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absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 8.0 i d @ v gs = 12v, t c = 100c continuous drain current 5.0 i dm pulsed drain current 32 p d @ t c = 25c max. power dissipation 25 w linear derating factor 0.20 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 130 mj i ar avalanche current 8.0 a e ar repetitive avalanche energy 2.5 mj dv/dt peak diode recovery dv/dt 5.5 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in.(1.6mm) from case for 10s) weight 0.98 (typical) g pre-irradiation international rectifier?s radhard hexfet ? technology provides high performance power mosfets for space applications. this technology has over a decade of proven performance and reliability in satellite applications. these devices have been characterized for both total dose and single event effects (see). the combination of low rdson and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a radiation hardened power mosfet thru-hole (to-39) www.irf.com 1 product summary part number radiation level r ds(on) i d qpl part number irhf7130 100k rads (si) 0.18 ? 8.0a jansr2n7261 IRHF3130 300k rads (si) 0.18 ? 8.0a jansf2n7261 irhf4130 500k rads (si) 0.18 ? 8.0a jansg2n7261 irhf8130 1000k rads (si) 0.18 ? 8.0a jansh2n7261

irhf7130 jansr2n7261 100v, n-channel ref: mil-prf-19500/601 rad hard ? hexfet ? technology features: single event effect (see) hardened low r ds(on) low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic package light weight to-39 pd - 90653f
2 www.irf.com irhf7130, jansr2n7261 pre- irradiation note: corresponding spice and saber models are available on the international rectifier website.

source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 8.0 i sm pulse source current (body diode) ? ? 3.2 v sd diode forward voltage ? ? 1.5 v t j = 25c, i s = 8.0a, v gs = 0v t rr reverse recovery time ? ? 270 ns t j = 25c, i f = 8.0a, di/dt 100a/ s q rr reverse recovery charge ? ? 3.0 c v dd 50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 5.0 r thj-pcb junction-to-ambient ? ? 175 c/w typical socket mount electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 100 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.10 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.18 ? v gs =12v, i d = 5.0a resistance ? ? 0.185 v gs =12v, i d = 8.0a v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 2.5 ? ? s ( )v ds > 15v, i ds = 5.0a i dss zero gate voltage drain current ? ? 25 v ds = 80v ,v gs =0v ? ? 250 v ds = 80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 50 v gs =12v, i d =8.0a q gs gate-to-source charge ? ? 10 nc v ds = 50v q gd gate-to-drain (?miller?) charge ? ? 20 t d (on) turn-on delay time ? ? 25 v dd = 50v, i d =8.0a t r rise time ? ? 32 v gs =12v, r g = 7.5 ? t d (off) turn-off delay time ? ? 40 t f fall time ? ? 40 l s + l d total inductance ? 7.0 ? measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance ? 1100 ? v gs = 0v, v ds = 25v c oss output capacitance ? 310 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 55 ? na ? nh ns a
www.irf.com 3 pre-irradiation irhf7130, jansr2n7261 table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter 100k rads(si) 1 300 - 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 100 ? 100 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 ? -100 v gs = -20 v i dss zero gate voltage drain current ? 25 ? 25 a v ds =80v, v gs =0v r ds(on) static drain-to-source ? 0.18 ? 0.24 ? v gs = 12v, i d =5.0a on-state resistance (to-3) r ds(on) static drain-to-source ? 0.18 ? 0.24 ? v gs = 12v, i d =5.0a on-state resistance (to-39) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part number irhf7130 (jansr2n7261) 2. part numbers IRHF3130 (jansf2n7261), irhf4130 (jansg2n7261), irhf8130 (jansh2n7261) fig a. single event effect, safe operating area v sd diode forward voltage ? 1.5 ? 1.5 v v gs = 0v, i s = 8.0a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2.

table 2. single event effect safe operating area ion let energy range v ds(v) (mev/(mg/cm 2 )) (mev) (m) @ v gs =0v @ v gs =-5v @ v gs =-10v @ v gs =-15v @ v gs =-20v cu 28 285 43 100 100 100 80 60 br 36.8 305 39 100 90 70 50 ? 0 20 40 60 80 100 120 0 -5 -10 -15 -20 -25 vgs vds cu br
4 www.irf.com irhf7130, jansr2n7261 pre- irradiation post-irradiation fig 2. typical response of on-state resistance vs. total dose exposure fig 1. typical response of gate threshhold voltage vs. total dose exposure fig 3. typical response of transconductance vs. total dose exposure fig 4. typical response of drain to source breakdown vs. total dose exposure
www.irf.com 5 pre-irradiation irhf7130, jansr2n7261 post-irradiation fig 6. typical on-state resistance vs. neutron fluence level fig 5. typical zero gate voltage drain current vs. total dose exposure fig 7. typical transient response of rad hard hexfet during 1x10 12 rad (si)/sec exposure fig 8b. v dss stress equals 80% of b vdss during radiation fig 8a. gate stress of v gss equals 12 volts during radiation
6 www.irf.com irhf7130, jansr2n7261 pre- irradiation post-irradiation radiation characteristics fig 10. typical output characteristics post-irradiation 100k rads (si) fig 9. typical output characteristics pre-irradiation fig 11. typical output characteristics post-irradiation 300k rads (si) fig 12. typical output characteristics post-irradiation 1 mega rads (si) note: bias conditions during radiation: v gs = 12 vdc, v ds = 0 vdc
www.irf.com 7 pre-irradiation irhf7130, jansr2n7261 radiation characteristics fig 15. typical output characteristics post-irradiation 300k rads (si) fig 16. typical output characteristics post-irradiation 1 mega rads (si) fig 13. typical output characteristics pre-irradiation fig 14. typical output characteristics post-irradiation 100k rads (si) note: bias conditions during radiation: v gs = 0 vdc, v ds = 80 vdc
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www.irf.com 11 pre-irradiation irhf7130, jansr2n7261 q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, !

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12 www.irf.com irhf7130, jansr2n7261 pre- irradiation pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l=4.1mh peak i l = 3.5a, v gs =12v i sd 3.5a, di/dt 140a/ s, v dd 100v, t j 150c foot notes: case outline and dimensions ? to-205af(modified to-39) legend 1- source 2- gate 3- drain ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 04/2006

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