ao4916, AO4916L symbol units v ds v v gs v t a =25c t a =70c i dm v ka v t a =25c t a =70c i fm t a =25c t a =70c t j , t stg c symbol units r jl r jl 110 maximum junction-to-lead c steady-state 32 40 thermal characteristics schottky maximum junction-to-ambient a t 10s r ja 47.5 62.5 c/w maximum junction-to-ambient a steady-state 71 62.5 c/w maximum junction-to-ambient a steady-state 74 110 maximum junction-to-lead c steady-state 35 40 maximum junction-to-ambient a t 10s r ja 48 parameter: thermal characteristics mosfet typ max w 1.28 1.28 junction and storage temperature range -55 to 150 -55 to 150 power dissipation p d 22 a 2 pulsed forward current b 40 absolute maximum ratings t a =25c unless otherwise noted parameter mosfet schottky drain-source voltage 30 gate-source voltage 20 continuous drain current a i d 8.5 6.6 a pulsed drain current b 40 schottky reverse voltage 30 continuous forward current a i f 3 features v ds (v) = 30v i d = 8.5a r ds(on) < 17m ? (v gs = 10v) r ds(on) < 27m ? (v gs = 4.5v) schottky v ds (v) = 30v, i f = 3a, v f =0.5v@1a the ao4916 uses advanced trench technology to provide excellent r ds(on) and low gate charge. the two mosfets make a compact and efficient switch and synchronous rectifier combination for use in dc- dc converters. a schottky diode is co-packaged in parallel with the synchronous mosfet to boost efficiency further. AO4916L ( green product ) is offered in a lead-free package. soic-8 g1 s1/ a d2 d2 d1/s2/k d1 / s2 /k d1/s2/k g2 1 2 3 4 8 7 6 5 g1 d1 s1 k a g2 d2 s2 n-channel enhancement mode field general description effect transistor with schcttky diode www.freescale.net.cn 1 / 7
ao4916, AO4916L symbol min typ max units bv dss 30 v 0.005 1 t j =55c 5 i gss 100 na v gs(th) 1 1.8 3 v i d(on) 40 a 14 17 t j =125c 20 25 21 27 m ? g fs 23 s v sd 0.76 1 v i s 3a c iss 1040 1250 pf c oss 180 pf c rss 110 pf r g 0.35 0.7 0.85 ? q g (10v) 19.2 24 nc q g (4.5v) 9.36 12 nc q gs 2.6 nc q gd 4.2 nc t d(on) 5.2 7.5 ns t r 4.4 6.5 ns t d(off) 17.3 25 ns t f 3.3 5 ns t rr 16.7 21 ns q rr 9.3 11 nc schottky parameters v f 0.45 0.5 v 0.007 0.05 3.2 10 12 20 c t 37 pf this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. ma v r =30v, t j =125c v r =30v, t j =150c junction capacitance v r =15v forward voltage drop i f =1.0a i rm maximum reverse leakage current v r =30v maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =10v, v ds =15v, i d =8.5a total gate charge gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.8 ? , r gen =3 ? turn-off fall time total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz m ? v gs =4.5v, i d =6a i s =1a,v gs =0v v ds =5v, i d =8.5a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =8.5a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =8.5a reverse transfer capacitance i f =8.5a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. www.freescale.net.cn 2 / 7
ao4916, AO4916L typical electrical and thermal characteristic s 13.4 16 22 26 0.76 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 0 4 8 12 16 20 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 10 12 14 16 18 20 22 24 26 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25 c 125 c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 10 20 30 40 50 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10 v i d =8.5a 25c 125 c i d =8.5a www.freescale.net.cn 3 / 7
ao4916, AO4916L typical electrical and thermal characteristic s 13.4 16 22 26 0.76 0 2 4 6 8 10 0 4 8 12 16 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0 .1 s 1 s 10s dc r ds(on) limi ted t j(max) =150c t a =25c v ds =15v i d =8.5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, sin g le p ulse t j(max) =150c t a =25c 10 s www.freescale.net.cn 4 / 7
so-8 package marking description ao4916 marking description version document no. title rev c pd-00071 note: logo - aos logo 4916 - part number code. f&a - foundry and assembly location y - year code w - week code. l t - assembly lot code code ao4916 4916 part no. description AO4916L standard product green product 4916 standard product green product www.freescale.net.cn 5 / 7
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so-8 tape and reel data so-8 carrier tape so-8 reel so-8 tape leader / trailer & orientation www.freescale.net.cn 7 / 7
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