ds23043 rev. d-2 1 of 2 sbl530-sbl560 www.diodes.com diodes incorporated sbl530 - sbl560 5.0a schottky barrier rectifier features l m a n p d e k c b j g r pin 1 + pin 1 pin 2 pin2- case + to-220ac dim min max a 14.22 15.88 b 9.65 10.67 c 2.54 3.43 d 5.84 6.86 e 6.35 g 12.70 14.73 j 0.51 1.14 k 3.53 4.09 l 3.56 4.83 m 1.14 1.40 n 0.30 0.64 p 2.03 2.92 r 4.83 5.33 all dimensions in mm maximum ratings and electrical characteristics @ t a = 25 c unless otherwise specified schottky barrier chip guard ring die construction for transient protection low power loss, high efficiency high surge capability high current capability and low forward voltage drop for use in low voltage, high frequency inverters, free wheeling, and polarity protection application plastic material: ul flammability classification rating 94v-0 mechanical data case: molded plastic terminals: plated leads solderable per mil-std-202, method 208 polarity: see diagram weight: 2.3 grams (approx.) mounting position: any marking: type number single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol sbl 530 sbl 535 sbl 540 sbl 545 sbl 550 sbl 560 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 30 35 40 45 50 60 v rms reverse voltage v r(rms) 21 24.5 28 31.5 35 42 v average rectified output current (note 1) @ t c = 95 c i o 5.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 175 a forward voltage drop @ i f = 5.0a, t c = 25 c v fm 0.55 0.70 v peak reverse current @t c = 25 c at rated dc blocking voltage @ t c = 100 c i rm 0.5 33 ma typical junction capacitance (note 2) c j 500 pf typical thermal resistance junction to case (note 1) r jc 3 c/w operating and storage temperature range t j, t stg -65 to +150 c notes: 1. thermal resistance junction to case mounted on heatsink. 2. measured at 1.0mhz and applied reverse voltage of 4.0v dc.
ds23043 rev. d-2 2 of 2 sbl530-sbl560 www.diodes.com 0.1 1.0 10 100 0.2 0.4 0.6 i , instantaneous forward current (a) f v , instantaneous forward voltage (v) f fi g . 2 t y pical forward characteristics per element sbl530 - sbl545 sbl550 - sbl560 0.8 50 100 150 0 200 250 300 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60 hz fi g . 3 max non-re p etitive sur g e current 8.3 ms single half-sine-wave jedec method 100 1000 4 000 0.1 1.0 10 100 c , capacitance (pf) j v , reverse voltage (v) r fi g . 4 t y pical junction capacitance per element t = 25 c j 0.01 0.1 1.0 10 100 0 40 80 120 i , instantaneous reverse current (ma) r percent of rated peak reverse voltage (%) fig. 5 typical reverse characteristics t = 100 c j t = 75 c j t = 25 c j 0 1 2 3 4 5 0 50 100 150 i , average forward current (a) (av) t , case temperature (c) c fi g . 1 forward current deratin g curve
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