STT818B high gain low voltage pnp power transistor n very low collector to emitter saturation voltage n dc current gain > 100 (h fe ) n 3 a continuous collector current (i c ) n surface-mounting sot23-6l package in tape & reel applications n power management in portable equipments n switching regulator in battery charger applications description the device is manufactured in low voltage pnp planar technology by using a obase islando layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. ? internal schematic diagram july 2002 sot23-6l (tsop6) absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e =0) -30 v v ceo collector-emitter voltage (i b =0) -30 v v ebo emitter-base voltage (i c =0) -5 v i c collector current -3 a i cm collector peak current -6 a i b base current -0.2 a i bm base peak current -0.5 a p tot total dissipation at t c =25 o c1.2w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c type marking STT818B 818b 1/5
thermal data r thj-amb (1) thermal resistance junction-ambient max 104.2 o c/w (1) package mounted on fr4 pcb 25mm x 25mm. electrical characteristics (t case =25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e =0) v cb =-30v v cb =-30v t c =125 o c -0.1 -20 m a m a i ebo emitter cut-off current (i c =0) v eb =-5v -0.1 m a v ( br)ceo * collector-emitter breakdown voltage (i b =0) i c =-10ma -30 v v ce(sat) * collector-emitter saturation voltage i c =-0.5a i b =-5ma i c =-2a i b =-20ma i c =-1.2a i b =-20ma -0.075 -0.21 -0.15 -0.5 -0.25 v v v v be(s at) * base-emitter saturation voltage i c =-0.5a i b =-5ma i c =-1.2a i b =-20ma i c =-2a i b =-20ma -0.74 -1.1 -1.1 -1.2 v v v v be(on) * base-emitter voltage i c =-0.5a v ce =-2 v -0.71 -1.1 v h fe * dc current gain i c =-0.5a v ce =-1v i c =-2.5a v ce =-3v 100 100 * pulsed: pulse duration = 300 m s, duty cycle 1.5 %. safe operating area derating curve STT818B 2/5
dc current gain collector-emitter saturation voltage switching times resistive load dc current gain base-emitter saturation voltage switching times resistive load STT818B 3/5
dim. mm mils min. typ. max. min. typ. max. a 0.90 1.45 0.035 0.057 a1 0.00 0.15 0.000 0.006 a2 0.90 1.30 0.035 0.051 b 0.25 0.50 0.010 0.020 c 0.09 0.20 0.004 0.008 d 2.80 3.10 0.110 0.122 e 2.60 3.00 0.102 0.118 e1 1.50 1.75 0.059 0.069 l 0.35 0.55 0.014 0.022 e 0.95 0.037 e1 1.90 0.075 aa2 a1 b e e1 c e l d e1 sot23-6l mechanical data STT818B 4/5
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