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rev. 0.95 / july.01 1 rimm module with 256/288mb rdrams preliminary tm revision history * rev. 0.95 date : 2001.07.23 1. page2, 7, 8, 10, 12 : add 2d rimm part
rev. 0.95 / july.01 2 rimm module with 256/288mb rdrams preliminary tm ? figure 1: rambus rimm module without heat spreader overview the rambus ? rimm tm module is a general purpose high - performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required. the rambus rimm module consist of 256/288mb direct rambus dram devices. these are extremely high - speed cmos drams organized as 16m words by 16/18 bits. the use of rambus signaling level (rsl) technology permits 600mhz ,711mhz or 800mhz transfer rates while using conventional system and board design technologies. rdram devices are capable of sustained data transfers at 1.25 ns per two bytes (10ns per 16 bytes). the rdram architecture enables the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. the separate control and data buses with independent row and column control yield over 95% bus efficiency. the direct rdram's 32 - banks architecture supports up to four simultaneous transactions per device. features w high speed 800,711 and 600 mhz rdram storage w 184 edge connector pads with 1 mm pad spacing w maximum module pcb size: 133.5mm x 34.93mm x 1.37mm(5.21 ? x 1.375 ? x 0.05 ? ) w gold plated edge connector pad contacts w serial presence detect(spd) support w operates from a 2.5 volt supply ( 5%) w powerdown self refresh modes w m bga package (92 balls) w separate row and column buses for higher efficiency key timing parameters/part numbers the following table lists the frequency and latency bins available from rimm modules. form factor the rambus rimm modules are offered in a 184 - pad 1mm edge connector pad pitch from factor suitable for either 184 or 168 contact rimm connectors. the rimm module is suitable for desktop and other system applications. figure 1 below, shows an eight device rambus rimm module without heat spreader. table 1: part number by frequency and latency organization i/o freq. mhz t rac ( row access time ) ns 32m x 16/18 600 53 32m x 16/18 711 45 32m x 16/18 800 40 128 m x 16/18 600 53 128 m x 16/18 711 45 128 m x 16/18 800 45 128 m x 16/18 800 40 32m x 16/18 800 45 256 m x 16/18 600 53 256 m x 16/18 711 45 256 m x 16/18 800 45 256 m x 16/18 800 40 part number hymr23216(18)h - 653 hymr23216(18)h - 745 hymr23216(18)h - 840 hymr212816(18)h - 653 hymr212816(18)h - 745 hymr212816(18)h - 845 hymr212816(18)h - 840 hymr23216(18)h - 845 hymr225616(18)h - 653 hymr225616(18)h - 745 hymr225616(18)h - 845 hymr225616(18)h - 840 64 m x 16/18 600 53 64 m x 16/18 711 45 64 m x 16/18 800 40 64 m x 16/18 800 45 hymr26416(18)h - 653 hymr26416(18)h - 745 hymr26416(18)h - 840 hymr26416(18)h - 845
rev. 0.95 / july.01 3 rimm module with 256/288mb rdrams preliminary tm pin pin name pin pin name pin pin name pin pin name a1 gnd b1 gnd a47 nc b47 nc a2 ldqa8 b2 ldqa7 a48 nc b48 nc a3 gnd b3 gnd a49 nc b49 nc a4 ldqa6 b4 ldqa5 a50 nc b50 nc a5 gnd b5 gnd a51 vref b51 vref a6 ldqa4 b6 ldqa3 a52 gnd b52 gnd a7 gnd b7 gnd a53 scl b53 sa0 a8 ldqa2 b8 ldqa1 a54 vdd b54 vdd a9 gnd b9 gnd a55 sda b55 sa1 a10 ldqa0 b10 lcfm a56 svdd b56 svdd a11 gnd b11 gnd a57 swp b57 sa2 a12 lctmn b12 lcfmn a58 vdd b58 vdd a13 gnd b13 gnd a59 rsck b59 rcmd a14 lctm b14 nc a60 gnd b60 gnd a15 gnd b15 gnd a61 rdqb7 b61 rdqb8 a16 nc b16 lrow2 a62 gnd b62 gnd a17 gnd b17 gnd a63 rdqb5 b63 rdqb6 a18 lrow1 b18 lrow0 a64 gnd b64 gnd a19 gnd b19 gnd a65 rdqb3 b65 rdqb4 a20 lcol4 b20 lcol3 a66 gnd b66 gnd a21 gnd b21 gnd a67 rdqb1 b67 rdqb2 a22 lcol2 b22 lcol1 a68 gnd b68 gnd a23 gnd b23 gnd a69 rcol0 b69 rdqb0 a24 lcol0 b24 ldqb0 a70 gnd b70 gnd a25 gnd b25 gnd a71 rcol2 b71 rcol1 a26 ldqb1 b26 ldqb2 a72 gnd b72 gnd a27 gnd b27 gnd a73 rcol4 b73 rcol3 a28 ldqb3 b28 ldqb4 a74 gnd b74 gnd a29 gnd b29 gnd a75 rrow1 b75 rrow0 a30 ldqb5 b30 ldqb6 a76 gnd b76 gnd a31 gnd b31 gnd a77 nc b77 rrow2 a32 ldqb7 b32 ldqb8 a78 gnd b78 gnd a33 gnd b33 gnd a79 rctm b79 nc a34 lsck b34 lcmd a80 gnd b80 gnd a35 vcmos b35 vcmos a81 rctmn b81 rcfmn a36 sout b36 sin a82 gnd b82 gnd a37 vcmos b37 vcmos a83 rdqa0 b83 rcfm a38 nc b38 nc a84 gnd b84 gnd a39 gnd b39 gnd a85 rdqa2 b85 rdqa1 a40 nc b40 nc a86 gnd b86 gnd a41 vdd b41 vdd a87 rdqa4 b87 rdqa3 a42 vdd b42 vdd a88 gnd b88 gnd a43 nc b43 nc a89 rdqa6 b89 rdqa5 a44 nc b44 nc a90 gnd b90 gnd a45 nc b45 nc a91 rdqa8 b91 rdqa7 a46 nc b46 nc a92 gnd b92 gnd table 2: module pad number and signal names
rev. 0.95 / july.01 4 rimm module with 256/288mb rdrams preliminary tm table 3: module connector pad description module connector pads i/o signal type description a1, a3, a5, a7, a9, a11, a13, a15, a17, a19, a21, a23, a25, a27, a29, a31, a33, a39, a52, a60, a62, a64, a66, a68, a70, a72, a74, a76, a78, a80, a82, a84, a86, a88, a90, a92, b1, b3, b5, b7, b9, b11, b13, b15, b17, b19, b21, b23, b25, b27, b29, b31, b33, b39, b52, b60, b62, b64, b66, b68, b70, b72, b74, b76, b78, b80, b82, b84, b86, b88, b90, b92 gnd ground reference for rdram core and interface. 72 pcb connector pads. b10 i lcfm rsl clock from master. interface clock used for receiving rsl signals from the channel. positive polarity . b12 i lcfmn rsl clock from master. interface clock used for receiving rsl signals from the channel. negative polarity. b81 i rcfmn rsl clock from master. interface clock used for receiv - ing rsl signals from the channel. negative polar- ity . b34 i lcmd v cmos serial command used to read from and write to the control registers. also used for power management. a20, b20, a22, b22, a24 i lcol4.. lcol0 rsl column bus. 5-bit bus containing control and address information for column accesses. a14 i lctm rsl clock to master. interface clock used for transmit- ting rsl signals to the channel. positive polarity. a12 i lctmn rsl clock to master. interface clock used for transmit- ting rsl signals to the channel. negative polarity. a2, b2, a4, b4, a6, b6, a8, b8, a10 i/o ldqa8.. ldqa0 rsl data bus a. a 9-bit bus carrying a byte of read or write data between the channel and the rdram. ldqa8 is non-functional on x16 rdram devices. b32, a32, b30, a30, b28, a28, b26, a26, b24 i/o ldqb8.. ldqb0 rsl data bus b. a 9-bit bus carrying a byte of read or write data between the channel and the rdram. ldqb8 is non-functional on x16 rdram devices. b16, a18, b18 i lrow2.. lrow0 rsl row bus. 3-bit bus containing control and address information for row accesses. a34 i lsck v cmos serial clock input. clock source used to read from and write to the rdram control registers. a16, b14, a38, b38, a40, b40, a77, b79 nc these pads are not connected. these 8 connector pads are reserved for future use. a43, b43, a44, b44, a45, b45, a46, b46, a47, b47, a48, b48, a49, b49, a50, b50 nc these pads are not connected. these 16connector pads art reserved for future use. the 168 contact rimm connector does not connect to these pcb pads. b83 i rcfm rsl clock from master. interface clock used for receiv - ing rsl signals from the channel. positive polarity.
rev. 0.95 / july.01 5 rimm module with 256/288mb rdrams preliminary tm module connector pads i/o signal type description b59 rcmd serial command input used to read from and write to the control registers. also used for power management. i v cmos a73, b73, a71, b71, a69 i rcol4.. rcol0 rsl column bus. 5-bit bus containing control and address information for column accesses. a41, a42, a54, a58, b41, b42, b54, b58 i vdd supply voltage for the rdram core and interface logic. a79 i rctm rsl clock to master. interface clock used for transmit- ting rsl signals to the channel. positive polarity. a81 i rctmn rsl clock to master. interface clock used for transmit- ting rsl signals to the channel. negative polarity. a91, b91, a89, b89, a87, b87, a85, b85, a83 i/o rdqa8.. rdqa0 rsl data bus a. a 9-bit bus carrying a byte of read or write data between the channel and the rdram. rdqa8 is non-functional on x16 rdram devices. b61, a61, b63, a63, b65, a65, b67, a67, b69 i/o rdqb8.. rdqb0 rsl data bus b. a 9-bit bus carrying a byte of read or write data between the channel and the rdram. rdqb8 is non-functional on x16 rdram devices. b77, a75, b75 i rrow2.. rrow0 rsl row bus. 3-bit bus containing control and address information for row accesses. a59 i rsck v cmos serial clock input. clock source used to read from and write to the rdram control registers. b53 i sa0 sv dd serial presence detect address 0. b55 i sa1 sv dd serial presence detect address 1. b57 i sa2 sv dd serial presence detect address 2. a53 i scl sv dd serial presence detect clock. a55 i/o sda sv dd serial presence detect data (open collector i/o) b36 i/o sin v cmos serial i/o for reading from and writing to the control registers. attaches to sio0 of the first rdram on the module. a36 i/o sout v cmos serial i/o for reading from and writing to the control registers. attaches to sio1 of the last rdram on the module. a56, b56 sv dd spd voltage. used for signals scl, sda, swe, sa0, sa1 and sa2. a57 i swp sv dd serial presence detect write protect (active high). when low, the spd can be written as well as read. a35, b35, a37, b37 v cmos cmos i/o voltage. used for signals cmd, sck, sin, sout. a51, b51 vref logic threshold reference voltage for rsl signals.
rev. 0.95 / july.01 6 rimm module with 256/288mb rdrams preliminary tm dqa8 dqa7 dqa6 dqa5 dqa4 dqa3 dqa2 dqa1 dqa0 cfm cfmn ctm ctmn row2 row1 row0 col4 col3 col2 col1 col0 dqb0 dqb1 dqb2 dqb3 dqb4 dqb5 dqb6 dqb7 dqb8 sio0 sio1 sck cmd vref direct rdram (256/288mb) u1 dqa8 dqa7 dqa6 dqa5 dqa4 dqa3 dqa2 dqa1 dqa0 cfm cfmn ctm ctmn row2 row1 row0 col4 col3 col2 col1 col0 dqb0 dqb1 dqb2 dqb3 dqb4 dqb5 dqb6 dqb7 dqb8 sio0 sio1 sck cmd vref direct rdram (256/288mb) u2 ldqa8 ldqa7 ldqa6 ldqa5 ldqa4 ldqa3 ldqa2 ldqa1 ldqa0 lcfm lcfmn lctm lctmn lrow2 lrow1 lrow0 lcol4 lcol3 lcol2 lcol1 lcol0 ldqb0 ldqb1 ldqb2 ldqb3 ldqb4 ldqb5 ldqb6 ldqb7 ldqb8 dqa8 dqa7 dqa6 dqa5 dqa4 dqa3 dqa2 dqa1 dqa0 cfm cfmn ctm ctmn row2 row1 row0 col4 col3 col2 col1 col0 dqb0 dqb1 dqb2 dqb3 dqb4 dqb5 dqb6 dqb7 dqb8 sio0 sio1 sck cmd vref direct rdram (256/288mb) u3 rdqa8 rdqa7 rdqa6 rdqa5 rdqa4 rdqa3 rdqa2 rdqa1 rdqa0 rcfm rcfmn rctm rctmn rrow2 rrow1 rrow0 rcol4 rcol3 rcol2 rcol1 rcol0 rdqb0 rdqb1 rdqb2 rdqb3 rdqb4 rdqb5 rdqb6 rdqb7 rdqb8 sin lsck lcmd v ref sout rlsck rcmd sv dd scl swp sa0 sa1 sa2 vcc scl sda wp a0a1a2 sda serial presence detect 0.1 t sv dd gnd 2 per rdram 0.1 t vdd gnd 1 per 2 rdrams plus one near connector 0.1 t v ref gnd 1 per 2 rdrams 0.1 t v cmos gnd note 1: rambus channel signals form a loop through the rimm module, with the exception of the sio chain. note 2: see serial presence detection specification for information on the spd device and its contents. figure 2: rimm module functional diagram dqa8 dqa7 dqa6 dqa5 dqa4 dqa3 dqa2 dqa1 dqa0 cfm cfmn ctm ctmn row2 row1 row0 col4 col3 col2 col1 col0 dqb0 dqb1 dqb2 dqb3 dqb4 dqb5 dqb6 dqb7 dqb8 sio0 sio1 sck cmd vref direct rdram (256/288mb) un u0
rev. 0.95 / july.01 7 rimm module with 256/288mb rdrams preliminary tm absolute maximum ratings dc recommended electrical conditions a. the tale below shows the number of 256mb or 288mb rdram devi ces contained in a rimm module of listed memory storage capacity parameter min signal max unit voltage applied to any rsl or cmos pin with respect to gnd v i,abs v - 0.3 v dd + 0.3 voltage on vdd with respect to gnd v dd,abs v - 0.5 v dd + 1.0 storage temperature t store o c - 50 100 parameter and conditions signal max unit supply voltage v dd v 2.50 + 0.13 cmos i/o power supply at pad for 2.5v controllers: cmos i/o power supply at pad for 1.8v controllers: v cmos v v 2.5 + 0.25 1.8 + 0.2 min 2.50 - 0.13 2.5 - 0.13 1.8 - 0.1 reference voltage v ref v 1.4 + 0.2 1.4 - 0.2 rsl input low voltage v il v v ref - 0.2 v ref - 0.5 rsl input high voltage v ih v v ref + 0.5 v ref + 0.2 cmos input low voltage v il,cmos v 0.5 v cmos - 0.25 - 0.3 cmos input high voltage v ih,cmos v v cmos + 0.3 0.5 v cmos + 0.25 cmos output low voltage @ i ol,cmos = 1 ma v ol,cmos v 0.3 cmos output high voltage @ i oh,cmos = - 0.25 ma v oh,cmos v v cmos - 0.3 v ref current @ v ref,max i ref a 10 x no. rdrams a - 10 x no. rdrams a cmos input leakage current @ (0 v cmos v dd ) i sck,cmd a 10 x no. rdrams a - 10 x no. rdrams a cmos input leakage current @ (0 v cmos v dd ) i sin,sout a 10.0 - 10.0 rimm module capacity: 512/576 mb 384/432 mb 256/288 mb 128/144 mb number of 256mb or 288mb rdram devices: 16 12 8 4 plate temperature t plate o c - 100 serial presence detector - positive power supply v spd v 3.6 2.2 64/72 mb 2
rev. 0.95 / july.01 8 rimm module with 256/288mb rdrams preliminary tm rimm module current profile a. actual power will depend on individual rdram component specifications, memory controller and usage patterns. please refer to specific rimm module vendor data sheets for additional information. b. i/o current is a function of the % of 1?s, to add i/o power for 50% 1?s for a x16 need to add 257ma or 290ma for x18 ecc modu le for the following : v dd = 2.5v, v term = 1.8v, v ref = 1.4v and v dil = v ref - 0.5v. i dd rimm module capacity: no. of 256/288mb rdrams: 512/576mb 16 384/423mb 12 256/288mb 8 128/144mb 4 64/72mb 2 unit rimm module power conditions a freq. max max max max max i dd1 one rdram in read b , balance in nap mode 800 798 782 767 751 742 ma 711 746 730 714 698 679 600 641 625 609 593 584 i dd2 one rdram in read b , balance in standby mode 800 2860 2340 1820 1300 1040 ma 711 2667 2187 1707 1227 987 600 2406 1996 1526 1086 866 i dd3 one rdram in read b , balance in active mode 800 3100 2460 1820 1180 860 ma 711 2900 2300 1700 1100 800 600 2350 1870 1390 910 670 i dd4 one rdram in write b , balance in nap mode 800 956 940 924 908 899 ma 711 851 835 819 803 792 600 746 730 714 698 689 i dd5 one rdram in write b , balance in standby mode 800 2868 2303 1738 1174 892 ma 711 2800 2240 1680 1120 840 600 2262 1818 1375 932 711 i dd6 one rdram in write b , balance in active mode 800 3055 2535 2015 1495 1235 ma 711 2800 2320 1840 1360 1120 600 2544 2104 1664 1224 1004
rev. 0.95 / july.01 9 rimm module with 256/288mb rdrams preliminary tm adjusted d t pd specification parameter and conditions symbol unit propagation delay variation of rsl signals with respect to t pd for 4,6 and 8 device modules ns propagation delay variation of rsl signals with respect to t pd for 12 device modules d t pd ps absolute min/max 40 -30 -40 adjusted min/max +/-[17+(18* n* d z0)] a +/-[20+(18* n* d z0)] a 30 propagation delay variation of rsl signals with respect to t pd for 16 device modules ps 50 -50 +/-[24+(18* n* d z0)] a a. where : n =number of rdram devices installed on the rimm module d z0 = delta z0% = (max z0 - min z0)/(min z0) (max z0 and min z0 are obtained from the loaded (high impedance) impedance coupons of all rsl layers on the modules) ac electrical specifications parameter and condition symbol unit module impedance of rsl signals z l w average clock delay form finger to finger of all rsl clock nets (ctmn, cfm, and cfmn) t pd ns propagation delay variation of rsl signals with respect to t pd a ,b for 4, 6, 8, and 12 device modules d t pd ps max 30.8 21 typ 28 min 25.2 - -21 see table a propagation delay variation of sck signal with respect to an average clock delay a d t pd-cmos ps 250 -250 attenuation limit v /v in % see table a forward crosstalk coefficient (300ps input rise time 20%-80%) v xf /v in % see table a backward crosstalk coefficient (300ps input rise time 20%-80%) v xb /v in % see table a propagation delay variation of rsl signals with respect to t pd a ,b for 16 device modules ps 24 -24 module impedance of sck and cmd signals z ul-cmos w 32.2 28 23.8 propagation delay variation of cmd signal with respect to sck signal d t pd-sck ,cmd ps 200 -200 a. tpd or average clock delay is defined as the average delay from finger of all rsl clock nets(ctm, ctmn, cfm, and cfmn) b. if the rimm module meets the following specification, then it is compliant to the specification. if the rimm module does not meet these specifications, then the specification can be adjusted by the ? adjusted d t pd specification ? table a
rev. 0.95 / july.01 10 rimm module with 256/288mb rdrams preliminary tm ac electrical specifications for rimm modules symbol rimm module capacity: no. of 256/288mb rdrams: 512/576mb 16 384/432mb 12 256/288mb 8 128/144mb 4 64/72mb 2 unit parameter and condition for -800, -711 & -600 rimm module max max max max max t pd propagation delay, all rsl signals 2.11 1.76 1.56 1.28 1.28 ns v a / v in attenuation limit -800, -711 25.0 20.0 16.0 12.0 12.0 % attenuation limit -600 18.5 15.5 12.5 10.5 10.5 % v xf / v in forward crosstalk coefficient (300ps input rise time @ 20%-80%) -800, -711, -600 8.0 6.0 4.0 2.0 2.0 % v xb / v in backward crosstalk coefficient (300ps input rise time @ 20%-80%) -800, -711, -600 2.5 2.3 2.0 1.5 1.5 % r dc dc resistance limit -800, -711, -600 1.2 1.1 0.8 0.6 0.6 w
rev. 0.95 / july.01 11 rimm module with 256/288mb rdrams preliminary tm the following defines the rimm module dimensions. all units are in millimeters. the height of the module is 31.75mm. physical dimensions note 1.tolerances on all dimensions 0.127mm unless otherwise specified. 2.thickness(* mark) includes plating and/or metallization. 133.35 0.15 3.0 4.0 0.15 r 2.0 17.78 5.675 45.0 55.175 0.08 27.5 4.5 11.5 34.925 0.127 1.27 0.1 a1 a92 detail a detail b 3.0 0.1 r 1.0 2.0 0.1 1.0 0.8 0.1 2.99 0.05 0.15 0.1 detail a detail b b1 b92 top area - n components figure 3: rimm module pcb physical description max. 7.37 including heat spreader the maximum rimm module weight is 75gm(2.625oz) with a center of mass 35mm (1.378 in.) upwards from bottom edge. module weight
rev. 0.95 / july.01 12 rimm module with 256/288mb rdrams preliminary tm the rimm modules available from rimm module manufacturers will be marked per figure 4 below. this industry standard marking will help oems and users identify the rambus rimm modules for use in specific system application. this marking also assists oems or users to specify and verify if the correct rimm standard rimm module marking label field description marked text unit a module memory capacity number of 8 - bit or 9 - bit mbytes of rdram storage in rimm module 512 mb, 384mb 256mb,128mb,64mb mbytes b number of drdrams number of rdram devices contained in the rimm module /16, /12, /8, /4, /2 rdram devices c ecc support indicates whether the rimm module supports 8 - bit (no ecc) or 9 - bit (ecc) bytes blank = 8 - bit byte ecc = 9 - bit byte d memory speed data transfer speed for rdram rimm module 800, 711, 600 mhz e t rac row access time (optional field) - 40, - 45, - 50, - 53 or blank ns f gerber version pcb gerber file revision used on rimm module (optional field) rev 1.00 = g100 or blank g spd version spd code version (optional field) rev 1.00 = s100 or blank h country country area korea i vendor hynix specific rimm module information product part no j vendor hynix specific date code, ass ? y vender ywwdv figure 4: standard rimm module marking d e h j g a b c f i hymr212818h - 840 g100 korea ywwdv s100 512 mb / 8 rambus 800 - 45
hymr2xxx16(18)h rambus module serial presence detect rev. 1.1/july 01 1 spd specification based on 256/288mb rdram version 1.1 july 2001
hymr2xxx16(18)h rambus module serial presence detect rev. 1.1/july 01 2 revision history revision 1.1 (july 2001) ? added 2d product. - added 2d items at byte75, 76, 77 regarding part number - added 2d items at byte99, 101, 102 regarding device number - added 2d checksum data.
hymr2xxx16(18)h rambus module serial presence detect rev. 1.1/july 01 3 serial presence detect byte number function description function hex value note -840 -845 -745 -653 -840 -845 -745 -653 byte0 spd revision level spd revision 1.0 02h byte1 total # of bytes in the spd 256bytes 08h byte2 device type direct rdram 01h byte3 module type rimm 01h byte4 row address bits[0:3], column address bits[0:3] 9bits, 7bits 97h byte5 bank address bits and type 32banks (5bank bits) c5h byte6 refresh bank bits 32 refresh bank sets 05h byte7 refresh reriod (tref) 32ms 20h byte8 protocol version protocol version 1 02h byte9 miscellaneous device configuration field dqs=1.5, no-lp, s28, s3 05h byte10 minimum precharge to ras time(trp-r,min) 8cycles 08h byte11 minimum ras to precharge time(tras-r,min) 20cycles 14h byte12 minimum ras to cas time(trcd-r,min) 8cycles 10cycles 8cycles 8cycles 08h 0ah 08h 08h byte13 minimum ras to ras time(trr-r,min) 8cycles 08h byte14 minimum precharge to precharge time(tpp-r,min) 8cycles 08h byte15 min tcycle for rangea 2.50ns 2.80ns 3.33ns 13h 15h 1ah byte16 max tcycle for rangea 3.83ns 1eh byte17 tcdly range for rangea 5tcycle ~ 9tcycle 59h byte18 tcls and tcas range for rangea 2tcycle for tcls & tcas aah byte19 min tcycle for rangeb reserved 00h byte20 max tcycle for range b reserved 00h byte21 tcdly range for rangeb reserved 00h byte22 tcls and tcas range for rangeb reserved 00h byte23 min tcycle for rangec reserved 00h byte24 max tcycle for range c reserved 00h byte25 tcdly range for rangec reserved 00h byte26 tcls and tcas range for rangec reserved 00h byte27 min tcycle for ranged reserved 00h byte28 max tcycle for range d reserved 00h byte29 tcdly range for ranged reserved 00h byte30 tcls and tcas range for ranged reserved 00h byte31 power down exit max. time, phasea(tpd- nxa,max) 4us 04h byte32 power down exit max. time, phaseb(tpd- nxb,max) 9000tcycle 8dh byte33 nap exit max.time, phasea(tnapxa,max) 50ns 32h byte34 nap exit max.time, phaseb(tnapxb,max) 40ns 28h byte35 fimin[11:8], fimax[11:8] 261mhz, 400mhz 261mhz, 357mhz 261mhz, 300mhz 11h byte36 fimin[7:0] 261mhz 05h byte37 fimax[7:0] 400mhz 357mhz 300mhz 90h 65h 2ch byte38 odf mapping reserved 00h byte39 max time between current control(tcctrl,max) 100ms 64h byte40 max time between temp. calibration(ttemp,max) 100ms 64h byte41 max time between temp. calibration enable and command (ttcen,min) 150tcycle 96h byte42 maximum ras to precharge time(tras-r,max) 64us 40h byte43 maximum time that a device can stay in nap mode (tnlimit,max) 10us 0ah
hymr2xxx16(18)h rambus module serial presence detect rev. 1.1/july 01 4 byte number function description opti on function hex value note -840 -845 -745 -653 -840 -845 -745 -653 byte44 actrefpt[3:0], pchrefpt[3:0] 6tcycle, 6tcycle 66h byte45 cpchrefpt_dc[3:0], rdrefpt_dc[3:0] 5tcycle, 5tcycle 55h byte46 retrefpt_dc[3:0], wrrefpt_dc[3:0] 5tcycle, 13tcycle 5dh byte47~ 49 reserved - 00h byte50 fras[11:8] 400mhz 357mhz 300mhz 01h byte51 fras[7:0] 90h 65h 2ch byte52 pmax,hi,pmax,lo,tj 0,0,100 ? 24 h byte5 3 heatspreader, thermal sensor, tplate 1,0,100 ? a4h byte54 pstby,hi 130ma 120ma 110ma 82h 78h 6eh byte55 pacti,hi 200ma 190ma 180ma 64h 5fh 5ah byte56 pactrw,hi 750ma 700ma 650ma 5eh 58h 4bh byte57 pstby,lo tbd tbd tbd 00h 00h 00h byte58 pacti,lo tbd tbd tbd 00h 00h 00h byte59 pactrw,hi tbd tbd tbd 00h 00h 00h byte60 pnap 4.2ma 21h byte61 presa(reserved for a future thermal parameter) reserved 00h byte62 presb(reserved for a future thermal parameter) reserved 00h byte63 checksum for bytes 0 ~ 62 - 0bh 0dh a2h 19h byte64 module manufacturer id code hynix adh byte65~ 71 ..... module manufacturer id code hynix 00h byte72 module manufacturing location hynix (korea area) hsa (united states area) hse (europe area) hsj (japan area) asia area 0*h 1*h 2*h 3*h 4*h 1 byte73 module part number (component) r (rambus) 52h 2,3 byte74 module part number (256/288mb based) 2 32h 2,3 byte75 module part number (memory width) 2d blank 20h 2,3 4d blank 20h 8d 1 31h 12d 1 31h 16d 2 32h byte76 ... module part number (memory width) 2d 3 33h 2,3 4d 6 36h 8d 2 32h 12d 9 39h 16d 5 35h byte77 ..... module part number (memory width) 2d 3 32h 2,3 4d 4 34h 8d 8 38h 12d 2 32h 16d 6 36h continued
hymr2xxx16(18)h rambus module serial presence detect rev. 1.1/july 01 5 byte number function description opti on function hex value note -840 -845 -745 -653 -840 -845 -745 -653 byte78 module part number (data width) 16bits 1 31h 2,3 18bits 1 31h byte79 ..... module part number (data width) 16bits 6 36h 2,3 18bits 8 38h byte80 module part number (manufacturing site) h 48h 2,3 byte81 module part number (hyphent) -(hyphen) 2dh 2,3 byte82 module part number (trac & speed) 8 8 7 6 38h 38h 37h 36h 2,3 byte83 module part number (trac & speed) 4 4 4 5 34h 34h 34h 35h 2,3 byte84 module part number (trac & speed) 0 5 5 3 30h 35h 35h 33h 2,3 byte85 ~90 module part number blank 20h 2,3 byte91~ 92 module revision code - - byte93 module manufacturing year - - byte94 module manufacturing week - - byte95 ~98 module serial number - - byte99 number of devices on module 2d 2 02h 4d 4 04h 8d 8 08h 12d 12 0ch 16d 16 10h byte100 module data width 16bits 16 10h 18bits 18 12h byte101 device enalbes 2d all 2devices 03h 4d all 4devices 0fh 8d all 8devices ffh 12d all 12devices ffh 16d all 16devices ffh byte102 ..... device enalbes 2d all 2devices 00h 4d all 4devices 00h 8d all 8devices 00h 12d all 12devices 0fh 16d all 16devices ffh byte103 ~104 ..... device enalbes - 00h byte105 module vdd, module voltage interface level 2.5vdd,1.8vterm 10h byte106 module vdd tolerance 5% dc, 2% ac 52h byte107 ~113 reserved - 00h byte114 cdly0/1 for tcdly=3 - 00h byte115 cdly0/1 for tcdly=4 2/0 20h byte116 cdly0/1 for tcdly=5 3/0 30h byte117 cdly0/1 for tcdly=6 3/1 31h byte118 cdly0/1 for tcdly=7 3/2 32h byte119 cdly0/1 for tcdly=8 4/2 42h continued
hymr2xxx16(18)h rambus module serial presence detect rev. 1.1/july 01 6 byte number function description option function hex value note -840 -845 -745 -653 -840 -845 -745 -653 byte120 cdly0/1 for tcdly=9 5/2 52h byte121 cdly0/1 for tcdly=10 - 00h byte122 cdly0/1 for tcdly=11 - 00h byte123 cdly0/1 for tcdly=12 - 00h byte124 cdly0/1 for tcdly=13 - 00h byte125 cdly0/1 for tcdly=14 - 00h byte126 cdly0/1 for tcdly=15 - 00h byte127 checksum for bytes 99 - 126 16bit s 2d 2 beh 4d 4 cch 8d 8 c0h 12d 12 d3h 16d 16 c7h 18bit s 2d 2 c0h 4d 4 ceh 8d 8 c2h 12d 12 d5h 16d 16 c9h byte128 + open for customer use - undefined continued note : 1. refer to hynix web site. 2. ascii adopted 3. basically hynix writes part no. except for ?hym? in byte 73~90 to use the limited 18 bytes from byte 73 to byte 90

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