notes through are on page 8 www.irf.com 1 09/27/01 IRFP90N20D smps mosfet hexfet ? power mosfet v dss r ds(on) max i d 200v 0.023 ? 94a parameter max. units i d @ t c = 25 c continuous drain current, v gs @ 10v 94 i d @ t c = 100 c continuous drain current, v gs @ 10v 66 a i dm pulsed drain current 380 p d @t c = 25 c power dissipation 580 w linear derating factor 3.8 w/ c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt 6.7 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torqe, 6-32 or m3 screw 10 lbf in (1.1n m) absolute maximum ratings high frequency dc-dc converters benefits applications low gate-to-drain charge to reduce switching losses fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) fully characterized avalanche voltage and current to-247ac pd - 94301a thermal resistance parameter typ. max. units r jc junction-to-case ??? 0.26 r cs case-to-sink, flat, greased surface 0.24 ??? c/w r ja junction-to-ambient ??? 40
IRFP90N20D 2 www.irf.com parameter min. typ. max. units conditions g fs forward transconductance 39 ??? ??? sv ds = 50v, i d = 56a q g total gate charge ??? 180 270 i d = 56a q gs gate-to-source charge ??? 45 67 nc v ds = 160v q gd gate-to-drain ("miller") charge ??? 87 130 v gs = 10v, t d(on) turn-on delay time ??? 23 ??? v dd = 100v t r rise time ??? 160 ??? i d = 56a t d(off) turn-off delay time ??? 43 ??? r g = 1.2 ? t f fall time ??? 79 ??? v gs = 10v c iss input capacitance ??? 6040 ??? v gs = 0v c oss output capacitance ??? 1070 ??? v ds = 25v c rss reverse transfer capacitance ??? 170 ??? pf ? = 1.0mhz c oss output capacitance ??? 8350 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 420 ??? v gs = 0v, v ds = 160v, ? = 1.0mhz c oss eff. effective output capacitance ??? 870 ??? v gs = 0v, v ds = 0v to 160v dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ??? 1010 mj i ar avalanche current ??? 56 a e ar repetitive avalanche energy ??? 58 mj avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.5 v t j = 25 c, i s = 56a, v gs = 0v t rr reverse recovery time ??? 230 340 ns t j = 25 c, i f = 56a q rr reverse recoverycharge ??? 1.9 2.8 c di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) diode characteristics 94 380 a static @ t j = 25 c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 200 ??? ??? vv gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.24 ??? v/ c reference to 25 c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.023 ? v gs = 10v, i d = 56a v gs(th) gate threshold voltage 3.0 ??? 5.0 v v ds = v gs , i d = 250a ??? ??? 25 a v ds = 200v, v gs = 0v ??? ??? 250 v ds = 160v, v gs = 0v, t j = 150 c gate-to-source forward leakage ??? ??? 100 v gs = 30v gate-to-source reverse leakage ??? ??? -100 na v gs = -30v i gss i dss drain-to-source leakage current
IRFP90N20D www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , drain-to-source current (a) 5.0v 20s pulse width tj = 25 c vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , drain-to-source current (a) 5.0v 20s pulse width tj = 175 c vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 5.0v 5.0 7.0 9.0 11.0 13.0 15.0 v gs , gate-to-source voltage (v) 1.00 10.00 100.00 1000.00 i d , drain-to-source current ( ) t j = 25 c t j = 175 c v ds = 15v 20s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t , junction temperature ( c ) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 94a
IRFP90N20D 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 1000000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 40 80 120 160 200 0 2 5 7 10 12 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 56a v = 40v ds v = 100v ds v = 160v ds 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v sd , source-todrain voltage (v) 0.10 1.00 10.00 100.00 1000.00 i sd , reverse drain current (a) t j = 25 c t j = 175 c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 10000 i d , drain-to-source current (a) tc = 25 c tj = 175 c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
IRFP90N20D www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 175 0 20 40 60 80 100 t , case temperature ( c ) i , drain current (a) c d limited by package 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
IRFP90N20D 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 10 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 420 840 1260 1680 2100 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 23a 40a 56a
IRFP90N20D www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit r g v dd ? dv/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer *
IRFP90N20D 8 www.irf.com repetitive rating; pulse width limited by max. junction temperature. i sd 56a, di/dt 470a/s, v dd v (br)dss , t j 175 c notes: starting t j = 25 c, l = 0.64mh r g = 25 ? , i as = 56a. pulse width 300s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss calculated continuous current based on maximum allowable junction temperature. package limitation current is 90a. to - 247 package outline lead assignments notes: - d - 5.30 ( .209 ) 4.70 ( .185 ) 2.50 ( .089 ) 1.50 ( .059 ) 4 3x 0.80 ( .031 ) 0.40 ( .016 ) 2.60 ( .102 ) 2.20 ( .087 ) 3.40 ( .133 ) 3.00 ( .118 ) 3x 0.25 ( .010 ) m ca s 4.30 ( .170 ) 3.70 ( .145 ) - c - 2x 5.50 ( .217 ) 4.50 ( .177 ) 5.50 ( .217 ) 0.25 ( .010 ) 1.40 ( .056 ) 1.00 ( .039 ) 3.65 ( .143 ) 3.55 ( .140 ) d m m b - a - 15.90 ( .626 ) 15.30 ( .602 ) - b - 12 3 20.30 ( .800 ) 19.70 ( .775 ) 14.80 ( .583 ) 14.20 ( .559 ) 2.40 ( .094 ) 2.00 ( .079 ) 2x 2x 5.45 ( .215 ) 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline t o -24 7-a c . 1 - gate 2 - drain 3 - source 4 - drain dimensions are shown in millimeters (inches) data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir ? s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/01
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/
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