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AO6602 30v complementary mosfet general description n-channel p-channel v ds = 30v -30v i d = 3.5a (v gs =10v) -2.7a (v gs =-10v) r ds(on) r ds(on) < 50m (v gs =10v) < 100m (v g s =-10v) < 70m (v gs =4.5v) < 170m (v g s =-4.5v) symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 64 80 106 150 t a =25c parameter typ max 1.15 -55 to 150 maximum junction-to-ambient a thermal characteristics 20 t a =70c junction and storage temperature range power dissipation b p d pulsed drain current c continuous drain current c/w r q ja 78 -2.1 -15 units 110 w c a 0.73 3.5 3 0.73 20 -2.7 -30 1.15 the AO6602 uses advanced trench technology to provi de excellent r ds(on) and low gate charge. the complementary mosfets form a high-speed power inverter, suitable for a multitude of applications. v 20 drain-source voltage 30 v units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted max n-channel max p-channel gate-source voltage i d g2 d2 s2 g1 d1 s1 n-channel p-channel top view s2 s1 g2 g1 d2 d1 1 2 3 6 5 4 features www.freescale.net.cn 1 / 9
symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.5 2 2.5 v i d(on) 20 a 40 50 t j =125c 61 77 52 70 m w g fs 12 s v sd 0.79 1 v i s 1.5 a c iss 170 210 pf c oss 35 pf c rss 23 pf r g 1.7 3.5 5.3 w q g (10v) 4.05 5 nc q g (4.5v) 2 3 nc q gs 0.55 nc q gd 1 nc t d(on) 4.5 ns t r 1.5 ns t d(off) 18.5 ns t f 15.5 ns t rr 7.5 10 ns q rr 2.5 nc body diode reverse recovery charge i f =3.5a, di/dt=100a/ m s turn-off fall time turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =4.2 w , r gen =3 w v gs =0v, v ds =15v, f=1mhz switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz reverse transfer capacitance dynamic parameters total gate charge v gs =10v, v ds =15v, i d =3.5a gate source charge gate drain charge total gate charge i f =3.5a, di/dt=100a/ m s gate-body leakage current m w i s =1a,v gs =0v v ds =5v, i d =3.5a v gs =4.5v, i d =2a forward transconductance diode forward voltage v ds =0v, v gs = 20v v ds =v gs i d =250 m a i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =3.5a body diode reverse recovery time drain-source breakdown voltage on state drain current i dss r ds(on) static drain-source on-resistance maximum body-diode continuous current input capacitance output capacitance turn-on delaytime zero gate voltage drain current n-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions m a a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user's spec ific board design. b. the power dissipation p d is based on t j(max) =150c, using www.freescale.net.cn 2 / 9 n-channel: typical electrical and thermal characteristics 17 5 2 10 0 18 40 0 2 4 6 8 10 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 30 40 50 60 70 0 2 4 6 8 10 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =4.5v i d =2a v gs =10v i d =3.5a 20 40 60 80 100 120 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w w w w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =3.5a 25c 125c 0 3 6 9 12 15 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =3v 3.5v 10v 4v 4.5v 7v AO6602 30v complementary mosfet www.freescale.net.cn 3 / 9 n-channel: typical electrical and thermal characteristics 0 2 4 6 8 10 0 1 2 3 4 5 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 50 100 150 200 250 300 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =15v i d =3.5a 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to-ambient (note f) power (w) t a =25c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q q q q ja normalized transient thermal resistance in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =150c/w t on t p d single pulse AO6602 30v complementary mosfet www.freescale.net.cn 4 / 9 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr www.freescale.net.cn 5 / 9 AO6602 30v complementary mosfet symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1.4 -1.9 -2.4 v i d(on) -15 a 82 100 t j =125c 115 140 130 170 m w g fs 5.5 s v sd -0.8 -1 v i s -1.5 a c iss 197 240 pf c oss 42 pf c rss 26 37 pf r g 3.5 7.2 11.0 w q g (10v) 4.3 5.2 nc q g (4.5v) 2.2 3 nc q gs 0.7 nc q gd 1.1 nc t d(on) 7.5 ns t r 4.1 ns t d(off) 11.8 ns t f 3.8 ns t rr 11.3 14 ns q rr 4.4 nc maximum body-diode continuous current input capacitance output capacitance switching parameters p-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions r ds(on) i dss m a m w v gs =-4.5v, i d =-2a gate resistance v ds =v gs i d =-250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current i s =-1a,v gs =0v v ds =-5v, i d =-2.7a v gs =0v, v ds =-15v, f=1mhz forward transconductance v gs =10v, v ds =-15v, i d =2.7a gate source charge body diode reverse recovery time drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-2.7a static drain-source on-resistance diode forward voltage turn-on delaytime dynamic parameters turn-on rise time v gs =10v, v ds =-15v, r l =5.55 w , r gen =3 w gate drain charge total gate charge reverse transfer capacitance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge body diode reverse recovery charge i f =-2.7a, di/dt=100a/ m s turn-off delaytime i f =-2.7a, di/dt=100a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user's spec ific board design. b. the power dissipation p d is based on t j(max) =150c, using www.freescale.net.cn 6 / 9 p-channel: typical electrical and thermal characteristics 17 5 2 10 0 18 40 0 2 4 6 8 10 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 -v gs (volts) figure 2: transfer characteristics (note e) -i d (a) 60 80 100 120 140 160 180 200 0 2 4 6 8 10 -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics (note e) -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =-4.5v i d =-2a v gs =-10v i d =-2.7a 60 100 140 180 220 260 300 2 4 6 8 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w w w w ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-2.7a 25c 125c 0 3 6 9 12 15 0 1 2 3 4 5 -v ds (volts) fig 1: on-region characteristics (note e) -i d (a) v gs =-3.5v -4v -10v -4.5v -5v -8v -6v AO6602 30v complementary mosfet www.freescale.net.cn 7 / 9 p-channel: typical electrical and thermal characteristics 0 2 4 6 8 10 0 1 2 3 4 5 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 50 100 150 200 250 300 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =-15v i d =-2.7a 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to-ambient (note f) power (w) t a =25c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q q q q ja normalized transient thermal resistance in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =150c/w t on t p d single pulse AO6602 30v complementary mosfet www.freescale.net.cn 8 / 9 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) AO6602 30v complementary mosfet www.freescale.net.cn 9 / 9 |
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