SSM3J307T 2008-10-28 1 toshiba field-effect transistor s ilicon p-chan nel mos type (u-mosv) SSM3J307T power management switch applications high-speed switching applications ? 1.5 v drive ? low on-resistance: r on = 83 m (max) (@v gs = -1.5 v) r on = 56 m (max) (@v gs = -1.8 v) r on = 40 m (max) (@v gs = -2.5 v) r on = 31 m (max) (@v gs = -4.5 v) absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v dss -20 v gate-source voltage v gss 8 v dc i d (note 1) -5.0 drain current pulse i dp (note 1) -10 a p d (note 2) 700 drain power dissipation t = 10 s 1250 mw channel temperature t ch 150 c storage temperature range t stg ?55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause th is product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating conc ept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: the junction temperature should not exceed 150 c during use. note 2: mounted on an fr4 board. (25.4 mm 25.4 mm 1.6 mm, cu pad: 645 mm 2 ) marking equivalent circuit (top view) unit: mm 0.15 00.1 0.160.05 0.70.05 2.90.2 0.950.95 1.6-0.1 +0.2 2.8-0.3 +0.2 1.90.2 0.40.1 jedec D jeita D toshiba 2-3s1a weight: 10 mg (typ.) 1: gate 2: source 3: drain 1 2 3 kdp 1 2 3 tsm
SSM3J307T 2008-10-28 2 electrical characteristics (ta = 25c) characteristic symbol test conditions min typ. max unit v (br) dss i d = -1 ma, v gs = 0 v -20 ? ? drain-source breakdown voltage v (br) dsx i d = -1 ma, v gs = +8 v -12 ? ? v drain cut-off current i dss v ds = -20v, v gs = 0 v ? ? -10 a gate leakage current i gss v gs = 8 v, v ds = 0 v ? ? 1 a gate threshold voltage v th v ds = -3 v, i d = -1 ma -0.3 ? -1.0 v forward transfer admittance ? y fs ? v ds = -3 v, i d = -4.0 a (note 3) 9.8 ? ? s i d = -4.0 a, v gs = -4.5 v (note 3) ? 25 31 i d = -4.0 a, v gs = -2.5 v (note 3) ? 31 40 i d = -1.5 a, v gs = -1.8 v (note 3) ? 38 56 drain?source on-resistance r ds (on) i d = -0.75 a, v gs = -1.5 v (note 3) ? 46 83 m input capacitance c iss ? 1170 ? output capacitance c oss ? 250 ? reverse transfer capacitance c rss v ds = -10 v, v gs = 0 v, f = 1 mhz ? 200 ? pf total gate charge q g ? 19 ? gate-source charge q gs ? 14.2 ? gate-drain charge q gd v ds = ?10 v, i d = ?5.0 a v gs = ?4.5 v ? 4.8 ? nc turn-on time t on ? 35 ? switching time turn-off time t off v dd = -10 v, i d = -2.0 a, v gs = 0 to -2.5 v, r g = 4.7 ? 160 ? ns drain-source forward voltage v dsf i d = 5.0 a, v gs = 0 v (note 3) ? 0.83 1.2 v note 3: pulse test switching time test circuit (a) test circuit (b) v in usage considerations let v th be the voltage applied between gate and sour ce that causes the drain current (i d ) to below ? 1 ma for the SSM3J307T. then, for normal switching operation, v gs(on) must be higher than v th, and v gs(off) must be lower than v th. this relationship can be expressed as: v gs(off) < v th < v gs(on). take this into consideration when using the device. handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. (c) v out v dd = ? 10 v r g = 4.7 d.u. 1% v in : t r , t f < 5 ns common source ta = 25c 0 ? 2.5v 10 s in v dd out r g r l t on 90% 10% ?2.5 v 0 v 90% 10% t off t r t f v ds ( on ) v dd
SSM3J307T 2008-10-28 3 ambient temperature ta (c) v th ? ta gate threshold voltage v th (v) -1.0 0 ? 50 0 150 -0.5 50 100 common source v ds = -3 v i d = -1 ma gate?source voltage v gs (v) i d ? v gs drain current i d (a) -10 0 -0.1 -1 -0.001 -0.01 -0.0001 -2.0 -1.0 ? 25 c ta = 100 c 25 c common source v ds = -3 v drain?source voltage v ds (v) i d ? v ds drain current i d (a) 0 -4.0 0 -0.2 -0.4 -0.6 -1 -2.0 -0.8 -6.0 -8.0 -8v common source ta = 25 c -4.5v -1.5 v -1.8 v v gs =-1.2 v -3.0v -2.5v -10 -8.0 ambient temperature ta (c) r ds (on) ? ta drain?source on-resistance r ds (on) (m ? ) 0 ? 50 0 50 150 150 100 100 50 common source i d = -4.0 a / v gs = -4.5 v -0.75 a / -1.5 v -4.0 a / -2.5 v -1.5 a / -1.8v r ds (on) ? i d drain current i d (a) drain?source on-resistance r ds (on) (m ? ) 0 -2.0 -4.0 0 150 -6.0 -10 100 50 v gs = -4.5 v -1.2 v -1.5 v -2.5 v -1.8v common source ta = 25c drain?source on-resistance r ds (on) (m ? ) 0 -2 -4 -6 gate?source voltage v gs (v) 0 150 r ds (on) ? v gs -8 50 ? 25 c ta = 100 c 25 c 100 i d = -4.0a common source ta = 25c
SSM3J307T 2008-10-28 4 drain current i d (a) forward transfer admittance ? y fs ? (s) |y fs | ? i d 0.1 -10 1 10 -0.1 -1 3 0.3 -0.01 100 30 common source v ds = -3 v ta = 25c drain reverse current i dr (a) drain?source voltage v ds (v) i dr ? v ds 10 0 0.1 1 0.001 0.01 0.2 0.6 0.4 1.0 0.8 1.2 ? 25 c ta =100 c 25 c common source v gs = 0 v g d s i dr total gate charge qg (nc) dynamic input characteristic gate?source voltage v gs (v) 0 0 20 30 -4 -8 40 -6 -2 10 common source i d = -5.0 a ta = 25c v dd = - 16 v v dd = - 10 v drain current i d (a) switching time t (ns) t ? i d 1 -0.001 1000 -0.1 10000 -1 -10 100 t f common source v dd = -10 v v gs = 0 to -2.5 v ta = 25 c r g = 4.7 10 -0.01 t off t r t on drain?source voltage v ds (v) c ? v ds capacitance c (pf) 10 -0.1 -1 -10 -100 1000 10000 3000 5000 300 500 100 50 30 common source ta = 25c f = 1 mhz v gs = 0 v c iss c rss c oss
SSM3J307T 2008-10-28 5 ambient temperature ta (c) p d ? t a drain power dissipation p d (mw) 800 0 200 120 100 140 400 600 160 1000 80 60 40 20 0 -20 -40 a b a: mounted on fr4 board (25.4 mm 25.4 mm 1.6 mm , cu pad : 645 mm 2 ) b: mounted on fr4 board (25.4 mm 25.4 mm 1.6 mm , cu pad: 0.8 mm 2 3) transient thermal impedance r th (c/w) pulse width t w (s) r th ? t w 1 100 1000 10 0.001 0.01 0.1 1000 1 10 100 a: mounted on fr4 board (25.4 mm 25.4 mm 1.6 mm , cu pad : 645 mm 2 ) b: mounted on fr4 board (25.4 mm 25.4 mm 1.6 mm , cu pad: 0.8 mm 2 3) a b
SSM3J307T 2008-10-28 6 restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
|
