? lateral effect position sensing photodiodes specifications responsivity: 0.40 a/w typical @ 800nm. non-uniformity: 5% (1mm spot) typical. part number active area storage & operating temp. position measurement accuracy position resolution 1 inter-electrode resistance dark current 2 @ 5v capacitance 3 @ 0v response time 4 . in. (mm) (c ) (typ) (cm) (typ) (?/ ? hz) (k w ) (na) (typ) (pfd) (typ) (khz) sd 200-21-21-301 .20 x .076 (5 x 1.93) -40 to 80 .01 1.4 20 200 200 35 sd 1166-21-11-301 1.166 x .146 (29.6 x 3.7) -40 to 80 .06 8.3 2 1,000 13,000 12 sd 386-22-21-251 .390 sq. (9.9 sq.) -40 to 80 .10 2.8 1.5 1,000 1,500 35 ? 1. minimum detectable displacement with 100a signal current (5.6 pa/ ? hz) and position sensitivity defined as where is responsivity, is power (watts) and is the cell mechanical radius (cm). 2. dark current varies with temperature as follows: for t>23 c, i d =1.09 d t i d23, and for t<23 c, i d =i d23 /1.09 d t , where d t is the temperature difference from 23 c, and i d23 is the dark current at 23 c. 3. typical values are listed in the table. maximum value is 20% higher than the typical value. 4. response times listed are for the rising or falling edge, and were measured at 830nm with a 50 w load. shorter wavelengths will result in faster rise and fall times. ? sd 200-21-21-301 sd 1166-21-11-301 lateral file:///d|/web sites/api temp/tmp7nbegmqdx.htm (1 of 2) [7/17/2001 11:08:31 am]
? sd 386-22-21-251 ? lateral file:///d|/web sites/api temp/tmp7nbegmqdx.htm (2 of 2) [7/17/2001 11:08:31 am]
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