SIGC16T120CL edited by infineon technologies ai ps dd hv3, l 7131 - p , edition 2 , 03.09.2003 igbt chip in npt - technology this chip is used for: chip only features: 1200v npt technology 180m chip short circuit prove positive temperature coefficient easy paralleling applications: drives g c e chip type v ce i cn die si ze package ordering code sigc16t120 cl 1200v 8a 4.04 x 4 mm 2 sawn on foil q67041 - a4703 - a003 mechanical parameter: raster size 4.04 x 4 area total / active 16.16 / 10.4 emitter pad size 1.88 x 2.18 gate pad size 0.71x 1.08 mm 2 thickness 180 m wafer size 150 mm flat position 0 deg max.possible chips per wafer 898 pcs passivation frontside photoimide emitter metalization 3200 nm al si 1% collector metalization 1400 nm ni ag ? system suitable for epoxy and soft solde r die bonding die bond electrically conductive glue or solder wire bond al, 500m reject ink dot size ? 0.65mm ; max 1.2mm recommended storage environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23c
SIGC16T120CL edited by infineon technologies ai ps dd hv3, l 7131 - p , edition 2 , 03.09.2003 ma ximum ratings : parameter symbol value unit collector - emitter voltage , t j =25 c v ce 1200 v dc collector current, limited by t jmax i c 1 ) a pulsed collector current, t p limited by t jmax i cpuls 24 a gate emitter voltage v ge 20 v o perating junction and storage temperature t j , t stg - 55 ... +150 c 1 ) depending on thermal properties of assembly static characteristics (tested on chip), t j =25 c, unless otherwise specified: value parameter symbol conditions min. typ. max. unit collector - emitter breakdown voltage v (br)ces v ge =0v , i c =500a 1200 collector - emitter saturation voltage v ce(sat) v ge =15v, i c =8a 1.8 2.2 2.6 gate - emitter threshold voltage v ge(th) i c =350a , v ge =v ce 4.5 5.5 6.5 v zero gate volt age collector current i ces v ce =1200v , v ge =0v 1.1 a gate - emitter leakage current i ges v ce =0v , v ge =2 0v 120 na dynamic characteristics (tested at component): value parameter symbol conditions min. typ. max. unit input capacitance c iss - 556 - output capacitance c oss - - - reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz - 38 - pf switching characteristics (tested at component) , inductive load: value parameter symbol conditions 1) min. typ. max. unit turn - on delay time t d(on) - 45 - rise time t r - 40 - turn - off delay time t d(off) - 285 - fall time t f t j =125 c v cc =600v, i c =10 a v ge = 15v, r g =82 w - 60 - ns 1) values also influenced by parasitic l - and c - in measurement and package.
SIGC16T120CL edited by infineon technologies ai ps dd hv3, l 7131 - p , edition 2 , 03.09.2003 chip drawing:
SIGC16T120CL edited by infineon technologies ai ps dd hv3, l 7131 - p , edition 2 , 03.09.2003 further e lectrical characteristics: this chip data sheet refers to the device data sheet description: aql 0,65 for visual inspection according to failure catalog electrostatic discharge sensitive device according to mil - std 883 test - normen villach/prffeld published by infineon technologies ag , bereich kommunikation st. - martin - strasse 53, d - 81541 mnchen ? infineon technologies ag 2002 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stat ed herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives world - wide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies com ponents may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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