View IRSF3011_6498819.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

features extremely rugged for harsh operating environments over-temperature protection over-current protection active drain-to-source clamp esd protection compatible with standard power mosfet low operating input current monolithic construction IRSF3011 fully protected power mosfet switch data sheet no.pd 6.039b applications solenoid driver dc motor driver description the IRSF3011 is a three-terminal monolithic smart power mosfet with built-in short circuit, over-temperature, esd and over-voltage pro- tections. the on-chip protection circuit latches off the power mosfet in case the drain current exceeds 7a or the junction temperature exceeds 165c and keeps it off until the input is driven low. the drain-to-source voltage is actively clamped at 55v (typical), prior to the avalanche of power mosfet, thus improving its performance during turn-off with inductive loads. the input current requirements are very low (300a) which makes the IRSF3011 compatible with most existing designs based on standard power mosfets. v ds(clamp) 50v r ds(on) 200m w i ds(sd) 5a t j(sd) 155c e as 200mj available packages IRSF3011l (sot-223) IRSF3011 (to-220ab) IRSF3011 block diagram
IRSF3011 2 absolute maximum ratings absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. (t c = 25c unless otherwise specified.) minimum maximum units test conditions v ds, max continuous drain to source voltage ? 50 v v in, max continuous input voltage -0.3 10 i ds continuous drain current ? self limited p d power dissipation ? 30 w t c 25c e as unclamped single pulse inductive energy ? 200 mj v esd1 electrostatic discharge voltage (human body model) ? 4000 v 1000pf. 1.5k w v esd2 electrostatic discharge voltage (machine model) ? 1000 200pf, 0 w t jop operating junction temperature range -55 self-limited t stg storage temperature range -55 175 c t l lead temperature (soldering, 10 seconds) ? 300 minimum typical maximum units test conditions v ds,clamp drain to source clamp voltage 50 54 ? v i ds = 10ma ?5662 i ds = 6a, t p = 700 s r ds(on) drain to source on resistance ? 155 200 v in = 5v, i ds = 2a ? 200 ? m w v in = 4v, i ds = 2a ? 115 ? v in = 10v, i ds = 2a i dss drain to source leakage current ? ? 10 v ds = 12v, v in = 0v ? ? 100 a v ds = 50v, v in = 0v ? 10 250 v ds =40v,v in =0v,t c =150c v th input threshold voltage 1.5 2.0 2.5 v v ds = 5v, i ds = 10ma i i,on input supply current (normal operation) ? 0.25 0.6 v in = 5v ? 0.35 0.85 ma v in = 10v i i, off input supply current (protection mode) ? 0.5 1.0 v in = 5v ? 0.6 1.2 v in = 10v v in, clamp input clamp voltage 10 10.8 ? v i in = 10ma v sd body-drain diode forward drop a ? 1.2 1.5 i ds = -9a, r in = 1k w static electrical characteristics (t c = 25c unless otherwise specified.) minimum typical maximum units test conditions r q jc junction to case ? ? 4 c/w to-220ab r q ja junction to ambient ? ? 62 r q jc junction to pcb ? ? 40 c/w sot-223 r q ja junction to pcb ??60 thermal characteristics
IRSF3011 3 notes: ? when mounted on a 1" square pcb (fr-4 or g10 material). for recommended footprint and soldering techniques, refer to international rectifier application note an-994. - e as is tested with a constant current source of 6a applied for 700s with v in = 0v and starting t j = 25c. ? input current must be limited to less than 5ma with a 1k w resistor in series with the input when the body-drain diode is forward biased. minimum typical maximum units test conditions v ds,clamp drain-to-source clamp voltage t.c. ? 18.2 ? i ds = 10ma v th input threshold voltage t.c. ? -2.7 ? mv/c v ds = 5v, i ds = 10ma v in,clamp input clamp voltage t.c. ? 7.0 ? i in = 10ma i ds(sd) over-current shutdown threshold t.c. ? -9.8 ? ma/c v in = 5v temperature coefficients of electrical characteristics (please see figures 3 through 14 for more data on thermal characteristics of other electrical parameters. minimum typical maximum units test conditions i ds(sd) over-current shutdown threshold 5 7 10 a vin = 5v t j(sd) over temperature shutdown threshold 155 165 ? c vin = 5v, ids = 2a v protect min. input voltage for over-temp function ? 3 ? v t iresp over current response time ? 4 ? s see figure 16 for definition t iblank over current blanking time ? 4 ? see figure 16 for definition i peak peak short circuit current ? 16 ? a see figure 16 for definition v reset protection reset voltage ? 1.3 ? v t reset protection reset time ? 8 ? s see figure 17 for definition t tresp over-temperature response time ? 12 ? see figure 18 for definition protection characteristics (t c = 25 c unless otherwise specified.) switching electricalcharacteristics (v cc = 14v, resistive load (r l ) = 5 w , t c = 25c.) please refer to figure 15 for switching time definitions. minimum typical maximum units test conditions t don turn-on delay time ? 160 250 v in = 5v ?90? v in = 10v t r rise time ? 650 1200 v in = 5v ? 250 ? ns v in = 10v t doff turn-off delay time ? 250 350 v in = 5v ? 300 ? v in = 10v t f fall time ? 180 350 v in = 5v ? 170 ? v in = 10v
IRSF3011 4 figure 3 on resistance vs. drain-to-source current figure 4 on resistance vs. temperature figure 5 over-current shutdown threshold vs. input voltage figure 6 over-current shutdown threshold vs. temperature i ds (a ) r ds(on) (mohm ) 100 125 150 175 200 225 250 12345678 vin = 4v vin = 5v vin = 8v vin = 10v t = 25c i nput voltage (volt s) s hut down current (a ) 6 6.5 7 7.5 8 45678910 t = 25c fig. 4 - on resistance vs. temperature t emperature (c ) r ds(on) (mohm ) 50 100 150 200 250 300 -50 -25 0 25 50 75 100 125 150 vin = 10v ids = 4a vin = 5v 0 t emperature (c ) s hut down current (a ) 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 150 vin = 5v
IRSF3011 5 figure 7 input current vs. input voltage figure 8 input current vs.temperature figure 9 turn-on characteristics vs. input voltage figure 10 turn-on characteristics vs. temperature i nput voltage (volt s) i nput current (ma ) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 01234567891011 iin,off t=25c iin,on t emperature (c ) i nput current (ma ) 0 0.1 0.2 0.3 0.4 0.5 0.6 -50-25 0 255075100125150 iin,on iin,off vin = 5v i nput voltage (volt s) r ise time, on delay (s ) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 34567891011 on dela y r ise tim e t = 25c t emperature (c ) r ise time, on delay (s ) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -50 -25 0 25 50 75 100 125 150 on dela y rise time v in = 5 v
IRSF3011 6 figure 11 turn-off characteristics vs. input voltage figure 12 turn-off characteristics vs. temperature figure 13 source-drain diode forward voltage figure 14 unclamped single pulse inductive energy to failure vs. starting junction temperature t emperature (c ) f all time, off delay (s ) 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 -50 -25 0 25 50 75 100 125 150 off dela y fall time vin = 5v i nput voltage (volt s) f all time, off delay (s ) 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 34567891011 off delay fall time t = 25c s ource to drain voltage (volt s) r everse drain current ( a) 1 10 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 t = 25c t = 150c s tarting junction temperature (c ) s ingle pulse energy to failure (m j) 0 250 500 750 1000 1250 1500 1750 2000 0 25 50 75 100 125 150 ids = 4a vdd=25v
IRSF3011 7 figure 15 definition of switching times figure 16 definition of i peak , t l blank , t l resp figure 17 definition of t reset figure 18 definition of t tresp i ds v in t t t t resp 5v vcc = 14v = 10 r l w + 5c t j = t jsd i ds v in t t i peak t i blank t i resp short applied before turn-on short applied after turn-on 5v vcc = 14v = 0 r l i ds v in t t 5v vcc = 14v = 1 mh r l i ds(sd) t < reset t t > reset t 50% 90% 10% v ds v in t t t don t r t doff t f
IRSF3011 8 case outline ? sot-223 (IRSF3011l) millimeters inches dim min max min max a 1.55 1.80 0.061 0.071 b 0.65 0.85 0.026 0.033 b1 2.95 3.15 0.116 0.124 c 0.25 0.35 0.010 0.014 d 6.30 6.70 0.248 0.264 e 3.30 3.70 0.130 0.146 e 2.30 bsc .0905 bsc e1 4.60 bsc 0.181 bsc h 6.71 7.29 0.287 0.264 l 0.91 0.036 l1 0.02 0.10 0.0006 0.004 q 10 max 10 max notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982 2. controlling dimension: inch 3. dimensions do not include lead flash 4. conforms to jedec outline to-261aa lead assignments 1. gate 2. drain 3. source 4. drain
IRSF3011 9 tape and reel ? sot-223 (IRSF3011l) notes: 1. controlling dimension: millimeter 2. conforms to outline eia-481 and eia-541 3. each ? 330.00 (13.00) reel contains 2,500 devices. notes: 1. controlling dimension: millimeter 2. conforms to outline eia-481-1 3. dimension measured at hub 4. includes flange distortion at outer edge
IRSF3011 10 case outline ? to-220ab (IRSF3011) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982 2. controlling dimension: inch 3. dimensions shown are in millimeters (inches) 4. conforms to jedec outline to-251aa 5. dimension does not include solder dip. solder dip max. +0.16 (.006) lead assignments 1. gate 2. drain 3. source 4. drain
IRSF3011 11 figure a1. block diagram figure a2. waveforms switching clamped induc- tive load using 5v input voltage application information introduction protected monolithic power mosfets offer simple, cost effective solutions in applications where extreme oper- ating conditions can occur. the margin between the operating conditions and the absolute maximum values can be narrowed, resulting in better utilization of the device and lower cost. esd protection also reduces the off-circuit failures during handling and assembly. general description the IRSF3011 is a fully protected monolithic n-channel logic level power mosfet with 200m w (max) on-re- sistance. the built-in protections include over-current, over-temperature, esd and over-voltage. the over-current and over-temperature protections make the IRSF3011 indestructible under any load conditions in switching or in linear applications. the built-in esd pro- tection minimizes the risk of esd damage when the device is off-circuit. the IRSF3011 is fully characterized for ava- lanche operation and can be used for fast de-energization of inductive loads. the to-220 packaged IRSF3011 offers an easy upgrade with direct pin-to-pin replacement from non-protected de- vices. block diagram as illustrated in figure a1, a zener diode between the input and the source provides the esd protection for the input and also limits the voltage applied to the input to 10v. the r-s flip-flop memorizes the occurrence of an error condition and controls the q2 and q3 switches. the flip- flop can be cleared by holding the input low for the specified minimum duration. comp1 and comp2 comparators are used to compare the over-current and over-temperature signals with the built-in reference. either comparator can reset the fault flip-flop and turn q1 off. during fault condition, q2 disconnects the gate of q1 from the input, and q3 shorts the gate and source of q1, resulting in rapid turn-off of q1. the zener diode between the gate and drain of q1 turns q1 on when the drain to source voltage exceeds 55v. switching characteristics in the IRSF3011, the control logic and the protection cir- cuits are powered from the input pin. when positive voltage appears at the input pin, the r-s flip-flop turns q2 on and connects the gate of the main device to the input. the turn-on speed is limited by the channel resistance of q2 and the gate charge requirements of q1. the typical switch- ing waveforms at 5v input voltage are shown in figure a2. using higher input voltage will improve the turn-on time but it will not affect the turn-off switching speed. the typical waveforms at 7v input voltage are shown in figure a3. in typical switching applications (below 60khz) the difference in switching losses between the IRSF3011 and the same size standard mosfet is negligible. over-current protection when the drain current exceeds the preset limit, the protec- tion circuit resets the internal flip-flop and turns q1 off. normal operation can be restored by holding the input volt- input voltage 5v/div. drain current: 1a/div. drain voltage 5v/div. time: 1 m sv/div.
IRSF3011 12 world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: 171 (k&h bldg.) 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 12/96 figure a4. waveforms at over-current shut-down figure a3. switching waveforms with 7v input voltage age below the specified threshold level (approx. 1.3v) for the specified minimum t reset time. the typical waveforms at over-current shut-down are shown in figure a4. after turn-on, the current in the in- ductor at the drain starts ramping up. at about 7a, the over-current protection shuts down the device. over-temperature protection figure a5 illustrates the operation of the over-temperature protection. the IRSF3011 switches a 2 w resistive load to a 10v power supply. when the thermal balance is estab- lished, the junction temperature is limited on a pulse-by-pulse basis. over-voltage protection when the drain-to-source voltage exceeds 55v, the zener diode between gate and drain turns the IRSF3011 on be- fore the breakdown voltage of the drain-source diode is reached. this greatly enhances the energy the device can safely withstand during inductive load turn-offs compared figure a5. over-temperature shut-down input voltage 10v/div. drain voltage 5v/div. drain current: 2a/div. time: 10 m sv/div. to avalanche breakdown. thus the device can be used for fast de-energization of inductive loads. the absorbed en- ergy is limited only by the maximum junction temperature. time: 10 m sv/div. drain current: 2a/div. input voltage 5v/div. drain voltage 5v/div. input voltage 5v/div. drain voltage 5v/div. drain current: 1a/div. time: 1 m sv/div.

▲Up To Search▲

Price & Availability of IRSF3011

	To Download IRSF3011 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .