device is suitable for general purpose application. ds(on) AO6422 20v n-channel mosfet v ds = 20v i d = 5a (v gs = 4.5v) r ds(on) < 44m (v gs = 4.5v) r ds(on) < 55m (v gs = 2.5v) r ds(on) < 72m (v gs = 1.8v) general description the AO6422 uses advanced trench technology to provide excellent r , low gate charge and operation with gate voltages as low as 1.8v. this g d s d d g d s d top view 1 2 3 6 5 4 symbol 10 sec steady state v ds v gs 5 3.9 4.2 3 i dm 2.0 1.1 1.3 0.7 t j , t stg parameter symbol typ max t 10s 47.5 62.5 steady state 74 110 steady state r q jl 54 68 power dissipation a t a =25c v v i d gate-source voltage pulsed drain current b continuous drain current a drain-source voltage 20 absolute maximum ratings t a =25c unless otherwise noted junction and storage temperature range t a =70c units parameter t a =25c t a =70c maximum junction-to-lead c c/w thermal characteristics units maximum junction-to-ambient a c/w maximum junction-to-ambient a 8 c/w r q ja c -55 to 150 30 a p d w features www.freescale.net.cn 1 / 4
symbol min typ max units bv dss 20 v 1 t j = 55c 5 i gss 100 na v gs(th) 0.4 0.65 1 v i d(on) 30 a 35 44 t j =125c 48 60 43 55 m w 55 72 m w g fs 14 s v sd 0.8 1 v i s 2 a c iss 450 560 pf c oss 74 pf c rss 52 pf r g 4.9 7.5 w q g (4.5v) 6.2 8.2 nc q gs 0.4 nc q gd 1.3 nc t d(on) 4.5 ns drain-source breakdown voltage on state drain current i d = 250 m a, v gs = 0v v gs = 4.5v, v ds = 5v v gs = 4.5v, i d = 5.0a reverse transfer capacitance zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss m a gate threshold voltage v ds = v gs i d = 250 m a v ds = 20v, v gs = 0v v ds = 0v, v gs = 8v m w i s = 1a,v gs = 0v v ds = 5v, i d = 5.0a v gs = 2.5v, i d = 4.5a v gs = 1.8v, i d = 3.5a turn-on delaytime switching parameters total gate charge gate source charge gate drain charge v gs = 4.5v, v ds = 10v, i d = 5a dynamic parameters maximum body-diode continuous current gate resistance v gs =0v, v ds =0v, f=1mhz v gs =0v, v ds =10v, f=1mhz input capacitance output capacitance t d(on) 4.5 ns t r 6 ns t d(off) 33 ns t f 7.1 ns t rr 13 17 ns q rr 3.3 nc body diode reverse recovery time body diode reverse recovery charge i f =5a, di/dt=100a/ m s i f =5a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =4.5v, v ds =10v, r l =2 w , r gen =3 w turn-off fall time turn-on delaytime a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a = 25 c. in any given application depends on the user's specifi c board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using t 300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. rev2: feb. 2012 AO6422 20v n-channel mosfet www.freescale.net.cn 2 / 4
typical electrical and thermal characteristics i f =-6.5a, di/dt=100a/ m s 0 5 10 15 20 25 30 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics 3v 4.5v 2v 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2 i d (a) v gs (volts) figure 2: transfer characteristics 25 c 125 c v ds = 5v 30 38 46 54 62 70 0 3 6 9 12 15 r ds(on) (m w w w w ) v gs = 4.5v v gs = 2.5v v gs = 1.8v 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance v gs =1.5v v gs = 4.5v i d = 5a 2.5v i f =-6.5a, di/dt=100a/ m s functions and reliability without notice. 30 0 3 6 9 12 15 i d (a) figure 3: on-resistance vs. drain current and gate voltage 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature 20 40 60 80 100 120 1 2 3 4 5 6 7 8 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage i d = 5.0a 25 c 125 c AO6422 20v n-channel mosfet www.freescale.net.cn 3 / 4
typical electrical and thermal characteristics i f =-6.5a, di/dt=100a/ m s 0 1 2 3 4 5 0 1 2 3 4 5 6 7 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) 0.01 0.1 1 10 100 0.1 1 10 100 i d (amps) 100 m s 10ms 1ms 100mss 10s dc r ds(on) limited t j(max) =150 c t a =25 c 10 m s v ds = 10v i d = 5a t j(max) =150 c t a =25 c i f =-6.5a, di/dt=100a/ m s 1 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction- to-ambient (note e) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance(note e) 0.01 0.1 1 10 100 v ds (volts) figure 9: maximum forward biased safe operating area (note e) t a =25 c single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =110 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse AO6422 20v n-channel mosfet www.freescale.net.cn 4 / 4
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