absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 75* i d @ v gs = 12v, t c = 100c continuous drain current 69 i dm pulsed drain current 300 p d @ t c = 25c max. power dissipation 300 w linear derating factor 2.4 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 363 mj i ar avalanche current 75 a e ar repetitive avalanche energy 30 mj dv/dt peak diode recovery dv/dt a 6.0 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 3.3 (typical) g pre-irradiation international rectifiers r5 tm technology provides high performance power mosfets for space appli- cations. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paral- leling and temperature stability of electrical param- eters. o c a radiation hardened irhna57160 power mosfet surface mount (smd-2) 3/2/00 www.irf.com 1 100v, n-channel * current is limited by internal wire diameter ? technology smd-2 product summary part number radiation level r ds(on) i d irhna57160 100k rads (si) 0.012 w 75*a irhna53160 300k rads (si) 0.012 w 75*a irhna54160 600k rads (si) 0.012 w 75*a IRHNA58160 1000k rads (si) 0.013 w 75*a features: n single event effect (see) hardened n ultra low r ds(on) n low total gate charge n proton tolerant n simple drive requirements n ease of paralleling n hermetically sealed n surface mount n ceramic package n light weight for footnotes refer to the last page r r 5 pd - 91860e
irhna57160 pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 100 v v gs = 0v, i d = 1.0ma d bv dss / d t j temperature coefficient of breakdown 0.115 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.013 v gs = 12v, i d = 75a resistance 0.012 w v gs = 12v, i d = 69a v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 42 s ( )v ds > 15v, i ds = 69a ? i dss zero gate voltage drain current 10 v ds = 80v ,v gs =0v 25 v ds = 80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 160 v gs =12v, i d = 75a q gs gate-to-source charge 55 nc v ds = 50v q gd gate-to-drain (miller) charge 65 t d (on) turn-on delay time 35 v dd = 50v, i d = 75a, t r rise time 125 r g = 2.35 w t d (off) turn-off delay time 75 t f fall time 50 l s + l d total inductance 4.0 c iss input capacitance 6440 v gs = 0v, v ds = 25v c oss output capacitance 1660 pf f = 1.0mhz c rss reverse transfer capacitance 60 na w ? nh ns m a thermal resistance parameter min typ max units test conditions r thjc junction-to-case 0.42 r thj-pcb junction-to-pc board 1.6 soldered to a 2 square copper-clad board c/w measured from the center of drain pad to center of source pad note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) 75* i sm pulse source current (body diode) 300 v sd diode forward voltage 1.2 v t j = 25c, i s = 75a, v gs = 0v ? t rr reverse recovery time 300 ns t j = 25c, i f = 35a, di/dt 3 100a/ m s q rr reverse recovery charge 2.2 m cv dd 25v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a * current is limited by internal wire diameter
www.irf.com 3 irhna57160 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter up to 600k rads(si) 1 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 100 100 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage ? 2.0 4.0 1.5 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = 20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 10 10 a v ds =80v, v gs =0v r ds(on) static drain-to-source ? 0.013 0.014 w v gs = 12v, i d =45a on-state resistance (to-3) r ds(on) static drain-to-source ? 0.012 0.013 w v gs = 12v, i d =45a on-state resistance (smd-2) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part numbers irhna57160, irhna53160 and irhna54160 2. part number IRHNA58160 fig a. single event effect, safe operating area v sd diode forward voltage ? 1.2 1.2 v v gs = 0v, i s = 45a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. single event effect safe operating area ion let energy range v ds (v) mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v br 36.7 309 39.5 100 100 100 100 100 i 59.8 341 32.5 100 100 100 35 25 au 82.3 350 28.4 100 100 80 25 0 20 40 60 80 100 120 -20 -15 -10 -5 0 vds vgs br i au
irhna57160 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 25v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 10 100 1000 5.0 6.0 7.0 8.0 9.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 75a
www.irf.com 5 irhna57160 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 2000 4000 6000 8000 10000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c rss c oss c iss 0 40 80 120 160 200 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 75a v = 20v ds v = 50v ds v = 80v ds 0.1 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j pre-irradiation 1 10 100 1000 v ds, drain-to-source voltage (v) 1 10 100 1000 i d , drain current (a) 10us 100us 1ms 10ms tc = 25c tj = 150c single pulse operation in this area limited by r ds ( on )
irhna57160 pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 12v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0 20 40 60 80 100 120 140 t , case temperature ( c) i , drain current (a) c d limited by package 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
www.irf.com 7 irhna57160 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 12v 25 50 75 100 125 150 0 150 300 450 600 750 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 34a 47a 75a . pre-irradiation
irhna57160 pre-irradiation 8 www.irf.com ? pulse width 300 m s; duty cycle 2% ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. 80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l= 0.13 mh peak i l = 75a, v gs = 12v a i sd 75a, di/dt 340a/ m s, v dd 100v, t j 150c footnotes: case outline and dimensions smd-2 pad assignments ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir european regional center: 439/445 godstone rd, whyteleafe, surrey cr3 obl, uk tel: ++ 44 (0)20 8645 8000 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 (0) 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 011 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171 tel: 81 (0)3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 (0)838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673 tel: 886-(0)2 2377 9936 data and specifications subject to change without notice. 3/00
|
