specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 1 of 4 june 2011 WJA1001 +5v active-bias ingap hbt gain block product features ? 50 C 3000 mhz ? 19 db gain @ 900mhz ? +20 dbm p1db @ 900mhz ? +45 dbm oip3 @ 900mhz ? +5v single supply ? low current draw (100 ma) ? unconditionally stable ? internally matched to 50 ? robust 1000v esd, class 1c ? leadfree/green/rohscompliant sot89 package applications ? gsm, pcs, cdma, wcdma ? wimax, wibro ? repeaters, bts transceivers ? rfid product description the WJA1001 is a cascadable gain block that offers high linearity in a lowcost surfacemount package. at 900 mhz, the WJA1001 typically provides 19 db gain, +45 dbm oip3, and +20 dbm p1db. the device is housed in a lead free/green/rohscompliant sot89 smt package using a nipdau plating to eliminate the possibility of tin whiskering. the WJA1001 consists of a darlingtonpair amplifier using a high reliability ingap/gaas hbt process technolog y. the amplifier has been optimized internally to offe r very high linearity performance at 1 ghz while drawing v ery low current. the mmic amplifier is internally matc hed to 50? and only requires dcblocking capacitors and a bias inductor for operation. an internal active bias is designed to enable stable performance over temperature and a llow for operation directly from a +5v supply voltage. the broadband amplifier can be directly applied to various current and next generation wireless technologies s uch as gsm, cdma, wcdma, wibro, and wimax. the WJA1001 is ideal for general purpose applications s uch as lo buffering or amplification and predriver stages within the 50 to 3000 mhz frequency range. functional diagram rf in gnd rf out gnd 1 2 3 4 function pin no. input 1 output/bias 3 ground 2, 4 specifications (1) parameter units min typ max operational bandwidth mhz 50 3000 test frequency mhz 900 gain db 17.5 19 20.5 input return loss db 12 output return loss db 14 output p1db dbm +19.7 output ip3 (2) dbm +39 +44.5 noise figure db 5.4 device voltage v 5.0 device current ma 88 100 108 1. test conditions: 25 oc, supply voltage = +5 v, 50 system. sparameters and 3oip measured at device pins. all other specifications measured on e valuation board. 2. 3oip measured with two tones at an output power of +8 dbm/tone separated by 1 mhz. the suppression on the largest im3 product is used to c alculate the 3oip using a 2:1 rule. absolute maximum rating parameter rating storage temperature 55 to +150 c supply voltage +6.5 v input power +24 dbm jc (junction to paddle) 80.6 c / w maximum junction temperature 150 c operation of this device above any of these paramet ers may cause permanent damage. typical performance (3) parameter units typical frequency mhz 200 500 900 1900 2100 s21 db 19.6 19.2 18.5 16.7 16.4 s11 db 13 15 18 30 26 s22 db 22 20 15 11 12 output p1db dbm +20.4 +20.3 +19.7 +19.2 +18.1 output ip3 (2) dbm +39.7 +39 +44 +34 +34 noise figure db 4.8 5.0 5.4 6.1 6.4 3. listed typical performance parameters meas ured on evaluation board. ordering information part no. description WJA1001 +5v active bias ingap hbt gain block (leadfree/green/rohscompliant sot89 package) standard tape / reel size = 1000 pieces on a 7 reel not recommended for new designs recommended replacement parts: tqp3m9009 www.datasheet.net/ datasheet pdf - http://www..co.kr/
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 2 of 4 june 2011 WJA1001 +5v active-bias ingap hbt gain block typical evaluation board rf performance supply bias = +5v, i cc = 100 ma gain vs. frequency 0 5 10 15 20 25 0 1000 2000 3000 frequency (mhz) gain (db) -40c +25c +85c return loss vs. frequency -35 -30 -25 -20 -15 -10 -5 0 0 1000 2000 3000 frequency (mhz) s11, s22 (db) s11 s22 nf vs. frequency 0 2 4 6 8 10 0 1000 2000 3000 frequency (mhz) nf (db) -40c +25c +85c oip3 vs. output power frequency = 900mhz, t = 25c 25 30 35 40 45 0 2 4 6 8 10 12 output power per tone (dbm) oip3 (dbm) oip3 vs. frequency pout = 8dbm/tone 25 30 35 40 45 0 1000 2000 3000 frequency (mhz) oip3 (dbm) -40c +25c +85c oip3 vs. vcc frequency = 900mhz, t = 25c 25 30 35 40 45 4.7 4.8 4.9 5 5.1 5.2 supply voltage (v) oip3 (dbm) p1db vs. frequency 12 14 16 18 20 22 0 1000 2000 3000 frequency (mhz) p1db (dbm) -40c +25c +85c p1db vs. vcc frequency = 900mhz, t = 25c 12 14 16 18 20 22 4.7 4.8 4.9 5 5.1 5.2 supply voltage (v) p1db (dbm) icc vs. vcc frequency = 900mhz, t = 25c 60 70 80 90 100 110 120 4.7 4.8 4.9 5 5.1 5.2 supply voltage (v) icc (ma) www.datasheet.net/ datasheet pdf - http://www..co.kr/
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 3 of 4 june 2011 WJA1001 +5v active-bias ingap hbt gain block application circuit recommended component values (1) ref. name value / type size l1 470 nh ferrite core wire wound inductor (2) 0805 c1, c2 1000 pf npo chip capacitor 0603 c3 0.018 f chip capacitor 0603 r1, r2, r4 0 (3) 0603 c4, r3, r5 do not place (3) 1. the listed values are contained on the evaluation b oard to achieve optimal broadband performance 2. for lower cost and performance (500 C 2000 mhz) opt ion use 39 nh ceramic core wire wound inductor. 3. place holders for the 0 resistors and do not place references are not ne eded for final design. typical device data sparameters (v device = +5 v, i cc = 100 ma, t = 25 c, calibrated to device leads) freq (ghz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 10 16.19 74.53 22.52 170.02 25.75 12.97 11.35 37.50 50 13.73 150.31 20.24 167.55 23.34 6.00 17.22 110.83 100 13.40 165.59 19.82 167.74 23.16 2.19 18.78 136.33 200 13.27 173.49 19.60 162.77 23.09 1.09 19.05 148.58 400 12.67 178.71 19.50 149.81 23.01 4.76 18.29 151.10 600 12.13 177.74 19.35 136.50 22.97 8.79 17.08 151.78 800 11.99 172.41 19.15 122.68 22.90 12.46 15.70 150.91 1000 12.07 163.93 18.99 109.45 22.85 16.03 13.9 2 151.81 1200 12.02 152.87 18.73 94.83 22.84 19.42 12.73 157.08 1400 11.71 142.18 18.33 81.54 22.75 23.24 11.59 165.19 1600 11.76 132.89 18.10 67.63 22.81 27.41 10.74 173.87 1800 12.61 125.70 17.71 53.78 22.66 30.65 9.99 179.93 2000 14.95 116.23 17.35 40.27 22.75 35.01 9.15 175.81 2200 18.89 100.16 16.88 26.53 22.71 38.53 8.48 171.38 2400 24.73 70.36 16.27 12.71 22.78 41.54 8.13 1 65.83 2600 32.51 32.55 15.76 1.15 22.67 45.93 8.09 1 57.59 2800 28.92 123.80 15.14 14.50 22.65 49.54 8.0 9 148.86 3000 18.69 139.28 14.31 28.11 22.55 53.67 7.8 4 140.92 3200 13.74 143.12 13.44 41.58 22.62 57.98 7.4 3 135.57 3400 10.86 145.10 12.37 53.94 22.64 61.93 7.0 2 130.30 3600 9.38 150.89 11.40 65.62 22.59 65.84 6.80 126.09 3800 8.61 162.51 10.54 76.54 22.46 69.00 6.67 121.50 4000 7.74 178.88 9.54 88.57 22.15 73.94 6.65 116.69 device sparameters are available for download from the website at: http://www.triquint.com c1 blocking capacitor rf out l1 rf choke c3 bypass capacitor r4 0 rf in c2 blocking capacitor vcc =+5.00v icc = 100 ma WJA1001 r1 0 r2 0 www.datasheet.net/ datasheet pdf - http://www..co.kr/
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 4 of 4 june 2011 WJA1001 +5v active-bias ingap hbt gain block mechanical information this package is leadfree/green/rohscompliant. it is compatible with both leadfree (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. the pla ting material on the leads is nipdau. outline drawing land pattern product marking the WJA1001 will be marked with an a1001 designator with an alphanumeric lot code marked below the part designator. tape and reel specifications for this part are located on the website in the application notes section. msl / esd rating esd rating: class 1c value: passes 1000v min. test: human body model (hbm) standard: jedec standard jesd22a114 esd rating: class iv value: passes 1000v min. test: charged device model (cdm) standard: jedec standard jesd22c101 msl rating: level 3 at +260 c convection reflow standard: jedec standard jstd020 mounting config. notes 1. ground / thermal vias are critical for the prope r performance of this device. vias should use a .35m m (#80 / .0135) diameter drill and have a final plat ed thru diameter of .25 mm (.010). 2. add as much copper as possible to inner and oute r layers near the part to ensure optimal thermal performance . 3. mounting screws can be added near the part to fa sten the board to a heatsink. ensure that the ground / ther mal via region contacts the heatsink. 4. do not put solder mask on the backside of the p c board in the region where the board contacts the heatsink. 5. rf trace width depends upon the pc board materi al and construction. 6. use 1 oz. copper minimum. 7. all dimensions are in millimeters (inches). ang les are in degrees. a1001 www.datasheet.net/ datasheet pdf - http://www..co.kr/
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