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mil-prf-19500/559e 9 july 2002 superseding mil-prf-19500/559d 10 august 1998 performance specification semiconductor device, unitized, npn, silicon, switching, four transistor array types 2n6989, 2n6989u, and 2n6990, jan, jantx, jantxv, and jans this specification is approved for use by all departments and agencies of the department of defense. 1. scope 1.1 scope . this specification covers the performance requirements for npn, s ilicon, switching transistors in a four independent chip array. four levels of product assu rance are provided for each device type as specified in mil-prf-19500. 1.2 physical dimensions . see figures 1, 2, 3, 4 (14 pin dual-in- line, 14 pin flat package), and figure 5 (20 pin surface mount). 1.3 maximum ratings . (1) type p t t a = +25 c (2) v cbo (3) v ebo (3) v ceo (3) i c (3) t op and t stg *2n6989 2n6989u *2n6990 w 2.0 1.0 1.0 v dc 75 75 75 v dc 6 6 6 v dc 50 50 50 ma dc 800 800 800 c -65 to +200 -65 to +200 -65 to +200 (1) maximum voltage between transistors shall be 500 v dc. * (2) derate linearly 11.43 mw/ c above t a = +25 c for 2n6989 and 2n6989u. derate linearly 5.71 mw/ c above t a = +25 c for 2n6990. ratings apply to total package. (3) ratings apply to each transistor in the array. amsc n/a fsc 5961 distribution statement a . approved for public release; distribution is unlimited. inch-pound the documentation and process conversi on measures necessary to comply with this document shall be completed by 9 october 2002. beneficial comments (recommendations, additions, deleti ons) and any pertinent data which may be of use in improving this document should be addressed to: de fense supply center, columbus, attn: dscc-vac, p.o. box 3990, columbus, oh 43216-5000, by using t he standardization document improvement proposal (dd form 1426) appearing at the end of this document or by letter.
mil-prf-19500/559e 2 1.4 primary electr ical characteristics . characteristics apply to each transistor in the array. limits h fe2 (1) v ce = 10 v dc h fe4 (1) v ce = 10 v dc c obo v cb = 10 v dc switching i c = 1.0 ma dc i c = 150 ma dc i e = 0 100 khz f 1 mhz t on see figure 6 t off see figure 7 min max 75 325 100 300 pf 8 ns 35 ns 300 limits |h fe | v ce = 20 v dc i c = 20 ma dc f = 100 mhz v ce(sat)2 (1) i c = 500 ma dc i b = 50 ma dc v be(sat)2 (1) i c = 500 ma dc i b = 50 ma dc min max 2.5 8.0 v dc 1.0 v dc 2.0 (1) pulsed (see 4.5.1). 2. applicable documents 2.1 general . the documents listed in this section are specified in sections 3 and 4 of this specification. this section does not include documents cited in other secti ons of this specificati on or recommended for additional information or as examples. while every effort has been made to ensure t he completeness of this list, document users are cautioned that they must m eet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 government documents . 2.2.1 specifications, standards, and handbooks . the following specifications, standards, and handbooks form a part of this document to the extent specified herein. un less otherwise specified, the issues of these documents are those listed in the issue of the department of def ense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification department of defense mil-prf-19500 - semiconductor devi ces, general specification for. standard department of defense mil-std-750 - test methods for semiconductor devices. (unless otherwise indicated, copies of the above s pecifications, standards, and handbooks are available from the document automation and production services (daps), building 4d (dpm-dodssp), 700 robbins avenue, philadelphia, pa 19111-5094.) 2.3 order of precedence . in the event of a conflict between the text of this document and the references cited herein (except for related associated specifications or specification sheets), the text of this document takes precedence. nothing in this docum ent, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
mil-prf-19500/559e 3 figure 1. dimensions and configuration for type 2n6989 .
mil-prf-19500/559e 4 dimensions dimensions symbol inches millimeters notes symbol inches millimeters notes min max min max min max min max bh .200 5.08 ls .100 bsc 2.54 bsc 7, 11 lw .014 .023 0.36 0.58 10 ll .125 .200 3.18 5.08 lw 1 .030 .070 0.76 1.78 4, 10 ll 1 .150 3.81 lt .008 .015 0.20 0.38 10 lo .005 0.13 8 bl .785 19.94 6 lo 1 .098 2.49 8 bw .220 .310 5.59 7.87 6 lo 2 .015 .060 0.38 1.52 5 bw 1 .290 .320 7.37 8.13 9 0 15 0 15 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. index area: a notch or pin one identificati on mark shall be located adjacent to pin one and shall be located within the shaded area shown. the manufactu rer's identification shall not be used as a pin one identification mark. 4. the minimum limit for dimension lw 1 may be .023 inch (0.58 mm) for leads number 1, 7, 8, and 14 only. 5. dimension lo 2 shall be measured from the seating plane to the base plane. 6. this dimension allows for off- center lid, meniscus, and glass overrun. 7. the basic pin spacing is .100 inch (2.54 mm) between centerlines. each pin centerline shall be located within .010 inch (0.25 mm) of its exact longitudinal position relative to pins 1 and 14 (see figure 6). 8. applies to all four cor ners (leads number 1, 7, 8, and 14). 9. lead center when is 0 . bw 1 shall be measured at the centerline of the leads. 10. all leads. 11. twelve spaces. 12. no organic or polymeric materials shall be molded to the bottom of the package to cover the leads. figure 1. dimensions and configuration for type 2n6989 - continued.
mil-prf-19500/559e 5 figure 2. physical dimensions for type 2n6990 .
mil-prf-19500/559e 6 dimensions dimensions symbol inches millimeters notes symbol inches millimeters notes min max min max min max min max ch .030 .115 0.76 2.92 bw 3 .030 0.76 lw .010 .019 0.25 0.48 7 ls .050 bsc 1.27 bsc 6, 8 tl .003 .006 0.08 0.15 7 lt .003 .006 0.076 0.152 12 bl .280 7.11 5 ll .250 .370 6.35 9.40 bw .240 .260 6.10 6.60 ld 2 .005 .040 0.13 1.02 4 lu .290 7.37 5 lo .005 0.13 9, 10 bw 2 .125 3.18 lo 3 .004 `0.10 13 30 90 30 90 14 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. index area: a notch or pin one identificati on mark shall be located adjacent to pin one and shall be located within the shaded area shown. the manufactu rer's identification shall not be used as a pin one identification mark. alternatively, a t ab (dim tl) may be used to identify pin one. 4. dimension ld 2 shall be measured at the point of exit of the lead from the body. 5. this dimension allows for off- center lid, meniscus, and glass overrun. 6. the basic pin spacing is .050 inch (1.25 mm) bet ween centerlines. each pin centerline shall be located within .005 inch (0.13 mm) of its exact longitudinal position relative to pins 1 and 14. 7. all leads: increase maximum limit by .003 inch (0.08 mm) measured at the c enter of the flat when the lead finish is solder. 8. twelve spaces. 9. applies to all four cor ners (leads number 2, 6, 9, and 13). 10. dimension lo may be .000 inch (0.00 mm if leads number 2, 6, 9, and 13) bend toward the cavity of the package within one lead width from the point of entry of the lead into the body or if the leads are brazed to the metallized ceramic body. 11. no organic or polymeric materials shall be mo lded to the bottom of the package to cover the leads. 12. optional, see note 1. if a pin one identification mark is used in addition to this tab, the minimum limit of dimension tl does not apply. 13. applies to leads number 1, 7, 8, and 14. 14. lead configuration is optional within dim ension bw except dimensions lw and lt apply. figure 2. physical dimensions for type 2n6990 - continued.
mil-prf-19500/559e 7 symbol dimensions inches millimeters min max min max a .063 .075 1.60 1.90 d .345 .355 8.76 9.02 d 1 .195 .205 4.95 5.21 d 2 .050 typ 1.27 typ d 3 .070 .080 1.76 2.03 e .025 ref 0.64 ref l 1 * .050 ref for pins 2 through 20 * 1.27 ref for pins 2 through 20 l 2 .080 .090 2.03 2.28 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. unless otherwise specified, tolerance is .005 inch (0.13 mm) figure 3. physical dimensions for type 2n6989u .
mil-prf-19500/559e 8 figure 4. schematic and termi nal connections for type 2n6989 and 2n6990 . figure 5. schematic and term inal connections for type 2n6989u .
mil-prf-19500/559e 9 3. requirements 3.1 general . the requirements for acquiring the product descr ibed herein shall consist of this document and mil-prf-19500. 3.2 qualification . devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for lis ting on the applicable qualified manufacturer's list (qml) before contract award (see 4.2 and 6.3). 3.3 abbreviations, symbols, and definitions . abbreviations, symbols, and definitions used herein shall be as specified in mil-prf-19500 and as follows. 3.4 interface and physical dimensions . interface and physical dimensi ons shall be as specified in mil-prf-19500, and on figures 1, 2, 3, 4, and 5 . 3.4.1 lead finish . lead finish shall be solderable in accordanc e with mil-prf-19500, mil-std-750, and herein. where a choice of lead finish is desired, it sha ll be specified in the acquisition document (see 6.2). 3.4.2 schematic and terminal connections . the schematic and terminal connec tions shall be as shown on figure 4 (for flat package and dual-in-line) and on figure 5 (for leadless chip carrier). 3.5 electrical perfo rmance characteristics . unless otherwise specified her ein, the electrical performance characteristics are as specified in 1.3, 1.4, and table i herein. 3.6 electrical test requirements . the electrical test requirements s hall be the subgroups specified in 4.4.2 and 4.4.3 herein. 3.7 marking . marking shall be in accordance with mil-prf-19500. 3.8 workmanship . semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. verification 4.1 classification of inspections . the inspection requirements specif ied herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3). c. conformance inspection (see 4.4). 4.2 qualification inspection . qualification inspection shall be in a ccordance with mil-prf-19500 and as specified herein. * 4.2.1 group e qualification . group e inspection shall be performed for qua lification or re-qualification only. in case qualification was awarded to a prior revision of the associated specification that did not request the performance of table ii, the tests specified in table ii herei n must be performed by the fi rst inspection lot processed to this revision to maintain qualification.
mil-prf-19500/559e 10 4.3 screening (jans, jantx, and jantxv levels only) . screening shall be in accordance with table iv of mil-prf-19500 and as specified herein. the following m easurements shall be made in accordance with table i herein. devices that exceed the limits of table i herein shall not be acceptable. screen (see table iv of measurement mil-prf-19500) jans level jantx and jantxv levels *3c thermal impedance, method 3131 of mil-std-750. thermal impedance, method 3131 of mil-std-750. 9 i cbo2 , h fe4 not applicable. 10 48 hours minimum. 48 hours minimum. 11 i cbo2 ; h fe4 ; ? i cbo2 = 100 percent of initial value or 5 na dc, whichever is greater. ? h fe4 = + 15 percent. i cbo2 ; h fe4 12 see 4.3.1 240 hours minimum. see 4.3.1 80 hours minimum. 13 subgroups 2 and 3 of table i herein; ? i cbo2 = 100 percent of initial value or 5 na dc, whichever is greater; ? h fe4 = + 15 percent. subgroup 2 of table i herein; ? i cbo2 = 100 percent of initial value or 5 na dc, whichever is greater; ? h fe4 = + 15 percent. * 4.3.1 power burn-in conditions . power burn-in conditions are as follows: v cb = 10 v dc. power shall be applied to achieve t j = +135 c minimum using a minimum p d = 75 percent of p t maximum rated as defined in 1.3. 4.3.2 thermal impedance (z jx measurements) . the z jx measurements shall be performed in accordance with mil-std-750, method 3131. a. i m measurement current---------------5 ma. b. i h forward heating curr ent ------------200 ma (min). c. t h heating time --------------------------25 - 30 ms. d. t md measurement delay time -------60 s max. e. v ce collector-emitter vo ltage -------10 v dc minimum the maximum limit for z jx under these test conditions are z jx (max) = 72 c/w. 4.4 conformance inspection . conformance inspection shall be in accordance with mil-prf-19500, and as specified herein. if alternate screening is being performed in accordance with mil-prf-19500, a sample of screened devices shall be submitted to and pass the requirements of group a1 and a2 inspection only (table vib, group b, subgroup 1 is not required to be performed again if group b has already been satisfied per 4.4.2). 4.4.1 group a inspection . group a inspection shall be conducted in accordance with mil-prf-19500, and table i herein.
mil-prf-19500/559e 11 4.4.2 group b inspection. group b inspection shall be conducted in a ccordance with the conditions specified for subgroup testing in table via (jans) of mil-prf-19500 and 4.4.2.1. electrical m easurements (end-points) and delta requirements shall be in accordance with group a, s ubgroup 2 and 4.5.5 herein. see 4.4.2.2 for jan, jantx, and jantxv group b testing. electrical measurements (end-points) and delta require ments for jan, jantx, and jantxv shall be after each step in 4.4.2.2 and shall be in accordance with group a, subgroup 2 and 4.5.5 herein. 4.4.2.1 group b inspection, table via (jans) of mil-prf-19500. subgroup method condition * b4 1037 v cb = 10 - 30 v dc; t j = +150 c, 2,000 cycles. no heat sink or forced-air cooling on devices shall be permitted. * b5 1027 (note: if a failure occurs, resubmission s hall be at the test conditions of the original sample.) v cb = 10 v dc, p d 100 percent of maximum rated p t (see 1.3). option 1: 96 hours minimum sample size in accordance with table via of mil-prf-19500, adjust t a or p d to achieve t j = +275 c minimum. option 2: 216 hours minimum, sample size = 45, c = 0; adjust t a or p d to achieve t j = +225 c minimum. 4.4.2.2 group b inspection, (jan, jantx, and jantxv) . 1 / step method condition 1 1039 steady-state life: test condition b, 340 hours, v cb = 10 -30 v dc, t j = +150 c min. no heat sink or forced-air cooling on the devices shall be permitted. n = 45 devices, c = 0. 2 1039 the steady-state life test of step 1 shall be extended to 1,000 hrs for each die design. samples shall be selected from a wafer lot every twelve months of wafer production. group b, step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 high-temperature life (non-operating), t = 340 hours, t a = +200 c. n = 22, c = 0. * 4.4.3 group c inspection, group c inspection shall be conducted in acco rdance with the conditions specified for subgroup testing in table vii of mil-prf-19500, and in 4.4.3.1 (jans).and 4.4.3.2 (jan, jantx, and jantxv) herein for group c testing. electrical measurements (end-points) and delta requirements shall be in accordance with group a, subgroup 2 and 4.5.5 herein, del ta parameters apply to subgroup c6. 4.4.3.1 group c inspection, table vii (jans) of mil-prf-19500 . subgroup method condition c2 2036 test condition e, 3 ounce weight; thr ee bends of 15 degrees for 2n6990; three bends for 2n6989; not applicable to 2n6989u. c6 1026 1,000 hours at v cb = 10 v dc; t j = +150 c min. no heat sink or forced-air cooling on device shall be permitted. 1 / separate samples may be used for each step. in the event of a group b failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. if the new ?assembly lot? option is exerci sed, the failed assembly lot shall be scrapped.
mil-prf-19500/559e 12 4.4.3.2 group c inspection, table vii (jan, jantx, and jantxv) of mil-prf-19500 . subgroup method condition c2 2036 test condition e, 3 ounce weight; th ree bends of 15 degrees for 2n6990; three bends for 2n6989; not applicable to 2n6989u. c6 not applicable. 4.4.3.3 group c sample selection . samples for subgroups in group c shall be chosen at random from any inspection lot containing the intended package type and lead fi nish procured to the same specification which is submitted to and passes group a tests for conformance ins pection. testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. * 4.4.4 group e inspection . group e inspection shall be conducted in a ccordance with the conditions specified for subgroup testing in appendix e, table ix of mil-prf-19500 and as specified herein. el ectrical measurements (end- points) and delta measurements shall be in accordance wi th the applicable steps of table ii and table i, group a, subgroup 2 herein; except, z jx need not be performed. 4.5 method of inspection. methods of inspection shall be as specif ied in the appropriate tables and as follows. 4.5.1 pulse measurements. conditions for pulse measurement shall be as specified in section 4 of mil-std-750. 4.5.2 input capacitance . this test shall be conducted in accordance with method 3240 of mil-std-750, except the output capacitor shall be omitted. 4.5.3 independent transistor inspections . inspections shall be performed on each transistor in the array. 4.5.4 transistor-to-transistor resistance . the leads of each transistor shall be shorted together for this test. the resistance shall be measured between each transistor in the array. 4.5.5 delta requirements . delta requirements shall be as specified below: step inspection mil-std-750 symbol limit unit method conditions 1 collector-base cutoff current. 3036 bias condition d, v cb = 60 v dc. ? i cb02 1 / 100 percent of initial value or 8 na dc, whichever is greater. 2 forward current transfer ratio. 3076 v ce = 10 v dc; i c = 150 ma dc; pulsed see 4.5.1. ? h fe4 1 / 25 percent change from initial reading. 1 / devices which exceed the group a limits for this test shall not be accepted.
mil-prf-19500/559e 13 table i. group a inspection inspection 1 / mil-std-750 limit unit method conditions symbol min max subgroup 1 2 / visual and mechanical 3 / examination 2071 n = 45 devices, c = 0. solderability 3 / 4 / resistance to solvents 3 / 4 / 5 / 2026 1022 n = 15 leads, c = 0. n = 15 devices, c = 0. temp cycling 3 / 4 / 1051 test condition c, 25 cycles. n = 22 devices, c = 0. heremetic seal 4 / 1071 n = 22 devices, c = 0. fine leak gross leak electrical measurements 4 / group a, subgroup 2. bond strength 3 / 4 / 2037 precondition t a = +250 c at t = 24 hrs or t a = +300 c at t = 2 hrs n = 11 wires, c = 0. decap internal visual design verification 4 / 2075 n = 4, c = 0. subgroup 2 collector to base cutoff current 3036 bias condition d; v cb = 75 v dc i c = 10 a dc. i cbo1 10 a dc emitter to base cutoff current 3061 bias condition d; v eb = 6 v dc i e = 10 a dc. i ebo1 10 a dc breakdown voltage, collector to emitter 3011 bias condition d; i c = 10 ma dc; pulsed (see 4.5.1). v (br)ceo 50 v dc collector to base cutoff current 3036 bias condition d; v cb = 60 v dc. i cbo2 10 na dc emitter to base cutoff current 3061 bias condition d; v eb = 4 v dc. i ebo2 10 na dc forward-current transfer ratio 3076 v ce = 10 v dc; i c = 0.1 ma dc. h fe1 50 forward-current transfer ratio 3076 v ce = 10 v dc; i c = 1.0 ma dc. h fe2 75 325 forward-current transfer ratio 3076 v ce = 10 v dc; i c = 10 ma dc. h fe3 100 see footnotes at end of table.
mil-prf-19500/559e 14 table i. group a inspection - continued. inspection 1 / mil-std-750 limit unit method conditions symbol min max subgroup 2 - continued forward-current transfer ratio 3076 v ce = 10 v dc; i c = 150 ma dc; pulsed (see 4.5.1). h fe4 100 300 forward-current transfer ratio 3076 v ce = 10 v dc; i c = 500 ma dc; pulsed see 4.5.1. h fe5 30 collector-emitter saturation voltage 3071 i c = 150 ma dc; i b = 15 ma dc pulsed (see 4.5.1). v ce(sat)1 0.3 v dc collector-emitter saturation voltage 3071 i c = 500 ma dc; i b = 50 ma dc; pulsed (see 4.5.1). v ce(sat)2 1.0 v dc base-emitter saturation voltage 3066 test condition a; i c = 150 ma dc; i b = 15 ma dc; pulsed (see 4.5.1). v be(sat)1 0.6 1.2 v dc base-emitter saturation voltage 3066 test condition a; i c = 500 ma dc; i b = 50 ma dc; pulsed (see 4.5.1). v be(sat)2 2.0 v dc subgroup 3 high temperature operation t a = +150 c collector to base cutoff current 3036 bias condition d;v cb = 60 v dc. i cbo3 10 a dc low temperature operation t a = -55 c. forward-current transfer ratio 3076 v ce = 10 v dc; i c = 10 ma dc. h fe6 35 subgroup 4 small-signal short-circuit forward current transfer ratio 3206 v ce = 10 v dc; i c = 1 ma dc; f = 1 khz. h fe 50 magnitude of small-signal short- circuit forward current transfer ratio 3306 v ce = 10 v dc; i c = 20 ma dc; f = 100 mhz. | h fe | 2.5 10.0 open circuit output capacitance 3236 v cb = 10 v dc; i e = 0; 100 khz < f < 1 mhz. c obo 8 pf input capacitance (output open- circuited) 3240 v eb = 0.5 v dc; i c = 0; 100 khz < f < 1 mhz (see 4.5.2). c ibo 25 pf turn-on time (see figure 6) t on 35 ns turn-off time (see figure 7) t off 300 ns transistor-to-transistor resistance | v t-t | = 500 v dc; see 4.5.4. r t-t 10 10 ? see footnotes at end of table.
mil-prf-19500/559e 15 table i. group a inspection - continued. inspection 1 / mil-std-750 limit unit method conditions symbol min max subgroups 5 and 6 not applicable 1 / for sampling plan see mil-prf-19500. 2 / for resubmission of failed subgroup a1, double the sample size of the failed test or sequence of tests. a failure in group a, subgroup 1 shall not require retest of the entire subgroup. only the failed test shall be rerun upon submission. 3 / separate samples may be used. 4 / not required for jans devices. 5 / not required for laser marked devices.
mil-prf-19500/559e 16 table ii. group e inspection (all qua lity levels) - for qualification only . inspection mil-std-750 qualification method conditions subgroup 1 temperature cycling (air to air) 1051 test condition c, 500 cycles. 45 devices c = 0 hermetic seal fine leak gross leak 1071 electrical measurements see group a, subgroup 2 and 4.5.5 herein. subgroup 2 *intermittent life 1037 v cb = 10 - 30 v dc, 6,000 cycles. 45 devices c = 0 electrical measurements see group a, subgroup 2 and 4.5.5 herein. *subgroup 3, 4, 5, 6 and 7 not applicable *subgroup 8 reverse stability 1033 condition a for devices 400 v dc. condition b for devices < 400 v dc. 45 devices c = 0
mil-prf-19500/559e 17 notes: 1 the rise time (t r ) and fall time (t f ) of the applied pulse shall be each 2.0 ns; duty cycle 2 percent; generator source impedance shall be 50 ? . 2. output sampling oscilloscope: z in 100 k ? ; c in 12 pf; rise time 5.0 ns. figure 6. saturated turn-on switching time test circuit . notes: 1. the rise time (t r ) and fall time (t f ) of the applied pulse shall be each 2.0 ns; duty cycle 2 percent; generator source impedance shall be 50 ? . 2. output sampling oscilloscope: z in 100 k ? ; c in 12 pf; rise time 5.0 ns. figure 7. saturated turn-off switching time test circuit .
mil-prf-19500/559e 18 5. packaging 5.1 packaging . for acquisition purposes, the packaging requirement s shall be as specified in the contract or order (see 6.2). when actual packaging of materiel is to be performed by dod personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control point's packaging ac tivity within the military department or defense agency, or within the military department's system command. packaging data retrieval is available from the managing military department's or defense a gency's automated packaging files, cd-ro m products, or by contacting the responsible packaging activity. 6. notes (this section contains information of a general or ex planatory nature that may be hel pful, but is not mandatory.) 6.1 intended use . the notes specified in mil-prf-19500 are applicable to this specification. 6.2 acquisition requirements . acquisition documents must specify the following: a. title, number, and date of this specification. b. issue of dodiss to be cited in the solicitation, and if required, the specific issue of individual documents referenced (see 2.2.1). c. packaging requirements (see 5.1). d. lead finish (see 3.4.1). 6.3 qualification . with respect to products r equiring qualification, awards w ill be made only for products which are, at the time of award of contract, qualified for inclus ion in qualified manufacturers' list (qml) whether or not such products have actually been so listed by that date. the attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the federal government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specificati on. information pertaining to qualific ation of products may be obtained from defense supply center, columbus, attn: dscc/ vqe, p.o. box 3990, columbus, oh 43216-5000. 6.4 changes from previous issue . the margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. this was done as a convenience only and the government assumes no liability whatsoever for any inaccuracies in these notat ions. bidders and contractors are cautioned to evaluate the requirements of this document based on t he entire content irrespective of the marginal notations and relationship to the last previous issue. custodians: preparing activity: army - cr dla - cc navy - ec air force - 11 (project 5961-2507) dla - cc review activities: navy - as, mc army - ar, mi, sm air force - 19, 99
standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a r eply within 30 days from receipt of the form. note: this form may not be used to reques t copies of documents, nor to request waiv ers, or clarificati on of requirements on current contracts. comments submitted on th is form do not constitute or imply author ization to waive any portion of the refere nced document(s) or to amend c ontractual requirements. i recommend a change: 1. document number mil-prf-19500/559e 2. document date 9 july 2002 3. document title semiconductor device, unitized, npn, si licon, switching, four transistor array types 2n6989, 2n6989u, and 2n6990, jan, jantx, jantxv, and jans. 4. nature of change (identify paragraph number and include propos ed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first, middle initial) b. organization c. address (include zip code) d. telephone (include area code) commercial dsn fax email 7. date submitted 8. preparing activity a. point of contact alan barone b. telephone commercial dsn fax email 614-692-0510 850-0510 614-692-6939 alan.barone@dscc.dla.mil c. address defense supply center columbus attn: dscc-vac p.o. box 3990 columbus, oh 43216-5000 if you do not receive a reply within 45 days, contact: defense standardization program office (dlsc-lm) 8725 john j. kingman, suite 2533 fort belvoir, va 22060-6221 telephone (703) 767-6888 dsn 427-6888 dd form 1426, feb 1999 (eg) previous editions are obsolete whs/dior, feb 99

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