05/27/02 GA200TD120U "half-bridge" igbt dual int-a-pak features features features features features v ces = 1200 v v ce (on) typ. = 2.3v @v ge = 15v , i c = 200a parameter typ. max. units r jc thermal resistance, junction-to-case - igbt ? 0.12 r jc thermal resistance, junction-to-case - diode ? 0.20 c/w r cs thermal resistance, case-to-sink - module 0.1 ? mounting torque, case-to-heatsink ? 6.0 n m mounting torque, case-to-terminal 1, 2 & 3 ? 5.0 weight of module 400 ? g thermal / mechanical characteristics ultra-fast tm speed igbt absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current 200 i cm pulsed collector current 400 a i lm peak switching current? 400 i fm peak diode forward current 400 v ge gate-to-emitter voltage 20 v v isol rms isolation voltage, any terminal to case, t = 1 min 2500 p d @ t c = 25c maximum power dissipation 1040 w p d @ t c = 85c maximum power dissipation 540 t j operating junction temperature range -40 to +150 c t stg storage temperature range -40 to +125 ultrafast: optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode very low conduction and switching losses hexfred ? antiparallel diodes with ultra- soft recovery industry standard package ul approved benefits increased operating efficiency direct mounting to heatsink performance optimized for power conversion: ups, smps, welding lower emi, requires less snubbing generation 4 igbt technology . www.irf.com 1 pd - 50061d
GA200TD120U 2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 1660 2490 v cc = 400v v ge = 15v qge gate - emitter charge (turn-on) ? 280 420 nc i c = 249a q gc gate - collector charge (turn-on) ? 550 825 t j = 25c t d(on) turn-on delay time ? 636 ? r g1 = 15 ? , r g2 = 0 ? , t r rise time ? 201 ? ns i c = 200a t d(off) turn-off delay time ? 650 ? v cc = 720v t f fall time ? 341 ? v ge = 15v e on turn-on switching energy ? 44 ? mj e off (1) turn-off switching energy ? 44 ? e ts (1) total switching energy ? 88 130 c ies input capacitance ? 37343 ? v ge = 0v c oes output capacitance ? 1660 ? pf v cc = 30v c res reverse transfer capacitance ? 322 ? ? = 1 mhz t rr diode reverse recovery time ? 196 ? ns i c = 200a i rr diode peak reversecurrent ? 131 ? a r g1 = 15 ? q rr diode recovery charge ? 12833 ? nc r g2 = 0 ? di (rec) m /dt diode peak rate of fall of recovery ? 1740 ? a/s v cc = 720v during t b di/dt?1294a/s parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 ? ? v ge = 0v, i c = 1ma v ce(on) collector-to-emitter voltage ? 2.3 3.1 v ge = 15v, i c = 200a ? 2.1 ? v v ge = 15v, i c = 200a, t j = 125c v ge(th) gate threshold voltage 3.0 ? 6.0 i c = 2.5ma dv ge(th) /dt j temperature coeff. of threshold voltage ? -11 ? mv/c v ce = v ge , i c = 2.5ma g fe forward transconductance ? 261 ? s v ce = 25v, i c = 200a i ces collector-to-emitter leaking current ? ? 2.0 ma v ge = 0v, v ce = 1200v ??20 v ge = 0v, v ce = 1200v, t j = 125c v fm diode forward voltage - maximum ? 3.2 4.1 v i f = 200a, v ge = 0v ? 3.1 ? i f = 200a, v ge = 0v, t j = 125c i ges gate-to-emitter leakage current ? ? 500 na v ge = 20v dynamic characteristics - t j = 125c (unless otherwise specified) electrical characteristics @ t j = 25c (unless otherwise specified)
GA200TD120U www.irf.com 3 0.1 1 10 100 0 20 40 60 80 100 120 f, frequency (khz) load current (a) fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j power dissipation = w 60% of rated voltage i ideal diodes square wave: 160 10 100 1000 1.0 1.5 2.0 2.5 3.0 v , collector-to-emitter voltage (v) i , collector current (a) ce c v = 15v 80 s pulse width ge t = 25 c j t = 125 c j 1 10 100 1000 5.0 6.0 7.0 8.0 9.0 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 25v 80 s pulse width ce t = 25 c j t = 125 c j
GA200TD120U 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature 25 50 75 100 125 150 0 50 100 150 200 250 t , case temperature ( c) maximum dc collector current(a) c -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 400 c i = a 200 c i = a 100 c 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 1 th jc d = 0.50 0.01 0.02 0.05 0.10 0.20 sin gle p ulse (thermal response) therm al response (z ) t , rectan g ular pulse duration (sec) a p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c
GA200TD120U www.irf.com 5 fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 0 10 20 30 40 50 80 90 100 110 120 130 140 r , gate resistance (ohm) total switching losses (mj) g v = 720v v = 15v t = 125 c i = 200a cc ge j c ( ? ) 0 400 800 1200 1600 2000 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 200a cc c 1 10 100 0 10000 20000 30000 40000 50000 60000 70000 v , collector-to-emitter volta g e (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies g e g c , ce res g c oes ce g c c res c oes c ies 249a -60 -40 -20 0 20 40 60 80 100 120 140 160 10 100 1000 t , junction temperature ( c ) total switching losses (mj) j r = ohm v = 15v v = 720v g ge cc i = a 400 c i = a 200 c i = a 100 c r g1 =15 ? ;r g2 = 0 ?
GA200TD120U 6 www.irf.com fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - reverse bias soa fig. 13 - typical forward voltage drop vs. instantaneous forward current fig. 14 - typical stored charge vs. di f /dt instantaneous forward current - i f ( a ) q rr - ( nc) 0 100 200 300 400 0 40 80 120 160 200 i , collector current (a) total switching losses (mj) c r = ohm t = 150 c v = 720v v = 15v g j cc ge r g1 =15 ? ;r g2 = 0 ? 10 100 1000 1.0 2.0 3.0 4.0 5.0 fm t = 125c t = 25c j j forward voltage drop - v (v) 0 4000 8000 12000 16000 20000 500 1000 1500 2000 f di /dt - ( a/ s ) i = 400a i = 200a i = 100a f f f r j j v = 720v t = 125c t = 25c 0 100 200 300 400 500 0 200 400 600 800 1000 1200 1400 ce safe operating area v , collector-to-emitter volta g e ( v ) a v = 20v t = 125c v measured at terminal ( peak volta g e ) ge j ce i c , collector current ( a)
GA200TD120U www.irf.com 7 fig. 15 - typical reverse recovery vs. di f /dt fig. 16 - typical recovery current vs. di f /dt trr - ( ns ) i rrm - ( a ) 0 100 200 300 400 500 1000 1500 2000 f di /dt - ( a/ s ) i = 400a i = 200a i = 100a f f f r j j v = 720v t = 125c t = 25c 0 50 100 150 200 250 500 1000 1500 2000 f di /dt - ( a/ s ) i = 400a i = 200a i = 100a f f f r j j v = 720v t = 125c t = 25c
GA200TD120U 8 www.irf.com t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+ 5 s vce ic dt 90% vge +vge eoff = fig. 17b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery w aveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt fig. 17a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 17c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 17d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr vc ic dt vce ic dt ic dt vce ic dt
GA200TD120U www.irf.com 9 vg gate signal device under test current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 18. clamped inductive load test circuit figure 19. pulsed collector current test circuit r l = 600v 4 x i c @25c 0 - 600v figure 17e. macro waveforms for figure 18a's test circuit
GA200TD120U 10 www.irf.com notes: repetitive rating; v ge = 20v, pulse width limited by max. junction temperature. see fig. 17 for screws m6. pulse width 50s; single shot. case outline ? dual int-a-pak data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 05/02 104.50 103.50 [ 4.114 4.075 ] 5.50 4.50 [ .217 .177 ] 1 23 8 9 10 11 4 5 6 7 8.00 6.60 [ .315 .260 ] 24.00 23.00 [ .945 .906 ] 28.60 27.40 [ 1.126 1.079 ] 2x 93.30 92.70 [ 3.673 3.650 ] 107.30 106.30 [ 4.224 4.185 ] 15.59 14.39 [ .614 .567 ] 6.60 5.40 [ .260 .213 ] 4x 2x 48.50 47.50 [ 1.909 1.870 ] 48.30 47.70 [ 1.902 1.878 ] 3x m6 8 [.314] max. 4x ? 6.80 6.20 [ .267 .244 ] 0.15 [.0059] convex 59.50 58.50 [ 2.343 2.303 ] 62.70 61.70 [ 2.468 2.429 ] 31.00 29.60 [ 1.220 1.165 ] 2. cont rol ling dimens ion: mill ime t e r. 1. all dimens ions are s hown in mil limet e rs [inches ]. not e s : 4x fas t on tab (110) 2.8 x 0.5 [.110 x .020]
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