mar. 2003 mitsubishi hvigbt modules CM1200HC-66H high power switching use insulated type i c ................................................................ 1200a v ces ....................................................... 3300v insulated type 1-element in a pack aisic base plate application inverters, converters, dc choppers, induction heating, dc to dc converters. CM1200HC-66H outline drawing & circuit diagram dimensions in mm circuit diagram e c e e c c e g c label c e g c e cm ee cc 29.5 5 13 61.5 61.5 140 124 0.25 40 79.4 20.25 57 0.25 171 190 5.2 40 15 41.25 57 0.25 57 0.25 38 28 20 3 - m4 nuts 8 - 7mounting holes 6 - m8 nuts 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt modules (high voltage insulated gate bipolar transistor modules)
mar. 2003 mitsubishi hvigbt modules CM1200HC-66H high power switching use insulated type v v v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 125 c v cc = 1650v, i c = 1200a, v ge = 15v v cc = 1650v, i c = 1200a v ge1 = v ge2 = 15v r g = 1.6 ? resistive load switching operation i e = 1200a, v ge = 0v i e = 1200a, die / dt = ?400a / s (note 1) junction to case, igbt part junction to case, fwdi part case to fin, conductive grease applied i c = 120ma, v ce = 10v i c = 1200a, v ge = 15v (note 4) v ce = 10v v ge = 0v collector cutoff current gate-emitter threshold voltage gate-leakage current collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time emitter-collector voltage reverse recovery time reverse recovery charge thermal resistance contact thermal resistance collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage mounting torque mass v ge = 0v v ce = 0v dc, t c = 100 c pulse (note 1) pulse (note 1) t c = 25 c, igbt part charged part to base plate, rms, sinusoidal, ac 60hz 1min. main terminals screw m8 mounting screw m6 auxiliary terminals screw m4 typical value collector current emitter current 3300 20 1200 2400 1200 2400 14700 ?0 ~ +150 ?0 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 maximum ratings (tj = 25 c) symbol item conditions unit ratings v v a a a a w c c v n? n? n? kg v ces v ges i c i cm i e (note 2) i em (note 2) p c (note 3) t j t stg v iso min typ max 15 0.5 4.29 1.60 2.00 2.50 1.00 3.64 1.40 0.0085 0.017 ma a nf nf nf c s s s s v s c k/w k/w k/w 3.30 3.60 180 18.0 5.4 8.6 2.80 400 0.006 i ces i ges c ies c oes c res q g t d (on) t r t d (off) t f v ec (note 2) t rr (note 2) q rr (note 2) r th(j-c)q r th(j-c)r r th(c-f) electrical characteristics (tj = 25 c) symbol item conditions v ge(th) v ce(sat) limits unit 6.0 4.5 note 1. pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 2. i e , v ec , t rr , q rr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 3. junction temperature (t j ) should not increase beyond 150 c. 4. pulse width and repetition rate should be such as to cause negligible temperature rise. 7.5 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt modules (high voltage insulated gate bipolar transistor modules)
mar. 2003 mitsubishi hvigbt modules CM1200HC-66H high power switching use insulated type performance curves 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules 2400 800 400 0 20 0 4812 1200 16 2000 1600 0 8 6 4 2 2400 0 400 800 1600 1200 2000 0 400 800 1200 1600 2000 2400 10 0 2468 t j = 25 c v ge = 14v v ge = 13v v ge = 12v v ge = 11v v ge = 10v v ge = 9v v ge = 8v v ge = 15v v ge = 20v v ce = 10v t j = 25 c t j = 125 c v ge = 15v t j = 25 c t j = 125 c output characteristics ( typical ) collector current i c ( a ) transfer characteristics ( typical ) collector current i c ( a ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) collector-emitter saturation voltage characteristics ( typical ) collector-emitter voltage v ce ( v ) 020 16 12 8 4 10 8 6 4 2 0 collector-emitter saturation voltage v ce(sat) ( v ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage characteristics ( typical ) i c = 2400a i c = 1200a i c = 480a 2400 0 400 800 1600 1200 2000 free-wheel diode forward characteristics ( typical ) emitter-collector voltage v ec ( v ) emitter current i e ( a ) 8 6 4 2 0 t j = 25 c t j = 125 c 10 1 23 10 1 5710 0 23 5710 1 23 5710 2 10 3 7 5 3 2 10 2 7 5 3 2 7 5 3 2 10 0 capacitance characteristics ( typical ) capacitance c ies , c oes , c res ( nf ) collector-emitter voltage v ce ( v ) v ge = 0v, t j = 25 c c ies, c oes : f = 100khz c res : f = 1mhz c oes c res c ies
mar. 2003 mitsubishi hvigbt modules CM1200HC-66H high power switching use insulated type 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules 7 5 3 2 710 2 10 1 7 23 5710 3 23 5 5 5 3 2 10 0 5 t d(off) v cc = 1650v, v ge = 15v r g = 1.6 ? , t j = 125 c inductive load t d(on) t f t r 10 2 7 5 3 2 10 1 7 5 3 2 10 0 10 1 7 5 3 2 half-bridge switching time characteristics ( typical ) switching times ( s ) collector current i c ( a ) transient thermal impedance characteristics normalized transient thermal impedance z th(j c) time ( s ) 10 3 10 2 10 1 10 0 10 1 23 57 23 57 23 57 23 57 single pulse t c = 25 c r th(j c)q = 0.0085k/ w r th(j c)r = 0.017k/ w 7 5 3 2 10 1 10 2 25710 2 325710 3 325710 4 3 10 1 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 1 10 2 7 5 3 2 10 4 7 5 3 2 10 3 reverse recovery characteristics of free-wheel diode ( typical ) reverse recovery time t rr ( s ) emitter current i e ( a ) reverse recovery current i rr ( a ) v cc = 1650v, t j = 125 c inductive load v ge = 15v, r g = 1.6 ? t rr i rr 20000 15000 0 5000 10000 20 16 12 8 4 0 gate charge characteristics ( typical ) gate-emitter voltage v ge ( v ) gate charge q g ( nc ) v cc = 1650v i c = 1200a 6.0 5.0 4.0 3.0 2.0 1.0 0 0 5 10 15 20 gate resistance ( ? ) half-bridge switching energy characteristics ( typical ) switching energy ( j/p ) v cc = 1650v, i c = 1200a, v ge = 15v, tj = 125 c, inductive load e on e off e rec 0 4.0 3.0 2.0 1.0 5.0 half-bridge switching energy characteristics ( typical ) current ( a ) switching energy ( j/p ) 0 400 800 2400 2000 1600 1200 v cc = 1650v, v ge = 15v, r g = 1.6 ? , tj = 125 c, inductive load e on e off e rec
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