unisonic technologies co., ltd ut4413 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2008 unisonic technologies co., ltd qw-r502-198.a p-channel enhancement mode ? description the ut4413 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) = 8.5m ? @v gs = -10 v * low capacitance * low gate charge * fast switching capability * avalanche energy specified ? symbol gate source drain *pb-free plating product number: ut4413l ? ordering information ordering number normal lead free plating package packing UT4413-S08-R ut4413l-s08-r sop-8 tape reel ut4413-s08-t ut4413l-s08-t sop-8 tube
ut4413 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-198.a ? pin configuration
ut4413 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-198.a ? absolute maximum ratings (t a = 25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -30 v gate-source voltage v gss 25 v continuous drain current (note 1) i d -15 a pulsed drain current (note 2) i dm -80 a power dissipation(t c =25c) p d 3 w junction a temperature t j +150 strong temperature t stg -55 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol min typ max unit junction-to-ambient ja 62 75 /w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =-250 a -30 v drain-source leakage current i dss v ds =-24 v, v gs =0 v -1 a drain-source breakdown voltage i gss v ds =0 v, v gs = 25 v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =-250 a -1.5 -2.2 -3.5 v on state drain current i d(on) v ds =-5v, v gs =-10 v -60 a v gs =-20v, i d =-15a 5.5 7 m ? v gs =-10 v, i d =-15 a 6.6 8.5 static drain-source on-resistance r ds(on) v gs =-6 v, i d =-10 a 8.2 m ? dynamic parameters input capacitance c iss 4245 5500 output capacitance c oss 983 reverse transfer capacitance c rss v ds =-15v, v gs =0v, f=1mhz 689 pf switching parameters total gate charge q g 69 90 gate source charge q gs 15.2 gate drain charge q gd v ds =-15v, v gs =-10v, i d =-15a 18.8 nc turn-on delay time t d(on) 16.5 turn-on rise time t r 23.5 turn-off delay time t d(off) 116 turn-off fall-time t f v gs =-10v,v ds =-15v,r l =1.0 ? , r gen =3 ? 82 ns source- drain diode ratings and characteristics drain-source diode forward voltage(note2) v sd i s =-1a,v gs =0v -0.72 -1 v maximum continuous drain-source diode forward current i s 5 a reverse recovery time t rr i f =-15 a, di/dt=100a/ s 59 77 ns reverse recovery charge q rr i f =-15 a, di/dt=100a/ s 55 nc note: 1. pulse width limited by t j(max) 2. pulse width 300us, duty cycle 0.5% max. 3. surface mounted on 1 in 2 copper pad of fr4 board
ut4413 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-198.a ? typical characteristics 30 25 20 15 10 5 0 2 2.5 3 3.5 4 4.5 5 4 3 2 1 0 0 5 10 15 20 25 30 25 125 v ds =-5v -4.5v -5v -10v -4v v gs =-3.5v on-region characteristics drain current,-i d (a) drain current,-i d (a) transfer characteristics gate to source voltage,-v gs (v) drain to source voltage,-v ds (v) drain to source on-resistance, r ds(on) (m ) normalized on-resistance i d =-15a 125 25 125 25 body-diode characteristics gate to source voltage,-v gs (v) drain to source on-resistance, r ds(on) (m ) on-resistance vs. gate-source voltage 1.0e+01 1.0e+00 1.0e-01 1.0e-02 1.0e-03 1.0e-04 1.0e-05 1.0e-06 reverse drain current,-i s (a) 0.0 0.2 0.4 0.6 0.8 1.0 body diode forward voltage,-v sd (v) 30 25 20 15 10 5 0 4 8 12 16 20
ut4413 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-198.a ? typical characteristics(cont.) 30 25 20 15 10 5 0 0 1000 2000 3000 4000 5000 6000 10 8 6 4 2 0 010203040506070 gate-charge characteristics v ds =-15v i d =-15a gate to source voltage,-v gs (v) gate charge,-q g (nc) c a p a c i t a n c e ( p f ) drain to source voltage,-v ds (v) capacitance characteristics c iss c oss c rss drain current,-i d (a) power (w) normalized transient thermal resistance,z ja
ut4413 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-198.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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