advanced power p-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss -100v simple drive requirement r ds(on) 180m fast switching characteristic i d -12a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice 1 AP18P10GH/j rating -100 20 -12 rohs-compliant product continuous drain current, v gs @ 10v -10 pulsed drain current 1 -48 parameter total power dissipation operating junction temperature range storage temperature range 200810162 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v -55 to 150 35.7 -55 to 150 thermal data g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s to-252(h) g d s to-251(j) the to-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap18p10gj) is available for low-profile applications.
AP18P10GH/j electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-1ma -100 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-8a - - 180 m ? ? , ?
AP18P10GH/j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 120 150 180 210 240 270 300 246810 -v gs , gate-to-source voltage (v) r ds(on) (m
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 AP18P10GH/j q v g -4.5v q gs q gd q g charge 0 3 6 9 12 15 0 10203040 q g , total gate charge (nc) -v gs , gate to source voltage (v) v ds = -80v i d = -8a 10 100 1000 10000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 1 10 100 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0 2.5 5 7.5 10 12.5 15 0246 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -5v
package outline : to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 e3 f 2.20 2.63 3.05 f1 0.5 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-252 symbols e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm part number package code 18p10gh ywwsss date code (ywwsss) ylast digit of the year wwweek ssssequence logo meet rohs requirement 5
package outline : to-251 min nom max a 2.20 2.30 2.40 a1 0.90 1.20 1.50 b1 0.50 0.69 0.88 b2 0.60 0.87 1.14 c 0.40 0.50 0.60 c1 0.40 0.50 0.60 d 6.40 6.60 6.80 d1 5.20 5.35 5.50 e 6.70 7.00 7.30 e1 5.40 5.80 6.20 e ---- 2.30 ---- f 5.88 6.84 7.80 meet rohs requirement for low voltage mosfet only
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