the information in this document is subject to change without notice. ? 1993
description the L2SC4226QT1 is a low supply voltage transistor designed for vhf, u hf low noise amplifier. it is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. features ? low noise nf = 1.2 db typ. @ f = 1 ghz, v ce = 3 v, i c = 7 ma ? high gain |s 21e | 2 = 9.0 db typ. @ f = 1 ghz, v ce = 3 v, i c = 7 ma ? small mini mold package eiaj: sc-70 L2SC4226QT1 2 1 3 sc-70/sot-323 leshan radio company, ltd. L2SC4226QT1-1/5
L2SC4226QT1 absolute maximum ratings (t a = 25 c) collector to base voltagev cbo 20v collector to emitter voltage v ceo 12 v emitter to base voltage v ebo 3v collector current i c 100 ma total power dissipation p t 150 mw junction temperature t j 150 c storage temperature t stg e65 to +150 c electrical characteristics (t a = 25 ?c) characteristic symbol min. typ. max. unit test condition collector cutoff current i cbo 1.0 m av cb = 10 v, i e = 0 emitter cutoff current i ebo 1.0 m av eb = 1 v, i c = 0 dc current gain h fe 125 250v ce = 3 v, i c = 7 ma* 1 gain bandwidth product f t 3.0 4.5 ghz v ce = 3 v, i c = 7 ma feed back capacitance c re 0.7 1.5 pf v ce = 3 v, i e = 0, f = 1 mhz * 2 insertion power gain |s 21e | 2 79 dbv ce = 3 v, i c = 7 ma, f = 1 ghz noise figure nf 1.2 2.5 db v ce = 3 v, i c = 7 ma, f = 1 ghz *1 pulse measurement ; pw 350 m s, duty cycle 2 % pulsed. *2 measured with 3 terminals bridge, emitter and case should be grounded. leshan radio company, ltd. L2SC4226QT1-2/5
typical characteristics (t a = 25 ?c) total power dissipation
vs. ambient temperature
t a ?ambient temperature ??
p t ?total power dissipation ?mw
collector current vs.
base to emitter voltage
v be ?base to emitter voltage ?v
i c ?collector current ?ma
collector current vs.
collector to emitter voltage
v ce ?collector to emitter voltage ?v
i c ?collector current ?ma
dc current gain vs.
collector current
i c ?collector current ?ma
h fe ?dc current gain
gain bandwidth product
vs. collector current
i c ?collector current ?ma
f t ?gain bandwidth product ?ghz
insertion power gain vs.
collector current
i c ?collector current ?ma
|s 21e | 2 ?insertion power gain ?db
v ce = 3 v
f = 1.0 ghz
200
100
20
10
0
0.5
1.0
v ce = 3 v
25
20
15
10
5
0
5
10
v ce = 3 v
f = 1.0 ghz
200
100
50
20
10
0.5
1
5
10
50
v ce = 3 v
i b = 160 a
free air
0
50
100
150
m
140 a
m
120 a
m
100 a
m
80 a
m
60 a
m
40 a
m
20 a
m
20
10
5
2
1
0.5
1
5
10
50
15
10
5
0
0.5
1
5
10
50
100
L2SC4226QT1-3/5 leshan radio comp any , ltd. L2SC4226QT1
noise figure vs.
collector current
i c ?collector current ?ma
nf ?noise figure ?db
insertion power gain vs. frequency
f ?frequency ?ghz
|s 21e | 2 ?insertion power gain ?db
feed-back capacitance vs.
collector to base voltage
v cb ?collector to base voltage ?v
c re ?feed-back capacitance ?pf
6
4
2
0
0.5
1
5
10
50
100
v ce = 3 v
f = 1 ghz
24
20
16
12
8
4
0
0.1
0.2
0.5
1.0
2.0
5.0
v ce = 3 v
i c = 7 ma
1
2
5
10
20
50
f = 1 mhz
5.0
1.0
0.5
0.2
0.1
2.0
L2SC4226QT1-4/5 leshan radio comp any , ltd. l 2sc4226qt1
0.7 1.9 0.028 0.65 0.025 0.65 0.025 inches mm 0.075 0.035 0.9 pin 1. base 2. emitter 3. collector notes: 1 . dimension i ng and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. dim min max min max millimeters inches a 0.071 0.087 1.80 2.20 k 0.017 ref 0.425 ref l 0.026 bsc 0.650 bsc n 0.028 ref 0.700 ref s 0.079 0.095 2.00 2.40 b 0.045 0.053 1.15 1.35 c 0.032 0.040 0.80 1.00 d 0.012 0.016 0.30 0.40 g 0.047 0.055 1.20 1.40 h 0.000 0.004 0.00 0.10 j 0.004 0.010 0.10 0.25 c n a l d g s b h j k 3 12 0.05 (0.002) sc - 70 / sot - 323 leshan radio comp any , ltd. l 2sc4226qt1 L2SC4226QT1-5/5
|
