?2011fairchildsemiconductorinternational rev.a4,oct2011 FQD4P25TM_ws / fqu4p25 october 27, 2011 FQD4P25TM_ws / fqu4p25 250v p-channel mosfet general description these pchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planarstripe,dmostechnology. thisadvancedtechnologyisespeciallytailoredtominimiz e onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalancheandcommutationmode.thesedevicesarewell suitedforhighefficiencyswitchingdc/dcconverters. features ? 3.1a,250v,r ds(on) =2.1 @v gs =10v ? lowgatecharge(typical10nc) ? lowcrss(typical10.3pf) ? fastswitching ? 100%avalanchetested ? improveddv/dtcapability ? rohscompliant absolute maximum ratings t c =25cunlessotherwisenoted thermal characteristics symbol parameter FQD4P25TM_ws / fqu4p25 units v dss drainsourcevoltage 250 v i d draincurrent continuous(t c =25c) 3.1 a continuous(t c =100c) 1.96 a i dm draincurrent pulsed (note1) 12.4 a v gss gatesourcevoltage 30 v e as singlepulsedavalancheenergy (note2) 280 mj i ar avalanchecurrent (note1) 3.1 a e ar repetitiveavalancheenergy (note1) 4.5 mj dv/dt peakdioderecoverydv/dt (note3) 5.5 v/ns p d powerdissipation(t a =25c)* 2.5 w powerdissipation(t c =25c) 45 w derateabove25c 0.36 w/c t j ,t stg operatingandstoragetemperaturerange 55to+150 c t l maximumleadtemperatureforsolderingpurposes, 1/8 " fromcasefor5seconds 300 c symbol parameter typ max units r jc thermalresistance,junctiontocase 2.78 c / w r ja thermalresistance,junctiontoambient* 50 c / w r ja thermalresistance,junctiontoambient 110 c / w *whenmountedontheminimumpadsizerecommended(pc bmount) i-pak fqu series d-pak fqd series g s d g s d ? ? s d g
?2011fairchildsemiconductorinternational FQD4P25TM_ws / fqu4p25 (note4) (note4,5) (note4,5) (note4) rev.a4,oct2011 electrical characteristics t c =25cunlessotherwisenoted notes: 1.repetitiverating:pulsewidthlimitedbymaximumj unctiontemperature 2.l=46.6mh,i as =3.1a,v dd =50v,r g =25 , startingt j =25c 3.i sd 4.0a,di/dt 300a/ s,v dd bv dss, startingt j =25c 4.pulsetest:pulsewidth 300 s,dutycycle 2% 5.essentiallyindependentofoperatingtemperature symbol parameter test conditions min typ max units off characteristics bv dss drainsourcebreakdownvoltage v gs =0v,i d =250 a 250 v bv dss / t j breakdownvoltagetemperature coefficient i d =250 a,referencedto25c 0.21 v/c i dss zerogatevoltagedraincurrent v ds =250v,v gs =0v 1 a v ds =200v,t c =125c 10 a i gssf gatebodyleakagecurrent,forward v gs =30v,v ds =0v 100 na i gssr gatebodyleakagecurrent,reverse v gs =30v,v ds =0v 100 na on characteristics v gs(th) gatethresholdvoltage v ds =v gs ,i d =250 a 3.0 5.0 v r ds(on) staticdrainsource onresistance v gs =10v,i d =1.55a 1.63 2.1 g fs forwardtransconductance v ds =40v,i d =1.55a 2.0 s dynamic characteristics c iss inputcapacitance v ds =25v,v gs =0v, f=1.0mhz 325 420 pf c oss outputcapacitance 65 85 pf c rss reversetransfercapacitance 10 13 pf switching characteristics t d(on) turnondelaytime v dd =125v,i d =4.0a, r g =25 9.5 30 ns t r turnonrisetime 60 130 ns t d(off) turnoffdelaytime 14 40 ns t f turnofffalltime 27 65 ns q g totalgatecharge v ds =200v,i d =4.0a, v gs =10v 10.3 14 nc q gs gatesourcecharge 2.7 nc q gd gatedraincharge 5.2 nc drain-source diode characteristics and maximum rati ngs i s maximumcontinuousdrainsourcediodeforwardcurrent 3.1 a i sm maximumpulseddrainsourcediodeforwardcurrent 12.4 a v sd drainsourcediodeforwardvoltage v gs =0v,i s =3.1a 5.0 v t rr reverserecoverytime v gs =0v,i s =4.0a, di f /dt=100a/ s 140 ns q rr reverserecoverycharge 0.64 c
?2011fairchildsemiconductorinternational FQD4P25TM_ws / fqu4p25 rev.a4,oct2011 0.0 0.5 1.0 1.5 2.0 2.5 3.0 10 1 10 0 10 1 150 notes: 1.v gs =0v 2.250 spulsetest 25 i dr ,reversedraincurrent[a] v sd ,sourcedrainvoltage[v] 2 4 6 8 10 10 1 10 0 10 1 150 25 55 notes: 1.v ds =50v 2.250 spulsetest i d ,draincurrent[a] v gs ,gatesourcevoltage[v] 10 1 10 0 10 1 10 2 10 1 10 0 10 1 v gs top:15.0v 10.0v 8.0v 7.0v 6.5v 6.0v bottom:5.5v notes: 1.250 spulsetest 2.t c =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 0 3 6 9 12 0 2 4 6 8 note:t j =25 v gs =20v v gs =10v r ds(on) [ ], drainsourceonresistance i d ,draincurrent[a] 0 2 4 6 8 10 12 0 2 4 6 8 10 12 v ds =125v v ds =50v v ds =200v note:i d =4.0a v gs ,gatesourcevoltage[v] q g ,totalgatecharge[nc] 10 1 10 0 10 1 0 100 200 300 400 500 600 700 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes: 1.v gs =0v 2.f=1mhz c rss c oss c iss capacitance[pf] v ds ,drainsourcevoltage[v] typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics
?2011fairchildsemiconductorinternational FQD4P25TM_ws / fqu4p25 rev.a4,oct2011 1 0 5 1 0 4 1 0 3 1 0 2 1 0 1 1 0 0 1 0 1 1 0 1 1 0 0 n o te s : 1 .z j c ( t) = 2 . 7 8 /w m a x . 2 .d u ty f a c t o r , d = t 1 /t 2 3 .t j m t c = p d m * z j c ( t) s in g le p u ls e d = 0 .5 0 .0 2 0 .2 0 .0 5 0 .1 0 .0 1 z jc (t),thermalresponse t 1 , s q u a r e w a v e p u ls e d u r a t io n [ s e c ] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 i d ,draincurrent[a] t c ,casetemperature[ ] 10 0 10 1 10 2 10 1 10 0 10 1 dc 10ms 1ms 100 s operationinthisarea islimitedbyr ds(on) notes: 1.t c =25 o c 2.t j =150 o c 3.singlepulse i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 100 50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes: 1.v gs =10v 2.i d =2.0a r ds(on) ,(normalized) drainsourceonresistance t j ,junctiontemperature[ o c] 100 50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 note: 1.v gs =0v 2.i d =250a bv dss ,(normalized) drainsourcebreakdownvoltage t j ,junctiontemperature[ o c] typical characteristics (continued) figure 9. maximum safe operating area figure 10. max imum drain current vs. case temperature figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature figure 11. transient thermal response curve t 1 p dm t 2
?2011fairchildsemiconductorinternational FQD4P25TM_ws / fqu4p25 rev.a4,oct2011 charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v sametype asdut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v sametype asdut v ds v gs 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v ds v gs 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as = l i as 2 2 1 bv dss v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as = l i as 2 2 1 e as = l i as 2 2 1 2 1 bv dss v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & wavef orms
?2011fairchildsemiconductorinternational FQD4P25TM_ws / fqu4p25 rev.a4,oct2011 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g complimentofdut (nchannel) v gs ? dv/dt controlledbyr g ? i sd controlledbypulseperiod v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd bodydiode forwardvoltagedrop v sd i fm ,bodydiodeforwardcurrent bodydiodereversecurrent i rm bodydioderecovery dv/dt di/dt d= gatepulsewidth gatepulseperiod dut v ds + _ driver r g complimentofdut (nchannel) v gs ? dv/dt controlledbyr g ? i sd controlledbypulseperiod v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd bodydiode forwardvoltagedrop v sd i fm ,bodydiodeforwardcurrent bodydiodereversecurrent i rm bodydioderecovery dv/dt di/dt d= gatepulsewidth gatepulseperiod d= gatepulsewidth gatepulseperiod
?2011fairchildsemiconductorinternational FQD4P25TM_ws / fqu4p25 rev.a4,oct2011 dpak mechanical dimensions dimensionsinmillimeters
?2011fairchildsemiconductorinternational FQD4P25TM_ws / fqu4p25 rev.a4,oct2011 ipak mechanical dimensions dimensionsinmillimeters
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