irgpc30ud2 insulated gate bipolar transistor with ultrafast soft recovery diode features ? switching-loss rating includes all "tail" losses ? hexfred tm soft ultrafast diodes ? optimized for high operating frequency (over 5khz) see fig. 1 for current vs. frequency curve e g n-channel c v ces = 600v v ce(sat) 3.0v @v ge = 15v, i c = 12a parameter min. typ. max. units r q jc junction-to-case - igbt ------ ------ 1.2 r q jc junction-to-case - diode ------ ------ 2.5 c/w r q cs case-to-sink, flat, greased surface ------ 0.24 ------ r q ja junction-to-ambient, typical socket mount - ---- ----- 40 wt weight ------ 6 (0.21) ------ g (oz) thermal resistance description co-packaged igbts are a natural extension of international rectifier's well known igbt line. they provide the convenience of an igbt and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, ups and power supply applications. t o-247ac ultrafast copack igbt pd - 9.1112 parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 23 i c @ t c = 100c continuous collector current 12 i cm pulsed collector current ? 92 a i lm clamped inductive load current ? 92 i f @ t c = 100c diode continuous forward current 12 i fm diode maximum forward current 92 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 100 w p d @ t c = 100c maximum power dissipation 42 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1 n?m) absolute maximum ratings
parameter min. typ. max. units conditions q g total gate charge (turn-on) ---- 29 36 i c = 12a q ge gate - emitter charge (turn-on) ---- 4.8 6.8 nc v cc = 400v q gc gate - collector charge (turn-on) ---- 12 17 see fig. 8 t d(on) turn-on delay time ---- 67 ---- t j = 25c t r rise time ---- 56 ---- ns i c = 12a, v cc = 480v t d(off) turn-off delay time ---- 170 250 v ge = 15v, r g = 23 w t f fall time ---- 140 270 energy losses include "tail" and e on turn-on switching loss ---- 0.70 ---- diode reverse recovery. e off turn-off switching loss ---- 0.80 ---- mj see fig. 9, 10, 11, 18 e ts total switching loss ---- 1.5 2.5 t d(on) turn-on delay time ---- 61 ---- t j = 150c, see fig. 9, 10, 11, 18 t r rise time ---- 51 ---- ns i c = 12a, v cc = 480v t d(off) turn-off delay time ---- 190 ---- v ge = 15v, r g = 23 w t f fall time ---- 190 ---- energy losses include "tail" and e ts total switching loss ---- 1.9 ---- mj diode reverse recovery. l e internal emitter inductance ---- 13 ---- nh measured 5mm from package c ies input capacitance ---- 680 ---- v ge = 0v c oes output capacitance ---- 110 ---- pf v cc = 30v see fig. 7 c res reverse transfer capacitance ---- 11 ---- ? = 1.0mhz t rr diode reverse recovery time ---- 42 60 ns t j = 25c see fig. ---- 80 120 t j = 125c 14 i f = 12a i rr diode peak reverse recovery current ---- 3.5 6.0 a t j = 25c see fig. ---- 5.6 10 t j = 125c 15 v r = 200v q rr diode reverse recovery charge ---- 80 180 nc t j = 25c see fig. ---- 220 600 t j = 125c 16 di/dt = 200a/ s di (rec)m /dtdiode peak rate of fall of recovery ---- 180 ---- a/s t j = 25c see fig. during t b ---- 120 ---- t j = 125c 17 parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage ? 600 ---- ---- v v ge = 0v, i c = 250a d v (br)ces / d t j temperature coeff. of breakdown voltage ---- 0.63 ---- v/c v ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ---- 2.2 3.0 i c = 12a v ge = 15v ---- 2.7 ---- v i c = 23a see fig. 2, 5 ---- 2.4 ---- i c = 12a, t j = 150c v ge(th) gate threshold voltage 3.0 ---- 5.5 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage ---- -11 ---- mv/c v ce = v ge , i c = 250a g fe forward transconductance ? 3.1 8.6 ---- s v ce = 100v, i c = 12a i ces zero gate voltage collector current ---- ---- 250 a v ge = 0v, v ce = 600v ---- ---- 2500 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop ---- 1.4 1.7 v i c = 12a see fig. 13 ---- 1.3 1.6 i c = 12a, t j = 150c i ges gate-to-emitter leakage current ---- ---- 100 na v ge = 20v irgpc30ud2 ? pulse width 80s; duty factor 0.1%. ? v cc =80%(v ces ), v ge =20v, l=10h, r g = 23 w , ( see fig. 19 ) ? pulse width 5.0s, single shot. switching characteristics @ t j = 25c (unless otherwise specified) electrical characteristics @ t j = 25c (unless otherwise specified) ? repetitive rating; v ge =20v, pulse width limited by max. junction temperature. ( see fig. 20 ) notes:
fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics irgpc30ud2 0.1 1 10 100 1000 510152 0 c i , collector-to-emitter current (a) v , gate-to-emitter voltage (v) ge t = 25c t = 150c j j v = 100v 5s pulse width cc 1 10 100 1000 11 0 ce c i , c ollector-to-e mi tter current (a ) v , collector-to-emitter voltage (v) t = 150c t = 25c j j v = 15v 20s pulse width ge 0 4 8 12 16 20 0.1 1 10 100 f, frequency (khz) load current (a) a 60% of rated voltage d uty cycle: 50% t = 125c t = 90c gate drive as specified turn-on losses include effects of reverse recovery sink j power dissipation = 24w
fig. 5 - collector-to-emitter voltage vs. case temperature fig. 4 - maximum collector current vs. case temperature irgpc30ud2 fig. 6 - maximum igbt effective transient thermal impedance, junction-to-case 0 5 10 15 20 25 25 50 75 100 125 15 0 maximum dc collector current (a) t , case temperature (c) c v = 15v ge 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -60 -40 -20 0 20 40 60 80 100 120 140 16 0 t , case temperature (c) c ce v , collector-to-emitter voltage (v) v = 15v 80s pulse width ge i = 24a i = 12a i = 6.0a c c c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) thermal response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 12 jdmthjc c
irgpc30ud2 fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. case temperature 1.4 1.5 1.6 1.7 0 102030405060 g total switching losses (mj) r , gate resistance ( w ) a v = 480v v = 15v t = 25c i = 12a cc ge c c 0.1 1 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 c t , case temperature (c) total switching losses (mj) a i = 24a i = 12a i = 6.0a c c c r = 23 w v = 15v v = 480v g ge cc 0 200 400 600 800 1000 1200 1400 110100 ce c, capacitance (pf) v , collector-to-emitter voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c ge ies ge gc ce res gc oes ce gc c ies c res c oes 0 4 8 12 16 20 0 5 10 15 20 25 30 ge v , gate-to-e mitter voltage (v) q , total gate charge (nc) g v = 400v i = 12a ce c
fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa fig. 13 - maximum forward voltage drop vs. instantaneous forward current irgpc30ud2 0.0 1.0 2.0 3.0 4.0 5.0 0 5 10 15 20 25 c total switching losses (mj) i , collector-to-emitter current (a) a r = 23 w t = 150c v = 480v v = 15v g c cc ge 0.1 1 10 100 1000 1 10 100 100 0 c ce ge v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) safe operating area v = 20v t = 125c ge j 1 10 100 0.4 0.8 1.2 1.6 2.0 2.4 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j
fig. 14 - typical reverse recovery vs. di f /dt fig. 15 - typical recovery current vs. di f /dt fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs. di f /dt irgpc30ud2 0 200 400 600 100 1000 f di /dt - (a/s) rr q - (nc) i = 6.0a i = 12a i = 24a v = 200v t = 125c t = 25c r j j f f f 10 100 1000 10000 100 1000 f di /dt - (a/s) di(rec)m/dt - (a/s) i = 12a i = 24a i = 6.0a f f f v = 200v t = 125c t = 25 c r j j 0 40 80 120 160 100 1000 f di /dt - (a/s) t - (ns) rr i = 24a i = 12a i = 6.0a f f f v = 200v t = 125c t = 25c r j j 1 10 100 100 1000 f di /dt - (a/s) i - (a) irrm i = 6.0a i = 12a i = 24a f f f v = 200v t = 125c t = 25c r j j
t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5s vce ic dt 90% vge +vge eoff = fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = er ec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt same t ype device as d.u.t. d.u.t. 430f 80% of vce fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr irgpc30ud2
vg gate signal device under tes t current d.u.t. vol tage i n d. u.t. current in d1 t0 t1 t2 fig. 18e - macro waveforms for test circuit of fig. 18a fig. 19 - clamped inductive load test circuit r l = 480v 4 x i c @25c 0 - 480v fig. 20 - pulsed collector current test circuit d imensions in millimeters and ( inches ) conforms to jedec outline to-247ac (to-3p) - d - 5.30 (.209) 4.70 (.185) 3.65 (.143) 3.55 (.140) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m c a s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) d m m b - a - 15.90 (.626) 15.30 (.602) - b - 1 2 3 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) * notes: 1 dimensions & t olerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 dimensions are shown millimeters (inches). 4 conforms to jedec outline to-247ac. l ead assi gnment s 1 - gate 2 - collector 3 - emitter 4 - collector * longer leaded (20mm) version available (to-247ad) to order add "-e" suffix to part number irgpc30ud2 d.u.t. v * c 50v l 1000v 6000f 100v
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/
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