? semiconductor components industries, llc, 2011 october, 2011 ? rev. 10 1 publication order number: mmbt2222lt1/d mmbt2222l, mmbt2222al, smmbt2222al general purpose transistors npn silicon features ? these devices are pb ? free, halogen free/bfr free and are rohs compliant ? aec ? q101 qualified and ppap capable ? s prefix for automotive and other applications requiring unique site and control change requirements maximum ratings rating symbol value unit collector ? emitter voltage mmbt2222l mmbt2222al, smmbt2222al v ceo 30 40 vdc collector ? base voltage mmbt2222l mmbt2222al, smmbt2222al v cbo 60 75 vdc emitter ? base voltage mmbt2222l mmbt2222al, smmbt2222al v ebo 5.0 6.0 vdc collector current ? continuous i c 600 madc collector current ? peak (note 3) i cm 1100 madc thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction ? to ? ambient r ja 556 c/w total device dissipation alumina substrate (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction ? to ? ambient r ja 417 c/w junction and storage temperature range t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. reference soa curve. sot ? 23 case 318 style 6 marking diagram xxx = 1p or m1b m = date code* = pb ? free package collector 3 1 base 2 emitter http://onsemi.com (note: microdot may be in either location) *date code orientation and/or overbar may vary depending upon manufacturing location. see detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ordering information 1 2 1 3 xxx m
mmbt2222l, mmbt2222al, smmbt2222al http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (i c = 10 madc, i b = 0) mmbt2222 mmbt2222a v (br)ceo 30 40 ? ? vdc collector ? base breakdown voltage (i c = 10 adc, i e = 0) mmbt2222 mmbt2222a v (br)cbo 60 75 ? ? vdc emitter ? base breakdown voltage (i e = 10 adc, i c = 0) mmbt2222 mmbt2222a v (br)ebo 5.0 6.0 ? ? vdc collector cutoff current (v ce = 60 vdc, v eb(off) = 3.0 vdc) mmbt2222a, smmbt2222a i cex ? 10 nadc collector cutoff current (v cb = 50 vdc, i e = 0) mmbt2222 (v cb = 60 vdc, i e = 0) mmbt2222a, smmbt2222a (v cb = 50 vdc, i e = 0, t a = 125 c) mmbt2222 (v cb = 60 vdc, i e = 0, t a = 125 c) mmbt2222a, smmbt2222a i cbo ? ? ? ? 0.01 0.01 10 10 adc emitter cutoff current (v eb = 3.0 vdc, i c = 0) mmbt2222a, smmbt2222a i ebo ? 100 nadc base cutoff current (v ce = 60 vdc, v eb(off) = 3.0 vdc) mmbt2222a, smmbt2222a i bl ? 20 nadc on characteristics dc current gain (i c = 0.1 madc, v ce = 10 vdc) (i c = 1.0 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc, t a = ? 55 c) mmbt2222a only (i c = 150 madc, v ce = 10 vdc) (note 4) (i c = 150 madc, v ce = 1.0 vdc) (note 4) (i c = 500 madc, v ce = 10 vdc) (note 4) mmbt2222 mmbt2222a, smmbt2222a h fe 35 50 75 35 100 50 30 40 ? ? ? ? 300 ? ? ? ? collector ? emitter saturation voltage (note 4) (i c = 150 madc, i b = 15 madc) mmbt2222 mmbt2222a, smmbt2222a (i c = 500 madc, i b = 50 madc) mmbt2222 mmbt2222a, smmbt2222a v ce(sat) ? ? ? ? 0.4 0.3 1.6 1.0 vdc base ? emitter saturation voltage (note 4) (i c = 150 madc, i b = 15 madc) mmbt2222 mmbt2222a, smmbt2222a (i c = 500 madc, i b = 50 madc) mmbt2222 mmbt2222a, smmbt2222a v be(sat) ? 0.6 ? ? 1.3 1.2 2.6 2.0 vdc small ? signal characteristics current ? gain ? bandwidth product (note 5) (i c = 20 madc, v ce = 20 vdc, f = 100 mhz) mmbt2222 mmbt2222a, smmbt2222a f t 250 300 ? ? mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c obo ? 8.0 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) mmbt2222 mmbt2222a, smmbt2222a c ibo ? ? 30 25 pf input impedance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) mmbt2222a, smmbt2222a (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) mmbt2222a, smmbt2222a h ie 2.0 0.25 8.0 1.25 k voltage feedback ratio (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) mmbt2222a, smmbt2222a (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) mmbt2222a, smmbt2222a h re ? ? 8.0 4.0 x 10 ? 4 small ? signal current gain (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) mmbt2222a, smmbt2222a (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) mmbt2222a, smmbt2222a h fe 50 75 300 375 ?
mmbt2222l, mmbt2222al, smmbt2222al http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) characteristic unit max min symbol small ? signal characteristics output admittance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) mmbt2222a, smmbt2222a (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) mmbt2222a, smmbt2222a h oe 5.0 25 35 200 mhos collector base time constant (i e = 20 madc, v cb = 20 vdc, f = 31.8 mhz) mmbt2222a, smmbt2222a rb, c c ? 150 ps noise figure (i c = 100 adc, v ce = 10 vdc, r s = 1.0 k , f = 1.0 khz) mmbt2222a, smmbt2222a nf ? 4.0 db switching characteristics (mmbt2222a only) delay time (v cc = 30 vdc, v be(off) = ? 0.5 vdc, i c = 150 madc, i b1 = 15 madc) t d ? 10 ns rise time t r ? 25 storage time (v cc = 30 vdc, i c = 150 madc, i b1 = i b2 = 15 madc) t s ? 225 ns fall time t f ? 60 4. pulse test: pulse width 300 s, duty cycle 2.0%. 5. f t is defined as the frequency at which |h fe | extrapolates to unity. figure 1. turn ? on time figure 2. turn ? off time switching time equivalent test circuits scope rise time < 4 ns *total shun t capacitance of test jig, connectors, and oscilloscope. +16 v -2 v < 2 ns 0 1.0 to 100 s, duty cycle 2.0% 1 k +30 v 200 c s * < 10 pf +16 v -14 v 0 < 20 ns 1.0 to 100 s, duty cycle 2.0% 1 k +30 v 200 c s * < 10 pf -4 v 1n914 1000 10 20 30 50 70 100 200 300 500 700 1.0 k 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 i c , collector current (ma) figure 3. dc current gain h fe , dc current gain t j = 125 c 25 c -55 c v ce = 1.0 v v ce = 10 v
mmbt2222l, mmbt2222al, smmbt2222al http://onsemi.com 4 v ce , collector-emitter voltage (volts) 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 i b , base current (ma) figure 4. collector saturation region t j = 25 c i c = 1.0 ma 10 ma 150 ma 500 ma figure 5. turn ? on time i c , collector current (ma) 70 100 200 50 t, time (ns) 10 20 70 5.0 100 5.0 7.0 30 50 200 10 30 7.0 20 i c /i b = 10 t j = 25 c t r @ v cc = 30 v t d @ v eb(off) = 2.0 v t d @ v eb(off) = 0 3.0 2.0 300 500 500 t, time (ns) 5.0 7.0 10 20 30 50 70 100 200 300 figure 6. turn ? off time i c , collector current (ma) 10 20 70 100 5.0 7.0 30 50 200 300 500 v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c t s = t s - 1/8 t f t f figure 7. frequency effects f, frequency (khz) 4.0 6.0 8.0 10 2.0 0.1 figure 8. source resistance effects r s , source resistance (ohms) nf, noise figure (db) 1.0 2.0 5.0 10 20 50 0.2 0.5 0 100 nf, noise figure (db) 0.01 0.02 0.05 r s = optimum r s = source r s = resistance i c = 1.0 ma, r s = 150 500 a, r s = 200 100 a, r s = 2.0 k 50 a, r s = 4.0 k f = 1.0 khz i c = 50 a 100 a 500 a 1.0 ma 4.0 6.0 8.0 10 2.0 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
mmbt2222l, mmbt2222al, smmbt2222al http://onsemi.com 5 figure 9. capacitances reverse voltage (volts) 3.0 5.0 7.0 10 2.0 0.1 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.2 0.3 0.5 0.7 c cb 20 30 c eb figure 10. current ? gain bandwidth product i c , collector current (ma) 70 100 200 300 50 500 f t , current-gain bandwidth product (mhz) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 v ce = 20 v t j = 25 c figure 11. collector emitter saturation voltage vs. collector current figure 12. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0.01 0.1 1 1 0.1 0.01 0.001 0.2 0.3 0.5 0.7 0.8 1.0 1.1 1.3 figure 13. base emitter voltage vs. collector current i c , collector current (a) 1 0.1 0.01 0.001 0.2 0.3 0.5 0.6 0.7 0.9 1.1 1.2 v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) i c /i b = 10 150 c ? 55 c 25 c 0.4 0.6 0.9 1.2 i c /i b = 10 150 c ? 55 c 25 c 0.4 0.8 1.0 v ce = 1 v 150 c ? 55 c 25 c figure 14. temperature coefficients i c , collector current (ma) -0.5 0 +0.5 coefficient (mv/ c) -1.0 -1.5 -2.5 r vc for v ce(sat) r vb for v be -2.0 0.1 1.0 2.0 5.0 10 20 50 0.2 0.5 100 200 50 0
mmbt2222l, mmbt2222al, smmbt2222al http://onsemi.com 6 figure 15. safe operating area v ce (vdc) 100 10 1 0.1 0.01 0.001 0.01 0.1 1 10 ic (a) single pulse test @ t a = 25 c thermal limit 100 ms 1 s 10 ms 1 ms ordering information device specific marking code package shipping ? mmbt2222lt1g m1b sot ? 23 (pb ? free) 3000 / tape & reel mmbt2222alt1g, SMMBT2222ALT1G 1p sot ? 23 (pb ? free) 3000 / tape & reel mmbt2222lt3g m1b sot ? 23 (pb ? free) 10,000 / tape & reel mmbt2222alt3g, smmbt2222alt3g 1p sot ? 23 (pb ? free) 10,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
mmbt2222l, mmbt2222al, smmbt2222al http://onsemi.com 7 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 soldering footprint* *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. style 6: pin 1. base 2. emitter 3. collector d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. mmbt2222lt1/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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