1 ut54acs02e radiation-hardened quadruple 2-input nor gates december 2003 www.aeroflex.com/radhard features ? 0.6 m crh cmos process - latchup immune ? high speed ? low power consumption ? wide power supply operating range of 3.0v to 5.5v ? available qml q or v processes ? 14-lead flatpack description the ut54acs02e is a quadruple, two-input nor gate. the circuit performs the boolean functions y = a + b or y = a ? b in positive logic. the device is characterized over the full military temperature range of -55 c to +125 c. function table logic symbol pinout 14-lead flatpack top view logic diagram inputs output a b y h x l x h l l l h y1 (1) (4) y2 y3 (10) (13) y4 (2) a1 (3) b1 (5) a2 (6) b2 (8) a3 (9) b3 (11) a4 (12) b4 note: 1. logic symbol in accordance with ansi/ieee standard 91-1984 and iec publication 617-12. 1 1 2 3 4 5 7 6 14 13 12 11 10 8 9 y1 a1 b1 y2 a2 b2 v ss v dd y4 b4 a4 y3 b3 a3 b4 a4 y4 b3 a3 y3 a1 b1 y1 a2 b2 y2
2 radiation hardness specifications 1 notes: 1. logic will not latchup during radiation exposu re within the limits defined in the table. 2. device storage elements are immune to seu affects. absolute maximum ratings note: 1. stresses outside the listed absolute maxi mum ratings may cause permanent damage to the device. this is a stress rating only, functional operation of the device at these or any other conditions beyond limits in dicated in the operational s ections is not reco mmended. exposure to absolute maxi mum rating conditions for extended periods may affect device reliability. recommended operating conditions parameter limit units total dose 1.0e6 rads(si) seu threshold 2 80 mev-cm 2 /mg sel threshold 120 mev-cm 2 /mg neutron fluence 1.0e14 n/cm 2 symbol parameter limit units v dd supply voltage -0.3 to 7.0 v v i/o voltage any pin -.3 to v dd + .3 v t stg storage temperature range -65 to +150 c t j maximum junction temperature +175 c t ls lead temperature (soldering 5 seconds) +300 c jc thermal resistance junction to case 20 c/w i i dc input current 10 ma p d maximum power dissipation 1 w symbol parameter limit units v dd supply voltage 3.0 to 5.5 v v in input voltage any pin 0 to v dd v t c temperature range -55 to + 125 c
3 dc electrical characteris tics for the ut54acs02e 7 ( v dd = 3.0v to 5.5v; v ss = 0v 6 ; -55 c < t c < +125 c) notes: 1. functional tests are conducted in accordance with mil-std-883 with th e following input test conditions: v ih = v ih (min) + 20%, - 0%; v il = v il (max) + 0%, - 50%, as specified herein, for ttl, cmos, or sc hmitt compatible inputs. devices may be test ed using any input voltage within the abov e specified range, but are guaranteed to v ih (min) and v il (max). 2. supplied as a design limit but not guaranteed or tested. 3. per mil-prf-38535, for current density 5.0e5 amps/cm 2 , the maximum product of load capac itance (per output buffer) times frequency should not exceed 3,765pf/ mhz. 4. not more than one output may be shorted at a time for maximum duration of one second. 5. capacitance measured for initial qualifi cation and when design changes may affect the value. capacitance is measured between the designated terminal and v ss at frequency of 1mhz and a signal amplitude of 50mv rms maximum. 6. maximum allowable relative shift equals 50mv. 7. all specifications va lid for radiation dose 1e6 rads(si) per mil-std-883 method 1019 condition b. 8. power dissipation specified per switching output. 9. this value is guaranteed based on characterization data, but not tested. symbol description condition vdd min max unit v il low-level input voltage 1 3.0v 0.9 v 5.5v 1.65 v ih high-level input voltage 1 3.0v 2.1 v 5.5v 3.85 i in input leakage current v in = v dd or v ss 5.5v -1 1 a v ol low-level output voltage 3 i ol = 100 a 3.0v 0.25 v 4.5v 0.25 v oh high-level output voltage 3 i oh = -100 a 3.0v 2.75 v 4.5v 4.25 i os short-circuit output current 2 ,4 v o = v dd and v ss 3.0v -100 100 ma 5.5v -200 200 i ol low level output current 9 v in = v dd or v ss v ol = 0.4v 3.0v 6 ma 5.5v 8 i oh high level output current 9 v in = v dd or v ss v oh = v dd -0.4v 3.0v -6 ma 5.5v -8 p total power dissipation 2, 8 c l = 50pf 5.5v 1.8 mw/ mhz i ddq quiescent supply current v in = v dd or v ss 5.5v 10 a c in input capacitance 5 ? = 1mhz 0v 15 pf c out output capacitance 5 ? = 1mhz 0v 15 pf
4 ac electrical characteristics for the ut54acs02e 2 (v dd = 3.0v to 5.5v; v ss = 0v 1 , -55 c < t c < +125 c) notes: 1. maximum allowable relative shift equals 50mv. 2. all specifications valid for radiation dose 1e6 rads(si) per mil-std-883 method 1019 condition b. symbol parameter condition v dd minimum maximum unit t plh input to yn c l = 30pf 3.0v & 3.6v 1 11 ns 4.5v & 5.5v 1 7 c l = 50pf 3.0v & 3.6v 1 15 ns 4.5v & 5.5v 1 11 t phl input to yn c l = 30pf 3.0v & 3.6v 1 13 ns 4.5v & 5.5v 1 9 c l = 50pf 3.0v & 3.6v 1 17 ns 4.5v & 5.5v 1 13
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packaging
ordering information ut54acs02e i/o type: acs = cmos compatible i/o level part number: 02e = quadruple 2-input nor gates package type: u = 14-lead ceramic bottom-brazed dual-in-line flatpack screening: (note 3) c = military temperature range (-55 o c to +125 o c) lead finish: (notes 1 & 2) a = solder c = gold x = optional ut54 *** **** - * ** notes: 1. lead finish (a, c, or x) must be specified. 2. if an "x" is specified when ordering, then the part markin g will match the lead finish and will be either "a" (solder) or " c" (gold). 3. military temperature range flow per aeroflex manufacturing flows document. devices have 48 hours of burn-in and are test a t -55 o c, room temperature, and 125 o c. radiation characterisitics are neither tested nor guaranteed and may not be specified.
ut54acs02e: smd drawing number: 96514 = ut54acs02e device type: 02 = tid per mil-std-883 tm1019 condition b package type: x = 14-lead ceramic botto m-brazed dual-in-line flatpack lead finish: (notes 1 & 2) a = solder c = gold x = optional 5962 ***** ** * * notes: 1. lead finish (a, c, or x) must be specified. 2. if an "x" is specified when ordering, then the part marking will match the lead finish and will be either "a" (solder) or " c" (gold). 3. total dose radiation must be specified when or dering. qml v is not available without radiation testing. * * total dose: (notes 3 & 4) r = 1e5 rads(si) f = 3e5 rads(si) g = 5e5 rads(si) h = 1e6 rads(si) 03 = tid per mil-std-883 tm1019 condition a class designator: q = qml class q v = qml class v 4. total dose tolerance of 1e6 rads(si) is only available for device type 02.
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