1 power transistors 2SB1498 silicon pnp triple diffusion planar type for power switching n features l high-speed switching l high collector to base voltage v cbo l i type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings C600 C600 C7 C 0.6 C 0.3 15 1.3 150 C55 to +150 unit v v v a a w ?c ?c n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency turn-on time storage time fall time symbol i cbo i ebo v ceo h fe1 h fe2 v ce(sat) v be(sat) f t t on t stg t f conditions v cb = C600v, i e = 0 v eb = C7v, i c = 0 i c = C10ma, i b = 0 v ce = C5v, i c = C50ma v ce = C5v, i c = C150ma i c = C150ma, i b = C30ma i c = C150ma, i b = C30ma v ce = C10v, i c = C50ma, f = 1mhz i c = C150ma, i b1 = C30ma, i b2 = 60ma, v cc = C200v min C600 30 8 typ 10 max C100 C100 C1.0 C1.5 1.0 3.5 0.5 unit m a m a v v v mhz m s m s m s t c =25 c ta=25 c unit: mm 1:base 2:collector 3:emitter i type package unit: mm 1:base 2:collector 3:emitter i type package (y) 7.2 0.3 7.0 0.3 3.0 0.2 3.5 0.2 10.0 +0.3 ?. 0.8 0.2 1.0 0.2 4.6 0.4 2 13 1.1 0.1 0.75 0.1 2.3 0.2 0.85 0.1 0.4 0.1 7.0 0.3 0.75 0.1 2.3 0.2 4.6 0.4 1.1 0.1 10.2 0.3 7.2 0.3 2.0 0.2 0.9 0.1 3.5 0.2 2.5 0.2 1.0 1.0 2.5 0.2 3.0 0.2 1.0 max. 123 0 to 0.15 0 to 0.15 2.5 0.5 max.
2 power transistors 2SB1498 p c ta i c v ce v ce(sat) i c v be(sat) i c h fe i c f t i c c ob v cb t on , t stg , t f i c area of safe operation (aso) 0 160 40 120 80 140 20 100 60 0 20 15 5 10 (1) t c =ta (2) without heat sink (p c =1.3w) (1) (2) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 0 ?2 ?0 ? ? ? ? 0 ?.2 ?.0 ?0.8 ? 0.6 ?0.4 ?0.2 t c =25?c ?00ma ?0ma ?0ma ?0ma ?0ma ?0ma i b =?80ma collector to emitter voltage v ce ( v ) collector current i c ( a ) ?0.01 ?0.1 1 ?0 ?0.03 ?0.3 3 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 i c /i b =5 25?c 100?c t c =?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) ?0.01 ?0.1 1 ?0 ?0.03 ?0.3 3 ?0.1 ?00 ?0 ? ?0.3 ? ?0 i c /i b =5 t c =?5?c 25?c 100?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) ?0.01 ?0.1 ? ?0 ?0.03 ?0.3 ? 1 1000 100 10 3 30 300 v ce =?v t c =100?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe ?0.001 ?0.01 ?0.1 1 ?0.003 ?0.03 ?0.3 0.1 100 10 1 0.3 3 30 v ce =?0v f=1mhz t c =25?c collector current i c ( a ) transition frequency f t ( mhz ) ? ? ?0 ?0 ?00 1 1000 100 10 3 30 300 i e =0 f=1mhz t c =25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 0 0.4 ?0.1 ?0.3 ?0.2 0.01 0.03 0.1 0.3 1 3 10 30 100 t stg t on t f pulsed t w =1ms duty cycle=1% i c /i b =5 (? b1 =i b2 ) v cc =?50v t c =25?c collector current i c ( a ) switching time t on ,t stg ,t f ( m s ) ? ?0 ?00 ?000 ? ?0 ?00 ?0.001 ?0.003 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 non repetitive pulse t c =25?c i cp i c 10ms 300ms t=1ms collector to emitter voltage v ce ( v ) collector current i c ( a )
3 power transistors 2SB1498 r th(t) t 10 ? 10 2 10 ? 1 10 ? 10 10 3 10 4 0.1 0.3 1 3 10 30 100 300 1000 note: r th was measured at ta=25?c and under natural convection. (1) without heat sink (2) with a 50 50 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ?c/w )
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