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  rev. 1.2 september 2009 www.aosmd.com page 1 of 12 AOZ1325DI dual channel load switch with controlled slew rate general description the AOZ1325DI is a p-channel high-side load switch with slew rates of 1ms. the AOZ1325DI provide an output discharge circuit to quickly discharge the output when the switch is disabled. the p-channel mosfet has typical on resistance of 250m ? at 1.8v. the very low r ds(on) significantly reduces the power path dissipation. the input voltage range of AOZ1325DI is from 1.6v to 5.5v. the control input is compatible with both ttl and cmos logic. ultra low quiescent current makes this product suitable for any portable applications. the AOZ1325DI is available in 8-pin 3x3 dfn package and is rated over the -40c to +85c ambient temperature range. features 1.6v to 5.5v input voltage range low r ds(on) (250m ? typical at 1.8v) controlled turn-on slew rate: 1ms output discharge function low quiescent curren t (1.0a typical) low shutdown current (<1a) 4kv esd rating tiny 3x3mm dfn package applications cellular phones mp3 players personal media players notebook computers digital still cameras hot-swap applications typical applications circuit out1 v in v out in1 en1 gnd c3 0.1f c1 1f off on AOZ1325DI out2 v in v out in2 en2 c4 0.1f c2 1f off on
rev. 1.2 september 2009 www.aosmd.com page 2 of 12 AOZ1325DI ordering information aos green products use reduced levels of halogens, and are also rohs compliant. please visit www.aosmd.com/web/qualit y/rohs_compliant.jsp for additional information. pin configuration pin description part number slew rate output discharge package environmental AOZ1325DI 1ms yes 3x3 dfn-8 rohs compliant green product pin name pin number pin function v in 1 1 input. in is the drain of the p-channel mosfet. it is the supply input of the ic. en1 2 enable. the p-channel mosfet turns on when en is logic high. en2 3 enable. the p-channel mosfet turns on when en is logic high. v in 2 4 input. in is the drain of the p-channel mosfet. it is the supply input of the ic. v out 2 5 output. out is the source of the p-channel mosfet. gnd 6 ground. nc 7 no connect. v out 1 8 output. out is the source of the p-channel mosfet. 1 2 3 4 8 7 6 5 v in 1 en1 en2 v in 2 v out 1 nc gnd v out 2 3mm x 3mm dfn-8 top view
rev. 1.2 september 2009 www.aosmd.com page 3 of 12 AOZ1325DI absolute maximum ratings exceeding the absolute maximum ratings may damage the device. note: 1. devices are inherently esd s ensitive, handling precautions are required. human body model is a 100pf capacitor discharging through a 1.5k ? resistor. thermal ratings the device is not guaranteed to o perate beyond the thermal ratings. electrical characteristics t a = 25c, v in = v en = 5v, unless otherwise specified. parameter rating input voltage (v in )6v enable voltage (v en )v in + 0.3v continuous drain current (i d ) t a = 25c t a = 85c 1.0a 0.7a pulsed drain current (i dp )6a continuous diode current (i s )-50ma storage temperature (t s ) -55c to +150c esd rating (1) 4kv parameter rating input voltage (v in ) +1.6 to +5.5v junction temperature (t j ) -40c to +125c package thermal resistance, 3 x 3 dfn-8 ( ja )136c/w symbol parameter conditions min. typ. max units v en_th enable threshold voltage v in = 1.6v to 4.5v, i d = -250ua 0.3 1.2 v i in quiescent supply current (single channel) v in =v en = 5.5v 1.6 3 a i off off state leakage current (single channel) v in = +5.5v , v en = 0v 1 a r ds(on) switch on-resistance (single channel) v in = 3.3v, id = -100ma, v en = 1.5v v in = 1.8v, id = -100ma, v en = 1.5v 150 250 210 350 m ? m ? r shutdown turn-off resistance (single channel) v in = 3.6v, i test = 1ma, v en = 0v 162 220 ? delay time t d(on) output turn-on delay v in = 3.6v, id = -100ma, v en = 1.5v 320 700 s t r output rise-time v in = 3.6v, id = -100ma, v en = 1.5v 500 1000 1500 s t d(off) output turn-off delay v in = 3.6v, id = -100ma, v en = 1.5v without output cap 60 200 ns t f output fall-time v in = 3.6v, id = -100ma, v en = 1.5v without output cap 20 100 ns
rev. 1.2 september 2009 www.aosmd.com page 4 of 12 AOZ1325DI typical operating characteristic r ds(on) variance with temperature r ds(on) (m) temperature (c) on resistance vs. input voltage turn-on delay vs. input voltage r ds(on) (m) turn-on (s) input voltage (v) on resistance vs. input voltage v drop) (mv) load current (a) en threshold votlage (v) input voltage (v) en threshold voltage vs. input voltage vds = 3.6v, id = 0.1a 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 220 200 180 160 140 120 100 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 -40 -20 0 20 40 60 80 100 120 140 160 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 rise time vs. input voltage rise time (s) 100 150 200 250 300 350 400 0 100 200 300 400 500 600 700 800 350 300 250 200 150 100 50 0 0 200 400 600 800 1000 1200 input voltage (v) 1.5 2 2.5 3 3.5 4 4.5 5 input voltage (v) 1.5 2 2.5 3 3.5 4 4.5 5 0 0.2 0.4 0.6 0.8 1.0 1.2 vin=1.8v vin=2.5v vin=4.5v il = 1.2a il = 0.9a il = 0.1a vih, id = -250a vil, id = -250a
rev. 1.2 september 2009 www.aosmd.com page 5 of 12 AOZ1325DI typical operating characteristic (continued) turn-off delay vs. input voltage turn-off (ns) fall time vs. input voltage fall time (ns) input voltage (v) 1.5 2 2.5 3 3.5 4 4.5 5 input voltage (v) 1.5 2 2.5 3 3.5 4 4.5 5 0 20 40 60 80 100 120 140 160 180 0 5 10 15 20 25 30 35 40 45
rev. 1.2 september 2009 www.aosmd.com page 6 of 12 AOZ1325DI functional characteristics turn-on/turn-off timing time: 4s/div enable 2v/div v out 2v/div i out 100ma/div turn-off timing time: 40s/div enable 2v/div v out 2v/div i out 100ma/div turn-on/turn-off timing time: 10s/div enable 2v/div v out 2v/div i out 100ma/div turn-off timing time: 400s/div enable 2v/div v out 2v/div i out 100ma/div
rev. 1.2 september 2009 www.aosmd.com page 7 of 12 AOZ1325DI timing diagram figure 1. AOZ1325DI timing diagram functional block diagram figure 2. functional block diagram (single channel) 10% 90% 90% vil vih en t d(on) t r out t d(off) in out en gnd gate driver & slew rate control AOZ1325DI 160
rev. 1.2 september 2009 www.aosmd.com page 8 of 12 AOZ1325DI detailed description internal discharge resistor the AOZ1325DI has an internal 160 ? resistor to discharge any remaining voltage from the system to the ground that is store in a capacitive load. this provides a safe shutdown of the system to prevent any damages to the devices. this function is controlled from the enable pin. slew rate control the AOZ1325DI is a family of p-channel high-side load switches with controlled slew rate. the device is enabled when the en pin is high. once enabled, the gate driver and slew-rate control circui try immediately raises the source-to-gate voltage of the p-channel mosfet to its threshold level, and then gradually turns on the mosfet by linearly increases the source-to-gate voltage. this slow turn-on action effectiv ely limits the input inrush current and provides a nice ramp for the output voltage. after the mosfet is fully enhanced, the AOZ1325DI quickly increases the source-to-gate voltage to the full input voltage to minimize on resistance and reduce power dissipation. AOZ1325DI has a slew rate of 1ms. this option significantly reduces the inrush current when the mosfet turns on, allowing the use of very small input capacitor. the AOZ1325DI also include an internal output discharge circuit t hat quickly discharges the output to ground when the device is disabled. on/off control the AOZ1325DI is enabled when the en pin is asserted high. the device is disabled when the en pin is asserted low. the en input is comp atible with both ttl and cmos logic.
rev. 1.2 september 2009 www.aosmd.com page 9 of 12 preliminary information AOZ1325DI applications information input capacitor selection use a 1f or larger capacitor for input bypassing. place the capacitor close to the in pins of AOZ1325DI. output capacitor selection use a 0.1f or larger capac itor between out and gnd. the capacitance does not affect the turn-on slew rate. however, a larger capacito r makes the initial turn-on transient smoother. thermal considerations to ensure proper operation, the maximum junction temperature (t j(max) ) of the AOZ1325DI should not exceed 125c. several factors attribute to the junction temperature rise: load current, mosfet on resistance (r ds (on) ), junction-to-ambient thermal resistance ( ja ), and ambient temperature (t a ). use the following equation to determine the maximum continuous load current i load(max) : where; r ds(on) is the maximum value of th e mosfet on resistance at 25c. please note the maximum load current should not exceed the absolute maximum current rating of the switch. for example, when v in = 1.8v, the maximum continuous load current at room temperature is: since the calculated current is greater than the absolute maximum current rating, the maximum load current at v in = 1.8v and room temperature is 1a. exceeding the maximum continuous load current may cause damage to the device. power-up sequence en pin must be powered up after v in pin, in order to avoid latch-up, or mis-operation of switch. we do not assume any liability or resp onsibility for any loss or damage arising from misuse or inappropriate use of the product. layout guidelines good pcb is important fo r improving the thermal performance of AOZ1325DI. pl ace the input and output bypass capacitors close to the in and out pins. the input and output pcb traces should be as wide as possible for the given pcb space. use a ground plane to enhance the power dissipat ion capability of the device. i load max () t jmax () t a ? ja r ds on () ---------------------------------------- = i load max () 125 c25 c ? 136 cr ds on () ---------------------------------------------- - 1.4a ==
rev. 1.2 september 2009 www.aosmd.com page 10 of 12 AOZ1325DI package dimensions, dfn 3 x 3 top view bottom view side view recommended land pattern notes: 1. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 6 mils each. 2. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. symbols a a1 b c d e e1 e l l1 1 dimensions in millimeters min. 0.70 0.00 0.24 0.08 0.20 0.05 0 nom. 0.80 0.30 0.15 2.90 bsc 2.80 bsc 2.30 sc 0.65 bsc 0.38 10 max. 0.90 0.05 0.35 0.25 0.45 12 symbols a a1 b c d e e1 e l l1 1 dimensions in inches min. 0.028 0.000 0.009 0.003 0.008 0.002 0 nom. 0.031 0.012 0.006 0.114 bsc 0.110 bsc 0.091 sc 0.026 bsc 0.015 10 max. 0.035 0.002 0.014 0.010 0.018 12 b d e1 e e a c a1 1 l 0.10mm m 0.58 0.40 0.65 3.00 unit: mm l1
rev. 1.2 september 2009 www.aosmd.com page 11 of 12 AOZ1325DI tape and reel dimensions, dfn 3 x 3 package a0 b0 k0 e e1 e2 d0 d1 p0 p1 p2 t 3.40 0.10 0.10 3.35 0.10 1.10 1.50 1.00 8.00 0.10 1.75 0.05 3.50 0.10 4.00 0.10 4.00 0.05 2.00 0.20 0.23 unit: mm tape leader/trailer and orientation +0.30/-0.10 trailer tape 300mm min. components tape orientation in pocket leader tape 500mm min. k0 b0 p0 a0 p1 p2 d0 d1 e1 e2 e t feeding direction +0.25/-0.00 +0.10/-0.00 reel tape size 8mm reel size ?180 m ?180.00 0.50 n 60.0 0.50 w1 r m s k h n unit: mm w1 8.4 +1.5/-0 h 13.0 0.20 s 1.5 min. k 13.5 min. r 3.0 0.50 dfn 3x3 ep
rev. 1.2 september 2009 www.aosmd.com page 12 of 12 AOZ1325DI package marking dfn 3 x 3 $1 $2 $3 $4 $t $o $a $w $l $t pin 1 dot as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. this datasheet contains preliminary data; supplementary data may be published at a later date. alpha & omega semiconductor reserves the right to make changes at any time without notice. life support policy alpha & omega semiconductor products ar e not authorized for use as critical components in life support devices or systems.


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