hbat-5400, 5402, 540b, 540c high performance schottky diode for transient suppression data sheet features ? ultra-low series resistance for higher current handling ? low capacitance ? low series resistance ? lead-free option available applications rf and computer designs that require circuit protection, high-speed switching, and voltage clamping. package lead code identi? cation (top view) description the hbat-540x series of schottky diodes, commonly referred to as clipping /clamping diodes, are optimal for circuit and waveshape preservation applications with high speed switching. low series resistance, r s , makes them ideal for protecting sensitive circuit elements against high current transients carried on data lines. with picosecond switching, the hbat-540x can respond to noise spikes with rise times as fast as 1 ns. low capaci- tance minimizes waveshape loss that causes signal deg- radation. series 2, c single 0, b 12 3 12 3
2 absolute maximum ratings, t a = 25oc symbol parameter unit absolute maximum [1] hbat-5400/-5402 hbat-540b/-540c i f dc forward current ma 220 430 i f- peak peak surge current (1s pulse) a 1.0 1.0 p t total power dissipation mw 250 825 p inv peak inverse voltage v 30 30 t j junction temperature c 150 150 t stg storage temperature c -65 to 150 -65 to 150 jc thermal resistance, junction to lead c/w 500 150 note: 1. operation in excess of any one of these conditions may result in permanent damage to the device. r s 0.08 pf spice model 2 nh linear and non-linear spice model [2] parameter unit value bv v 40 cjo pf 3.0 eg ev 0.55 ibv a 10e-4 is a 1.0e-7 n 1.0 rs 2.4 pb v 0.6 pt 2 m 0.5 spice parameters note: 2. to e? ectively model the packaged hbat-540x product, please refer to application note an1124. hbat-540x dc electrical speci? cations, t a = +25c [1] maximum minimum typical maximum part package forward breakdown typical series e? . carrier number marking lead voltage voltage capacitance resistance lifetime hbat- code [2] code con? guration package v f (mv) v br (v) c t (pf) r s () t (ps) -5400 v0 0 single sot-23 -540b b sot-323 (3-lead sc-70) -5402 2 sot-23 -540c v2 c series sot-323 (3-lead sc-70) 800 [3] 30 [4] 3.0 [5] 2.4 100 [6] notes: 1. t a = +25c, where t a is de? ned to be the temperature at the package pins where contact is made to the circuit board. 2. package marking code is laser marked. 3. i f = 100 ma; 100% tested 4. i r = 100 a; 100% tested 5. v f = 0; f =1 mhz 6. measured with karkauer method at 20 ma guaranteed by design.
3 typical performance figure 2. forward current vs. forward voltage at temperature for hbat-540b and hbat-540c. 0 0.1 0.3 0.2 0.5 0.4 0.6 i f ? forward current (ma) i f ? forward current (ma) v f ? forward voltage (v) figure 1. forward current vs. forward voltage at temperature for hbat-5400 and hbat-5402. 0.01 10 100 1 0.1 300 t a = +75c t a = +25c t a = ?25c t a = +75c t a = +25c t a = ?25c 0 100 300 200 500 400 600 0 140 120 100 8 0 60 40 20 160 figure 3. junction temperature vs. current as a function of heat sink temperature for hbat-5400 and hbat-5402. note: data is calculated from spice parameters. figure 5. total capacitance vs. reverse voltage. 0 5 10 20 c t ? total capacitance (pf) v r ? reverse voltage (v) 15 1.0 2.0 1.5 3.0 2.5 max. safe junction temp. t a = +75c t a = +25c t a = ?25c 0 50 150 100 200 250 t j ? junction temperature (c) i f ? forward current (ma) 0 140 120 100 8 0 60 40 20 160 max. safe junction temp. figure 4. junction temperature vs. current as a function of heat sink temperature for hbat-540b and hbat-540c. note: data is calculated from spice parameters. t j ? junction temperature (c) 0 0.2 0.6 0.4 1.0 0. 8 1.4 1.2 0.01 10 100 1 0.1 500 t a = +75c t a = +25c t a = ?25c v f ? forward voltage (v) v f ? forward voltage (v) note: "ab" represents package marking code. "c" represents date code. end view 8 mm 4 mm top view abc abc abc abc device orientation for outlines sot-23/323 user feed direction cover tape carrier tape reel
4 package dimensions outline sot-23 tape dimensions and product orientation for outline sot-23 9 max a 0 p p 0 d p 2 e f w d 1 ko 8 max b 0 13.5 max t1 description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a 0 b 0 k 0 p d 1 3.15 0.10 2.77 0.10 1.22 0.10 4.00 0.10 1.00 + 0.05 0.124 0.004 0.109 0.004 0.048 0.004 0.157 0.004 0.039 0.002 cavity diameter pitch position d p 0 e 1.50 + 0.10 4.00 0.10 1.75 0.10 0.059 + 0.004 0.157 0.004 0.069 0.004 perforation width thickness w t1 8.00 + 0.30 ? 0.10 0.229 0.013 0.315 + 0.012 ? 0.004 0.009 0.0005 carrier tape cavity to perforation (width direction) cavity to perforation (length direction) f p 2 3.50 0.05 2.00 0.05 0.138 0.002 0.079 0.002 distance between centerline recommended pcb pad layout for avagos sot-23 products 0.039 1 0.039 1 0.079 2.0 0.031 0.8 dimensions in inches mm 0.035 0.9 e b e2 e1 e1 c e xxx l d a a1 notes: xxx-package marking drawings are not to scale dimensions (mm) min. 0.79 0.000 0.30 0.08 2.73 1.15 0.89 1.78 0.45 2.10 0.45 max. 1.20 0.100 0.54 0.20 3.13 1.50 1.02 2.04 0.60 2.70 0.69 symbol a a1 b c d e1 e e1 e2 e l
5 package dimensions outline sot-323 (sc-70 3 lead) tape dimensions and product orientation for outline sot-323 (sc-70 3 lead) p p 0 p 2 f w c d 1 d e a 0 8 max. t 1 (carrier tape thickness) t t (cover tape thickness) 8 max. b 0 k 0 description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a 0 b 0 k 0 p d 1 2.40 0.10 2.40 0.10 1.20 0.10 4.00 0.10 1.00 + 0.25 0.094 0.004 0.094 0.004 0.047 0.004 0.157 0.004 0.039 + 0.010 cavity diameter pitch position d p 0 e 1.55 0.05 4.00 0.10 1.75 0.10 0.061 0.002 0.157 0.004 0.069 0.004 perforation width thickness w t 1 8.00 0.30 0.254 0.02 0.315 0.012 0.0100 0.0008 carrier tape cavity to perforation (width direction) cavity to perforation (length direction) f p 2 3.50 0.05 2.00 0.05 0.138 0.002 0.079 0.002 distance width tape thickness c t t 5.4 0.10 0.062 0.001 0.205 0.004 0.0025 0.00004 cover tape recommended pcb pad layout for avago?s sc70 3l/sot-323 products 0.026 0.039 0.079 0.022 dimensions in inches e b e1 e1 c e xxx l d a a1 notes: xxx-package marking drawings are not to scale dimensions (mm) min. 0.80 0.00 0.15 0.08 1.80 1.10 1.80 0.26 max. 1.00 0.10 0.40 0.25 2.25 1.40 2.40 0.46 symbol a a1 b c d e1 e e1 e l 1.30 typical 0.65 typical
6 applications information schottky diode fundamentals the hbat-540x series of clipping/clamping diodes are schottky devices. a schottky device is a rectifying, metal-semiconductor contact formed between a metal and an n-doped or a p-doped semiconductor. when a metal-semiconductor junction is formed, free electrons ? ow across the junction from the semiconductor and ? ll the free-energy states in the metal. this ? ow of electrons creates a depletion or potential across the junction. the di? erence in energy levels between semiconductor and metal is called a schottky barrier. p-doped, schottky-barrier diodes excel at applications requiring ultra low turn-on voltage (such as zero-biased rf detectors). but their very low, breakdown-voltage and high series-resistance make them unsuitable for the clipping and clamping applications involving high forward currents and high reverse voltages. therefore, this discussion will focus entirely on n-doped schottky diodes. under a forward bias (metal connected to positive in an n-doped schottky), or forward voltage, v f , there are many electrons with enough thermal energy to cross the barrier potential into the metal. once the applied bias exceeds the built-in potential of the junction, the forward current, i f , will increase rapidly as v f increases. when the schottky diode is reverse biased, the potential barrier for electrons becomes large; hence, there is a small probability that an electron will have su? - cient thermal energy to cross the junction. the reverse leakage current will be in the nanoampere to microam- pere range, depending upon the diode type, the reverse voltage, and the temperature. in contrast to a conventional p-n junction, current in the schottky diode is carried only by majority carriers. because no minority carrier charge storage e? ects are present, schottky diodes have carrier lifetimes of less than 100 ps and are extremely fast switching semi- conductors. schottky diodes are used as recti? ers at frequencies of 50 ghz and higher. another signi? cant di? erence between schottky and p-n diodes is the forward voltage drop. schottky diodes have a threshold of typically 0.3 v in comparison to that of 0.6 v in p-n junction diodes. see figure 6. figure 6. through the careful manipulation of the diameter of the schottky contact and the choice of metal deposited on the n-doped silicon, the important characteristics of the diode (junction capacitance, c j ; parasitic series resis- tance, r s ; breakdown voltage, v br ; and forward voltage, v f ,) can be optimized for speci? c applications. the hsms- 270x series and hbat-540x series of diodes are a case in point. both diodes have similar barrier heights; and this is indicated by corresponding values of saturation current, i s . yet, di? erent contact diameters and epitaxial- layer thickness result in very di? erent values of junction capacitance, c j and r s . this is portrayed by their spice parameters in table 1. table 1. hbat-540x and hsms-270x spice parameters. parameter hbat-540x hsms-270x bv 40 v 25 v cj0 3.0 pf 6.7 pf eg 0.55 ev 0.55 ev ibv 10e-4 a 10e-4 a is 1.0e-7 a 1.4e-7 a n 1.0 1.04 rs 2.4 0.65 pb 0.6 v 0.6 v pt 2 2 m 0.5 0.5 at low values of i f 1 ma, the forward voltages of the two diodes are nearly identical. however, as current rises above 10 ma, the lower series resistance of the hsms- 270x allows for a much lower forward voltage. this gives the hsms-270x a much higher current handling capabil- ity. the trade-o? is a higher value of junction capacitance. the forward voltage and current plots illustrate the di? er- ences in these two schottky diodes, as shown in figure 7. pn current 0.6 v + ? bias voltage pn junction capacitance metal n current 0.3 v + ? bias voltage schottky junction capacitance
7 figure 7. forward current vs. forward voltage at 25c. because the automatic, pick-and-place equipment used to assemble these products selects dice from adjacent sites on the wafer, the two diodes which go into the hbat- 5402 or hbat-540c (series pair) are closely matched without the added expense of testing and binning. current handling in clipping/clamping circuits the purpose of a clipping/clamping diode is to handle high currents, protecting delicate circuits downstream of the diode. current handling capacity is determined by two sets of characteristics, those of the chip or device itself and those of the package into which it is mounted. maximum reliability is obtained in a schottky diode when the steady state junction temperature is main- tained at or below 150c, although brief excursions to higher junction temperatures can be tolerated with no signi? cant impact upon mean-time-to-failure, mttf. in order to compute the junction temperature, equations (1) and (3) below must be simultaneously solved. i f ? forward current (ma) v f ? forward voltage (v) .01 10 1 .1 300 100 0 0.1 0.3 0.2 0.5 0.4 0.6 hsms-270x hbat-540x current limiting pull-down (or pull-up) long cross-site cable noisy data-spikes vs 0v voltage limited to vs + vd 0 v ? vd figure 8. two schottky diodes are used for clipping/clamping in a circuit. consider the circuit shown in figure 8, in which two schottky diodes are used to protect a circuit from noise spikes on a stream of digital data. the ability of the diodes to limit the voltage spikes is related to their ability to sink the associated current spikes. the importance of current handling capacity is shown in figure 9, where the forward voltage generated by a forward current is compared in two diodes. the ? rst is a conventional schottky diode of the type generally used in rf circuits, with an r s of 7.7. the second is a schottky diode of identical characteris- tics, save the r s of 1.0 . for the conventional diode, the relatively high value of r s causes the voltage across the diodes terminals to rise as current increases. the power dissipated in the diode heats the junction, causing r s to climb, giving rise to a runaway thermal condition. in the second diode with low r s , such heating does not take place and the voltage across the diode terminals is main- tained at a low limit even at high values of current. 0 0.1 0.2 0.3 0.5 0.4 v f ? forward voltage (v) i f ? forward current (ma) 0 3 2 1 6 4 5 r s = 7.7 r s = 1.0 i f = i s e C1 11 600 (v f C i f r s ) n t j ( 1 ) i s = i 0 e t j 298 2 n 1 t j 1 298 C 4060 ? (2) t j = v f i f jc + t a (3) ee i f en i s nen v f e r s eeene j nneee i nen2c nee jc = thermal resistance from junction to case (diode lead) = package + chip t a = ambient (diode lead) temperature equation (1) describes the forward v-i curve of a schottky diode. equation (2) provides the value for the diodes sat- uration current, which value is plugged into (1). equation (3) gives the value of junction temperature as a function of power dissipated in the diode and ambient (lead) temperature. figure 9. comparison of two diodes.
part number ordering information part number no. of devices container hbat-5400-blkg 100 antistatic bag hbat-5400-tr1g 3,000 7" reel hbat-5400-tr2g 10,000 13" reel hbat-5402-blkg 100 antistatic bag hbat-5402-tr1g 3,000 7" reel hbat-5402-tr2g 10,000 13" reel HBAT-540B-BLKG 100 antistatic bag hbat-540b-tr1g 3,000 7" reel hbat-540b-tr2g 10,000 13" reel hbat-540c-blkg 100 antistatic bag hbat-540c-tr1g 3,000 7" reel hbat-540c-tr2g 10,000 13" reel for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. data subject to change. copyright ? 2005-2010 avago technologies. all rights reserved. obsoletes 5989-4779en av02-1394en - january 7, 2010 the key factors in these equations are: r s , the series resis- tance of the diode where heat is generated under high current conditions; chip , the chip thermal resistance of the schottky die; and package , or the package thermal resistance. r s for the hbat-540x family of diodes is typically 2.4, other than the hsms-270x family, this is the lowest of any schottky diode available. chip thermal resistance is typically 40c/w; the thermal resistance of the iron-alloy- leadframe, sot-23 package is typically 460c/w; and the thermal resistance of the copper-leadframe, sot-323 package is typically 110c/w. the impact of package thermal resistance on the current handling capability of these diodes can be seen in figures 3 and 4. here the computed values of junction temperature vs. forward current are shown for three values of ambient tempera- ture. the sot-323 products, with their copper leadframes, can safely handle almost twice the current of the larger sot-23 diodes. note that the term ambient temperature refers to the temperature of the diodes leads, not the air around the circuit board. it can be seen that the hbat- 540b and hbat-540c products in the sot-323 package will safely withstand a steady-state forward current of 330 ma when the diodes terminals are maintained at 75c. for pulsed currents and transient current spikes of less than one microsecond in duration, the junction does not have time to reach thermal steady state. moreover, the diode junction may be taken to temperatures higher than 150c for short timeperiods without impacting device mttf. because of these factors, higher currents can be safely handled. the hbat-540x family has the second highest current handling capability of any avago diode, next to the hsms-270x series.
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