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tc1014 tc1015 tc1185 tc1014/tc1015/tc1185-3 1/04/01 evaluation kit available ? 2001 microchip technology inc. ds21335a features extremely low supply current (50 a, typ.) very low dropout voltage 50ma, 100ma, and 150ma output (tc1014, tc1015, and tc1185, respectively) high output voltage accuracy standard or custom output voltages power-saving shutdown mode reference bypass input for ultra low-noise operation over-current and over-temperature protection space-saving 5-pin sot-23a package pin compatible upgrades for bipolar regulators applications battery operated systems portable computers medical instruments instrumentation cellular / gsm / phs phones linear post-regulator for smps pagers 50ma, 100ma, 150ma cmos ldos with shutdown and reference bypass general description the tc1014, tc1015, and tc1185 are high accuracy (typically 0.5%) cmos upgrades for older (bipolar) low drop- out regulators such as the lp2980. designed specifically for battery-operated systems, the devices?cmos construction eliminates wasted ground current, significantly extending bat- tery life. total supply current is typically 50 a at full load (20 to 60 times lower than in bipolar regulators!). key features for the devices include ultra low-noise opera- tion (plus optional bypass input), fast response to step changes in load, and very low dropout voltage, typically 85mv (tc1014), 180mv (tc1015), and 270mv (tc1185) at full load. supply current is reduced to 0.5 a (max) and v out falls to zero when the shutdown input is low. the devices also incorporate both over-temperature and over-current protection. the tc1014, tc1015, and tc1185 are stable with an output capacitor of only 1 f and have a maximum output current of 50ma, 100ma, and 150ma, respectively. for higher output versions, see the tc1107, tc1108, and tc1173 (i out = 300 ma) data sheets. pin configuration note: *5-pin sot-23a is equivalent to eiaj sc-74a typical application 1 f 470pf reference bypass cap (optional) shutdown control (from power control logic) tc1014 tc1015 tc1185 v in 1 2 34 5 v in v out bypass shdn gnd v out tc1014 tc1015 tc1185 (5-pin sot-23a*) 1 3 4 5 2 shdn bypass gnd v out v in top view ordering information part junction number package temp. range tc1014-xxvct 5-pin sot-23a* ?40 c to +125 c tc1015-xxvct 5-pin sot-23a* ?40 c to +125 c tc1185-xxvct 5-pin sot-23a* ?40 c to +125 c tc1015ev evaluation kit for cmos ldo family note: *5-pin sot-23a is equivalent to eiaj sc-74a. available output voltages: 1.8, 2.5, 2.7, 2.8, 2.85, 3.0, 3.3, 3.6, 4.0, 5.0 xx indicates ouput voltages other output voltages are available. please contact microchip technologies for details.
tc1014 tc1015 tc1185 2 tc1014/tc1015/tc1185-3 01/04/01 50ma, 100ma, 150ma cmos ldos with shutdown and reference bypass ? 2001 microchip technology inc. ds21335a electrical characteristics: v in = v r + 1v, i l = 100 a, c l = 3.3 f, shdn > v ih , t a = 25 c, unless otherwise noted. boldface type specifications apply for junction temperatures of ?40 c to +125 c. symbol parameter test conditions min typ max units v in input operating voltage note 1 2.7 6.0 v i out max maximum output current tc1014 50 ma tc1015 100 tc1185 150 v out output voltage note 2 v r ?2.5% v r 0.5% v r + 2.5% v tcv out v out temperature coefficient note 3 20 ppm/ c ?0 ? v out / ? v in line regulation (v r + 1v) < v in < 6v 0.05 0.35 % ? v out /v out load regulation tc1014;tc1015 i l = 0.1ma to i out max 0.5 2 % tc1185 i l = 0.1ma to i out max 0.5 3 note 4 v in ?v out dropout voltage i l = 100 a2mv i l = 20ma 65 i l = 50ma 85 120 tc1015; tc1185 i l = 100ma 180 250 tc1185 i l = 150ma 270 400 note 5 i in supply current (note 8) shdn = v ih , i l = 0 50 80 a i insd shutdown supply current shdn = 0v 0.05 0.5 a psrr power supply rejection ratio f re 1khz 64 db i out sc output short circuit current v out = 0v 300 450 ma ? v out / ? p d thermal regulation notes 6, 7 0.04 v/w t sd thermal shutdown die temperature 160 c ? t sd thermal shutdown hysteresis 10 c en output noise i l = i out max , f = 10khz 600 nv/ hz 470pf from bypass to gnd shdn input v ih shdn input high threshold v in = 2.5v to 6.5v 45 %v in v il shdn input low threshold v in = 2.5v to 6.5v 15 %v in notes: 1. the minimum v in has to meet two conditions: v in 2.7v and v in v r + v dropout . 2. v r is the regulator output voltage setting. for example: v r = 1.8v, 2.5v, 2.7v, 2.8v, 2.85v, 3.0v, 3.3v, 3.6v, 4.0v, 5.0v. 3. tcv out = (v out max v out min ) x 10 6 v out x ? t 4. regulation is measured at a constant junction temperature using low duty cycle pulse testing. load regulation is tested o ver a load range from 1.0ma to the maximum specified output current. changes in output voltage due to heating effects are covered by the thermal regulatio n specification. 5. dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1v differential. 6. thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, e xcluding load or line regulation effects. specifications are for a current pulse equal to i lmax at v in = 6v for t = 10msec. 7. the maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature an d the thermal resistance from junction-to-air (i.e. t a , t j , ja ). exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. please see thermal considerations section of this data sheet for more details. 8. apply for junction temperatures of ?0 c to +85 c. absolute maximum ratings* input voltage .............................................................. 6.5v output voltage .................................. (?0.3) to (v in + 0.3) power dissipation .................................. internally limited operating temperature .................... ?40 c < t j < 125 c storage temperature ............................ ?65 c to +150 c maximum voltage on any pin .......... v in + 0.3v to ?0.3v lead temperature (soldering, 10 sec.) ................ +260 c *stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability.
tc1014 tc1015 tc1185 3 tc1014/tc1015/tc1185-3 01/04/01 50ma, 100ma, 150ma cmos ldos with shutdown and reference bypass ? 2001 microchip technology inc. ds21335a 1 f 470pf reference bypass cap (optional) shutdown control (to cmos logic or tie to v in if unused) tc1014 tc1015 tc1185 v in battery v out bypass shdn gnd v out 1 f pin no. 1v in unregulated supply input. 2 gnd ground terminal. 3 shdn shutdown control input. the regulator is fully enabled when a logic high is applied to this input. the regulator enters shutdown when a logic low is applied to this input.during shutdown, output voltage falls to zero, and supply current is reduced to 0.5 a (max). 4 bypass reference bypass input. connecting a 470pf to this input further reduces output noise. 5v out regulated voltage output. pin description (5-pin sot-23a) symbol description detailed description the tc1014, tc1015, and tc1185 are precision fixed output voltage regulators. (if an adjustable version is de- sired, please see the tc1070, tc1071, or tc1187 data sheets.) unlike bipolar regulators, the tc1014, tc1015, and tc1185 supply current does not increase with load current. in addition, v out remains stable and within regula- tion at very low load currents (an important consideration in rtc and cmos ram battery back-up applications). figure 1 shows a typical application circuit. the regula- tor is enabled any time the shutdown input (shdn) is at or above v ih , and shutdown (disabled) when shdn is at or below v il . shdn may be controlled by a cmos logic gate, or i/o port of a microcontroller. if the shdn input is not required, it should be connected directly to the input supply. while in shutdown, supply current decreases to 0.05 a (typical) and v out falls to zero volts. bypass input a 470pf capacitor connected from the bypass input to ground reduces noise present on the internal reference, which in turn significantly reduces output noise. if output noise is not a concern, this input may be left unconnected. larger capacitor values may be used, but results in a longer time period to rated output voltage when power is initially applied. output capacitor a 1 f (min) capacitor from v out to ground is required. the output capacitor should have an effective series resis- tance of 5 ? or less. a 1 f capacitor should be connected from v in to gnd if there is more than 10 inches of wire between the regulator and the ac filter capacitor, or if a battery is used as the power source. aluminum electrolytic or tantalum capacitor types can be used. (since many aluminum electrolytic capacitors freeze at approximately 30 c, solid tantalums are recommended for applications operating below ?25 c.) when operating from sources other than batteries, supply-noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques. thermal considerations thermal shutdown integrated thermal protection circuitry shuts the regula- tor off when die temperature exceeds 160 c. the regulator remains off until the die temperature drops to approximately 150 c. power dissipation the amount of power the regulator dissipates is prima- rily a function of input and output voltage, and output current. the following equation is used to calculate worst case power dissipation: figure 1. typical application circuit
tc1014 tc1015 tc1185 4 tc1014/tc1015/tc1185-3 01/04/01 50ma, 100ma, 150ma cmos ldos with shutdown and reference bypass ? 2001 microchip technology inc. ds21335a maximum allowable power dissipation: p d max = (t j max ?t a max ) ja = (125 ?55) 220 = 318mw in this example, the tc1014 dissipates a maximum of only 26.7 mw; far below the allowable limit of 318 mw. in a similar manner, equation 1 and equation 2 can be used to calculate maximum current and/or input voltage limits. layout considerations the primary path of heat conduction out of the package is via the package leads. therefore, layouts having a ground plane, wide traces at the pads, and wide power supply bus lines combine to lower ja and, therefore, increase the maximum allowable power dissipation limit. p d (v in max ? v out min ) i load max where: p d = worst case actual power dissipation v in max = maximum voltage on v in v out min = minimum regulator output voltage i load max = maximum output (load) current equation 1. the maximum allowable power dissipation (equation 2) is a function of the maximum ambient temperature (t a max ), the maximum allowable die temperature (125 c) and the thermal resistance from junction-to-air ( ja ). the 5-pin sot-23a package has a ja of approximately 220 c/ watt when mounted on a single layer fr4 dielectric copper clad pc board. p d max = (t j max ?t a max ) ja where all terms are previously defined. equation 2. equation 1 can be used in conjunction with equation 2 to ensure regulator thermal operation is within limits. for example: given: v in max = 3.0v +10% v out min = 2.7v ?2.5% i load max = 40ma t jmax = 125 c t amax = 55 c find: 1. actual power dissipation 2. maximum allowable dissipation actual power dissipation: p d (v in max ? v out min ) i load max = [(3.0 x 1.1) ?(2.7 x .975)]40 x 10 ? = 26.7mw
tc1014 tc1015 tc1185 5 tc1014/tc1015/tc1185-3 01/04/01 50ma, 100ma, 150ma cmos ldos with shutdown and reference bypass ? 2001 microchip technology inc. ds21335a ground current vs.v in (v out = 3.3v) 0 10 20 30 40 50 60 70 80 90 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 v in (v) gnd current (a) i load = 10ma c in = 1f c out = 1f typical characteristics: (unless otherwise specified, all parts are measured at temperature = 25 c) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 dropout voltage vs. temperature (v out = 3.3v) 0.000 0.010 0.020 0.030 0.040 0.050 0.060 0.070 0.080 0.090 0.100 -40 -20 0 20 50 70 125 temperature c dropout voltage (v) c in = 1f c out = 1f i load = 50ma dropout voltage vs. temperature (v out = 3.3v) 0.000 0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 0.018 0.020 -40 -20 0 20 50 70 125 temperature ( c) dropout voltage (v) c in = 1f c out = 1f i load = 10ma dropout voltage vs. temperature (v out = 3.3v) 0.000 0.020 0.040 0.060 0.080 0.100 0.120 0.140 0.160 0.180 0.200 -40 -20 0 20 50 70 125 temperature c dropout voltage (v) c in = 1f c out = 1 f i load = 100ma dropout voltage vs. temperature (v out = 3.3v) 0.000 0.050 0.100 0.150 0.200 0.250 0.300 -40 -20 0 20 50 70 125 temperature c dropout voltage (v) c in = 1f c out = 1f i load = 150ma ground current vs.v in (v out = 3.3v) 0 10 20 30 40 50 60 70 80 90 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 v in (v) gnd current (a) i load = 100ma c in = 1f c out = 1f 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
tc1014 tc1015 tc1185 6 tc1014/tc1015/tc1185-3 01/04/01 50ma, 100ma, 150ma cmos ldos with shutdown and reference bypass ? 2001 microchip technology inc. ds21335a ground current vs.v in (v out = 3.3v) 0 10 20 30 40 50 60 70 80 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 v in (v) gnd current ( a) i load = 150ma c in = 1f c out = 1f typical characteristics: (unless otherwise specified, all parts are measured at temperature = 2 5 c ) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 output voltage vs. temperature ( v out = 3.3v) 3.275 3.280 3.285 3.290 3.295 3.300 3.305 3.310 3.315 3.320 -40 -20 -10 0 20 40 85 125 temperature c v out (v) i load = 10ma c in = 1f c out = 1f v in = 4.3v output voltage vs. temperature (v out = 3.3v) 3.274 3.276 3.278 3.280 3.282 3.284 3.286 3.288 3.290 -40 -20 -10 0 20 40 85 125 temperature c v out (v) i load = 150 ma c in = 1f c out = 1 f v in = 4.3v v out vs.v in (v out = 3.3v) 0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 v out (v) c in = 1f c out = 1f i load = 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 v out vs. v in ( v out = 3.3v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 v out (v) i load = 100ma c in = 1f c out = 1f 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 v in (v) v in (v)
tc1014 tc1015 tc1185 7 tc1014/tc1015/tc1185-3 01/04/01 50ma, 100ma, 150ma cmos ldos with shutdown and reference bypass ? 2001 microchip technology inc. ds21335a typical characteristics 10.0 1.0 0.1 0.0 0.01k 0.1k 1k 10k 100k 1000k frequency (hz) output noise vs. frequency noise ( v/ hz) r load = 50 ? c out = 1 f c in = 1 f c byp = 0 1000 100 10 1 0.1 0.01 0 10 20 30 40 50 60 70 80 90 100 load current (ma) stability region vs. load current c out esr ( ? ) c out = 1 f to 10 f stable region 30 35 40 45 50 60 55 65 70 75 80 0.01k 0.1k 1k 10k 100k 1000k frequency (hz) power supply rejection ratio psrr (db) i out = 10ma v in dc = 4v v in ac = 100mv p-p v out = 3v c in = 0 c out = 1 f ouput voltage vs.temperature (v out = 5v) 4.985 4.990 4.995 5.000 5.005 5.010 5.015 5.020 5.025 -40 -20 -10 0 20 40 85 125 temperature c v out (v) i load = 10ma v in = 6v, c out = 1f, c in = 1f output voltage vs.temperature (v out = 5v) 4.974 4.976 4.978 4.980 4.982 4.984 4.986 4.988 4.990 4.992 4.994 -40 -20 -10 0 20 40 85 125 temperature c v out (v) i load = 150ma v in = 6v, c out = 1f, c in = 1f temperature vs. quiescent current (v out = 5v) 0 10 20 30 40 50 60 70 -40 -20 -10 0 20 40 85 125 temperature c gnd current (a) i load = 10ma v in = 6v, c out = 1f, c in = 1f temperature vs. quiescent current (v out = 5v) 0 10 20 30 40 50 60 70 80 -40 -20 -10 0 20 40 85 125 temperature ( c) gnd current (a) v in = 6v, c out = 1f, c in = 1f i load = 150ma
tc1014 tc1015 tc1185 8 tc1014/tc1015/tc1185-3 01/04/01 50ma, 100ma, 150ma cmos ldos with shutdown and reference bypass ? 2001 microchip technology inc. ds21335a typical characteristics measure rise time of 3.3v ldo with bypass capacitor conditions: c in = 1 f, c out = 1 f, c byp = 470pf, i load = 100ma v in = 4.3v, temp = 25 c, rise time = 448 s measure rise time of 3.3v ldo without bypass capacitor conditions: c in = 1 f, c out = 1 f, c byp = 0pf, i load = 100ma v in = 4.3v, temp = 25 c, rise time = 184 s measure fall time of 3.3v ldo with bypass capacitor conditions: c in = 1 f, c out = 1 f, c byp = 470pf, i load = 50ma v in = 4.3v, temp = 25 c, fall time = 100 s measure fall time of 3.3v ldo without bypass capacitor conditions: c in = 1 f, c out = 1 f, c byp = 0pf, i load = 100ma v in = 4.3v, temp = 25 c, fall time = 52 s v shdn v out v out v shdn v out v shdn v out v shdn
tc1014 tc1015 tc1185 9 tc1014/tc1015/tc1185-3 01/04/01 50ma, 100ma, 150ma cmos ldos with shutdown and reference bypass ? 2001 microchip technology inc. ds21335a typical characteristics measure rise time of 5.0v ldo with bypass capacitor conditions: c in = 1 f, c out = 1 f, c byp = 470pf, i load = 100ma v in = 6v, temp = 25 c, rise time = 390 s measure rise time of 5.0v ldo without bypass capacitor conditions: c in = 1 f, c out = 1 f, c byp = 0, i load = 100ma v in = 6v, temp = 25 c, rise time = 192 s measure fall time of 5.0v ldo with bypass capacitor conditions: c in = 1 f, c out = 1 f, c byp = 470pf, i load = 50ma v in = 6v, temp = 25 c, fall time = 167 s measure fall time of 5.0v ldo without bypass capacitor conditions: c in = 1 f, c out = 1 f, c byp = 0pf, i load = 100ma v in = 6v, temp = 25 c, fall time = 88 s v out v shdn v out v shdn v out v shdn v out v shdn
tc1014 tc1015 tc1185 10 tc1014/tc1015/tc1185-3 01/04/01 50ma, 100ma, 150ma cmos ldos with shutdown and reference bypass ? 2001 microchip technology inc. ds21335a load regulation of 3.3v ldo conditions: c in = 1 f, c out = 2.2 f, c byp = 470pf, v in = v out + 0.25v, temp = 25 c typical characteristics load regulation of 3.3v ldo conditions: c in = 1 f, c out = 2.2 f, c byp = 470pf, v in = v out + 0.25v, temp = 25 c load regulation of 3.3v ldo conditions: c in = 1 f, c out = 2.2 f, c byp = 470pf, v in = v out + 0.25v, temp = 25 c line regulation of 3.3v ldo conditions: v in = 4v,+ 1v squarewave @ 2.5khz, i load v out i load = 50ma switched in at 10khz, v out is ac coupled i load v out i load = 100ma switched in at 10khz, v out is ac coupled i load v out i load = 150ma switched in at 10khz, v out is ac coupled v in v out c in = 0 f, c out = 1 f, c byp = 470pf, i load = 100ma, v in & v out are ac coupled
tc1014 tc1015 tc1185 11 tc1014/tc1015/tc1185-3 01/04/01 50ma, 100ma, 150ma cmos ldos with shutdown and reference bypass ? 2001 microchip technology inc. ds21335a line regulation of 5.0v ldo conditions: v in = 6v,+ 1v squarewave @ 2.5khz, typical characteristics thermal shutdown response of 5.0v ldo conditions: v in = 6v,c in = 0 f, c out = 1 f i load was increased until temperature of die reached about 160 c, at which time integrated thermal protection circuitry shuts the regulator off when die temperature exceeds approximately 160 c. the regulator remains off until die temperature drops to approximately 150 c. v in v out v out c in = 0 f, c out = 1 f, c byp = 470pf, i load = 100ma, v in & v out are ac coupled
tc1014 tc1015 tc1185 12 tc1014/tc1015/tc1185-3 01/04/01 50ma, 100ma, 150ma cmos ldos with shutdown and reference bypass ? 2001 microchip technology inc. ds21335a & b = part number code + temperature range and voltage (v) tc1014 code tc1015 code tc1185 code 1.8 ay by ny 2.5 a1 b1 n1 2.7 a2 b2 n2 2.8 az bz nz 2.85 a8 b8 n8 3.0 a3 b3 n3 3.3 a5 b5 n5 3.6 a9 b9 n9 4.0 a0 b0 n0 5.0 a7 b7 n7 represents date code represents lot id number taping form 5-pin sot-23a marking user direction of feed user direction of feed device marking component taping orientation for 5-pin sot-23a (eiaj sc-74a) devices device marking pin 1 pin 1 standard reel component orientation tr suffix device (mark right side up) reverse reel component orientation rt suffix device (mark upside down) w p package carrier width (w) pitch (p) part per full reel reel size 5-pin sot-23a 8 mm 4 mm 3000 7 in carrier tape, number of components per reel and reel size
tc1014 tc1015 tc1185 13 tc1014/tc1015/tc1185-3 01/04/01 50ma, 100ma, 150ma cmos ldos with shutdown and reference bypass ? 2001 microchip technology inc. ds21335a package dimensions dimensions: inches (mm) 5-pin sot-23a (eiaj sc-74a) .071 (1.80) .059 (1.50) .122 (3.10) .098 (2.50) .075 (1.90) ref. .020 (0.50) .012 (0.30) pin 1 .037 (0.95) ref. .122 (3.10) .106 (2.70) .057 (1.45) .035 (0.90) .006 (0.15) .000 (0.00) .024 (0.60) .004 (0.10) 10 max. .010 (0.25) .004 (0.09)
tc1014 tc1015 tc1185 14 tc1014/tc1015/tc1185-3 01/04/01 50ma, 100ma, 150ma cmos ldos with shutdown and reference bypass ? 2001 microchip technology inc. ds21335a information contained in this publication regarding device applications and the like is intended through suggestion only and ma y be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. no representation or warrant y is given and no liability is assumed by microchip technology incorporated with respect to the accuracy or use of such information, or infringement of patent s or other intellectual property rights arising from such use or otherwise. use of microchip?s products as critical components in life support systems is not authori zed except with express written approval by microchip. no licenses are conveyed, implicitly or otherwise, except as maybe explicitly expressed herein, under any intellec- tual property rights. the microchip logo and name are registered trademarks of microchip technology inc. in the u.s.a. and othe r countries. all rights reserved. all other trademarks mentioned herein are the property of their respective companies. all rights reserved. ? 2001 microchip technology incorporated. printed in the usa. 1/01 printed on recycled paper. americas corporate office 2355 west chandler blvd. chandler, az 85224-6199 tel: 480-792-7200 fax: 480-792-7277 technical support: 480-792-7627 web address: http://www.microchip.com rocky mountain 2355 west chandler blvd. chandler, az 85224-6199 tel: 480-792-7966 fax: 480-792-7456 atlanta 500 sugar mill road, suite 200b atlanta, ga 30350 tel: 770-640-0034 fax: 770-640-0307 austin analog product sales 8303 mopac expressway north suite a-201 austin, tx 78759 tel: 512-345-2030 fax: 512-345-6085 boston 2 lan drive, suite 120 westford, ma 01886 tel: 978-692-3848 fax: 978-692-3821 boston analog product sales unit a-8-1 millbrook tarry condominium 97 lowell road concord, ma 01742 tel: 978-371-6400 fax: 978-371-0050 chicago 333 pierce road, suite 180 itasca, il 60143 tel: 630-285-0071 fax: 630-285-0075 dallas 4570 westgrove drive, suite 160 addison, tx 75001 tel: 972-818-7423 fax: 972-818-2924 dayton two prestige place, suite 130 miamisburg, oh 45342 tel: 937-291-1654 fax: 937-291-9175 detroit tri-atria office building 32255 northwestern highway, suite 190 farmington hills, mi 48334 tel: 248-538-2250 fax: 248-538-2260 los angeles 18201 von karman, suite 1090 irvine, ca 92612 tel: 949-263-1888 fax: 949-263-1338 mountain view analog product sales 1300 terra bella avenue mountain view, ca 94043-1836 tel: 650-968-9241 fax: 650-967-1590 new york 150 motor parkway, suite 202 hauppauge, ny 11788 tel: 631-273-5305 fax: 631-273-5335 san jose microchip technology inc. 2107 north first street, suite 590 san jose, ca 95131 tel: 408-436-7950 fax: 408-436-7955 toronto 6285 northam drive, suite 108 mississauga, ontario l4v 1x5, canada tel: 905-673-0699 fax: 905-673-6509 asia/pacific china - beijing microchip technology beijing office unit 915 new china hong kong manhattan bldg. no. 6 chaoyangmen beidajie beijing, 100027, no. china tel: 86-10-85282100 fax: 86-10-85282104 china - shanghai microchip technology shanghai office room 701, bldg. b far east international plaza no. 317 xian xia road shanghai, 200051 tel: 86-21-6275-5700 fax: 86-21-6275-5060 hong kong microchip asia pacific rm 2101, tower 2, metroplaza 223 hing fong road kwai fong, n.t., hong kong tel: 852-2401-1200 fax: 852-2401-3431 india microchip technology inc. india liaison office divyasree chambers 1 floor, wing a (a3/a4) no. 11, o ? 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activite du moulin de massy 43 rue du saule trapu batiment a - ler etage 91300 massy, france tel: 33-1-69-53-63-20 fax: 33-1-69-30-90-79 germany arizona microchip technology gmbh gustav-heinemann ring 125 d-81739 munich, germany tel: 49-89-627-144 0 fax: 49-89-627-144-44 germany analog product sales lochhamer strasse 13 d-82152 martinsried, germany tel: 49-89-895650-0 fax: 49-89-895650-22 italy arizona microchip technology srl centro direzionale colleoni palazzo taurus 1 v. le colleoni 1 20041 agrate brianza milan, italy tel: 39-039-65791-1 fax: 39-039-6899883 united kingdom arizona microchip technology ltd. 505 eskdale road winnersh triangle wokingham berkshire, england rg41 5tu tel: 44 118 921 5869 fax: 44-118 921-5820 01/09/01 w orldwide s ales and s ervi ce

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