View IRSF3010STRR_6699156.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

features: n extremely rugged for harsh operating environments n over temperature protection n over current protection n active drain to source clamp n esd protection n compatible with standard power mosfet n low operating input current n monolithic construction n dual set/reset threshold input irsf3010 available packages irsf3010 - block diagram v ds(clamp) 50 v r ds(on) 80 m w w w w w i ds(sd) 11 a t j(sd) 155 c e as 400 mj source drain applications: n dc motor drive n solenoid driver fully protected power mosfet switch pin assignment pin 1 - input pin 2 - drain pin 3 - source tab - drain provisional data sheet no.pd-6.0027a 3 2 1 ta b irsf3010 irsf3010s rating summary: general description: the irsf3010 is a three terminal monolithic smart power mosfet with built in short cir- cuit, over-temperature, esd and over-volt age pro- tections. the on chip protection circuit latches off the power mosfet in case the drain current ex- ceeds 14a (typical) or the junction tempera ture ex- ceeds 165c (typical) and keeps it off until the input is driven low. the drain to source voltage is actively clamped at 55v (typical), prior to the avalanche of power mosfet, thus improving its performance during turn off with inductive loads. the input current requirements are very low (300ua) which makes the irsf3010 compat ible with most existing designs based on standard power mosfets.
irsf3010 2 absolute maximum ratings absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. (t c = 25c unless otherwise specified.) symbol parameter definition min. max. t est conditions v ds, max continuous drain to source voltage 50 v in, max continuous input voltage -0.3 10 i ds continuous drain current self limited p d power dissipation 40 w t c 25c linear derating factor for tc > 25 c 0.33 w/c e as unclamped single pulse inductive energy 400 mj v esd1 electrostatic discharge voltage (human body model) 4000 1000pf. 1.5k w v esd2 (machine model) 1000 200pf, 0 w t jop junction temperature -55 self-limited t stg storage temperature -55 175 t l lead temperature (soldering, 10 seconds) 300 thermal characteristics units v v o c symbol parameter definition min. typ. max. units t est conditions v ds,clamp drain to source clamp voltage 50 54 i ds = 10ma 5662 i ds = 11a, t p = 700 m s r ds(on) drain to source on resistance 70 80 v in = 5v, i ds = 4a 85 v in = 4v, i ds = 4a 53 v in = 10v, i ds = 4a i dss drain to source leakage current 10 v ds = 12v, v in = 0v 100 v ds = 50v, v in = 0v 10 250 v ds =40v,v in =0v,t c =150 o c v th input threshold voltage 1.5 2.0 2.5 v v ds = 5v, i ds = 1ma i i, on input supply current (normal operation) 0.25 0.6 v in = 5v 0.35 0.85 v in = 10v i i, off input supply current (protection mode) 0.5 1.0 v in = 5v 0.61.2 v in = 10v v in, clamp input clamp voltage 10 10.8 i in = 10ma v sd body-drain diode forward drop 1.2 1.5 i ds = -17a, r in = 1k w static electrical characteristics (t c = 25c unless otherwise specified.) v m w m a ma v symbol parameter definition min. typ. max. units test conditions r q jc thermal resistance, junction to case 3.0 c/w r q ja thermal resistance, junction to ambient 60 c/w
irsf3010 3 notes: 1. e as is tested with a constant current source of 11a applied for 700 m s with v in = ov and starting t j = 25 o c. 2. input current must be limited to less than 5ma with a 1k w resistor in series with the input when the body-drain diode is forward biased. symbol parameter definition min. typ. max. units test conditions v ds,clamp temperature coefficient of drain to source clamp voltage 18.2 v th temperature coefficient of input threshold voltage -3.2 v in,clamp temperature coefficient of input clamp voltage 7.0 i ds(sd) temperature coefficient of over-current shutdown threshold -21.5 ma/ o c i ds = 10ma v ds = 5v, i ds = 1ma i in = 10ma v in = 5v mv/ o c temperature coefficients of electrical characteristics: (please see figures 3 through 14 for more data on thermal characteristics of other electrical parameters. symbol parameter definition min. typ. max. units test conditions t don turn-on delay time 425 650 v in = 5v 150 v in = 10v t r rise time 2000 4000 v in = 5v 425 v in = 10v t doff turn-off delay time 650 1000 v in = 5v 850 v in = 10v t f fall time 500 800 v in = 5v 450 v in = 10v switching electrical characteristics: (v cc = 14v, resistive load r l = 5 w , t c = 25 c.) please refer to figure 15 for switching time definitions. ns symbol parameter definition min. typ. max. units test conditions i ds(sd) over-current shutdown threshold 11 14 17 a vin = 5v t j(sd) over temperature shutdown threshold 155 165 c v in = 5v, ids = 2a v protect minimum input voltage for over-temp fxn. 3 v t iresp over current response time 2 see figure 16 for definition t iblank over current blanking time 3 see figure 16 for definition i peak peak short circuit current 20 a see figure 16 for definition v reset protection reset voltage 1.3 v t reset protection reset time 7 see figure 17 for definition t tresp overtemperature response time 12 see figure 18 for definition m s m s protection characteristics: (t c = 25 c unless otherwise specified.)
irsf3010 4 30 40 50 60 70 80 90 100 110 120 -50 -25 0 25 50 75 100 125 150 temperature (c) rds(on) (mohm) vin = 10v vin = 5v ids = 4a 40 50 60 70 80 90 100 110 120 24681012141618 ids (a) rds(on) (mohm) vin = 4v vin = 5v vin = 7v vin = 10v t = 25c fig. 3 - on resistance vs drain to source current fig. 4 - on resistance vs. temperature 13 14 15 16 17 4 5678910 input voltage (volts) shut down current (a) t = 25c fig. 5 - over-current shutdown threshold vs input voltage 10 11 12 13 14 15 16 -50 -25 0 25 50 75 100 125 150 temperature (c) shut down current (a) vin = 5v fig. 6 - over-current shutdown threshold vs temperature 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 01 23 45 67 891011 input voltage (volts) input current (ma) iin,off t=25c iin,on rating 0 50 0 10 00 15 00 20 00 25 00 30 00 35 00 0 255075100125150 starting junction temperature (c) single pulse energy to failure (mj) ids = 12a ids = 8a vdd = 25v figure 7 - input current vs. input voltage fig. 8 - unclamped single pulse inductive energy to failure vs starting junction temperature
irsf3010 5 fig. 9 - turn on characteristics vs input voltage fig. 10 - turn on characteristics vs temperature fig. 11 - turn off characteristics vs input voltage fig. 12 - turn off characteristics vs temperature fig. 13 - source-drain diode forward voltage fig. 14 - transient thermal impedance, junction to case 0.00 0.50 1.00 1.50 2.00 2.50 34567891011 i nput voltage (vo lt s) r ise t ime, on delay ( s) o n dela y r ise tim e t = 25 c 0. 3 0. 4 0. 5 0. 6 0. 7 0. 8 0. 9 34567891011 i nput voltage (vo lt s) f all time, off delay ( s) o ff dela y f all tim e t = 25 c 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -50 -25 0 25 50 75 100 125 150 t emperature (c ) f all time, off delay ( s) o ff dela y f all tim e v in = 5 v 1 10 10 0 0. 6 0. 8 1 1. 2 1. 4 1. 6 1. 8 2 2. 2 s ource to drain voltage (volt s) r everse drain current (a ) t = 25 c t = 150 c 0.00 0.50 1.00 1.50 2.00 2.50 -50 -25 0 25 50 75 100 125 150 t emperature (c ) r ise time, on delay ( s) o n dela y r ise tim e v in = 5 v 0.01 0.1 1 10 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 p ulse duration tp ( s) t her mal r esponse (c/w ) 0 .5 0.1 0 d ut y f acto r = d f= 0 .50 0 .20 0 .10 0 .05 0 .02 0 .01 0 .00
irsf3010 6 50% 90% 10% v ds v in t t t don t r t doff t f i ds v in t t i peak t i blank t i resp short applied before turn-on short applied after turn-on 5v vcc = 14v = 0 r l i ds v in t t 5v vcc = 14v = 1 mh r l i ds(sd) t < reset t t > reset t i ds v in t t t t resp 5v vcc = 14v = 10 r l w + 5c t j = t jsd fig. 15 - definition of switching times. fig. 16 - definition of i peak , t iblank , t iresp fig. 17 - definition of t reset fig. 18 - definition of t tresp
irsf3010 7 case outline ? to-220ab (irsf3010) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982 2. controlling dimension: inch 3. dimensions shown are in millimeters (inches) 4. conforms to jedec outline to-251aa 5. dimension does not include solder dip. solder dip max. +0.16 (.006) lead assignments 1. gate 2. drain 3. source 4. drain
irsf3010 8 case outline ? smd-220 (irsf3010s)
irsf3010 9 tape and reel ? smd-220 (irsf3010s)
irsf3010 10 application information introduction protected monolithic power mosfets offer simple, cost effective solutions in applications where extreme operating conditions can occur. the margin between the operating conditions and the absolute maxi- mum values can be narrowed result ing in better utilization of the device and lower cost. esd protec- tion also reduces the off-circuit failures during han- dling and assembly. general description the irsf3010 is a fully protected monolithic n-chan- nel, logic level power mosfet with 80m w (max) on-resistance. the built-in protections include over- current, over-temperature, esd and active over-volt- age protections. the over-current and over-temperature protection makes the irsf3010 indestructible at any load condi- tions in switching or in linear applications. the built-in esd protection minimizes the risk of esd damage when the device is off-circuit. the irsf3010 is fully characterized for avalanche operation and can be used for fast de-energization of inductive loads. the irsf3010 intelligent power switch that is available in the to220 package offers an easy up- grade from non-protected devices. block diagram the zener diode between the input and the source (see figure 20) provides the esd protection for the input and also limits the applicable voltage to the in- put to 10v. the r-s flip-flop memorizes the occurrence of an er- ror condition and controls the q2 and q3 switches. the flip-flop can be cleared by holding the input low for the specified minimum duration. comp1 and comp2 comparators are used to com- pare the over-current and over-temperature signals with the built-in reference. either comparator can re- set the fault flip-flop and turn q1 off. during fault con- dition, q2 disconnects gate of q1 from the input, q3 shorts the gate and source of q1, resulting in rapid turn-off of q1. the zener diode between the gate and drain of q1 turns q1 on, when the drain to source voltage exceeds 55v. switching characteristics in the irsf3010 the control logic and the protection circuits are powered from the input pin. when posi- tive voltage appears at the input pin the r-s flip-flop turns q2 on and connects the gate of the main device to the input. the turn-on speed is limited by the channel resistance of q2 and the gate charge requirements of q1. the typical switching waveforms at 5v input voltage are shown in figure 21. using higher input voltage will improve the turn-on time but it does not affect the turn- off switching speed. fig.20 block diagram fig.21 waveforms switching clamped indictive load using 5v input voltage input voltage 5v/ drain current: 1a/div. drain voltage 5v/ time: 1 m sv/div.
irsf3010 11 the typical waveforms at 7v input voltage are shown in figure 22. in typical switching applications, below 40khz, the difference in switching losses between the irsf3010 and the same size standard mosfet is negligible. fig. 22 switching waveforms with 7v input voltage the typical waveforms at over-current shut-down are shown in figure 23. after turn-on the current in the inductor at the drain starts ramping up. at about 15a the over-current protection shuts down the de vice. over-temperature protection figure 24 illustrates the operation of the over-tempera- ture protection. the irsf3010 switches a 1 w resis- tive load to a 12v power supply. when the thermal balance is established the junction temperature is lim- ited on pulse by pulse basis. fig. 24 over-temperature shut-down fig. 23 waveforms at over-current shut-down over-voltage protection when the drain to source voltage exceeds 55v the zener diode between gate and drain turns the irsf3010 on, before the breakdown voltage of the drain-source diode is reached. this greatly enhances the energy the device can withstand safely during turn- off of inductive loads compared to avalanche break- down. thus the device can be used for fast de- energization of inductive loads. the absorbed energy is limited only by the maximum junction temperature. over-current protection when the drain current exceeds the preset limit the protection circuit resets the internal flip-flop and turns q1 off. the normal operation can be restored by hold- ing the input voltage below the specified threshold level (approx. 1.3v) for the specified minimum t reset time. input voltage 10v/div. drain voltage 5v/div. drain current: 2a/div. time: 10 m sv/div. time: 10 m sv/div. drain current: 2a/div. input voltage 5v/div. drain voltage 5v/div. input voltage 5v/ drain voltage 5v/ drain current: 1a/ time: 1 m sv/div. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: 171 (k&h bldg.), 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 12/96

▲Up To Search▲

Price & Availability of IRSF3010STRR

	To Download IRSF3010STRR Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .