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atf-55143 low noise enhancement mode pseudomorphic hemt in a surface mount plastic package data sheet description avago technologies atf?55143 is a high dynamic range, very low noise, single supply e ? phemt housed in a 4?lead sc? 70 (sot?343) surface mount plastic package. the combination of high gain, high linearity and low noise makes the atf ? 55143 ideal for cellular/pcs hand ? sets, wireless data systems (wll/rll, wlan and mmds) and other systems in the 450 mhz to 6 ghz frequency range. surface mount package sot-343 features ? high linearity performance ? single supply enhancement mode technology [1] ? very low noise fgure ? excellent uniformity in product specifcations ? 400 micron gate width ? low cost surface mount small plastic package sot ? 343 (4 lead sc?70) ? tape ?and? reel packaging option available ? lead free option available specifcations ? 2 ghz; 2.7v, 10 ma (typ.) ? 24.2 dbm output 3 rd order intercept ? 14.4 dbm output power at 1 db gain compression ? 0.6 db noise fgure ? 17.7 db associated gain ? lead ? free option available applications ? low noise amplifer for cellular/pcs handsets ? lna for wlan, wll/rll and mmds applications ? general purpose discrete e ?phemt for other ultra low noise applications note: 1. enhancement mode technology requires positive vgs, thereby eliminating the need for the negative gate voltage associated with conventional depletion mode devices. pin connections and package marking source drain gate source 5fx note: top view. package marking provides orientation and identifcation 5f = device code x = date code character identifes month of manufacture. attention: observe precautions for handling electrostatic sensitive devices. esd machine model (class a) esd human body model (class 0) refer to avago application note a004r: electrostatic discharge damage and control.
2 atf-55143 absolute maximum ratings [1] absolute symbol parameter units maximum v ds drain ? source voltage [2] v 5 v gs gate ? source voltage [2] v ? 5 to 1 v gd gate drain voltage [2] v ? 5 to 1 i ds drain current [2] ma 100 i gs gate current [5] ma 1 p diss total power dissipation [3] mw 270 p in max. rf input power [5] (vds=2.7v, ids=10ma) dbm 10 (vds=0v, ids=0ma) dbm 10 (vds=0v, ids=0ma ) dbm 10 dbm 10 t ch channel temperature c 150 t stg storage temperature c ? 65 to 150 jc thermal resistance [4] c/w 235 esd (human body model) v 200 esd (machine model) v 25 notes: 1. operation of this device above any one of these parameters may cause permanent damage. 2. assumes dc quiescent conditions. 3. source lead temperature is 25c. derate 4.3 mw/c for t l > 87c. 4. thermal resistance measured using 150c liquid crystal measure ? ment method. 5. device can safely handle +10 dbm rf input power as long as i gs is limited to 1 ma. i gs at p 1db drive level is bias circuit dependent. see applications section for additional information. product consistency distribution charts [6, 7] v ds (v) figure 1. typical i-v curves. (v gs = 0.1 v per step) i ds (ma) 0.4 v 0.3v 0.5 v 0.6 v 0.7 v 0 2 1 4 6 5 3 7 70 60 50 40 30 20 10 0 oip3 (dbm) figure 2. oip3 @ 2.7 v, 10 ma. lsl = 22.0, nominal = 24.2 22 23 25 24 26 300 250 200 150 100 50 0 cpk = 2.02 stdev = 0.36 -3 std gain (db) figure 3. gain @ 2.7 v, 10 ma. usl = 18.5, lsl = 15.5, nominal = 17.7 15 17 16 18 19 200 160 120 80 40 0 cpk = 1.023 stdev = 0.28 -3 std +3 std nf (db) figure 4. nf @ 2.7 v, 10 ma. usl = 0.9, nominal = 0.6 0.43 0.63 0.53 0.83 0.73 0.93 240 200 160 120 80 40 0 cpk = 3.64 stdev = 0.031 +3 std notes: 6. distribution data sample size is 500 samples taken from 6 diferent wafers. future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 7. measurements made on production test board. this circuit represents a trade ? of between an optimal noise match and a realizeable match based on production test equipment. circuit losses have been de ? embedded from actual measurements.
3 atf-55143 electrical specifcations t a = 25c, rf parameters measured in a test circuit for a typical device symbol parameter and test condition units min. typ. [2] max. vgs operational gate voltage vds = 2.7v, ids = 10 ma v 0.3 0.47 0.65 vth threshold voltage vds = 2.7v, ids = 2 ma v 0.18 0.37 0.53 idss saturated drain current vds = 2.7v, vgs = 0v a 0.1 3 gm transconductance vds = 2.7v, gm = ? idss/ ? vgs; mmho 110 220 285 ? vgs = 0.75 C 0.7 = 0.05v igss gate leakage current vgd = vgs = ? 2.7v a 95 nf noise figure [1] f = 2 ghz vds = 2.7v, ids = 10 ma db 0.6 0.9 f = 900 mhz vds = 2.7v, ids = 10 ma db 0.3 ga associated gain [1] f = 2 ghz vds = 2.7v, ids = 10 ma db 15.5 17.7 18.5 f = 900 mhz vds = 2.7v, ids = 10 ma db 21.6 oip3 output 3 rd order f = 2 ghz vds = 2.7v, ids = 10 ma dbm 22.0 24.2 intercept point [1] f = 900 mhz vds = 2.7v, ids = 10 ma dbm 22.3 p1db 1db compressed f = 2 ghz vds = 2.7v, ids = 10 ma dbm 14.4 output power [1] f = 900 mhz vds = 2.7v, ids = 10 ma dbm 14.2 notes: 1. measurements obtained using production test board described in figure 5. 2. typical values determined from a sample size of 500 parts from 6 wafers. input 50 ohm t ransmission line including gate bias t (0.3 db loss) input matching circuit _mag = 0.4 _ang = 83 (0.3 db loss) output matching circuit _mag = 0.5 _ang = -26 (1.2 db loss) dut 50 ohm t ransmission line including drain bias t (0.3 db loss) output figure 5. block diagram of 2 ghz production test board used for noise figure, associated gain, p1db, oip3, and iip3 measurements. this circuit represents a trade-of between an optimal noise match, maximum oip3 match and associated impedance matching circuit losses. circuit losses have been de-embedded from actual measurements.
4 atf-55143 typical performance curves figure 6. gain vs. bias over frequency. [1] frequency (ghz) gain (db) 0 6 2 1 4 5 3 30 25 20 15 10 5 2v, 10 ma 2.7v, 10 ma figure 8. oip3 vs. bias over frequency. [1] frequency (ghz) oip3 (dbm) 0 6 2 1 4 5 3 2v, 10 ma 2.7v, 10 ma 27 25 23 21 19 17 15 figure 9. iip3 vs. bias over frequency. [1] frequency (ghz) iip3 (dbm) 0 6 2 1 4 5 3 2v, 10 ma 2.7v, 10 ma 15 10 5 0 -5 figure 10. p1db vs. bias over frequency. [1,2] frequency (ghz) p1db (dbm) 0 6 2 1 4 5 3 2v, 10 ma 2.7v, 10 ma 16 14 12 10 8 figure 11. gain vs. i ds and v ds at 2 ghz. [1] 2v 2.7v 3v i ds (ma) gain (db) 0 3 5 10 5 2 0 2 5 3 0 15 21 20 19 18 17 16 15 figure 13. oip3 vs. i ds and v ds at 2 ghz. [1] i ds (ma) oip3 (dbm) 0 3 5 35 33 31 29 27 25 23 21 19 2v 2.7v 3v 10 5 2 0 2 5 3 0 15 figure 14. iip3 vs. i ds and v ds at 2 ghz. [1] i ds (ma) iip3 (dbm) 0 3 5 16 14 12 10 8 6 4 2 0 2v 2.7v 3v 10 5 2 0 2 5 3 0 15 figure 7. fmin vs. frequency and bias. frequency (ghz) fmin (db) 0 6 2 1 4 5 3 2v, 10 ma 2.7v, 10 ma 1.2 1.0 0.8 0.6 0.4 0.2 0 figure 12. fmin vs. i ds and v ds at 2 ghz. i ds (ma) fmin (db) 0 3 5 0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 2v 2.7v 3v 10 5 2 0 2 5 3 0 15 notes: 1. measurements at 2 ghz were made on a fxed tuned production test board that was tuned for optimal oip3 match with reasonable noise fgure at 2.7 v, 10 ma bias. this circuit represents a trade ? of between optimal noise match, maximum oip3 match and a realizable match based on production test board requirements. measurements taken above and below 2 ghz were made using a double stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum oip3. circuit losses have been de ? embedded from actual measurements. 2. p1db measurements are performed with passive biasing. quiescent drain current, i dsq , is set with zero rf drive applied. as p1db is approached, the drain current may increase or decrease depending on frequency and dc bias point. at lower values of i dsq , the device is running close to class b as power output approaches p1db. this results in higher p1db and higher pae (power added efciency) when compared to a device that is driven by a constant current source as is typically done with active biasing. as an example, at a v ds = 2.7v and i dsq = 5 ma, i d increases to 15 ma as a p1db of +14.5 dbm is approached.
5 atf-55143 typical performance curves, continued figure 15. p1db vs. i dq and v ds at 2 ghz. [1,2] i dq (ma) p1db (dbm) 0 3 5 2v 2.7v 3v 10 5 2 0 2 5 3 0 15 17 16 15 14 13 12 11 10 figure 16. gain vs. i ds and v ds at 900 mhz. [1] i ds (ma) gain (db) 0 4 0 20 10 5 1 5 2 5 3 5 30 2v 2.7v 3v 25 24 23 22 21 20 19 18 figure 18. oip3 vs. i ds and v ds at 900 mhz. [1] i ds (ma) oip3 (dbm) 0 3 5 32 30 28 26 24 22 20 18 16 2v 2.7v 3v 10 5 2 0 2 5 3 0 15 figure 19. iip3 vs. i ds and v ds at 900 mhz. [1] i ds (ma) iip3 (dbm) 0 3 5 7 6 5 4 3 2 1 0 -1 -2 2v 2.7v 3v 10 5 2 0 2 5 3 0 15 figure 20. p1db vs. i dq and v ds at 900 mhz. [1,2] i dq (ma) p1db (dbm) 0 3 5 17 16 15 14 13 12 11 10 9 2v 2.7v 3v 10 5 2 0 2 5 3 0 15 figure 17. fmin vs. i ds and v ds at 900 mhz. i ds (ma) fmin (db) 0 3 5 2v 2.7v 3v 10 5 2 0 2 5 3 0 15 0.35 0.30 0.25 0.20 0.15 0.10 notes: 1. measurements at 2 ghz were made on a fxed tuned production test board that was tuned for optimal oip3 match with reasonable noise fgure at 2.7 v, 10 ma bias. this circuit represents a trade ? of between optimal noise match, maximum oip3 match and a realizable match based on production test board requirements. measurements taken above and below 2 ghz were made using a double stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum oip3. circuit losses have been de ? embedded from actual measurements. 2. p1db measurements are performed with passive biasing. quiescent drain current, i dsq , is set with zero rf drive applied. as p1db is approached, the drain current may increase or decrease depending on frequency and dc bias point. at lower values of i dsq , the device is running close to class b as power output approaches p1db. this results in higher p1db and higher pae (power added efciency) when compared to a device that is driven by a constant current source as is typically done with active biasing. as an example, at a v ds = 2.7v and i dsq = 5 ma, i d increases to 15 ma as a p1db of +14.5 dbm is approached.
6 atf-55143 typical performance curves, continued iip3 (dbm) figure 21. gain vs. temperature and frequency with bias at 2.7v, 10 ma. [1] frequency (ghz) gain (db) 0 6 2 1 4 5 3 28 23 18 13 8 25 c -40 c 85 c figure 23. oip3 vs. temperature and frequency with bias at 2.7v, 10 ma. [1] frequency (ghz) oip3 (dbm) 0 6 2 1 4 5 3 25 c -40 c 85 c 25 24 23 22 21 20 19 figure 24. iip3 vs. temperature and frequency with bias at 2.7v, 10 ma. [1] frequency (ghz) 0 6 2 1 4 5 3 25 c -40 c 85 c 16 14 12 10 8 6 4 2 0 -2 -4 -6 figure 25. p1db vs. temperature and frequency with bias at 2.7v, 10 ma. [1,2] frequency (ghz) p1db (dbm) 0 6 2 1 4 5 3 25 c -40 c 85 c 16 15 14 13 12 11 10 figure 22. fmin vs. frequency and temperature at 2.7v, 10 ma. frequency (ghz) fmin (db) 0 6 2 1 4 5 3 2.0 1.5 1.0 0.5 0 25 c -40 c 85 c notes: 1. measurements at 2 ghz were made on a fxed tuned production test board that was tuned for optimal oip3 match with reasonable noise fgure at 2.7 v, 10 ma bias. this circuit represents a trade ? of between optimal noise match, maximum oip3 match and a realizable match based on production test board requirements. measurements taken above and below 2 ghz were made using a double stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum oip3. circuit losses have been de ? embedded from actual measurements. 2. p1db measurements are performed with passive biasing. quiescent drain current, i dsq , is set with zero rf drive applied. as p1db is approached, the drain current may increase or decrease depending on frequency and dc bias point. at lower values of i dsq , the device is running close to class b as power output approaches p1db. this results in higher p1db and higher pae (power added efciency) when compared to a device that is driven by a constant current source as is typically done with active biasing. as an example, at a v ds = 2.7v and i dsq = 5 ma, i d increases to 15 ma as a p1db of +14.5 dbm is approached.
7 atf-55143 typical scattering parameters, v ds = 2v, i ds = 10 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.998 ?6.5 20.78 10.941 174.9 0.006 86.1 0.796 ?4.2 32.61 0.5 0.963 ?31.7 20.37 10.434 154.8 0.029 70.2 0.762 ?20.4 25.56 0.9 0.894 ?54.7 19.57 9.516 137.1 0.048 56.9 0.711 ?34.4 22.97 1.0 0.879 ?60.1 19.32 9.252 133.0 0.051 54 0.693 ?37.3 22.59 1.5 0.793 ?84.1 18.07 8.009 115.2 0.066 41.5 0.622 ?49.6 20.84 1.9 0.731 ?100.8 17.11 7.166 102.8 0.075 33.6 0.570 ?57.1 19.80 2.0 0.718 ?104.7 16.86 6.970 100.1 0.077 31.8 0.559 ?58.7 19.57 2.5 0.657 ?123.7 15.79 6.159 86.6 0.084 23.7 0.503 ?66.3 18.65 3.0 0.611 ?141.8 14.80 5.494 74.2 0.090 16.5 0.446 ?73 17.86 4.0 0.561 ?177.5 13.10 4.517 51.0 0.098 3.6 0.343 ?87.6 16.64 5.0 0.558 149.4 11.52 3.768 29.3 0.102 ?8.3 0.269 ?104.4 15.68 6.0 0.566 122.5 10.06 3.183 9.4 0.104 ?18.4 0.224 ?120.4 14.08 7.0 0.583 99.7 8.78 2.748 ?9.2 0.106 ?28.5 0.189 ?137.3 11.96 8.0 0.601 77.7 7.62 2.404 ?27.4 0.105 ?38.4 0.140 ?149.3 10.40 9.0 0.636 57.5 6.63 2.147 ?45.3 0.110 ?44.7 0.084 ?170 9.51 10.0 0.708 38.3 5.66 1.919 ?64.6 0.117 ?56.6 0.08 109.3 9.34 11.0 0.76 21.8 4.45 1.670 ?83.1 0.119 ?68.2 0.151 64.5 8.77 12.0 0.794 7.6 3.32 1.465 ?100.2 0.121 ?79.3 0.217 40.8 8.14 13.0 0.819 ?7.8 2.29 1.302 ?117.9 0.121 ?91.4 0.262 20.8 7.55 14.0 0.839 ?23.6 1.27 1.157 ?136.7 0.122 ?104.4 0.327 0.5 6.92 15.0 0.862 ?37.9 ?0.19 0.978 ?155.2 0.115 ?117.7 0.431 ?16.4 6.14 16.0 0.853 ?51.0 ?1.83 0.810 ?171.8 0.109 ?129.4 0.522 ?28.6 4.53 17.0 0.868 ?60.1 ?3.25 0.688 173.9 0.107 ?139.9 0.588 ?41.6 3.91 18.0 0.911 ?70.3 ?4.44 0.601 158.5 0.102 ?153.2 0.641 ?55.8 4.79 freq f min opt opt r n/50 g a ghz db mag. ang. db 0.5 0.21 0.65 17.5 0.13 24.84 0.9 0.26 0.60 22.6 0.12 22.86 1.0 0.27 0.55 27.0 0.12 22.39 1.9 0.42 0.55 49.4 0.11 18.77 2.0 0.43 0.54 51.7 0.11 18.42 2.4 0.50 0.45 61.5 0.10 17.14 3.0 0.59 0.40 78.1 0.09 15.50 3.9 0.73 0.26 111.9 0.07 13.62 5.0 0.92 0.21 172.5 0.06 12.05 5.8 1.04 0.24 ?151.5 0.07 11.28 6.0 1.06 0.23 ?144.5 0.08 11.12 7.0 1.22 0.28 ?107.1 0.14 10.45 8.0 1.42 0.33 ?75.5 0.24 9.84 9.0 1.57 0.43 ?51.5 0.38 9.10 10.0 1.71 0.54 ?33.3 0.57 8.03 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise fgure measurements made at 16 diferent impedances using an atn np5 test system. from these measurements f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the efect of four plated through via holes con ? necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. typical noise parameters, v ds = 2v, i ds = 10 ma figure 26. msg/mag and |s 21 | 2 vs. frequency at 2v, 10 ma. ms g |s 21 | 2 frequency (ghz) msg/mag and |s 21 | 2 (db) 0 2 0 10 5 1 5 35 30 25 20 15 10 5 0 -5 -10 mag
8 atf-55143 typical scattering parameters, v ds = 2v, i ds = 15 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.997 ?7.1 22.33 13.074 174.4 0.006 85.7 0.752 ?4.6 33.38 0.5 0.953 ?34.5 21.82 12.333 153.0 0.027 69.4 0.712 ?22.1 26.60 0.9 0.873 ?58.8 20.86 11.042 134.4 0.044 56.3 0.654 ?36.7 24.00 1.0 0.856 ?64.6 20.58 10.693 130.3 0.047 53.3 0.636 ?39.6 23.57 1.5 0.759 ?89.3 19.14 9.059 112.2 0.060 41.6 0.560 ?51.8 21.79 1.9 0.695 ?106.2 18.06 7.998 100.0 0.068 34.4 0.509 ?59.0 20.70 2.0 0.681 ?110.2 17.8 7.762 97.2 0.070 32.8 0.498 ?60.5 20.45 2.5 0.621 ?129.3 16.62 6.773 83.9 0.076 25.6 0.443 ?67.5 19.50 3.0 0.578 ?147.4 15.54 5.985 71.8 0.082 19.4 0.390 ?73.6 18.63 4.0 0.536 177.3 13.71 4.850 49.4 0.091 7.9 0.295 ?87.3 17.27 5.0 0.541 145.1 12.09 4.020 28.4 0.096 ?3.0 0.225 ?104.3 16.22 6.0 0.554 119.1 10.59 3.384 9.0 0.101 ?12.7 0.183 ?120.8 13.89 7.0 0.574 97.0 9.3 2.917 ?9.1 0.105 ?23.0 0.150 ?138.4 12.18 8.0 0.594 75.5 8.13 2.549 ?27.0 0.106 ?33.1 0.101 ?149.7 10.73 9.0 0.63 55.9 7.12 2.271 ?44.6 0.113 ?40.4 0.047 ?175.2 9.87 10.0 0.703 37.3 6.14 2.028 ?63.5 0.121 ?53.2 0.078 82.0 9.69 11.0 0.757 21.1 4.92 1.762 ?81.7 0.123 ?65.3 0.162 51.1 9.12 12.0 0.793 7.1 3.79 1.547 ?98.5 0.125 ?76.9 0.231 31.3 8.52 13.0 0.818 ?8.2 2.77 1.376 ?115.9 0.125 ?89.5 0.275 12.8 7.92 14.0 0.841 ?23.8 1.76 1.225 ?134.3 0.125 ?102.7 0.339 ?5.5 7.38 15.0 0.863 ?38.1 0.32 1.038 ?152.5 0.118 ?116.3 0.438 ?21.0 6.54 16.0 0.856 ?51.2 ?1.29 0.862 ?168.8 0.111 ?128.0 0.524 ?32.0 4.99 17.0 0.871 ?60.2 ?2.66 0.736 177.0 0.109 ?138.6 0.586 ?44.4 4.38 18.0 0.913 ?70.4 ?3.8 0.646 161.7 0.105 ?151.9 0.636 ?58.1 5.20 freq f min opt opt r n/50 g a ghz db mag. ang. db 0.5 0.21 0.627 18.7 0.1 25.41 0.9 0.25 0.56 23.6 0.1 23.47 1.0 0.26 0.53 27.3 0.1 23.02 1.9 0.4 0.51 49.7 0.09 19.44 2.0 0.41 0.5 52.6 0.09 19.09 2.4 0.48 0.41 62.3 0.09 17.81 3.0 0.57 0.35 80.4 0.08 16.17 3.9 0.7 0.22 118.4 0.06 14.25 5.0 0.86 0.2 ?176.5 0.06 12.6 5.8 0.99 0.23 ?140.5 0.08 11.77 6.0 1.03 0.23 ?134.6 0.08 11.6 7.0 1.16 0.29 ?99.3 0.14 10.86 8.0 1.35 0.35 ?69.3 0.25 10.22 9.0 1.49 0.43 ?47.9 0.39 9.48 10.0 1.62 0.54 ?30.8 0.57 8.47 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise fgure measurements made at 16 diferent impedances using an atn np5 test system. from these measurements a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the efect of four plated through via holes con ? necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. typical noise parameters, v ds = 2v, i ds = 15 ma figure 27. msg/mag and |s 21 | 2 vs. frequency at 2v, 15 ma. ms g frequency (ghz) msg/mag and |s 21 | 2 (db) 0 2 0 10 5 1 5 40 35 30 25 20 15 10 5 0 -5 -10 |s 21 | 2 ma g
9 atf-55143 typical scattering parameters, v ds = 2v, i ds = 20 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.997 ?7.5 23.23 14.512 174.2 0.006 85.5 0.722 ?4.8 33.84 0.5 0.947 ?36.2 22.66 13.582 151.8 0.026 69 0.679 ?22.9 27.18 0.9 0.858 ?61.3 21.59 12.011 132.8 0.041 56 0.618 ?37.7 24.67 1.0 0.839 ?67.2 21.29 11.602 128.6 0.044 53.2 0.599 ?40.6 24.21 1.5 0.738 ?92.4 19.74 9.703 110.4 0.056 42.1 0.523 ?52.5 22.39 1.9 0.673 ?109.4 18.59 8.5 98.3 0.063 35.5 0.474 ?59.3 21.30 2.0 0.659 ?113.5 18.32 8.238 95.5 0.065 34 0.463 ?60.7 21.03 2.5 0.599 ?132.6 17.07 7.135 82.4 0.071 27.5 0.411 ?67.1 20.02 3.0 0.558 ?150.6 15.95 6.272 70.5 0.077 21.8 0.361 ?72.7 19.11 4.0 0.521 174.4 14.06 5.047 48.5 0.086 11.1 0.272 ?85.6 17.69 5.0 0.531 142.8 12.40 4.171 28 0.093 0.7 0.205 ?102.3 16.52 6.0 0.546 117.4 10.89 3.505 8.9 0.099 ?9 0.166 ?118.7 13.92 7.0 0.568 95.6 9.60 3.021 ?9 0.104 ?19.4 0.134 ?136.5 12.35 8.0 0.588 74.4 8.42 2.637 ?26.7 0.106 ?29.8 0.086 ?146.2 10.93 9.0 0.625 55.2 7.41 2.348 ?44.1 0.115 ?37.5 0.032 ?171.2 10.11 10.0 0.699 36.8 6.43 2.097 ?62.9 0.123 ?50.7 0.077 71.3 9.93 11.0 0.754 20.9 5.21 1.823 ?80.9 0.125 ?63.2 0.165 46 9.35 12.0 0.791 6.9 4.08 1.60 ?97.5 0.127 ?75.1 0.235 27.6 8.75 13.0 0.818 ?8.2 3.07 1.424 ?114.7 0.128 ?87.8 0.278 9.8 8.22 14.0 0.839 ?23.8 2.07 1.269 ?133.1 0.127 ?101.4 0.340 ?8.1 7.60 15.0 0.864 ?38.1 0.65 1.078 ?151 0.12 ?114.9 0.440 ?22.8 6.84 16.0 0.858 ?51.1 ?0.95 0.896 ?167.3 0.113 ?126.8 0.523 ?33.4 5.28 17.0 0.873 ?60.2 ?2.30 0.768 178.6 0.111 ?137.5 0.583 ?45.6 4.68 18.0 0.917 ?70.4 ?3.41 0.675 163.4 0.106 ?150.9 0.632 ?59 5.62 freq f min opt opt r n/50 g a ghz db mag. ang. db 0.5 0.21 0.63 18.4 0.1 25.67 0.9 0.25 0.54 24.4 0.09 23.78 1.0 0.26 0.53 28.8 0.09 23.34 1.9 0.39 0.49 50.6 0.09 19.84 2.0 0.4 0.47 52.8 0.09 19.5 2.4 0.48 0.38 63.6 0.08 18.24 3.0 0.56 0.32 82 0.07 16.61 3.9 0.69 0.2 125.1 0.06 14.67 5.0 0.85 0.2 ?167.2 0.06 12.97 5.8 0.98 0.24 ?133.4 0.08 12.09 6.0 1.02 0.24 ?128.4 0.09 10.89 7.0 1.16 0.3 ?94.8 0.15 11.12 8.0 1.34 0.36 ?66.4 0.25 10.45 9.0 1.49 0.45 ?45.7 0.4 9.73 10.0 1.62 0.55 ?28.6 0.6 8.8 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise fgure measurements made at 16 diferent impedances using an atn np5 test system. from these measurements a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the efect of four plated through via holes con ? necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. typical noise parameters, v ds = 2v, i ds = 20 ma figure 28. msg/mag and |s 21 | 2 vs. frequency at 2v, 20 ma. ms g frequency (ghz) msg/mag and |s 21 | 2 (db) 0 2 0 10 5 1 5 40 35 30 25 20 15 10 5 0 -5 -10 |s 21 | 2 mag
10 atf-55143 typical scattering parameters, v ds = 2.7v, i ds = 10 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.998 ?6.4 20.86 11.044 174.9 0.006 86.2 0.819 ?3.9 32.65 0.5 0.963 ?31.2 20.46 10.549 155 0.026 70.4 0.786 ?19.1 26.08 0.9 0.896 ?53.8 19.68 9.641 137.5 0.043 57.3 0.737 ?32 23.51 1.0 0.881 ?59.2 19.44 9.376 133.4 0.047 54.4 0.72 ?34.7 23.00 1.5 0.794 ?83 18.21 8.133 115.6 0.06 42.2 0.651 ?46 21.32 1.9 0.732 ?99.5 17.25 7.284 103.3 0.068 34.4 0.602 ?52.9 20.30 2.0 0.718 ?103.4 17.01 7.087 100.6 0.07 32.6 0.592 ?54.5 20.05 2.5 0.655 ?122.3 15.94 6.267 87.1 0.076 24.8 0.538 ?61.3 19.16 3.0 0.608 ?140.2 14.96 5.599 74.8 0.082 17.9 0.485 ?67.3 18.34 4.0 0.553 ?175.9 13.28 4.615 51.7 0.089 5.6 0.39 ?80.1 17.15 5.0 0.548 150.9 11.74 3.862 30.2 0.092 ?5.4 0.321 ?94.7 16.23 6.0 0.556 123.9 10.30 3.272 10.3 0.094 ?14.6 0.280 ?109 14.17 7.0 0.573 100.9 9.04 2.83 ?8.3 0.096 ?23.9 0.247 ?124.1 12.29 8.0 0.590 78.6 7.89 2.481 ?26.5 0.096 ?32.8 0.204 ?134.3 10.78 9.0 0.625 58.4 6.94 2.224 ?44.3 0.102 ?38 0.152 ?146.7 9.94 10.0 0.699 39.2 6.03 2.002 ?63.6 0.112 ?49.7 0.098 166.8 9.89 11.0 0.752 22.7 4.89 1.755 ?82.3 0.115 ?61.1 0.112 100 9.34 12.0 0.789 8.4 3.78 1.546 ?99.8 0.12 ?72.4 0.167 62.3 8.81 13.0 0.815 ?7 2.78 1.378 ?117.8 0.122 ?84.7 0.211 37 8.23 14.0 0.838 ?22.8 1.81 1.231 ?137 0.124 ?98.3 0.274 12.6 7.69 15.0 0.862 ?37.2 0.37 1.044 ?155.9 0.119 ?111.8 0.387 ?7.6 6.82 16.0 0.856 ?50.5 ?1.27 0.864 ?173.3 0.113 ?124.4 0.491 ?21.5 5.15 17.0 0.872 ?59.7 ?2.73 0.730 171.9 0.111 ?135.6 0.568 ?35.9 5.54 18.0 0.915 ?70 ?3.96 0.634 156 0.107 ?149.4 0.628 ?51.2 5.68 freq f min opt opt r n/50 g a ghz db mag. ang. db 0.5 0.2 0.64 19 0.12 25.29 0.9 0.26 0.59 22.7 0.12 23.24 1.0 0.27 0.54 26 0.12 22.76 1.9 0.39 0.54 48.3 0.11 19.01 2.0 0.4 0.54 49.9 0.11 18.66 2.4 0.48 0.45 59.8 0.1 17.35 3.0 0.57 0.39 75.6 0.09 15.69 3.9 0.72 0.26 108.7 0.07 13.79 5.0 0.88 0.2 167.5 0.06 12.26 5.8 1.02 0.22 ?154.8 0.07 11.52 6.0 1.04 0.21 ?147.8 0.08 11.37 7.0 1.19 0.26 ?107.9 0.13 10.76 8.0 1.39 0.32 ?75 0.23 10.2 9.0 1.54 0.41 ?51.6 0.36 9.48 10.0 1.65 0.53 ?33.6 0.54 8.38 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise fgure measurements made at 16 diferent impedances using an atn np5 test system. from these measurements a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the efect of four plated through via holes con ? necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. typical noise parameters, v ds = 2.7v, i ds = 10 ma figure 29. msg/mag and |s 21 | 2 vs. frequency at 2.7v, 10 ma. ms g |s 21 | 2 frequency (ghz) msg/mag and |s 21 | 2 (db) 0 2 0 10 5 1 5 35 30 25 20 15 10 5 0 -5 -10 ma g
11 atf-55143 typical scattering parameters, v ds = 2.7v, i ds = 20 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.997 ?7.4 23.29 14.603 174.2 0.005 85.8 0.755 ?4.4 34.65 0.5 0.947 ?35.8 22.72 13.682 152 0.024 69.2 0.713 ?21.1 27.56 0.9 0.860 ?60.8 21.67 12.116 133 0.038 56.2 0.652 ?34.6 25.04 1.0 0.840 ?66.6 21.37 11.705 128.8 0.041 53.4 0.633 ?37.3 24.56 1.5 0.739 ?91.7 19.83 9.802 110.6 0.051 42.4 0.56 ?48 22.84 1.9 0.672 ?108.6 18.68 8.587 98.5 0.057 36 0.513 ?54 21.78 2.0 0.658 ?112.7 18.41 8.323 95.8 0.059 34.5 0.503 ?55.3 21.49 2.5 0.597 ?131.7 17.16 7.21 82.7 0.065 28.4 0.455 ?60.9 20.45 3.0 0.554 ?149.7 16.04 6.341 70.9 0.069 23 0.409 ?65.7 19.63 4.0 0.515 175.4 14.17 5.114 49.1 0.078 13.3 0.328 ?76.7 18.17 5.0 0.523 143.7 12.55 4.239 28.6 0.084 3.7 0.267 ?90.7 17.03 6.0 0.538 118.2 11.06 3.572 9.6 0.09 ?5 0.232 ?104.8 14.23 7.0 0.559 96.4 9.78 3.084 ?8.4 0.095 ?14.7 0.201 ?119.6 12.69 8.0 0.579 75.2 8.62 2.699 ?25.9 0.098 ?24.2 0.162 ?127.4 11.32 9.0 0.615 56 7.65 2.413 ?43.3 0.107 ?31 0.113 ?136.5 10.53 10.0 0.690 37.7 6.73 2.171 ?62.1 0.117 ?44 0.055 160.9 10.46 11.0 0.748 21.7 5.57 1.9 ?80.3 0.122 ?56.4 0.096 75.9 10.01 12.0 0.787 7.9 4.48 1.675 ?97.3 0.126 ?68.5 0.164 45.5 9.48 13.0 0.816 ?7.3 3.5 1.496 ?114.9 0.128 ?81.4 0.210 23.7 9.02 14.0 0.841 ?22.9 2.55 1.341 ?133.5 0.13 ?95.1 0.277 3 8.56 15.0 0.867 ?37.3 1.15 1.142 ?152.1 0.124 ?109.2 0.386 ?14.3 7.65 16.0 0.862 ?50.5 ?0.44 0.95 ?169 0.118 ?121.9 0.483 ?26.3 5.86 17.0 0.877 ?59.7 ?1.83 0.81 176.3 0.116 ?133.3 0.555 ?39.5 5.25 18.0 0.921 ?70 ?2.99 0.709 160.6 0.111 ?147.1 0.612 ?53.9 6.59 freq f min opt opt r n/50 g a ghz db mag. ang. db 0.5 0.20 0.65 17.6 0.1 25.79 0.9 0.25 0.55 23.6 0.1 23.9 1.0 0.26 0.53 28.3 0.1 23.45 1.9 0.39 0.49 49 0.09 19.94 2.0 0.4 0.48 51.5 0.09 19.6 2.4 0.47 0.38 62 0.08 18.34 3.0 0.56 0.32 79.6 0.07 16.71 3.9 0.69 0.19 120 0.06 14.8 5.0 0.85 0.18 ?168.8 0.06 13.14 5.8 0.98 0.22 ?135.4 0.08 12.3 6.0 1.01 0.22 ?128.7 0.09 12.12 7.0 1.15 0.29 ?94.6 0.15 11.38 8.0 1.32 0.35 ?66.7 0.25 10.74 9.0 1.47 0.44 ?45.7 0.38 10.04 10.0 1.58 0.54 ?28.6 0.57 9.1 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise fgure measurements made at 16 diferent impedances using an atn np5 test system. from these measurements a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the efect of four plated through via holes con ? necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. typical noise parameters, v ds = 2.7v, i ds = 20 ma figure 30. msg/mag and |s 21 | 2 vs. frequency at 2.7v, 20 ma. ms g |s 21 | 2 frequency (ghz) msg/mag and |s 21 | 2 (db) 0 2 0 10 5 1 5 40 35 30 25 20 15 10 5 0 -5 ma g
12 atf-55143 typical scattering parameters, v ds = 3v, i ds = 20 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.998 ?7.4 23.34 14.697 174.2 0.005 85.1 0.763 ?4.3 34.68 0.5 0.947 ?35.9 22.77 13.762 151.9 0.023 69.2 0.721 ?20.6 27.77 0.9 0.859 ?60.9 21.71 12.178 132.9 0.037 56.2 0.661 ?33.8 25.17 1.0 0.839 ?66.7 21.41 11.764 128.7 0.039 53.5 0.642 ?36.3 24.79 1.5 0.738 ?91.8 19.86 9.844 110.5 0.050 42.5 0.570 ?46.7 22.94 1.9 0.671 ?108.7 18.71 8.621 98.5 0.055 36.2 0.524 ?52.5 21.95 2.0 0.657 ?112.7 18.44 8.354 95.7 0.057 34.8 0.514 ?53.7 21.66 2.5 0.595 ?131.7 17.19 7.233 82.7 0.062 28.7 0.468 ?59.1 20.67 3.0 0.552 ?149.8 16.07 6.36 70.9 0.067 23.5 0.423 ?63.8 19.77 4.0 0.513 175.4 14.2 5.13 49.1 0.075 14.2 0.345 ?74.3 18.35 5.0 0.521 143.8 12.58 4.256 28.7 0.081 4.9 0.287 ?87.7 16.82 6.0 0.536 118.3 11.1 3.588 9.7 0.087 ?3.5 0.254 ?101.6 14.32 7.0 0.557 96.5 9.83 3.1 ?8.2 0.092 ?12.9 0.224 ?116.1 12.80 8.0 0.577 75.3 8.67 2.715 ?25.8 0.095 ?22.1 0.187 ?124.3 11.44 9.0 0.613 56.2 7.71 2.43 ?43.1 0.105 ?28.7 0.140 ?133.5 10.68 10.0 0.687 38 6.81 2.192 ?61.8 0.116 ?41.7 0.075 ?178.8 10.67 11.0 0.746 22 5.67 1.922 ?80.2 0.121 ?54 0.084 94 10.24 12.0 0.787 8.1 4.59 1.697 ?97.2 0.126 ?66.1 0.145 54.4 9.82 13.0 0.816 ?7 3.62 1.516 ?114.9 0.128 ?79.1 0.191 30 9.35 14.0 0.842 ?22.6 2.67 1.36 ?133.6 0.131 ?93 0.256 8 9.01 15.0 0.869 ?37 1.3 1.161 ?152.3 0.126 ?107.2 0.369 ?10.9 8.04 16.0 0.863 ?50.2 ?0.29 0.967 ?169.6 0.1200 ?120.2 0.471 ?23.5 6.10 17.0 0.879 ?59.6 ?1.7 0.822 175.6 0.118 ?131.9 0.548 ?37.3 5.47 18.0 0.924 ?69.8 ?2.87 0.719 159.7 0.113 ?145.9 0.608 ?52.2 7.40 freq f min opt opt r n/50 g a ghz db mag. ang. db 0.5 0.18 0.63 17.6 0.1 25.89 0.9 0.24 0.54 23.4 0.1 23.98 1.0 0.25 0.53 27.9 0.1 23.53 1.9 0.39 0.48 48.4 0.09 20 2.0 0.4 0.47 51.6 0.09 19.66 2.4 0.47 0.39 61.9 0.08 18.4 3.0 0.56 0.32 78.7 0.07 16.77 3.9 0.68 0.19 119.8 0.06 14.85 5.0 0.85 0.19 ?170.4 0.06 13.21 5.8 0.97 0.22 ?135.1 0.08 12.37 6.0 1.01 0.22 ?128.4 0.09 12.2 7.0 1.14 0.28 ?94.7 0.14 11.47 8.0 1.31 0.35 ?66.8 0.25 10.84 9.0 1.47 0.44 ?45.6 0.38 10.15 10.0 1.59 0.54 ?28.9 0.57 9.22 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise fgure measurements made at 16 diferent impedances using an atn np5 test system. from these measurements a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the efect of four plated through via holes con ? necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. typical noise parameters, v ds = 3v, i ds = 20 ma figure 31. msg/mag and |s 21 | 2 vs. frequency at 3v, 20 ma. ms g |s 21 | 2 frequency (ghz) msg/mag and |s 21 | 2 (db) 0 2 0 10 5 1 5 40 35 30 25 20 15 10 5 0 -5 mag
13 atf-55143 typical scattering parameters, v ds = 3v, i ds = 30 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.996 ?7.9 24.3 16.407 173.9 0.005 85.6 0.729 ?4.5 35.16 0.5 0.937 ?38.1 23.64 15.205 150.4 0.021 68.8 0.683 ?21.2 28.60 0.9 0.840 ?64.1 22.44 13.246 130.9 0.034 56.1 0.620 ?34.3 25.91 1.0 0.819 ?70.1 22.11 12.753 126.6 0.036 53.5 0.601 ?36.8 25.49 1.5 0.712 ?95.7 20.43 10.507 108.4 0.046 43.4 0.531 ?46.5 23.59 1.9 0.646 ?112.8 19.2 9.117 96.4 0.051 37.7 0.488 ?51.8 22.52 2.0 0.631 ?116.8 18.91 8.823 93.7 0.052 36.6 0.479 ?52.9 22.30 2.5 0.571 ?135.8 17.59 7.578 80.9 0.057 31.3 0.437 ?57.7 21.24 3.0 0.531 ?153.9 16.42 6.625 69.4 0.062 26.6 0.398 ?61.8 20.29 4.0 0.499 171.8 14.49 5.303 48.1 0.071 18.1 0.328 ?71.6 18.73 5.0 0.512 140.9 12.84 4.386 28.1 0.078 9.2 0.273 ?84.7 16.32 6.0 0.529 116 11.35 3.693 9.4 0.085 0.7 0.242 ?98.5 14.36 7.0 0.552 94.7 10.07 3.188 ?8.3 0.092 ?9 0.214 ?112.9 12.98 8.0 0.573 73.9 8.91 2.79 ?25.6 0.096 ?18.6 0.179 ?120.5 11.65 9.0 0.609 55.1 7.94 2.496 ?42.7 0.107 ?25.8 0.134 ?128.4 10.92 10.0 0.684 37.3 7.05 2.251 ?61.3 0.118 ?39.2 0.064 ?173.3 10.93 11.0 0.744 21.6 5.91 1.975 ?79.5 0.123 ?51.9 0.075 87.5 10.53 12.0 0.786 7.9 4.83 1.744 ?96.4 0.128 ?64.3 0.141 49.7 10.16 13.0 0.816 ?7.2 3.86 1.56 ?113.9 0.131 ?77.5 0.187 26.4 9.84 14.0 0.842 ?22.8 2.93 1.401 ?132.6 0.133 ?91.7 0.250 5.1 9.51 15.0 0.870 ?37.1 1.56 1.197 ?151.1 0.128 ?106 0.367 ?12.6 8.39 16.0 0.866 ?50.3 ?0.01 0.998 ?168.2 0.122 ?119.1 0.467 ?24.8 6.39 17.0 0.882 ?59.7 ?1.4 0.851 177 0.12 ?130.8 0.543 ?38.2 5.77 18.0 0.927 ?69.9 ?2.55 0.746 161.2 0.115 ?144.8 0.602 ?52.8 8.12 freq f min opt opt r n/50 g a ghz db mag. ang. db 0.5 0.19 0.59 18.4 0.09 26.27 0.9 0.25 0.5 25.5 0.09 24.41 1.0 0.26 0.52 30.7 0.09 23.98 1.9 0.41 0.44 50.6 0.08 20.51 2.0 0.42 0.43 54.5 0.08 20.18 2.4 0.49 0.34 65.1 0.08 18.92 3.0 0.59 0.27 84.7 0.07 17.28 3.9 0.72 0.17 132.6 0.06 15.33 5.0 0.88 0.19 ?156.2 0.06 13.61 5.8 1.02 0.24 ?125.3 0.09 12.71 6.0 1.06 0.25 ?118.8 0.1 12.52 7.0 1.2 0.32 ?88.8 0.17 11.73 8.0 1.37 0.39 ?62.7 0.28 11.08 9.0 1.53 0.47 ?43.1 0.43 10.41 10.0 1.66 0.57 ?27 0.65 9.58 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise fgure measurements made at 16 diferent impedances using an atn np5 test system. from these measurements a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the efect of four plated through via holes con ? necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. typical noise parameters, v ds = 3v, i ds = 30 ma figure 32. msg/mag and |s 21 | 2 vs. frequency at 3v, 30 ma. ms g |s 21 | 2 frequency (ghz) msg/mag and |s 21 | 2 (db) 0 2 0 10 5 1 5 40 35 30 25 20 15 10 5 0 -5 mag
14 atf-55143 applications information introduction avago technologies atf?55143 is a low noise enhancement mode phemt designed for use in low cost commercial applications in the vhf through 6 ghz fre ? quency range. as opposed to a typical depletion mode phemt where the gate must be made negative with respect to the source for proper operation, an enhance ? ment mode phemt requires that the gate be made more positive than the source for normal operation. therefore a negative power supply voltage is not required for an enhancement mode device. biasing an enhancement mode phemt is much like biasing the typical bipolar junction transistor. instead of a 0.7 v base to emitter volt ? age, the atf ? 55143 enhancement mode phemt requires about a 0.47v potential between the gate and source for a nominal drain current of 10 ma. matching networks the techniques for impedance matching an enhance ? ment mode device are very similar to those for matching a depletion mode device. the only diference is in the method of supplying gate bias. s and noise parameters for various bias conditions are listed in this data sheet. the circuit shown in figure 33 shows a typical lna cir ? cuit normally used for 900 and 1900 mhz applications (consult the avago technologies website for application notes covering specifc applications). high pass imped ? ance matching networks consisting of l1/c1 and l4/c4 provide the appropriate match for noise fgure, gain, s11 and s22. the high pass structure also provides low fre ? quency gain reduction which can be benefcial from the standpoint of improving out ? of? band rejection. input c1 c2 c3 l1 r4 r1 r2 vdd r3 l2 l3 l4 q1 zo zo c4 c5 c6 output r5 figure 33. typical atf-55143 lna with passive biasing. capacitors c2 and c5 provide a low impedance in ?band rf bypass for the matching networks. resistors r3 and r4 provide a very important low frequency termination for the device. the resistive termination improves low frequency stability. capacitors c3 and c6 provide the low frequency rf bypass for resistors r3 and r4. their value should be chosen carefully as c3 and c6 also pro ? vide a termination for low frequency mixing products. these mixing products are as a result of two or more in ? band signals mixing and producing third order in ?band distortion products. the low frequency or difference mixing products are terminated by c3 and c6. for best suppression of third order distortion products based on the cdma 1.25 mhz signal spacing, c3 and c6 should be 0.1 f in value. smaller values of capacitance will not suppress the generation of the 1.25 mhz diference signal and as a result will show up as poorer two tone ip3 results. bias networks one of the major advantages of the enhancement mode technology is that it allows the designer to be able to dc ground the source leads and then merely apply a positive voltage on the gate to set the desired amount of quiescent drain current i d . whereas a depletion mode phemt pulls maximum drain current when v gs = 0v, an enhancement mode phemt pulls only a small amount of leakage current when v gs = 0v. only when v gs is increased above v th , the device threshold voltage, will drain current start to fow. at a v ds of 2.7v and a nominal v gs of 0.47 v, the drain current i d will be approximately 10 ma. the data sheet suggests a minimum and maximum v gs over which the desired amount of drain current will be achieved. it is also important to note that if the gate terminal is left open circuited, the device will pull some amount of drain current due to leakage current creating a voltage diferential between the gate and source terminals. passive biasing passive biasing of the atf ? 55143 is accomplished by the use of a voltage divider consisting of r1 and r2. the voltage for the divider is derived from the drain voltage which provides a form of voltage feedback through the use of r3 to help keep drain current constant. resis ? tor r5 (approximately 10k?) is added to limit the gate current of enhancement mode devices such as the atf?55143. this is especially important when the device is driven to p 1db or p sat . resistor r3 is calculated based on desired v ds , i ds and available power supply voltage. r3 = v dd C v ds (1) p i ds + i bb v dd is the power supply voltage. v ds is the device drain to source voltage. i ds is the desired drain current. i bb is the current fowing through the r1/r2 resistor volt ? age divider network.
15 the values of resistors r1 and r2 are calculated with the following formulas r1 = v gs (2) p i bb r2 = (v ds C v gs ) r1 (3) p v gs example circuit v dd = 3v v ds = 2.7v i ds = 10 ma v gs = 0.47 v choose i bb to be at least 10x the normal expected gate leakage current. i bb was conservatively chosen to be 0.5 ma for this example. using equations (1), (2), and (3) the resistors are calculated as follows r1 = 940? r2 = 4460? r3 = 28.6? active biasing active biasing provides a means of keeping the quies ? cent bias point constant over temperature and constant over lot to lot variations in device dc performance. the advantage of the active biasing of an enhancement mode phemt versus a depletion mode phemt is that a negative power source is not required. the techniques of active biasing an enhancement mode device are very similar to those used to bias a bipolar junction transis ? tor. input c1 c2 c3 c7 l1 r5 r6 r7 r3 r2 r1 q2 vdd r4 l2 l3 l4 q1 zo zo c4 c5 c6 output figure 34. typical atf-55143 lna with active biasing. an active bias scheme is shown in figure 34. r1 and r2 provide a constant voltage source at the base of a pnp transistor at q2. the constant voltage at the base of q2 is raised by 0.7 volts at the emitter. the constant emitter voltage plus the regulated v dd supply are present across resistor r3. constant voltage across r3 provides a con ? stant current supply for the drain current. resistors r1 and r2 are used to set the desired vds. the combined series value of these resistors also sets the amount of extra current consumed by the bias network. the equa ? tions that describe the circuits operation are as follows. v e = v ds + (i ds ? r4) (1) r3 = v dd C v e (2) p i ds v b = v e C v be (3) v b = r1 v dd (4) p r1 + r2 v dd = i bb (r1 + r2) (5) rearranging equation (4) provides the following for ? mula r2 = r 1 (v dd C v b ) (4a) v b and rearranging equation (5) provides the following formula r1 = v dd (5a) 9 i bb ( 1 + v dd C v b ) p v b example circuit v dd = 3v i bb = 0.5 ma v ds = 2.7v i ds = 10 ma r4 = 10? v be = 0.7 v equation (1) calculates the required voltage at the emit ? ter of the pnp transistor based on desired v ds and i ds through resistor r4 to be 2.8v. equation (2) calculates the value of resistor r3 which determines the drain cur ? rent i ds . in the example r3 = 20?. equation (3) calculates the voltage required at the junction of resistors r1 and r2. this voltage plus the step ? up of the base emitter junction determines the regulated v ds . equations (4) and (5) are solved simultaneously to determine the value of resistors r1 and r2. in the example r1=4200? and r2 =1800?. r7 is chosen to be 1k?. this resistor keeps a small amount of current fowing through q2 to help maintain bias stability. r6 is chosen to be 10k?. this value of resistance is necessary to limit q1 gate current in the presence of high rf drive levels (especially when q1 is driven to the p 1db gain compression point). c7 provides a low frequency bypass to keep noise from q2 efecting the operation of q1. c7 is typically 0.1 f.
16 atf-55143 die model nfet=yes pfet=no vto =0.3 beta=0.444 lambda=72e-3 alpha=13 tau= tnom=16.85 idstc= ucrit=-0.72 vgexp=1.91 gamds=1e-4 vtotc= betatce= rgs=0.5 ohm rf= gscap=2 cgs=0.6193 pf cgd=0.1435 pf gdcap=2 fc=0.65 rgd=0.5 ohm rd=2.025 ohm rg=1.7 ohm rs=0.675 ohm ld= lg=0.094 nh ls= cds=0.100 pf rc=390 ohm crf=0.1 f gsfwd= gsrev= gdfwd= gdrev= r1= r2= vbi=0.95 vbr= vjr= is= ir= imax= xti= eg= n= fnc=1 mhz r=0.08 p=0.2 c=0.1 taumdl=no wvgfwd= wbvgs= wbvgd= wbvds= wldsmax= wpmax= allparams= advanced_curtice2_model mesfetm1 gate source inside package port g num=1 c c1 c=0.143 pf port s1 num=2 source drain port s2 num=4 port d num=3 l l6 l=0.205 nh r=0.001 c c2 c=0.115 pf l l7 l=0.778 nh r=0.001 msub tlinp tl4 z=z1 ohm l=15 mil k=1 tlinp tl10 z=z1 ohm l=15 mil k=1 tlinp tl3 z=z2 ohm l=25 mil k=k tlinp tl9 z=z2 ohm l=10.0 mil k=k var var1 k=5 z2=85 z1=30 var egn tlinp tl1 z=z2/2 ohm l=20 0 mil k=k tlinp tl2 z=z2/2 ohm l=20 0 mil k=k tlinp tl8 z=z1 ohm l=15.0 mil k=1 tlinp tl7 z=z2/2 ohm l=5.0 mil k=k tlinp tl5 z=z2 ohm l=26.0 mil k=k tlinp tl6 z=z1 ohm l=15.0 mil k=1 l l1 l=0.621 nh r=0.001 l l4 l=0.238 nh r=0.001 gaasfet fet1 mode1=mesfetm1 mode=nonlinear msub msub1 h=25.0 mil er=9.6 mur=1 cond=1.0e+50 hu=3.9e+034 mil t=0.15 mil tand=0 rough=0 mil atf-55143 ads package model
17 figure 35. adding vias to the atf-55143 non-linear model for comparison to measured s and noise parameters. designing with s and noise parameters and the non-lin - ear model the non ? linear model describing the atf ? 55143 in ? cludes both the die and associated package model. the package model includes the efect of the pins but does not include the effect of the additional source inductance associated with grounding the source leads through the printed circuit board. the device s and noise parameters do include the effect of 0.020 inch thickness printed circuit board vias. when comparing simulation results between the measured s parameters and the simulated non ? linear model, be sure to include the efect of the printed circuit board to get an accurate comparison. this is shown schematically in figure 35. for further information the information presented here is an introduction to the use of the atf ? 55143 enhancement mode phemt. more detailed application circuit information is available from avago technologies. consult the web page or your local avago technologies sales representative. drain via2 v1 d=20.0 mil h=25.0 mil t=0.15 mil rho=1.0 w=40.0 mil via2 v2 d=20.0 mil h=25.0 mil t=0.15 mil rho=1.0 w=40.0 mil via2 v4 d=20.0 mil h=25.0 mil t=0.15 mil rho=1.0 w=40.0 mil source gate source a t f - 5 5 1 4 3 msub msub1 h=25.0 mil er=9.6 mur=1 cond=1.0e+50 hu=3.9e+034 mil t=0.15 mil tand=0 rough=0 mil msub via2 v3 d=20.0 mil h=25.0 mil t=0.15 mil rho=1.0 w=40.0 mil
18 noise parameter applications information f min values at 2 ghz and higher are based on measure ? ments while the f mins below 2 ghz have been extrapo ? lated. the f min values are based on a set of 16 noise fgure measurements made at 16 diferent impedances using an atn np5 test system. from these measure ? ments, a true f min is calculated. f min represents the true minimum noise fgure of the device when the device is presented with an impedance matching network that transforms the source impedance, typically 50?, to an impedance represented by the refection coefcient o . the designer must design a matching network that will present o to the device with minimal associated circuit losses. the noise fgure of the completed amplifer is equal to the noise fgure of the device plus the losses of the matching network preceding the device. the noise fgure of the device is equal to f min only when the device is presented with o . if the refection coefcient of the matching network is other than o , then the noise fg ? ure of the device will be greater than f min based on the following equation. nf = f min + 4 r n | s C o | 2 zo (|1 + o | 2 )(1 ? | s | 2 ) where r n /z o is the normalized noise resistance, o is the optimum refection coefcient required to produce f min and s is the reflection coefficient of the source impedance actually presented to the device. the losses of the matching networks are non ? zero and they will also add to the noise figure of the device creating a higher amplifer noise fgure. the losses of the matching networks are related to the q of the components and associated printed circuit board loss. o is typically fairly low at higher frequencies and increases as frequency is lowered. larger gate width devices will typically have a lower o as compared to narrower gate width devices. typically for fets, the higher o usually infers that an impedance much higher than 50? is required for the device to produce f min . at vhf frequencies and even lower l band frequencies, the required impedance can be in the vicinity of several thousand ohms. matching to such a high impedance requires very hi ? q compo ? nents in order to minimize circuit losses. as an example at 900 mhz, when airwound coils (q > 100) are used for matching networks, the loss can still be up to 0.25 db which will add directly to the noise fgure of the device. using multilayer molded inductors with qs in the 30 to 50 range results in additional loss over the airwound coil. losses as high as 0.5 db or greater add to the typi ? cal 0.15 db f min of the device creating an amplifer noise fgure of nearly 0.65 db. a discussion concerning cal ? culated and measured circuit losses and their efect on amplifer noise fgure is covered in avago technologies application 1085.
19 ordering information part number no. of devices container atf ?55143? tr1g 3000 7 reel atf ?55143? tr2g 10000 13reel atf ?55143? blkg 100 antistatic bag dimensions symbol min (mm) max (mm) e 1.15 1.35 d 1.85 2.25 he 1.80 2.40 a 0.80 1.10 a2 0.80 1.00 a1 0.00 0.10 b 0.25 0.40 b1 0.55 0.70 c 0.10 0.20 l 0.10 0.46 note: 1. all dimensions are in mm. 2. dimensions are inclusive of plating. 3. dimensions are exclusive of mold fash and metal burr. 4. all specifcations comply with eiaj sc70. 5. die is facing up for mold and facing down for trim/form, i.e., reverse trim/form. 6. package surface to be mirror fnish. package dimensions outline 43 (sot-343/sc70 lead)
20 device orientation recommended pcb pad layout for avago's sc70 4l/sot-343 products (dimensions in inches/mm) u s e r f e e d d i r e c t i o n c o v e r t a p e c a r r i e r t a p e r e e l e n d v i e w 8 m m 4 m m t o p v i e w 5 f x 5 f x 5 f x 5 f x
tape dimensions for outline 4t tape dimensions and product orientation description symbol size (mm) size (inches) cavity length width depth pitch bottom hole diameter a o b o k o p d 1 2.40 0.10 2.40 0.10 1.20 0.10 4.00 0.10 1.00 + 0.25 0.094 0.004 0.094 0.004 0.047 0.004 0.157 0.004 0.039 + 0.010 perforlation diameter pitch position d p o e 1.50 + 0.10 4.00 0.10 1.75 0.10 0.061 + 0.002 0.157 0.004 0.069 0.004 carrier tape width thickness w t 1 8.00 + 0.30 ? 0.10 0.254 0.02 0.315 + 0.012 0.0100 0.0008 cover tape width thickness c t t 5.40 0.010 0.062 0.001 0.205 + 0.004 0.0025 0.0004 distance cavity to perforation (width direction) cavity to perforation (length direction) f p 2 3.50 0.05 2.00 0.05 0.138 0.002 0.079 0.002 for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. data subject to change. copyright ? 2005-2008 avago technologies. all rights reserved. obsoletes 5989-3750en av02-0923en - august 26, 2008

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