smd type ic www.kexin.com.cn 1 smd type ic tssop-8 unit: mm 1:drain1 2 : source1 3 : source1 4:gate1 5:gate2 6 : source2 7 : source2 8:drain2 mos field effect transistor KPA1873 features 2.5 v drive available low on-state resistance r ds(on)1 =23m typ. (v gs =4.5v,i d =3.0a) r ds(on)2 =24m typ. (v gs =4.0v,i d =3.0a) r ds(on)3 =28m typ. (v gs =3.1v,i d =3.0a) r ds(on)4 =29m typ. (v gs =2.5v,i d =3.0a) built-in g-s protection diode against esd absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage (v gs =0) v dss 20 v gate to source voltage (v ds =0) v gss 12 v drain current (dc) ta = 25 i d(dc) 6 a drain current (pulse) *1 i d (pulse) 80 a total power dissipation(2 unit) *2 p t 2.0 w channel temperature t ch 150 storage temperature t stg -55to+150 *1 pw 10 s, duty cycle 1% *2 mounted on ceramic substrate of 5000mm 2 x1.1 mm
www.kexin.com.cn 2 smd type ic smd type ic KPA1873 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit zero gate voltage drain current i dss v ds =20v,v gs =0 10 a gate leakage current i gss v gs = 12v, v ds =0 10 a gate cut-off voltage v gs(off) v ds =10v,i d = 1 ma 0.5 1.0 1.5 v forward transfer admittance | y fs |v ds =10v,i d =3.0a 5 s r ds(on)1 v ds =4.5v,i d =3.0a 131823 m r ds(on)2 v gs =4.0v,i d =3.0a 141924 m r ds(on)3 v gs =3.1v,i d = 3.0 a 14.5 21.5 28 m r ds(on)4 v gs =2.5v,i d = 3.0 a 15 24.5 29 m input capacitance c iss 705 pf output capacitance c oss 205 pf reverse transfer capacitance c rss 145 pf turn-on delay time t d(on) 60 ns rise time t r 310 ns turn-off delay time t d(off) 380 ns fall time t f 420 ns total gate charge q g 9.0 nc gate to source charge q gs 2.0 nc gate to drain charge q gd 4.0 nc body diode forward voltage v f(s-d) i f =6.0a,v gs = 0 0.84 v reverse recovery time trr i f =6.0a,v gs = 0 v 480 ns reverse recovery charge qrr d i /d t =50a/ s 1200 nc v ds =10v,v gs =0,f=1mhz i d =6.0a,v dd = 16v, v gs =4.0v i d =3.0a,v gs(on) =4.0v,v dd =10 v,r g =10 drain to source on-state resistance
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