6 lake street, lawrence, ma 01841 1-800-446-1158 / (978)-794-1666 / (978) fax: (978) 689-0803 page 1 of 2 maximum ratings ratings symbol value units collector-emitter voltage v ceo 80 vdc collector-base voltage v cbo 140 vdc emitter-base voltage v ebo 7.0 vdc collector current i c 1.0 adc total power dissipation @ t a = +25 0 c (1) 2n3019; 2n3019s 2n3057a 2N3700 2N3700ub @ t c = +25 0 c (2) 2n3019; 2n3019s 2n3057a 2N3700 2N3700ub p t 0.8 0.5 0.5 0.5 5.0 1.8 1.8 1.16 w w operating & storage jct temp range t j , t stg -65 to +175 0 c thermal characteristics characteristics symbol max. unit thermalresistance,junction-to- ambient 2n3019, s all other devices r ja 175 325 0 c/w 0 c/w 1) derate linearly 5.7 mw/ 0 c above t a = +60 0 c. 2) derate linearly 28.6 mw/ 0 c for type 2n3019 and 2n3019s; 10.3 mw/ 0 c for types 2n3057a, 2N3700, & 2N3700ub for t c +25 0 c. 3) derate linearly at 3.08 mw/ 0 c above t a = +37.5 0 c electrical characteristics characteristics symbol min. max. unit off characteristics collector-emitter breakdown voltage i c = 30 madc v (br) ceo 80 vdc technical data 2n3019, 2n3019s to-39 (to-205ad) 2N3700 to- 18 (to-206aa) 2n3057a to-46 (to-206ab) 2N3700ub 3 pin surface mount 2n3019 jan, jtx, jtxv, jans 2n3019s jan, jtx, jtxv, jans 2n3057a jan, jtx, jtxv, jans 2N3700 jan, jtx, jtxv, jans 2N3700ub jan, jtx, jtxv, jans processed per mil-prf-19500/391 low - power npn silicon transistors mil-prf qml devices
6 lake street, lawrence, ma 01841 1-800-446-1158 / (978)-794-1666 / (978) fax: (978) 689-0803 page 2 of 2 2n3019, 2n3019s, 2n3057a, 2N3700, 2N3700ub jan series electrical characteristics (con?t) characteristics symbol min. max. unit off characteristics (con?t) collector-emitter cutoff current v ce = 90 vdc i ces 10 adc emitter-base cutoff current v eb = 5.0 vdc v eb = 7.0 vdc i ebo 10 10 adc adc collector-base cutoff current v cb = 140 vdc i cbo 10 adc on characteristics (1) forward-current transfer ratio i c = 150 madc, v ce = 10 vdc i c = 0.1 madc, v ce = 10 vdc i c = 10 madc, v ce = 10 vdc i c = 500 madc, v ce = 10 vdc i c = 1.0 adc, v ce = 10 vdc h fe 100 50 90 50 15 300 200 200 collector-emitter saturation voltage i c = 150 madc, i b = 15 madc i c = 500 madc, i b = 50 madc v ce(sat) 0.2 0.5 vdc base-emitter saturation voltage i c = 150 madc, i b = 15 madc v be(sat) 1.1 vdc dynamic characteristics small-signal short-circuit forward current transfer ratio i c = 1.0 madc, v ce = 5.0 vdc, f = 1.0 khz h fe 80 400 magnitude of small-signal short-circuit forward current transfer ratio i c = 50 madc, v ce = 10 vdc, f = 20 mhz ? h fe ? 5.0 20 output capacitance v cb = 10 vdc, i e = 0, 100 khz f 1.0 mhz c obo 12 pf input capacitance v eb = 0.5 vdc, i c = 0, 100 khz f 1.0 mhz c ibo 60 pf noise figure v ce = 10 vdc, i c = 100 adc, rg = 1 k ? :; power bandwith =200 hz nf 4 db collector-base time constant i c = 10 madc, v cb = 10 vdc, f = 79.8 mhz r 1 b,c c 400 ps safe operating area dc tests t c = 25 0 c, 1 cycle, t = 10 ms test 1 v ce = 10 vdc 2n3019, 2n3019s i c = 500 madc 2n3057a, 2N3700, 2N3700ub i c = 180 madc test 2 v ce = 40 vdc 2n3019, 2n3019s i c = 125 madc 2n3057a, 2N3700, 2N3700ub i c = 45 madc test 3 v ce = 80 vdc 2n3019, 2n3019s i c = 60 madc 2n3057a, 2N3700, 2N3700ub i c = 22.5 madc (1) pulse test: pulse width = 300 s, duty cycle 2.0%.
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