Part Number Hot Search : 
PV24S ASI10474 20120 NCE1579 KA22241C ON2105 RDX7A VNQ810
Product Description
Full Text Search
 

To Download JANTXV2N718A Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  6 lake street, lawrence, ma 01841 03/98 rev: f 1-800-446-1158 / (978) 794-1666 / fax: (978) 689- 0803 page 1 of 2 maximum ratings ratings symbol value units collector-emitter voltage v ceo 30 vdc collector-base voltage v cbo 75 vdc emitter-base voltage v ebo 7.0 vdc collector current i c 500 madc total power dissipation @ t a = +25 0 c (1) 2n718a 2n1613, l @ t c = +25 0 c (2) 2n718a 2n1613, l p t 0.5 0.8 1.8 3.0 w operating & storage junction temperature range t j , t stg -55 to +175 0 c thermal characteristics characteristics symbol max. unit thermal resistance, junction-to-case 2n718a 2n1613, l r q jc 97 58 0 c/w 1) derate linearly 4.57 mw/ 0 c for 2n1613, l and 2.85 mw/ 0 c for 2n718a for t a > +25 0 c 2) derate linearly 17.2 mw/ 0 c for 2n1613, l and 10.3 mw/ 0 c for 2n718a for t c > +25 0 c electrical characteristics (t c = 25 0 c unless otherwise noted) characteristics symbol min. max. unit off characteristics collector-base breakdown voltage i c = 100 m adc v (br)cbo 75 vdc emitter-base breakdown current i e = 100 m adc v (br)ebo 7.0 vdc collector-emitter breakdown voltage i c = 30 madc v (br)ceo 30 vdc technical data 2n718a jan, jtx, jtxv 2n1613 jan, jtx, jtxv 2n1613l jan, jtx, jtxv processed per mil-prf-19500/181 low-power npn silicon transistor 2n718a to- 18 (to206aa 2n1613 to-39 (to-205ad) 2n1613l to-5 mil-prf qml devices
6 lake street, lawrence, ma 01841 03/98 rev: f 1-800-446-1158 / (978) 794-1666 / fax: (978) 689- 0803 page 2 of 2 2n718a, 2n1613, 2n1613l jan, series electrical characteristics ( con?t) characteristics symbol min. max. unit collector-emitter breakdown voltage i c = 10 madc, r be = 10 w v (br)ceo 50 vdc collector-base cutoff current v cb = 60 vdc i cbo 10 h adc emitter-base cutoff current v eb = 5.0 vdc i ebo 10 h adc on characteristics (1) forward-current transfer ratio i c = 0.1 madc, v ce = 10 vdc i c = 10 madc, v ce = 10 vdc i c = 150 madc, v ce = 10 vdc i c = 500 madc, v ce = 10 vdc h fe 20 35 40 20 120 collector-emitter saturation voltage i c = 150 madc, i b = 15 madc v ce(sat) 1.5 vdc base-emitter saturation voltage i c = 150 madc, i b = 15 madc v be(sat) 1.3 vdc dynamic characteristics magnitude of small-signal forward current transfer ratio i c = 50 madc, v ce = 10 vdc, f = 20 mhz ? h fe ? 3.0 small-signal forward current transfer ratio i c = 1.0 madc, v ce = 5.0 vdc, f = 1.0 khz i c = 5.0 madc, v ce = 10 vdc, f = 1.0 khz h fe 30 35 100 150 output capacitance v cb = 10 vdc, i e = 0, 100 khz f 1.0 mhz c obo 25 pf (1)pulse test : pulse width = 300 m s, duty cycle 2.0%.


▲Up To Search▲   

 
Price & Availability of JANTXV2N718A

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X