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?2001 fairchild semiconductor corporation www.fairchildsemi.com rev.1.0.1 features wide operating frequency range up to 150khz lowest cost smps solution lowest external components low start-up current (max:170ua) low operating current (max:15ma) internal high voltage sensefet built-in auto-restart circuit over voltage protection (auto restart mode) over load protection (auto restart mode) over current protection with latch mode internal thermal protection with latch mode pulse by pulse over current limiting internal burst mode controller for stand-by mode under voltage lockout with hysteresis external sync. terminal to-3p-5l 1. drain 2. gnd 3. v cc 4. feedback 5. sync. to-220f-5l 1 1 internal block diagram s _ qb r vref internal bias - + ron roff rsense vfb offset pwm uvlo 3 1 2 ifb idelay r 2.5r vref 4 vcc - + osc vpp=5.8/7.2v 5 vth=1v uvlo reset (vcc=9v) sq r - + vth=7.5v olp ovp - + vth=30v vcc ocl - + filter (130nsec) s q r tsd (tj=160 ) power-on reset (vcc=6.5v) - + - vref - + - + vcc vth=11/12v vfb vth=1v burst mode coltroller sync fs6s-series fs6s0965r/fs6s0965rt/FS6S1265R/fs6s15658r fairchild power switch(sps)
fs6s-series fs6s0965r/fs6s0965rt/FS6S1265R/fs6s15658r 2 absolute maximum ratings (ta=25 c, unless otherwise specified) characteristic symbol value unit fs6s0965rt/fs6s0965r drain to pkg breakdown voltage bv pkg fs6s0965rt 3500 v maximum drain voltage v d,max 650 v drain-gate voltage(r gs =1m ?) v dgr 650 v gate-source(gnd) voltage v gs 30 v drain current pulsed (1) i dm 36 adc continuous drain current (tc = 25 c) i d 9adc continuous drain current (tc = 100 c) i d 7.2 adc single pulsed avalanch current(energy (2) )i as (e as ) 25(950) a(mj) maximum supply voltage v cc,max 35 v input voltage range v fb -0.3 to v cc v v ss -0.3 to 10 v total power dissipation p d (watt h/s) fs6s0965rt 48 w fs6s0965r 170 derating fs6s0965rt 0.385 w / c fs6s0965r 1.33 operating junction temperature. t j +160 c operating ambient temperature. t a -25 to +85 c storage temperature range. t stg -55 to +150 c FS6S1265R maximum drain voltage v d,max 650 v drain-gate voltage(r gs =1m ?) v dgr 650 v gate-source(gnd) voltage v gs 30 v drain current pulsed (1) i dm 48 adc continuous drain current (tc = 25 c) i d 12 adc continuous drain current (tc = 100 c) i d 8.4 adc single pulsed avalanch current(energy (2) )i as (e as ) 30(950) a(mj) maximum supply voltage v cc,max 35 v input voltage range v fb -0.3 to v cc v v ss -0.3 to 10 v total power dissipation p d (watt h/s) 240 w derating 1.92 w / c operating junction temperature. t j +160 c operating ambient temperature. t a -25 to +85 c storage temperature range. t stg -55 to +150 c
fs6s-series fs6s0965r/fs6s0965rt/FS6S1265R/fs6s15658r 3 absolute maximum ratings (continued) (ta=25 c, unless otherwise specified) notes : 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 10mh, v dd =50v, r g = 27 ? , starting tj = 25 c 3. l = 13uh, starting tj = 25 c characteristic symbol value unit fs6s15658r maximum drain voltage v d,max 650 v drain-gate voltage(r gs =1m ?) v dgr 650 v gate-source(gnd) voltage v gs 30 v drain current pulsed (1) i dm 60 adc continuous drain current (tc = 25 c) i d 15 adc continuous drain current (tc = 100 c) i d 12.0 adc single pulsed avalanch current(energy (2) )i as (e as ) 37(--) a(mj) maximum supply voltage v cc,max 35 v input voltage range v fb -0.3 to v cc v v ss -0.3 to 10 v total power dissipation p d (watt h/s) 280 w derating 2.22 w / c operating junction temperature. t j +160 c operating ambient temperature. t a -25 to +85 c storage temperature range. t stg -55 to +150 c
fs6s-series fs6s0965r/fs6s0965rt/FS6S1265R/fs6s15658r 4 electrical characteristics (sfet part) (ta = 25 c unless otherwise specified) parameter symbol conditions min. typ. max. unit fs6s0965rt/fs6s0965r drain-source breakdown voltage bv dss v gs =0v, i d =50 a 650 - - v zero gate voltage drain current i dss v ds =max., rating, v gs =0v - - 200 a v ds =0.8max., rating, v gs =0v, t c =125 c - - 300 a static drain-source on resistance (1) r ds(on) v gs =10v, i d =4.5a - 1.1 1.2 ? forward transconductance (1) gfs v ds =50v, i d =4.5a - - - s input capacitance ciss v gs =0v, v ds =25v, f = 1mhz - 1300 - pf output capacitance coss - 135 - reverse transfer capacitance crss - 25 - turn on delay time td(on) v dd =0.5bv dss , i d =9.0a (mosfet switching time are essentially independent of operating temperature) -25- ns rise time tr - 75 - turn off delay time td(off) - 130 - fall time tf - 70 - total gate charge (gate-source+gate-drain) qg v gs =10v, i d =9.0a, v ds =0.5bv dss (mosfet switching time are essentially independent of operating temperature) -45- nc gate-source charge qgs - 8 - gate-drain (miller) charge qgd - 22 - FS6S1265R drain-source breakdown voltage bv dss v gs =0v, i d =50 a 650 - - v zero gate voltage drain current i dss v ds =max., rating, v gs =0v - - 200 a v ds =0.8max., rating, v gs =0v, t c =125 c - - 300 a static drain-source on resistance (1) r ds(on) v gs =10v, i d =4.5a - 0.7 0.9 ? forward transconductance (1) gfs v ds =50v, i d =4.5a - - - s input capacitance ciss v gs =0v, v ds =25v, f = 1mhz - 1820 - pf output capacitance coss - 185 - reverse transfer capacitance crss - 32 - turn on delay time td(on) v dd =0.5bv dss , i d =12.0a (mosfet switching time are essentially independent of operating temperature) -38- ns rise time tr - 120 - turn off delay time td(off) - 200 - fall time tf - 100 - total gate charge (gate-source+gate-drain) qg v gs =10v, i d =12.0a, v ds =0.5bv dss (mosfet switching time are essentially independent of operating temperature) -60- nc gate-source charge qgs - 10 - gate-drain (miller) charge qgd - 30 -
fs6s-series fs6s0965r/fs6s0965rt/FS6S1265R/fs6s15658r 5 electrical characteristics (sfet part; continued) (ta = 25 c unless otherwise specified) note: (1) pulse test : pulse width 300us, duty cycle 2 % (2) parameter symbol conditions min. typ. max. unit fs6s15658r drain-source breakdown voltage bv dss v gs =0v, i d =50 a 650 - - v zero gate voltage drain current i dss v ds =max., rating, v gs =0v - - 200 a v ds =0.8max., rating, v gs =0v, t c =125 c - - 300 a static drain-source on resistance (1) r ds(on) v gs =10v, i d =4.5a - 0.5 0.65 ? forward transconductance (1) gfs v ds =50v, i d =4.5a - - - s input capacitance ciss v gs =0v, v ds =25v, f = 1mhz - 2590 - pf output capacitance coss - 270 - reverse transfer capacitance crss - 50 - turn on delay time td(on) v dd =0.5bv dss , i d =15.0a (mosfet switching time are essentially independent of operating temperature) -50- ns rise time tr - 155 - turn off delay time td(off) - 270 - fall time tf - 125 - total gate charge (gate-source+gate-drain) qg v gs =10v, i d =15.0a, v ds =0.5bv dss (mosfet switching time are essentially independent of operating temperature) -90- nc gate-source charge qgs - 15 - gate-drain (miller) charge qgd - 45 - s 1 r --- - =
fs6s-series fs6s0965r/fs6s0965rt/FS6S1265R/fs6s15658r 6 electrical characteristics (control part) (v cc =16v, tamb = 25 c unless otherwise specified) note: 1. these parameters is the current flowing in the control ic. 2. these parameters, although guaranteed, are not 100% tested in production 3. these parameters, although guaranteed, are tested in eds(wafer test) process 4. these parameters are indicated inductor current. parameter symbol conditions min. typ. max. unit uvlo section start threshold voltage v start v fb =gnd 14 15 16 v stop threshold voltage v stop v fb =gnd 8 9 10 v oscillator section initial frequency f osc -222528khz voltage stability f stable 12v v cc 23v 0 1 3% temperature stability (note2) ? f osc -25 c a 85 c0 5 10 % maximum duty cycle d max -929598% minimum duty cycle d min ---0% feedback section feedback source current i fb v fb =gnd 0.7 0.9 1.1 ma shutdown feedback voltage v sd v fb 6.9v 6.9 7.5 8.1 v shutdown delay current i delay v fb =5v 1.6 2.0 2.4 a sync. & softstart section softstart voltage v ss v fb =2v 4.7 5.0 5.3 v softstart current i ss v ss =0v 0.8 1.0 1.2 ma sync high threshold voltage(note3) v synch v cc =16v , v fb =5v - 7.2 - v sync low threshold voltage(note3) v syncl v cc =16v , v fb =5v - 5.8 - v burst mode section burst mode low threshold voltage v burl v fb =0v 10.4 11.0 11.6 v burst mode high threshold voltage v burh v fb =0v 11.4 12.0 12.6 v burst mode enable feedback voltage v ben v cc =10.5v 0.7 1.0 1.3 v burst mode peak current limit(note4) i burpk v cc =10.5v , v fb =0v 0.6 0.85 1.1 a burst mode freqency f bur v cc =10.5v , v fb =0v 40 50 60 khz current limit(self-protection)section peak current limit (note4) i over fs6s0965r 5.28 6.0 6.72 a FS6S1265R 7.04 8.0 8.96 fs6s15658r 7.04 8.0 8.96 protection section over voltage protcetion v ovp v cc 27v 27 30 33 v over current latch voltage(note3) v ocl -0.91.01.1v thermal shutdown tempature(note2) tsd - 140 160 - c total device section start up current i start v fb =gnd, v cc =14v - 0.1 0.17 ma operating supply current(note1) i op v fb =gnd, v cc =16v -1015ma i op(min) v fb =gnd, v cc =12v i op(max) v fb =gnd, v cc =30v
fs6s-series fs6s0965r/fs6s0965rt/FS6S1265R/fs6s15658r 7 typical performance characteristics figure 1. start up current vs. temp. figure 2. operating supply current vs. temp. figure 3. start threshold voltage vs. temp. figure 4. stop threshold voltage vs. temp. figure 5. initial frequency vs. temp. figure 6. maximum duty vs. temp. is tart 0.00 0.03 0.06 0.09 0.12 0.15 -25 0 25 50 75 100 125 150 temp [ma] iop 9.0 9.2 9.4 9.6 9.8 10.0 10.2 -25 0 25 50 75 100 125 150 temp [ma] vstart 13.6 14.0 14.4 14.8 15.2 15.6 16.0 -25 0 25 50 75 100 125 150 temp [v] vstop 8.90 8.94 8.98 9.02 9.06 9.10 -25 0 25 50 75 100 125 150 temp [v] fosc 22.0 22.8 23.6 24.4 25.2 26.0 -25 0 25 50 75 100 125 150 temp [khz] dmax 94.0 94.4 94.8 95.2 95.6 96.0 -25 0 25 50 75 100 125 150 temp [%]
fs6s-series fs6s0965r/fs6s0965rt/FS6S1265R/fs6s15658r 8 typical performance characteristics (continued) figure 7. feedback offset voltage vs. temp. figure 8. feedback source current vs. temp. figure 9. shutdown delay current vs. temp. figure 10. shutdown feedback voltage vs. temp. figure 11. softstart voltage vs. temp. figure 12. over voltage protection vs. temp. voff 0.10 0.20 0.30 0.40 0.50 -25 0 25 50 75 100 125 150 temp [v] ifb 0.75 0.80 0.85 0.90 0.95 1.00 1.05 -25 0 25 50 75 100 125 150 temp [ma] idelay 1.70 1.78 1.86 1.94 2.02 2.10 -25 0 25 50 75 100 125 150 temp [ua] vsd 7.40 7.44 7.48 7.52 7.56 7.60 -25 0 25 50 75 100 125 150 temp [v] vss 4.90 4.94 4.98 5.02 5.06 5.10 -25 0 25 50 75 100 125 150 temp [v] vovp 29.0 29.4 29.8 30.2 30.6 31.0 -25 0 25 50 75 100 125 150 temp [v]
fs6s-series fs6s0965r/fs6s0965rt/FS6S1265R/fs6s15658r 9 typical performance characteristics (continued) figure 13. burst mode low voltage vs. temp. figure 14. burst mode high voltage vs. temp. figure 15. burst mode frequency vs. temp. figure 16. burst mode enable voltage vs. temp. figure 17. burst mode peak current vs. temp. figure 18. peak current limit vs. temp. vburl 10.8 10.9 11.0 11.1 11.2 -25 0 25 50 75 100 125 150 temp [v] vburh 11.7 11.8 11.9 12.0 12.1 12.2 12.3 -25 0 25 50 75 100 125 150 temp [v] fbur 43.0 45.0 47.0 49.0 51.0 53.0 -25 0 25 50 75 100 125 150 temp [khz] vben 0.00 0.40 0.80 1.20 1.60 -25 0 25 50 75 100 125 150 temp [v] ibur_pk 0.83 0.86 0.89 0.92 0.95 0.98 -25 0 25 50 75 100 125 150 temp [a] iover 5.70 5.80 5.90 6.00 6.10 6.20 -25 0 25 50 75 100 125 150 temp [a]
fs6s-series fs6s0965r/fs6s0965rt/FS6S1265R/fs6s15658r 10 package dimensions to-3p-5l
fs6s-series fs6s0965r/fs6s0965rt/FS6S1265R/fs6s15658r 11 package dimensions (continued) to-3p-5l (forming)
fs6s-series fs6s0965r/fs6s0965rt/FS6S1265R/fs6s15658r 12 package dimensions (continued) to-220f-5l
fs6s-series fs6s0965r/fs6s0965rt/FS6S1265R/fs6s15658r 13 package dimensions (continued) to-220f-5l (forming)
fs6s-series fs6s0965r/fs6s0965rt/FS6S1265R/fs6s15658r 14 top mark and pinout information notes ; (1) f ; fairchild semiconductor (2) 6s0965r, 6s1265r, 6s15658r ; device marking name (3) s: plant code (sps: s) (4) xx: patweek based on fairchild semiconductor work month calender (5) yy: last two digit of calender year device marking fs6s0965r 6s0965r fs6s0965rt FS6S1265R 6s1265r fs6s15658r 6s15658r s s s sx x x xx x x xy y y yy y y y m m m ma a a ar r r rk k k ki i i in n n ng g g g f f f f pin no. symbol description 1 drain sensefet drain 2 gnd ground (source) 3v cc control part supply input 4 f/b pwm non inverting input 5 s/s soft start & external sync. 1
fs6s-series fs6s0965r/fs6s0965rt/FS6S1265R/fs6s15658r 15 ordering information tu : non forming type ydtu : forming type product number package marking code bvdss rds(on) fs6s0965r-tu to-3p-5l 6s0965r 650v 1.1 ? fs6s0965r-ydtu to-3p-5l(forming) fs6s0965rt-tu to-220f-5l 6s0965r 650v 1.1 ? fs6s0965rt-ydtu to-220f-5l(forming) FS6S1265R-tu to-3p-5l 6s1265r 650v 0.7 ? FS6S1265R-ydtu to-3p-5l(forming) fs6s15658r-tu to-3p-5l 6s15658r 650v 0.5 ? fs6s15658r-ydtu to-3p-5l(forming)
fs6s-series fs6s0965r/fs6s0965rt/FS6S1265R/fs6s15658r 2/5/01 0.0m 001 ? 2001 fairchild semiconductor corporation life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others.

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