2004, 2008 features ? the device is an ideal choice fo r low noise, high-gain amplification nf = 0.8 db typ., g a = 11.5 db typ. @ v ce = 1 v, i c = 3 ma, f = 2 ghz ? high breakdown voltage technology for sige tr. adopted: v ceo (absolute maximum ratings) = 5.0 v ? 3-pin super lead-less minimold (m33, 0804 pkg) package ordering information part number order number package quantity supplying form nesg2046m33 nesg2046m33-a 50 pcs (non reel) ? 8 mm wide embossed taping nesg2046m33-t3 NESG2046M33-T3-A 3-pin super lead-less minimold (m33, 0804 pkg) (pb-free) 10 kpcs/reel ? pin 2 (base) face the perforation side of the tape remark to order evaluation samples, contact your nearby sales office. unit sample quantity is 50 pcs. absolute maximum ratings (t a = +25 c) parameter symbol ratings unit collector to base voltage v cbo 13 v collector to emitter voltage v ceo 5 v emitter to base voltage v ebo 1.5 v collector current i c 40 ma total power dissipation p tot note 130 mw junction temperature t j 150 c storage temperature t stg ? 65 to +150 c note mounted on 1.08 cm 2 1.0 mm (t) glass epoxy pcb the mark shows major revised points. the revised points can be easily s earched by copying an "" in the pdf file and specifying it in the "find what:" field. data sheet caution observe precautions when handling because these devices are sensitive to electrostatic discharge. the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. npn silicon germanium rf transistor nesg2046m33 npn sige rf transistor for low noise, high-gain amplification 3-pin super lead-less minimold (m33, 0804 pkg) document no. pu10464ej02v0ds (2nd edition) date published october 2008 ns printed in japan
electrical characteristics (t a = +25 c) parameter symbol test conditions min. typ. max. unit dc characteristics collector cut-off current i cbo v cb = 5 v, i e = 0 ma ? ? 100 na emitter cut-off current i ebo v eb = 0.5 v, i c = 0 ma ? ? 100 na dc current gain h fe note 1 v ce = 1 v, i c = 2 ma 140 180 220 ? rf characteristics gain bandwidth product f t v ce = 1 v, i c = 15 ma, f = 2 ghz 15 18 ? ghz insertion power gain ? s 21e ? 2 v ce = 1 v, i c = 15 ma, f = 2 ghz 11 13 ? db noise figure nf v ce = 1 v, i c = 3 ma, f = 2 ghz, z s = z sopt , z l = z lopt ? 0.8 1.5 db associated gain g a v ce = 1 v, i c = 3 ma, f = 2 ghz, z s = z sopt , z l = z lopt 9.5 11.5 ? db reverse transfer capacitance c re note 2 v cb = 1 v, i e = 0 ma, f = 1 mhz ? 0.2 0.4 pf notes 1. pulse measurement: pw 350 s, duty cycle 2% 2. collector to base capacit ance when the emitter grounded h fe classification rank fb marking t7 h fe value 140 to 220 data sheet pu10464ej02v0ds 2 nesg2046m33
typical characteristics (t a = +25 c, unless otherwise specified) f = 1 mhz 0.30 0.25 0.20 0.15 0.10 0.05 02468 12 v ce = 1 v 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 v ce = 2 v 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 300 250 200 150 130 100 50 0 25 50 75 100 125 150 50 30 40 20 10 01234 5 6 i b = 30 a 300 a 270 a 240 a 180 a 120 a 90 a 60 a 150 a 210 a 10 mounted on glass epoxy pcb (1.08 cm 2 1.0 mm (t) ) total power dissipation p tot (mw) ambient temperature t a ( c) total power dissipation vs. ambient temperature reverse transfer capacitance c re (pf) collector to base voltage v cb (v) reverse transfer capacitance vs. collector to base voltage collector current i c (ma) base to emitter voltage v be (v) collector current vs. base to emitter voltage collector current i c (ma) base to emitter voltage v be (v) collector current vs. base to emitter voltage collector current i c (ma) collector to emitter voltage v ce (v) collector current vs. collector to emitter voltage remark the graphs indicate nominal characteristics. data sheet pu10464ej02v0ds 3 nesg2046m33
1 000 100 10 1 0.1 10 100 v ce = 1 v 1 000 100 10 1 0.1 10 100 v ce = 2 v v ce = 1 v f = 2 ghz 30 5 10 15 20 25 0 10 1 100 v ce = 2 v f = 2 ghz 30 5 10 15 20 25 0 10 1 100 v ce = 1 v i c = 15 ma |s 21e | 2 msg mag msg mag 35 30 25 20 15 10 5 0 0.1 1 10 100 v ce = 2 v i c = 15 ma |s 21e | 2 msg mag msg mag 35 30 25 20 15 10 5 0 0.1 1 10 100 dc current gain h fe collector current i c (ma) dc current gain vs. collector current dc current gain h fe collector current i c (ma) dc current gain vs. collector current gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) remark the graphs indicate nominal characteristics. data sheet pu10464ej02v0ds 4 nesg2046m33
v ce = 1 v f = 1 ghz mag msg |s 21e | 2 30 20 15 10 5 0 1 10 100 v ce = 1 v f = 3 ghz msg mag |s 21e | 2 20 15 10 5 0 1 10 100 v ce = 1 v f = 2 ghz |s 21e | 2 25 20 10 15 5 0 1 10 100 25 mag msg v ce = 1 v f = 5 ghz msg mag |s 21e | 2 15 10 5 0 1 10 100 v ce = 2 v f = 1 ghz mag msg |s 21e | 2 30 20 15 10 5 0 1 10 100 25 v ce = 2 v f = 2 ghz |s 21e | 2 25 20 10 15 5 0 1 10 100 mag msg collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) remark the graphs indicate nominal characteristics. data sheet pu10464ej02v0ds 5 nesg2046m33
v ce = 2 v f = 3 ghz mag msg |s 21e | 2 20 15 10 5 0 1 10 100 v ce = 2 v f = 5 ghz |s 21e | 2 msg 15 10 5 0 1 10 100 collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum stable power gain msg (db) remark the graphs indicate nominal characteristics. s-parameters s-parameters and noise parameters are provided on our web site in a format (s2p) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. click here to download s-parameters. [rf and microwave] [device parameters] url http://www.necel.com/microwave/en/ data sheet pu10464ej02v0ds 6 nesg2046m33
package dimensions 3-pin super lead-less minimold (m33, 0804 pkg) (unit: mm) 0.15 0.57 0.285 0.125 0.440.05 1 2 3 (bottom view) 0.15 0.840.05 0.125 0.15 0.640.05 0.11 0.4 max. t7 pin connections 1. emitter 2. base 3. collector data sheet pu10464ej02v0ds 7 nesg2046m33
the information in this document is current as of october, 2008. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec electronics data sheets or data books, etc., for the most up-to-date specifications of nec electronics products. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec electronics. nec electronics assumes no responsibility for any errors that may appear in this document. nec electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec electronics products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec electronics or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. nec electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec electronics endeavors to enhance the quality, reliability and safety of nec electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. nec electronics products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to nec electronics products developed based on a customer- designated "quality assurance program" for a specific application. the recommended applications of an nec electronics product depend on its quality grade, as indicated below. customers must check the quality grade of each nec electronics product before using it in a particular application. the quality grade of nec ele ctronics pr oducts is "standard" unless otherwise expressly specified in nec electronics data sheets or data books, etc. if customers wish to use nec electronics products in applications not intended by nec electronics, they must contact an nec electronics sales representative in advance to determine nec electronics' willingness to support a given application. (note) ? ? ? ? ? ? m8e 02. 11-1 (1) (2) "nec electronics" as used in this statement means nec electronics corporation and also includes its majority-owned subsidiaries. "nec electronics products" means any product developed or manufactured by or for nec electronics (as defined above). computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. "standard": "special": "specific": nesg2046m33
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