1 of 10 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . ordering information rf in vreg vc2 rf out vcc vc1 pdetect nc 1 2 8 7 5 6 4 3 bias circuit input match interstage match power detector 2fo filter RF5222 3.0v to 4.2v, 2.4ghz to 2.5ghz linear power amplifier the RF5222 is a linear, medium-power, high-efficiency, two-stage ampli- fier ic designed specifically for ba ttery-powered wlan applications such as pc cards, mini pci, and compact flash applications. the device is man- ufactured on an advanced ingap gallium arsenide heterojunction bipolar transistor (hbt) process, and has been designed for use as the final rf amplifier in 2.5ghz ofdm and other spread-spectrum transmitters. the device is provided in a 2.2mmx2.2mm, 8-pin, qfn with a backside ground. the RF5222 is designed to main tain linearity over a wide range of supply voltage and power output. the RF5222 also has built-in power detector and incorporates the input and interstage matching components internally which reduces the component count used externally and makes it easier to incorporate on any design. features ? single power supply 3.0v to 4.2v ? 26db minimum gain, input matched to 50 ? ? 2.4ghz to 2.5ghz frequency range ? 11g p out =+17dbm@3% typ evm, 125ma applications ? ieee802.11b/g/n wlan applications ? 2.5ghz ism band applica- tions ? commercial an d consumer systems ? portable battery-powered equipment ? spread-spectrum and mmds systems RF5222 3.0v to 4.2v, 2.4ghz to 2.5ghz linear power amplifier RF5222pck-410 fully assembled evaluati on board tuned for 2.4 to 2.5 ghz and 5 piece loose samples ds100621 ? rohs compliant & pb-free product package style: qfn, 8-pin, 2.2mmx2.2mmx0.45mm
2 of 10 RF5222 ds100621 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . absolute maximum ratings parameter rating unit supply voltage -0.5 to +4.2 v dc power control voltage (v reg ) -0.5 to +3.2 v dc supply current 240 ma input rf power +10 dbm operating ambient temperature -30 to +85 c storage temperature -40 to +150 c moisture sensitivity jedec level 2 esd human body model (hbm) 500 v machince model (mm) 125 v parameter specification unit condition min. typ. max. ieee802.11g temperature=+25c, v cc =3.3v, v reg =3.1v pulsed at 1% to 100% duty cycle, frequency=2450mhz, circuit per evaluation board schematic, unless otherwise specified frequency 2.4 2.5 ghz ieee802.11g ieee802.11n output power 17 dbm at max data rate, ofdm modulation rms, mean, v cc =3.3v modified output match evm* 3.0 4.0 % rms, mean gain 26 31 db at +17dbm rf p out and 54mbps gain variance over temperature 1.5 db -30c to +85c, 2.4ghz to 2.5ghz power detector p out =8dbm 0.36 v p out =17dbm 0.9 v power supply 3.0 3.3 4.2 v dc v reg input voltage 3.0 3.1 3.2 v dc operating output vswr 10:1 the pa is stable, no spurs above -43dbm input return loss -15 -10 db turn-on time** 0.5 1.8 ? s output stable to within 90% of final gain second harmonic -43 dbm fundamenta l frequency is between 2.4ghz and 2.5ghz; rfp out =+17dbm current consumption quiescent current 85 ma data rate @< 3.5% evm rms, mean operating current 125 ma p out =+17dbm, v cc =3.3v, diff. output match required i reg current 3.5 6 ma v cc =+3.3v dc shutdown current 8 10 ? a notes: *the evm specification is obtained with a signal generator that has an evm floor of less than 0.7%. **the pa must operate with gated bias voltage input at 1% to 99% duty cycles without any evm or other parameter degradation. caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the device under absolute maximum rating condi- tions is not implied. rohs status based on eudirective2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro device s, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.
3 of 10 RF5222 ds100621 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . package drawing pin function description 1rf in rf input. input is matched to 50 ? and dc block is provided internally. 2vreg bias current control voltage for the first and second amplifier stage. 3 pdetect or nc power detector which provides an output voltage proportional to the rf output power level. may need external decoupling capacitor for p detect load sensitivity. may need external circuitry to bring output voltage to desired level. may be left unconnected if function is not desired. 4nc this pin may be left unconnected or may be connected to ground. 5rf out rf output. a dc blocking capacitor may be needed as this pin of the pa is a dc short to ground. 6vc2 voltage supply for second stage amplifier. external low frequency bypass capacitors should be connected if no other low frequency decoupling is employed. 7vc1 voltage supply for the first amplifier stage. external low frequency bypass capacitors should be connected if no other low frequency decoupling is employed. 8vcc supply voltage for the bias reference and control circuit. may be connected with v c1 and v c2 (with a single sup- ply voltage). the 56pf bypass capacitor should be placed as close as possible to the ic for the best perfor- mance. pkg base gnd the center metal base of the qfn package provides dc and rf ground as well as heat sink for the amplifier. 0.05 0.00 0.152 ref 0.50 0.40 -c- seating plane index area -b- -a- 2.20 2.20 2 plcs 0.10 c 2 plcs 0.10 c 0.10 max c ab 0.10 m 0.31 0.21 0.65 0.28 0.18 1.20 1.00 typ dimensions in mm. shaded lead is pin 1.
4 of 10 RF5222 ds100621 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . pin out rf in vreg nc pdetect vc2 rf out vcc vc1 1 2 8 7 5 6 4 3
5 of 10 RF5222 ds100621 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . theory of operation and application information the RF5222 is a two-stage power amplifier (pa) with a minimum gain of 26db in the 2.4ghz to 2.5ghz ism band. the RF5222 has integrated input and interstage matching components thus al lowing minimal bill of materal (bom) parts count in end appli- cations. the RF5222 is designed primarily for ieee802.11b/g/n wlan applications where the available suppl y voltage and current are limited. this amplifier will operate to (and below) the lowest expected voltage made available by a typical pcmcia slot in a laptop pc, and will maintain required linearity at decreased supply voltages. the device is provided in a 2.2mmx2.2mmx0.45mm, 8-pin, qfn with backside ground. the RF5222 requires only a single positive supply of 3.3v nomina l to operate to full specifications. power control is provided through one bias voltage pin (v reg ). the input dc blocking cap is provided intern ally and the evaluation board circuit (available from rfmd, inc. (rfmd)) is optimized for 3.3v dc applications. for best performance, it is important to duplicate (as closely as possible) the layout of the evaluation board. the RF5222 has primarily been characterized with a voltage on v reg of 3.1v dc . if you prefer to use a bias voltage that is significantly different than 3.1v dc , or a different frequency than the recommended fre- quency range, contact rfmd sales or application engineering for additional data and guidance. there is no required matching on the RF5222 input or inters tage circuits. only the RF5222 output stage requires matching allowing the RF5222 to be implemented in a pplications requiring the fewest end prod uct bill of materials (bom) parts count and lowest bom cost. in most cases, the capacitor used as pa rt of the RF5222 output matching circuit is also employed to accomplish dc-blocking. the RF5222pcba eval uation board (available from rf micro devices, inc. (rfmd)) is optimized for 3.3v dc supply input. for best results, the pa circuit layout from the evaluation boar d should be copied as closely as possible, particularly the gro und layout and ground vias. other configurations may also work, but the design process is much easier and quicker if the layout is copied from the RF5222 evaluation board. gerber files of rf md pcba designs can be provided on request. the RF5222 is a very easy part to implement, but care in circuit layout and component selection is always advisable when designing circuits to operate at 2.5ghz. the RF5222 evaluation board layout and sche matic are available using 0201 (us) size components which will help shrink the overall size of the total area of the pa and components of the intended design. please contact rfmd sales or application engineering for additional data and guidance.
6 of 10 RF5222 ds100621 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . application schematic 1 ? f 4.7 nh 0.1 ? f 56 pf vreg vcc 1.8 pf 4.7 nh 330 pf pdetect 1 2 8 7 5 6 4 3 bias circuit input match interstage match power detector 50 ? ? strip 10 pf rf out rf in 35 mils 2fo filter
7 of 10 RF5222 ds100621 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . evaluation board layout board size 1.2? x 1.2? board thickness 0.032?, board material fr-4
8 of 10 RF5222 ds100621 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . acp versus p out -70.0 -65.0 -60.0 -55.0 -50.0 -45.0 -40.0 -35.0 -30.0 -25.0 -20.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 output power (dbm) acp (dbm) acp1 2400mhz acp1 2450mhz acp1 2500mhz 2400mhz acp2 2450mhz acp2 2500mhz acp2 evm versus p out 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0.0 5.0 10.0 15.0 20.0 output power (dbm) evm (%) 2400mhz 2450mhz 2500mhz operating current versus p out 0.0 20.0 40.0 60.0 80.0 100.0 120.0 140.0 160.0 0.0 5.0 10.0 15.0 20.0 output power (dbm) i cc (ma) 2400mhz 2450mhz 2500mhz p detect versus p out 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.0 5.0 10.0 15.0 20.0 output power (dbm) p detect (v) 2400mhz 2450mhz 2500mhz
9 of 10 RF5222 ds100621 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com .
10 of 10 RF5222 ds100621 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com .
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