de v b s s d v s g i , v 0 = d a u 0 5 2 = 5 7--v e g a t l o v d l o h s e r h t e t a gv ) h t ( s g v s d v = s g i , d a u 0 5 2 = 1- 3v e t a t s - n o e c r u o s - n i a r d e c n a t s i s e r r ) n o ( s d v s g i , v 0 1 = d a 0 3 = -0 . 81 1 m ? v s g i , v 0 1 = d 5 2 1 = c t , a 0 3 = o c -- 0 2 n i a r d e g a t l o v e t a g o r e z t n e r r u c i s s d v s d v , v 5 7 = s g v 0 = --1 a u v s d v , v 5 7 = s g 5 2 1 = c t , v 0 = o c -- 0 1 e g a k a e l y d o b e t a gi s s g v s g =+ v , v 0 2 s d v 0 = --+ 0 0 1n e c n a t c u d n o c s n a r t d r a w r o fg s f v s d i > ) n o ( d r x x a m ) n o ( s d i , d a 5 1 = 0 2--s c i m a n y d e g r a h c e t a g l a t o tq g v s d i , v 0 3 = d a 0 3 = v s g v 0 1 = -3 8- c n e g r a h c e c r u o s - e t a gq s g -9 . 8- e g r a h c n i a r d - e t a gq d g -3 . 4 2- e m i t y a l e d n o - n r u tt ) n o ( d v d d r , v 0 3 = l 5 1 = ? i d v , a 2 = n e g v 0 1 = r g 5 . 2 = ? -2 . 8 12 2 s n e m i t e s i r n o - n r u tt r -6 . 5 10 2 e m i t y a l e d f f o - n r u tt ) f f o ( d -5 . 0 70 9 e m i t l l a f f f o - n r u tt f -8 . 3 18 1 e c n a t i c a p a c t u p n ic s s i v s d v , v 5 2 = s g v 0 = h m 0 . 1 = f z -0 5 1 3- f p e c n a t i c a p a c t u p t u oc s s o -0 0 3- r e f s n a r t e s r e v e r e c n a t i c a p a c c s s r -0 4 2- e d o i d n i a r d - e c r u o s t n e r r u c d r a w r o f e d o i d . x a m i s - -- 5 7a e g a t l o v d r a w r o f e d o i dv d s i s v , a 0 3 = s g v 0 = -5 8 . 05 . 1v
page . 3 stad-jun.11.2007 PJP75N75 fig. 1-typical forward characteristic fig.1- output characteristic typical characteristics curves (t =25 c,unless otherwise noted) a o fig.2- transfer characteristic fig.3- on resistance vs drain current fig.6 - capacitance fig.5- on resistance vs junction temperature 0 20 40 60 80 100 012345 v ds - drain-to-source voltage (v) i d - drain-to-source current (a) 3.0v 3.5v 4.0v 4.5v 5.0v 6 6.5 7 7.5 8 8.5 9 9.5 10 0 20 40 60 80 100 i d - drain current (a) 6.0v 10v v =10v gs r - on-resistance (m ) ds(on) fig.4- on resistance vs gate to source voltage 0 10 20 30 40 50 246810 v gs - gate-to-source voltage (v) i d =30a t =125 c j o t =25 c j o r - on-resistance (m ) ds(on) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) r ds(on) - on-resistance (normalized) v =10v i =30a gs d 0 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 v ds - drain-to-source voltage (v) c - capacitance (pf) ciss coss crss v =0v f=1mhz gs v =10v ds v =10v ds v =10v ds 0 20 40 60 80 100 1.5 2 2.5 3 3.5 4 4.5 v gs - gate-to-source voltage (v) i d - drain source current (a) v ds =10v t j =25 o c t 125 c j = o t =-55 c j o
page . 4 stad-jun.11.2007 PJP75N75 fig.11 - maximum drain current vs junction temperature fig.8 - threshold voltage vs junction temperature fig.7 - gate charge fig.9 - breakdown voltage vs junction temperature fig.10 - source-drain diode forward voltage 0 2 4 6 8 10 0 102030405060708090 q g - gate charge (nc) v gs - gate-to-source voltage (v) v =30v i =30a ds d 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v sd - source-to-drain voltage (v) i s - source current (a) t =125 c j o t =25 c j o t =-55 c j o v =0v gs 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) v th - g-s threshold voltage (normalized) i =250ua d 0.9 0.95 1 1.05 1.1 1.15 1.2 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) bv dss - breakdown voltage (normalized) i =250ua d 0 10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 t j - junction temperature ( o c) i d - drain current (a) limited by package fig.12 - safe operation area 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds - drain-to-source voltage (v) i d -draincurrent(a) 10ms 100us 1ms dc rds(on) limited legal statement copyright panjit international, inc 200 9 the information presented in this document is believed to be accurate and reliable. the specifications and information herein are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others.
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