tqp3m9009 high linearity lna gain block data sheet: rev g 12/27/11 - 1 of 10 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? applications 3-pin sot-89 package ? repeaters ? mobile infrastructure ? lte / wcdma / edge / cdma ? general purpose wireless product features functional block diagram ? 50-4000 mhz ? 21.8 db gain @ 1.9 ghz ? +39.5 dbm output ip3 ? 1.3 db noise figure @ 1.9 ghz ? 50 ohm cascadable gain block ? unconditionally stable ? high input power capability ? +5v single supply, 125 ma current ? sot-89 package rf in gnd rf out gnd 1 2 3 4 general description pin configuration the tqp3m9009 is a cascadable, high linearity gain bloc k amplifier in a low-cost surface-mount package. at 1.9 ghz, the amplifier is targeted to provide 21.8 db gain, +39.5 dbm oip3, and 1.3 db noise figure while only drawing 125 ma current. the device is housed in a leadfree/green/rohs-compliant industry-standard sot-89 p ackage using a nipdau pl ating to eliminate the possibility of tin whiskering. the tqp3m9009 has the benefit of having high gain across a broad range of frequencies while also providing very low noise. this allows the device to be used in both receiver and transmitter chains for high performance systems. the amplifier is internally matched using a high performance e-phemt process and only requires an external rf choke and bl ocking/bypass capacitors fo r operation from a single +5v supply. the internal active b ias circuit also enables stable operation over bias an d temperature variations. the tqp3m9009 covers the 0.05-4 ghz frequency ban d and is targeted for wireless infrastructure or othe r applications requiring high linearity and/or low noise figure. ordering information part no. description tqp3m9009 high linearity lna gain block tqp3m9009-pcb_if tqp3m9009 evb 0.05-0.5 ghz tqp3m9009-pcb_rf tqp3m9009 evb 0.5-4 ghz standard t/r size = 1000 pieces on a 7? reel. pin # symbol 1 rf input 3 rf output / vcc 2, 4 ground
tqp3m9009 high linearity lna gain block data sheet: rev g 12/27/11 - 2 of 10 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? specifications absolute maximum ratings parameter rating storage temperature -65 to +150 o c rf input power,cw,50 ? , t=25oc +23 dbm device voltage,v dd +7 v reverse device voltage -0.3 v operation of this device outsi de the parameter ranges given above may cause permanent damage. recommended operating conditions parameter min typ max units v dd +3 +5 +5.25 v t(case) -40 85 o c tj (for>10 6 hours mttf) 190 o c electrical specifi cations are measured at sp ecified test conditions. specifications are not guarantee d over all recommended operating conditions. electrical specifications test conditions unle ss otherwise noted: +25oc, +5v vsupply, 50 ? system. parameter conditions min typical max units operational frequency range 50 4000 mhz test frequency 1900 mhz gain 20 21.8 23 db input return loss 13 db output return loss 14 db output p1db +22 dbm output ip3 see note 1. +36.5 +39.5 dbm noise figure 1.3 db vdd +5 v current, idd 125 150 ma thermal resistance (jnc to case) jc 34 o c/w n otes 1. oip3 measured with two tones at an output power of +3 dbm / to ne separated by 1 mhz. the supp ression on the largest im3 product is used to calculate the oip3 using 2:1 rule.
tqp3m9009 high linearity lna gain block data sheet: rev g 12/27/11 - 3 of 10 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? device characterization v dd = +5 v, i dd = 125 ma, t = +25 c, calib rated to device leads freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 -16.66 -149.04 27.36 171.55 -29.65 1.22 -13.56 179.33 100 -14.86 -157.51 27.12 166.00 -29.37 -1.50 -13.09 174.97 200 -13.56 -165.34 26.70 156.36 -29.26 -5.67 -12.78 159.12 400 -12.51 -173.30 26.14 137.87 -29.42 -14.20 -13.06 133.47 600 -11.37 178.88 25.53 119.50 - 29.63 -21.58 -13.69 110.30 800 -10.40 169.81 24.85 102.41 - 30.03 -28.26 -14.46 86.04 1000 -9.76 160.89 24.16 86.01 -30.28 -35.35 -15.64 62.04 1200 -9.31 150.48 23.40 70.36 -30.96 -40.26 -16.58 37.31 1400 -8.84 139.39 22.82 55.48 -31.05 -46.78 -17.14 11.49 1600 -8.51 128.52 22.31 41.20 -31.76 -51.29 -17.34 -12.33 1800 -8.33 116.42 21.66 27.52 -32.00 -58.53 -17.04 -33.75 2000 -8.16 104.69 21.23 13.67 -32.50 -63.59 -16.80 -57.05 2200 -8.01 92.36 20.82 0.68 -33.07 -66.83 -16.28 -76.12 2400 -8.06 79.88 20.33 -13.12 -33.72 -72.40 -15.48 -95.17 2600 -8.13 66.42 20.02 -26.88 -34.02 -77.18 -14.43 -113.34 2800 -8.14 51.54 19.74 -41.54 -34.42 -81.16 -13.66 -128.34 3000 -8.00 35.02 19.52 -55.82 -35.18 -86.54 -12.61 -142.44 3200 -8.13 17.50 19.28 -71.00 -36.25 -88.92 -11.99 -157.55 3400 -7.86 -3.63 19.10 -87.06 -36.83 -94.66 -11.31 -167.91 3600 -7.65 -26.69 18.91 -103.86 -37.20 -96.43 -10.62 -179.13 3800 -7.20 -52.39 18.59 -121.75 -38.27 -102.65 -10.05 170.24 4000 -6.39 -79.22 18.17 -140.35 -39.25 -102.05 -9.83 159.78
tqp3m9009 high linearity lna gain block data sheet: rev g 12/27/11 - 4 of 10 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? application circuit configuration ? bill of material reference designation frequency (mhz) tqp3m9009-pcb_if tqp3m9009-pcb_rf 50 - 500 500 - 4000 q1 tqp3m9009 c2, c6 1000 pf 100 pf c1 0.01 uf 0.01 uf l2 330 nh 68 nh d1 do not place b1 0 ? notes: 1. performances can be optimized at frequency of interest by using recommended compone nt values shown in the table below. reference designation frequency (mhz) 500 2000 2500 3500 c2, c6 100 pf 22 pf 22 pf 22 pf l2 82 nh 22 nh 18 nh 15 nh n otes: 1. see pc board layout, page 8 for more information. 2. components shown on the silkscreen but not on the schematic are not used. 3. b1 (0 ? jumper) may be replaced with copper trace in the target application layout. 4. the recommended component values are depe ndent upon the frequency of operation. 5. all components are of 0603 size unl ess stated on the schematic.
tqp3m9009 high linearity lna gain block data sheet: rev g 12/27/11 - 5 of 10 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance 500-4000 mhz test conditions unless otherwise noted: +25oc, +5v, 125 ma, 50 ? system. the data shown below is measured on tqp3m9009-pcb_rf. notes: 1. oip3 measured with two tones at an output power of +3 dbm / to ne separated by 1 mhz. the suppr ession on the largest im3 product is used to calculate the oip3 using 2:1 rule. 2. noise figure data shown in the table above is measured on evaluation board which in cludes board losses of around 0.1 db @ 2 ghz . rf performance plots 16 20 24 28 500 1000150020002500300035004000 gain (db) frequency (mhz) gain vs. frequency over temp -40 c -20 c +25 c +85 c -20 -15 -10 -5 0 500 1000 1500 2000 2500 3000 3500 4000 s11 (db) frequency (mhz) s11 vs. frequency over temp +85 c +25 c -20 ? c -40 c -20 -15 -10 -5 0 500 1000 1500 2000 2500 3000 3500 4000 s22 (db) frequency (mhz) s22 vs. frequency over temp -40 c -20 ? c +25 c +85 c 0 1 2 3 4 500 1000 1500 2000 2500 3000 3500 4000 nf (db) frequency (mhz) noise figure vs. frequency over temp +85 c +25 c -40 c 25 30 35 40 45 024681012 oip3 (dbm) pout / tone (dbm) oip3 vs. pout / tone over temp freq = 1900 mhz, 1 mhz spacing +25 c +85 c -40 c 25 30 35 40 45 500 1000150020002500300035004000 oip3 (dbm) pout / tone (dbm) oip3 vs. frequency over temp 1 mhz spacing, 3 dbm/tone +25 c +85 c -40 c frequency mhz 500 900 1900 2700 3500 4000 gain db 25.7 24.7 21.8 20 18.9 18 input return loss db 12 12 13 13 8 6 output return loss db 11 13 14 10 10 11.5 output p1db dbm +22.5 +21.8 +22 +21.6 +21.8 +20.7 oip3 [1] dbm +41.4 +40.5 +39.5 +39 +37.9 +35.8 noise figure [2] db 0.9 0.9 1.3 1.7 2.1 2.4
tqp3m9009 high linearity lna gain block data sheet: rev g 12/27/11 - 6 of 10 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? 14 16 18 20 22 24 500 1000 1500 2000 2500 3000 3500 4000 p1db (db) frequency (mhz) p1db vs. frequency over temp -40 c +25 c +85 c 105 110 115 120 125 130 -40 -15 10 35 60 85 idd (ma) temperature ( ? c) idd vs. temperature cw signal 35 40 45 50 55 60 0 500 1000 1500 2000 2500 3000 3500 4000 oip2 (dbm) frequency (mhz) oip2 vs. frequency pout = 3 dbm / tone, 1 mhz spacing, +5v, +25c 25 30 35 40 45 34567 oip3 (dbm) vdd (volts) oip3 vs. vdd 1900mhz 900mhz pout/tone = 3dbm tone spacing = 1mhz 10 15 20 25 30 34567 p1db (dbm) vdd (volts) p1db vs. vdd 1900 mhz 900 mhz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 34567 nf (db) vdd (volts) noise figure vs. vdd 1900mhz 900mhz 105 110 115 120 125 34567 idd (ma) vdd (volts) idd vs vdd
tqp3m9009 high linearity lna gain block data sheet: rev g 12/27/11 - 7 of 10 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance 50-500 mhz test conditions unless otherwise noted: +25oc, +5v, 125 ma, 50 ? system. the data shown below is measured on tqp3m9009-pcb_if. notes: 1. oip3 measured with two tones at an output power of +3 dbm / to ne separated by 1 mhz. the suppr ession on the largest im3 product is used to calculate the oip3 using 2:1 rule. 2. noise figure data shown in the table above is measured on evaluation board which in cludes board losses of around 0.1 db @ 2 ghz . if performance plots 16 20 24 28 0 100 200 300 400 500 gain (db) frequency (mhz) gain vs. frequency over temp -40 c -20 ? c +25 c +85 c -20 -15 -10 -5 0 0 100 200 300 400 500 s11 (db) frequency (mhz) s11 vs. frequency over temp -40 c -20 ? c +25 c +85 c -20 -15 -10 -5 0 0 100 200 300 400 500 s22 (db) frequency (mhz) s22 vs. frequency over temp -40 c +20 c +25 c +85 ? c 0 1 2 3 4 0 100 200 300 400 500 nf (db) frequency (mhz) noise figure vs. frequency over temp +85 c +25 c -40 c 25 30 35 40 45 0 100 200 300 400 500 oip3 (dbm) pout / tone (dbm) oip3 vs. frequency over temp 1 mhz spacing, 3 dbm/tone -40 c +25 c +85 c 14 16 18 20 22 24 0 100 200 300 400 500 p1db (db) frequency (mhz) p1db vs. frequency over temp -40 c +25 c +85 c frequency mhz 70 100 200 500 gain db 27 26.8 26.4 25.8 input return loss db 12 13 13 13 output return loss db 11 11 12 13 output p1db dbm +21.6 +21.9 +21.9 +22.2 oip3 [1] dbm +37.6 +38.8 +39 +41.4 noise figure [2] db 1.4 1.3 0.9 0.9
tqp3m9009 high linearity lna gain block data sheet: rev g 12/27/11 - 8 of 10 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? pin configuration and description rf in gnd rf out gnd 1 23 4 pin symbol description 1 rf in input, matched to 50 ohms, external dc block is required. 2, 4 gnd rf/dc ground connection. 3 rfout / vdd output, matched to 50 ohms, external dc block is required and supply voltage applications information pc board layout top rf layer is .014? nelco n4000-13, ? r = 3.9, 4 total layers (0.062? thick) for mechanical rigidity. metal layers are 1-oz copper. 50 ohm microstrip line details: width = .029?, spacing = .035?. the pad pattern shown has been developed and tested for optimized assembly at triquint semiconductor. the pcb land pattern has been developed to accommodate lead and package tolerances. since surface mount processes vary from supplier to supplier, careful process development is recommended.
tqp3m9009 high linearity lna gain block data sheet: rev g 12/27/11 - 9 of 10 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? mechanical information package information and dimensions markings: part number: 3m9009 assembly code: ?y? is last digit of part manufacture year. ?xxx? is lot code. pcb mount pattern all dimensions are in millimeters (inches). angles are in degrees. notes: 1. ground / thermal vias are critical for the proper performance of this device. vias should use a .35mm (#80 / .0135?) diameter drill and have a final plated thru diameter of .25 mm (.010?). 2. add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. rf trace width depends upon the pc board material and construction. 4. use 1 oz. copper minimum. 3m9009 yxxx
tqp3m9009 high linearity lna gain block data sheet: rev g 12/27/11 - 10 of 10 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? product compliance information esd information esd rating: class 1a value: passes 250 v to < 500 v. test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iv value: passes 1000 v test: charged device model (cdm) standard: jedec standard jesd22-c101 solderability compatible with both lead-free (maximum 260c reflow temperature) and lead (maximum 245c reflow temperature) soldering processes. this part is compliant with eu 2002/95/ec rohs directive (restrictions on th e use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp-a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free msl rating moisture sensitivity level 3 at 260c per jedec standard ipc/jedec j-std-020. contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information abou t triquint: web: www.triquint.com tel: +1.503.615.9000 email: info-sales@tqs.com fax: +1.503.615.8902 for technical questions and application information: email: sjcapplications.engineering@tqs.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatso ever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and th e entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any part y any patent rights, licenses, or any other intellectual prope rty rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reason ably be expected to cause severe personal injury or death.
|
