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january 2010 doc id 14595 rev 2 1/15 15 STV240N75F3 n-channel 75 v, 2.3 m ? , 240 a powerso-10 stripfet? iii power mosfet features conduction losses reduced low profile, very low parasitic inductance application switching applications description this stripfet? iii power mosfet technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performances. figure 1. internal sc hematic diagram and connection diagram (top view) type v dss r ds(on) max i d STV240N75F3 75 v < 2.6 m ? 240 a 1 10 powerso-10 table 1. device summary order code marking package packaging STV240N75F3 240n75f3 powerso-10 tape and reel www.st.com
contents STV240N75F3 2/15 doc id 14595 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.1 tape and reel for powerso-10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STV240N75F3 electrical ratings doc id 14595 rev 2 3/15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 75 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 240 a i d drain current (continuous) at t c = 100 c 170 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 960 a p tot (2) 2. this value is rated according to rthj-c total dissipation at t c = 25 c 300 w derating factor 2.0 w/c e as (3) 3. starting tj = 25 c, i d = 60 a, v dd = 15 v single pulse avalanche energy 600 mj t stg storage temperature -55 to 175 c t j operating junction temperature c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.5 c/w r thj-pcb (1) 1. when mounted on 1 inch2 fr-4 2 oz cu. thermal resistance junction-pcb max 35 c/w
electrical characteristics STV240N75F3 4/15 doc id 14595 rev 2 2 electrical characteristics (t case =25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 75 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating, t c = 125 c 10 100 a a i gss gate body leakage current (v ds = 0) v ds = 20 v 200 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 120 a 2.3 2.6 m ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs =0 - 6800 1100 50 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 37.5 v, i d = 120 a, v gs = 10 v (see figure 14 ) - 85 30 26 - nc nc nc
STV240N75F3 electrical characteristics doc id 14595 rev 2 5/15 table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r turn-on delay time rise time v dd = 37.5 v, i d = 60 a r g = 4.7 ? , v gs = 10 v, (see figure 13 ) - 25 70 - ns ns t d(off) t f turn-off delay time fall time v dd = 37.5 v, i d = 60 a r g = 4.7 ? , v gs = 10 v, (see figure 13 ) - 100 15 - ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sd (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 240 960 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 120 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 120 a, di/dt = 100 a/s v dd = 20 v, t j = 150 c (see figure 18 ) - 80 180 4.5 ns nc a
electrical characteristics STV240N75F3 6/15 doc id 14595 rev 2 2.1 electrical characteri stics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized bv dss vs temperature figure 7. static drain-source on resistance i d 100 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100 s 1m s 10m s tj=175c tc=25c s ingle p u l s e 1000 am05544v1 10 -5 10 -4 10 - 3 10 -2 10 -1 t p ( s ) 10 - 3 10 -2 k 0.2 0.05 0.02 0.01 0.1 s ingle p u l s e =0.5 10 -1 zth_power s o-10 i d 150 100 50 0 0 1 v d s (v) 3 (a) 2 200 250 5v 6v v g s =10v 3 00 3 50 am05545v1 ) $ 6 '3 6 ! 6 $3 6 (6 r d s (on) 2.0 1. 8 1.6 1.4 0 100 i d (a) (m ? ) 50 150 2.2 2.4 2.6 2. 8 200 3 .0 3 .2 am05546v1
STV240N75F3 electrical characteristics doc id 14595 rev 2 7/15 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics 6 '3t h 4 * ? # norm ) $ ? ! (6 6 3$ ) 3$ ! 6 4 * ? # 4 * ? # 4 * ? # (6
test circuits STV240N75F3 8/15 doc id 14595 rev 2 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive wavefo rm figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STV240N75F3 test circuits doc id 14595 rev 2 9/15 figure 19. gate charge test waveform figure 20. diode recovery times waveform s c15250 s c15260
package mechanical data STV240N75F3 10/15 doc id 14595 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
STV240N75F3 package mechanical data doc id 14595 rev 2 11/15 dim. mm inch min. typ. max. min. typ. max. a 3.35 3.65 0.132 0.144 a1 0.00 0.10 0.000 0.004 b 0.40 0.60 0.016 0.024 c 0.35 0.55 0.013 0.022 d 9.40 9.60 0.370 0.378 d1 7.40 7.60 0.291 0.300 e 1.27 0.050 e 9.30 9.50 0.366 0.374 e1 7.20 7.40 0.283 0.291 e2 7.20 7.60 0.283 0.300 e3 6.10 6.35 0.240 0.250 e4 5.90 6.10 0.232 0.240 f 1.25 1.35 0.049 0.053 h 0.50 0.002 h 13.80 14.40 0.543 0.567 l 1.20 1.80 0.047 0.071 q 1.70 0.067 0 o 8 o detail "a" plane seating l a1 f a1 h a d d1 = = = = = = e4 0.10 a e1 e3 c q a = = b b detail "a" seating plane = = = = e2 6 10 5 1 e b he m 0.25 = = = = 0068039-c powerso-10 mechanical data
packaging information STV240N75F3 12/15 doc id 14595 rev 2 5 packaging information 5.1 tape and reel for powerso-10 note: 10 sprocket hole pitch cumulative tolerance 0.2 mm. figure 21. carrier tape drawing (a) table 8. carrier tape dimensions ref. mm min. typ. max. a0 14.9 15.0 15.1 b0 9.9 10.0 10.1 k0 4.15 4.25 4.35 f 11.4 11.5 11.6 e 1.65 1.75 1.85 w 23.7 24.0 24.3 p2 1.9 2.0 2.1 p0 3.9 4.0 4.1 p1 23.9 24.0 24.1 t 0.025 0.30 0.35 d(?) 1.50 1.55 1.60 !- v
STV240N75F3 packaging information doc id 14595 rev 2 13/15 note: 10 sprocket hole pitch cumulative tolerance 0.2 mm. figure 22. reel drawing (b) a. drawing is not to scale. table 9. reel dimensions ref. mm min. typ. max. a 330 b1.5 c12.81313.2 d20.2 n60 g 24.4 t 30.4 b. drawing is not to scale. table 10. base and bulk quantities base qty. bulk qty. 600 ! $ " & ull radius 4 ape slo t ) n core for 4 ape s t ar t mm min wid t h ' measured !t hub # . mm min ! ccess hole !t slo t loca t ion 4 !- v
revision history STV240N75F3 14/15 doc id 14595 rev 2 6 revision history table 11. document revision history date revision changes 02-apr-2008 1 initial release 21-jan-2010 2 ? document status promoted from preliminary data to datasheet. ? inserted new section 5: packaging information .
STV240N75F3 doc id 14595 rev 2 15/15 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in military , air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2010 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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