on- state current absolute maximum ratings, according to iec publication no. 134 off-state voltage rms on- state current (full sine wave) it(rms) parameter conditions value unit symbol itsm i2t igm p g(av) tj tstg di/dt itsm tsld soldering temperature ft16...j gate trigger current may - 10 non- repetitive on-state current 260 10s max c operating temperature storage temperature average gate power dissipation critical rate of rise of on-state current fusing current peak gate current non- repetitive on-state current all conduction angle, t c = 83 c full cycle, 50 hz (t = 20 ms) 20 s max. t j =125 c full cycle, 60 hz (t = 16.7 ms) tp = 10 ms, half cycle ig = 2x igt , tr 100ns tj =125 c f= 120 hz, t j =125 c 16 168 160 144 4 1 (-40 + 125) (-40 + 150) c c a/s w a a2s a a a 50 16 amp 200 v 800 v this series of triac s uses a high performance pnpn technology. these parts are intended for general purpose ac switching applications with highly inductive loads. the ft....j series provides an isolated tab (rated at 2500 vrms). * logic level current triac * low thermal resistance with clip bounding * low thermal resistance isolation ceramic for ft....j 10 ma (08) insulated logic level triac repetitive peak off state voltage parameter voltage unit symbol 200 600 400 vdrm / vrrm 800 b d m n v mt1 mt2 g mt2 mt1 g insulated to-220ab
electrical characteristics fagor triac current case voltage sensitivity f t 16 08 b j 00 forming tu packaging part number information (1) minimum i gt is guaranted at 5% of igt max. (2) for either polarity of electrode mt2 voltage with reference to electrode mt1. parameter conditions sensitivity unit symbol vd = 12 vdc , rl = 33w, quadrant c/w 60 q1q4 q4 08 10 may - 10 ft16...j ma max max igt (1) q1q3 gate trigger current vd = 12 vdc , rl = 33w , ma q1q3 vgt gate trigger voltage vgd gate non trigger voltage off-state leakage current idrm/irrm ih (2) rth(j-a) thermal resistance vd = vdrm, tj = 125 c tj = 25 c vr = vrrm, it = 100 ma, gate open, vd = vdrm , rl = 3.3 kw, rd (2) dynamic resistance latching current ig = 1.2 i gt, tj = 25 c dv/dt (2) critical rate of voltage rise rth(j-c) thermal resistance vt (o) (2) threshold voltage tj = 125 c vd = 0.67 x vdrm , gate open for ac 360 conduction angle junction-ambient junction-case holding current tj = 25 c tj = 125 c tj = 125 c vtm (2) on- state voltage it = 22.5 amp, tp = 380 s, tj = 25 c il (dl/dt)c (2) s = 1 cm2 2.1 c/w max max max max max min min 5 a 2 ma 25 mw 0.85 v 1.55 v a/ms a/ms min 40 v/s q2 max 30 ma q1,q3 q1q4 q1q3 1.3 0.2 ma max max min min max max ma v v v v tj = 125 c tj = 125 c critical rate of current rise tj = 125 c tj = 25 c tj = 25 c (dv/dt)c = 0.1 v/s (dv/dt)c = 10 v/s 25 insulated logic level triac 3.0 8.5 15 - - -
1e+0 k=[zth / rth] 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2 tp (s) it(rms)(a) fig. 2: rms on-state current versus case temperature (full cycle). fig. 3: relative variation of thermal impedance versus pulse duration. fig. 5: surge peak on-state current versus number of cycles fig. 4: on-state characteristics (maximum values) 200 itm (a) 1.0 1.5 2 2.5 3 3.5 vtm (v) 4 4.5 5 i tsm (a) number of cycles fig. 1: maximum power dissipation versus rms on- state current (full cycle). fig. 6: non repetitive surge peak on-state current for a sinusoidal pulse with width: tp < 10 ms, and corresponding value of i 2t. p (w) it(rms)(a) 0 0 100 25 125 50 75 itsm (a). i2t (a2s) tp(ms) 1 20 100 1000 may - 10 ft16...j 2 4 6 8 10 1 0.5 1e-1 1e-2 10 0 2 6 0 4 6 2 8 10 12 8 4 10 14 1 10 100 1000 zth(j-a) zth(j-c) tc (c) 12 14 16 10 12 14 0 40 20 100 120 140 tj max tj = 25 c tj max vto = 0.85 v rd = 25 mw 100 60 80 16 18 20 16 18 10 itsm i2t tj initial=25 c 160 180 t=20ms one cycle non repetitive tj initial = 25 c insulated logic level triac
may - 10 fig. 8: relative variation of critical rate of decrease of main current versus junction temperature fig. 7: relative variation of gate trigger current, holding current and latching versus junction temperature (typical values) 0 50 75 100 125 0 20 40 60 80 100 120 140 0 0.5 2.0 1.0 1.5 2.5 25 (di/dt)c [tj]/(di/dc)c [tj specified] 6 5 4 3 2 1 0 i gt,ih,il[tj]/i gt,ih,il.[tj=25c] tj(oc) tj(c) -40 -20 fig. 9: relative variation of critical rate of decrease of main current versus (dv/dt)c (typical values). 2.0 0.1 ft16...j 1.0 10.0 100.0 1.6 1.8 1.4 1.2 1.0 0.8 0.6 0.4 (dv/dt)c (v/s) igt ih&il mounting torque 1 n.m (*) limiting values and life support applications, see web page. a a1 a2 b2 d1 e e h1 l1 p ref. dimensions milimeters min. max. 3.56 c d l 0.50 2.00 0.38 1.14 0.31 14.22 9.02 5.03 5.84 12.70 3.53 4.83 1.40 2.92 1.02 1.78 0.61 16.51 10.67 2.59 5.18 6.86 14.74 e1 q 2.49 9.65 8.38 6.35 3.43 2.54 b 4.09 package mechanical data: insulated to-220ab insulated logic level triac
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