rev.2.00, mar.01.20 05, page 1 of 7 cr08as-12 thyristor low power use rej03g0349-0200 rev.2.00 mar.01.2005 features ? i t (av) : 0.8 a ? v drm : 600 v ? i gt : 100 a ? non-insulated type ? glass passivation type outline 2, 4 1 3 1. cathode 2. anode 3. gate 4. anode plzz0004cb-a (package name: sot-89) 2 4 1 3 applications solid state relay, strobe flas her, igniter, and hybrid ic maximum ratings voltage class parameter symbol 12 (mark af) unit repetitive peak reverse voltage v rrm 600 v non-repetitive peak reverse voltage v rsm 720 v dc reverse voltage v r (dc) 480 v repetitive peak off-state voltage note1 v drm 600 v dc off-state voltage note1 v d (dc) 480 v
cr08as-12 rev.2.00, mar.01.20 05, page 2 of 7 parameter symbol ratings unit conditions rms on-state current i t (rms) 1.26 a average on-state current i t (av) 0.8 a commercial frequency, sine half wave 180 conduction, ta = 51c note2 surge on-state current i tsm 10 a 60hz sine half wave 1 full cycle, peak value, non-repetitive i 2 t for fusing i 2 t 0.42 a 2 s value corresponding to 1 cycle of half wave 60hz, surge on-state current peak gate power dissipation p gm 0.5 w average gate power dissipation p g (av) 0.1 w peak gate forward voltage v fgm 6 v peak gate reverse voltage v rgm 6 v peak gate forward current i fgm 0.3 a junction temperature tj ? 40 to +125 c storage temperature tstg ? 40 to +125 c mass ? 48 mg typical value notes: 1. with gate to cathode resistance r gk = 1 k ? . electrical characteristics parameter symbol min. typ. max. unit test conditions repetitive peak reverse current i rrm ? ? 0.5 ma tj = 125c, v rrm applied, r gk = 1 k ? repetitive peak off-state current i drm ? ? 0.5 ma tj = 125c, v drm applied, r gk = 1 k ? on-state voltage v tm ? ? 1.5 v ta = 25c, i tm = 2.5 a, instantaneous value gate trigger voltage v gt ? ? 0.8 v tj = 25c, v d = 6 v, i t = 0.1 a note4 gate non-trigger voltage v gd 0.2 ? ? v tj = 125c, v d = 1/2 v drm , r gk = 1 k ? gate trigger current i gt 1 ? 100 note3 a tj = 25c, v d = 6 v, i t = 0.1 a note4 holding current i h ? 1.5 3 ma tj = 25c, v d = 12 v, r gk = 1 k ? thermal resistance r th (j-a) ? ? 65 c/w junction to ambient note2 notes: 2. soldering with ceramic plate (25 mm 25 mm t0.7 mm). 3. if special values of i gt are required, choose item d or e from t hose listed in the tabl e below if possible. item a b c d e i gt ( a) 1 to 30 20 to 50 40 to 100 1 to 50 20 to 100 the above values do not include the current flowing through the 1 k ? resistance between the gate and cathode. 4. i gt , v gt measurement circuit. 3v dc i gs i gt 6v dc 60 ? v gt 2 1 t ut 1k ? ? )
cr08as-12 rev.2.00, mar.01.20 05, page 3 of 7 performance curves maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) maximum transient thermal impedance characteristics (junction to ambient) transient thermal impedance (c/w) time (s) gate trigger voltage vs. junction temperature gate trigger voltage (v) junction temperature (c) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature (c) gate characteristics 100 (%) gate trigger current (tj = tc) gate trigger current (tj = 25c) 10 0 23 5710 1 4 2 23 57 10 2 44 6 8 10 3 1 5 7 9 0 5 01 4 23 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ?1 10 2 10 ?2 10 0 10 1 7 5 3 2 10 ?1 7 5 3 2 10 0 7 5 3 2 7 5 3 2 10 ?2 23 57 23 57 10 1 23 57 10 2 23 57 23 10 ?1 v gt = 0.8v i gt = 100 a (tj = 25c) p gm = 0.5w v gd = 0.2v i fgm = 0.3a 160 60 ?20 ?40 0 20 40 80 100 120 140 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 1.0 0.8 0.7 0.6 0.3 0.4 0.1 0 120 ?40 ?20 20 80 0.2 0.5 0.9 060 40 100 23 10 0 5710 1 23 5710 2 23 5710 3 10 1 23 10 ?3 5710 ?2 23 5710 ?1 23 5710 0 10 3 7 5 3 2 10 2 7 5 3 2 7 5 3 2 10 0 ta = 25c p g(av) = 0.1w typical example distribution typical example 25 25 t0.7 aluminum board v fgm = 6v
cr08as-12 rev.2.00, mar.01.20 05, page 4 of 7 maximum average power dissipation (single-phase half wave) average power dissipation (w) average on-state current (a) average on-state current (a) average on-state current (a) allowable ambient temperature vs. average on-state current (single-phase full wave) allowable ambient temperature vs. average on-state current (single-phase half wave) allowable ambient temperature vs. average on-state current (single-phase half wave) ambient temperature (c) ambient temperature (c) ambient temperature (c) average on-state current (a) average on-state current (a) maximum average power dissipation (rectangular wave) maximum average power dissipation (single-phase full wave) average power dissipation (w) average power dissipation (w) average on-state current (a) 1.6 1.2 0.6 0.4 0.2 1.4 1.0 0.8 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 = 30 60 120 90 180 160 120 60 40 20 140 100 80 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 = 30 60 120 90 180 160 120 60 40 20 140 100 80 0 0.8 0 0.2 0.4 0.6 0.7 0.1 0.3 0.5 65c/w 90c/w r th(j?a) = 200c/w 1.6 1.2 0.6 0.4 0.2 1.4 1.0 0.8 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 = 30 60 120 90 180 1.6 1.2 0.6 0.4 0.2 1.4 1.0 0.8 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 = 30 60 120 90 180 270 dc 160 120 60 40 20 140 100 80 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 = 30 120 90 180 60 360 resistive, inductive loads 25 25 t0.7 aluminum board 25 25 t0.7 aluminum board 360 resistive, inductive loads natural convection 360 resistive, inductive loads natural convection = 180 360 resistive loads 360 resistive loads natural convection 360 resistive, inductive loads
cr08as-12 rev.2.00, mar.01.20 05, page 5 of 7 breakover voltage vs. gate to cathode resistance gate to cathode resistance (k ? ) 100 (%) breakover voltage (r gk = rk ? ) breakover voltage (r gk = 1k ? ) breakover voltage vs. junction temperature junction temperature (c) 100 (%) breakover voltage (tj = tc) breakover voltage (tj = 25c) holding current vs. junction temperature holding current (ma) junction temperature (c) holding current vs. gate to cathode resistance gate to cathode resistance (k ? ) 100 (%) holding current (r gk = rk ? ) holding current (r gk = 1k ? ) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage (dv/dt = vv/ s) breakover voltage (dv/dt = 1v/ s) 160 120 60 40 20 140 100 80 0 160 ?40 0 40 80 120 140 ?20 20 60 100 allowable ambient temperature vs. average on-state current (rectangular wave) ambient temperature (c) average on-state current (a) 160 120 60 40 20 140 100 80 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 dc = 30 120 180 270 60 90 25 25 t0.7 aluminum board 360 resistive, inductive loads natural convection 23 10 ?1 5710 0 23 5710 1 23 5710 2 0 80 100 120 40 60 20 23 10 0 5710 1 23 5710 2 23 5710 3 160 0 80 100 120 140 40 60 20 23 10 ?1 5710 0 23 5710 1 23 5710 2 500 0 300 400 100 200 60 ?20 ?40 ?60 0 20 40 80 100 120 140 10 1 7 5 3 2 10 0 7 5 3 2 10 ?1 7 5 3 2 10 ?2 # 1 typical example r gk = 1k ? typical example tj = 125c tj = 125c r gk = 1k ? typical example r gk = 1k ? i gt (25c) = 35 a typical example distribution tj = 25c typical example i gt (25c) i h (1k ? ) 25 a0.9ma # 1
cr08as-12 rev.2.00, mar.01.20 05, page 6 of 7 holding current vs. gate trigger current holding current (ma) gate trigger current ( a) 4.0 0 2.0 2.5 3.0 3.5 1.0 1.5 0.5 10 0 23 10 ?1 5710 0 23 5710 1 23 5710 2 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ?1 40 30 15 10 5 35 25 20 0 160 0 40 80 120 140 20 60 100 160 120 100 40 60 20 0 160 ?40 ?20 20 80 140 120 80 140 060 40 100 thermal impedance vs. board dimensions thermal resistance (c/w) board dimensions (mm) regular square one side 320 240 120 80 40 280 200 160 0 80 0 20 40 60 70 10 30 50 without epoxy plate 10 10 epoxy plate with copper foil 10 2 10 0 10 1 24 357 10 2 24 357 10 0 10 1 23 57 10 2 23 5 7 10 4 7 5 3 2 10 3 7 5 3 2 7 5 3 2 10 1 # 1 # 2 tj = 25c typical example turn-on time vs. gate current turn-on time ( s) gate current (ma) turn-off time vs. junction temperature turn-off time ( s) junction temperature (c) gate trigger current vs. gate current pulse width 100 (%) gate trigger current (tw) gate trigger current (dc) junction temperature (c) 100 (%) repetitive peak reverse voltage (tj = tc) repetitive peak reverse voltage (tj = 25c) gate current pulse width ( s) repetitive peak reverse voltage vs. junction temperature typical example v d = 100v r l = 47 ? r gk = 1k ? ta = 25c typical example distribution v d = 50v, v r = 50v i t = 2a, r gk = 1k ? tj = 25c typical example i gt (dc) 10 a 65 a # 1 # 2 t0.7 aluminum board
cr08as-12 rev.2.00, mar.01.20 05, page 7 of 7 package dimensions sc-62 0.48g mass[typ.] sot-89 plzz0004cb-a renesas code jeita package code package name unit: mm 4.6max 0.48max 0.58max 3.0 1.5 4.2max 0.8min 2.5 0.1 1.6 0.2 1.5 0.1 0.4 +0.03 ?0.05 order code lead form standard packing quantity standard order code standard order code example surface-mounted type stick 25 type name cr08as-12 surface-mounted type taping 3000 type name ? t +direction (1 or 2) +3 cr08as-12-t13 note : please confirm the specificat ion about the shipping in detail.
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